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http://dx.doi.org/10.6111/JKCGCT.2015.25.6.231

Analysis of thermal stress through finite element analysis during vertical Bridgman crystal growth of 2 inch sapphire  

Kim, Jae Hak (Department of Materials Science and Engineering, Pusan National University)
Lee, Wook Jin (Dongnam Regional Division, Korea Institute of Industrial Technology)
Park, Yong Ho (Department of Materials Science and Engineering, Pusan National University)
Lee, Young Cheol (Dongnam Regional Division, Korea Institute of Industrial Technology)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.25, no.6, 2015 , pp. 231-238 More about this Journal
Abstract
Sapphire single crystals have been highlighted for epitaxial of gallium nitride films in high-power laser and light emitting diode industries. Among the many crystal growth methods, vertical Bridgman process is an excellent commercial method for growing high quality sapphire crystals with c-axis. In this study, the thermally induced stress in Sapphire during the vertical Bridgman crystal growth process was investigated using a finite element model. A vertical Bridgman process of 2-inch Sapphire was considered for the model. The effects of vertical and transverse temperature gradients on the thermal stress during the process were discussed based on the finite element analysis results.
Keywords
Sapphire; Thermal stress; Vertical Bridgman; Crystal growth; FEM;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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