• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.469-472
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• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.8
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• pp.560-564
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• 2003

Thick oxide layer was fabricated by anodic reaction and complex oxidation performed by combining low temperature thermal oxidation (50$0^{\circ}C$, 1 hr at $H_2O$/O$_2$) and a RTO (rapid thermal oxidation) process (105$0^{\circ}C$, 1 min). Electrical characteristics of OPSL (oxidized porous silicon layer) were almost the same as those of thermal silicon dioxide prepared at high temperature. The leakage current through the OPSL of 20${\mu}{\textrm}{m}$ thickness was about 100 - 500 ㎀ in the range 0 V to 50 V. The average value of breakdown field was about 3.9 MV/cm. From the XPS analysis, surface and internal oxide films of OPSL prepared by complex process were confirmed completely oxidized and also the role of RTO process was important for the densification of PSL (porous silicon layer) oxidized at low temperature.

• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.366-373
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• 2015

Sol-gel binder was prepared by hydrolysis and condensation reaction using boehmite sol and methyltrimethoxysilane as a function of aging-time. The coating slurry was composed of a plate-shape alumina in the sol-gel binder for the EPD process, in which particles dispersed in the slurry were deposited on the electrode under an electric field due to the surface charge. We studied the effects of three parameters: the content of boehmite, the aging time, and the applied voltage, on the physical, thermal, and electrical properties of the hybrid composite films by EPD. The amount of boehmite was 10 ~ 20 wt% and the aging time was 0.5 ~ 72, with a fixed amount of plate-shape alumina of 10 wt%. The condition of applied voltage was 5 ~ 30 V with a distance of 2 cm between the electrode during the EPD process. We confirmed that a structure of hybrid composite films of well-ordered plate alumina was deposited on the substrate when the film was prepared using a sol-gel binder composed of 15 wt% boehmite with 1 hr aging time and EPD at 10 V. The process shows a weight loss of 7% at $500^{\circ}C$ in TGA and a breakdown voltage of 8 kV at $87{\mu}m$.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.7 no.1
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• pp.21-29
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• 1993

In this paper, we studied the 50% flashover voltage of lightening impulse which affect the most serious damages on the insulation of the electric power network system. Also its V -t characteristics and corona process phenomena of pure $SF_6, N_2, SF_6-N_2$mixtures under the circumstances of nonuniform field gap are researched. Comparing the characteristics of pure $SF_6$ with that of $SF_6, N_2$mixtures, we discussed that breakdown processes and $SF_6, N_2$ mixture's application to economics.As a results, 50% flashover voltage of $SF_6$ 50% - $N_2$ 50% for impulse voltage is higher then that of 80% of pure SF6, measured data and calculated data by equal area law are almost equal from the points of view of V-t characteristics. Therefore, it has been known that $SF_6$ 50% - $N_2$ 50% mixtures can be used as an economic constitution gas of pure $SF_6$, it is verified that corona processes from Lichtenberg figure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.591-593
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• 2000

In this paper, we describe the results of a combined experimental theoretical study designed to understand and predict the dielectric properties of SF$_{6}$ and SF$_{6}$+Ar mixtures. The electron transport, ionization, and attachment coefficients for pure SF$_{6}$ and gas mixtures containing SF$_{6}$ has been analysed over the E/N range 30~300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] SF$_{6}$+Ar mixtures were measured by time- of- flight method, The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with the experimental and theoretical for a rang of E/N values. Electron energy distribution functions computed from numerical solutions of the electron transport and reaction coefficients as functions of E/N. We have calculated $\alpha$,η and $\alpha$-η the ionization, attachment coefficients, effective ionization coefficients, and (E/N), the limiting breakdown electric-field to gas density ratio, in SF$_{6}$ and SF$_{6}$+Ar mixtures by numerically solving the Boltzmann equation for the electron energy distribution. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of theections of the

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05a
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• pp.74-77
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• 2000

The main objective of this paper is to design and test a new type of polymer ZnO surge arrester for AC power system of railroad vehicles. Metal oxide surge arrester for most electric power system applications, electric train and must not have explosive breakage of the housing to minimize damage to other equipment when subjected to internal high short circuit current. When breakdown of ZnO elements in a surge arrester occurs due to flashover, fault short current flows through the arrester and internal pressure of the arrester rises. The pressure rise can usually be limited by fitting a pressure relief diaphragm and transferring the arc from the inside to the outside of the housing. However, there is possibility of porcelain fragmentation caused by the thermal shock. pressure rise, etc. Non-fragmenting of the housing is the most desired way to prevent damage to other equipment. The pressure change which is occurred by flashover become discharge energy. This discharge energy raises to damage arrester housing and arrester housing is dispersed as small fragment. Therefore, the pressure relief design is requested to obstruct housing dispersion. The main research works are focused on the structure design by finite element method, pressure relief of module, and studies of performance of surge arrester for electric railway vehicle.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1502-1504
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• 2006

본 연구는 $SF_6$와 Dry-air(건조공기)가 혼합된 절연매체의 절연 특성과 부분방전 특성 연구를 위하여 기초실험용 쳄버와 70kV급 GIS mock up 을 이용하여 교류전압을 인가하여 실험이 수행되었다. 전자의 경우, Sphere gap 및 Needle/Plate 전극시스템을 이용하여 순수 $SF_6$가스와 Dry-air의 절연내력을 비교하고, 챔버의 압력을 5기압으로 유지한 상태에서 Dry-air와 $SF_6$가스의 혼합비를 변화시키면서 절연내력이 측정되었다. 후자의 경우, 기초실험에서 도출된 $SF_6$가스와 Dry-air의 최적의 혼합비율을 선택한 후, 방전 개시전압과 부분방전 양상을 순수 $SF_6$가스의 결과와 비교 분석하기 위한 실험을 수행하였다. 이를 위하여 GIS 사고의 주요원인이 되는 결함들, 즉 Protrusion, Floating, Free moving particle 들을 인위적으로 모의하여 Mock up 내부에 설치하고 내부 압력을 5기압으로 유지한 상태에서 수행되었다. 전자의 경우, $0.5{\sim}5$ 기압 범위내 에서 Dry-air 압력을 변화시켰을 때 절연내력은 전극시스템에 무관하게 순수 $SF_6$가스의 결과치의 $40{\sim}50%$정도이다. 또한 챔버 압력이 5기압일 경우, Needle/Plate 전극을 이용했을 경우, Dry-air 가 80% 혼합된 절연매체는 순수 $SF_6$가스 절연내력의 80%정도이다. 후자의 경우, 인가전압을 고정 시켰을 때, 부분방전 패턴과 방전크기는, 순수 $SF_6$가스와 Dry-air 가 80% 혼합된 절연매체는 동일한 패턴과 방전크기를 나타내고 있다. 이러한 결과를 근거로, 가스 압력이 5기압에서 운전되는 전력기기의 절연 매체로서 혼합가스를 사용할 경우, $SF_6$가스와 Dry-air의 혼합비는 2:8정도가 적절한 것으로 제안한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1122-1127
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• 1998

Group II-AF_2$films such as $CaF_2$, $SrF_2$, and $BaF_2$ have been commonly used many practical applications such as silicon on insulatro(SOI), three-dimensional integrated circuits, buffer layers, and gate dielectrics in filed effect transistor. This paper presents electrical and structural properties of fluoride films as a gate dielectric layer. Conventional gate dielectric materials of TFTs like oxide group exhibited problems on high interface trap charge density($D_it$), and interface state incorporation with O-H bond created by mobile hydrogen and oxygen atoms. To overcome such problems in conventional gate insulators, we have investigated $CaF_2$ films on Si substrates. Fluoride films were deposited using a high vacuum evaporation method on the Si and glass substrate. $CaF_2$ films were preferentially grown in (200) plane direction at room temperature. We were able to achieve a minimum lattice mismatch of 0.74% between Si and $CaF_2$ films. Average roughness of $CaF_2$ films was decreased from 54.1 ${\AA}$ to 8.40 ${\AA}$ as temperature increased form RT and $300^{\circ}C$. Well fabricated MIM device showed breakdown electric field of 1.27 MV/cm and low leakage current of $10^{-10}$ A/$cm^2$. Interface trap charge density between $CaF_2$ film and Si substrate was as low as $1.8{\times}10^{11}cm^{-2}eV^{-1}$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.8
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• pp.1466-1477
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• 2016

This paper analyzes the electrical characteristic such as the impedance(Z), inductance(L), and cable resistance($R_p$) according to the change of cable length in order to move the electrical sorting device for distinguishing between AF non-insulated track circuits from the center of railway to outside railway. The simulation is performed to check the voltage difference between the voltage of sender and the voltage of receiver and determine the possibility of the voltage restoration availability in the frequency filter band through the capacitor compensation. It was applied to the results of the simulation to the sorting devices installed in the actual field. It is proved the availability by checking the measured voltage characteristic according to the capacitor compensating change of $10{\mu}F$ and $16{\mu}F$ before, and after the length of cable is increased with 6 meters. Through this, the prevention of breakdown and damage to facilities and the prevention the safety-related accidents of line workers from the train are expected according to moving the sorting devices of AR non-insulated track circuits to outside railway.

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.117-123
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• 2018

Recently, aqueous method has attracted lots of attention because it enables the solution-processed metal oxide thin film with high electrical properties in low temperature fabrication condition to various flexible devices. Focusing the development of aqueous route, many researchers are only focused on metal oxide materials. However, for expansive application of the aqueous-based metal oxide films, the systematic study of performance change with process variables for the development of aqueous-based metal oxide insulator film is urgently required. Here, we propose importance of process variables to achieve high electrical-performance metal oxide insulator based on the aqueous method. We found that the significant process variables including precursor solution temperature and humidity during the spincoating process strongly affect chemical, physical, and electrical properties of $AlO_x$ insulators. Through the optimization of significant variables in process, an $AlO_x$ insulator with a leakage current value approximately $10^5$ times smaller and a breakdown voltage value approximately 2-3 times greater than un-optimized $AlO_x$ was realized. Finally, by introducing the optimized $AlO_x$ insulators to solutionprocessed $InO_x$ TFTs, we successfully achieved $InO_x/AlO_x$ TFTs with remarkably high average field-effect mobility of ${\sim}52cm^2V^{-1}\;s^{-1}$ and on/off current ratio of 106 at fabrication temperature of $250^{\circ}C$.