• Proceedings of the KIEE Conference
• /
• 1999.07d
• /
• pp.1686-1688
• /
• 1999

The FLR(Field Limiting Ring) structure with a buried ring is proposed to improve breakdown voltage. The breakdown characteristics of proposed structure is verified by two-dimensional device simulator. ATLAS. It has shown that the breakdown voltage of the proposed structure is increased by 11 % compared with that of the FLR.

• 전기의세계
• /
• v.27 no.2
• /
• pp.64-68
• /
• 1978

By applying the streamer breamer breakdown criterion and the surface roughness factor, the effet of field distortion due to conductor surface roughness on breakdown is investigated theoretically in a uniform-field of compressed SF$_{6}$. It has been shown that the streamer constant has a significant influence on the threshold of breakdown and different shapes of protrusions do not result in different thresholds of breakdowns. Moreover, uniform-field tests can give results which apply to e-ratio coaxial-electrode systems of practical dimensions, and may offer some advantages compared with coaxial-electrode tests.s.

• Proceedings of the KIEE Conference
• /
• 1998.07d
• /
• pp.1337-1339
• /
• 1998

The trench termination scheme is introduced for high voltage devices. The curvature of the depletion region at field limiting ring is critical factor to determine the breakdown voltage. The smooth curvature of the depletion junction alleviate the electric field crowding effect around this region. In the trench field limiting ring, the radius of the depletion region is smaller than conventional field limiting ring, but the distance between every trench is spaced small enough to punchthrough before initiation of local breakdown. The trench field limiting ring on silicon can ne formed by RIE followed by oxidation on side wall surface of the trench, and polysilicon filling. The combined termination of this trench floating field ring and field plate have been designed and analyzed. The breakdown simulation by 2-dimensional TCAD shows that the cylindrical junction breakdown voltage for substrate doping might be 99 percent of the ideal breakdwon voltage for substrate doping concentration of $3\times10^{14}cm^{-3}$ with about $100{\mu}m$ of lateral termination width.

• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1649-1651
• /
• 2001

The effect of ribbed spacers having metallic particle attached to the post-type spacer on dielectric breakdown phenomena has been investigated using electric field analysis for imaginary streamer process and a breakdown experiment. It was described that the electric field analysis and the dielectric breakdown test were performed on the case that the particle was attached to the various position of the ribbed spacer having various shapes. As a result, the breakdown voltage of the spacer with two ribs was highest, and it was varied by the length and the thickness of the rib. Especially, in case of the rib with round edge, the breakdown voltage was higher than that with rectangular edge, which complied with the result through the field analysis.

• Journal of Industrial Technology
• /
• v.8
• /
• pp.23-30
• /
• 1988

In this paper, the characteristics of electrical breakdown and TDDR (Time Dependant Dielectric Breakdown) were studied to evaluate stability and reliability of thin insulator films such as oxide and nitride. As the oxide film thickness decreased, the electrical breakdown field was increased proportioning to its reverse square root, ${d^{-\frac{1}{2}}}$. As for the temperature dependance of breakdown field, its field was inclined to decrease as temperature increased. It also showed that oxide charge (Qss) was changed by stress field and stress time. Consequently, TDDB characteristics and breakdown mechanism proved the improvement of reliability and stability and provided the accurate analysis to predict a device life time.

• Proceedings of the KIEE Conference
• /
• 1987.11a
• /
• pp.286-289
• /
• 1987

The measurements of prebreakdown currents and breakdown voltages have been made for smooth rough, protrusion plane parallel stainless steel electrodes in vacuum ($10^{-5}$ torr), as a function of electrode separation, in the range $0.4{\sim}2.4mm$ using DC source($0{\sim}200KV$). Thee prebreakdwon currents of a each condition are found to be consistent with the Fouler-Nondheim field emission theory. The effect of the electrode surface condition on the local field enhancement factors, prebreakdown currents, and on the breakdown voltages are shown. The breakdown mechanism of a small vacuum gap was ascertained as the field emission corresponding the F-N theory. Therefore, these results suggest that the field emission currents following the electrode surface condition play a major role for initiation of DC breakdown.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.191-192
• /
• 2005

The reverse breakdown voltages of 4H-SiC SBD(schottky barrier diode)s with FP(Field Plate) and/or FLR(Field Limiting Ring) as a edge termination, were investigated. The breakdown voltages of SBDs with FP ware investigated varying the overlap width from $1{\mu}m$ to $30{\mu}m$. The maximum average breakdown voltages was 475V. There is no significant changes for the devices with overlap width of between $5{\mu}m\sim30{\mu}m$. It was confirmed that the dielectric breakdown of the thin thermal oxide is main cause of device failure. However, the breakdown voltage of SBD with FLR was 1400V even though the FLR edge termination structure was not optimized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.1200-1203
• /
• 2003

The dielectric breakdown of epoxy composites used for transformers was experimented and then its data were applied to Weibull distribution probability. First of all, speaking of dielectric breakdown properties, the more hardener increased, the stronger breakdown strength became at low temperature because of cross-linked density by the virtue of ester radical. The breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised and the electric field is concentrated. In the case of filled specimens with treating silane, the breakdown strength become much higher. Finally, according to Weibull distribution analysis, reducing breakdown probability of equipment insulation lower than 0.1% level requires the allowable field allowable field intensity values to be kept under 21.5 MV/cm.

• Proceedings of the KIEE Conference
• /
• 1997.07d
• /
• pp.1618-1620
• /
• 1997

A GaAs schottky diode with taper field plate is proposed to increase breakdown voltage. Breakdown voltage is calculated by device simulator MEDICI. The GaAs schottky diode with taper gate which has $5.7^{\circ}$ taper angle have shown 45% increase in the breakdown voltage compared with conventional field plate GaAs schottky diode.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.57 no.2
• /
• pp.245-251
• /
• 2008

Although many studies have been carried out about binary gas mixtures with $SF_6$, few studies were presented about breakdown characteristics of $SF_6/CF_4$ mixtures. At present study the breakdown characteristics of $SF_6/CF_4$ mixtures in non-uniform field was performed. The experiments were carried out under AC voltage and standard lightning impulse(SLI) voltage. Breakdown characteristics were investigated for $SF_6/CF_4$ mixtures when AC voltages and standard lighting impulse voltage was applied in a needle-plane. The needle-plane electrode whose gap distance was 3 mm were used in a test chamber. $SF_6/CF_4$ mixtures contained from 0 to 100% $SF_6$ and the experimental gas pressure ranged from 0.1 to 0.5 MPa. The breakdown characteristics of $SF_6/CF_4$ mixtures in non-uniform field may be influenced by defects like needle-shaped protrusions. In case of slowly rising SLI voltage and AC voltage it is enhanced by corona-stabilization. This phenomena caused by the ion drift during streamer development and the resulting space-charge is investigated. In non-uniform field under negative SLI voltage the breakdown voltage was increase linearly but under positive SLI voltage the breakdown voltage increase non-linearly. The breakdown voltage in needle-plane electrode displayed N shape characteristics for increasing the content of $SF_6$ at AC voltage. $SF_6/CF_4$ mixture has good dielectric strength and arc-extinguishing properties than pure SF6. This paper presents experimental results on breakdown characteristics for various mixtures of $SF_6/CF_4$ at practical pressures. We could make an environment friendly gas insulation material with maintaining dielectric strength by combing $SF_6\;and\;CF_4$ which generates a lower lever of the global warming effect.