• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.2
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• pp.14-19
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• 2011

We have fabricated GaN Schottky barrier diode (SBD) for high-voltage applications on Si substrate. The leakage current and the electrical characteristics of GaN SBD are investigated by annealing metal-semiconductor junctions. Ohmic junctions of Ti/Al/Mo/Au and Schottky junctions of Ni/Au are used in the fabrication. A test structure is proposed to measured buffer leakage current through a mesa structure. When annealing temperature is increased from $700^{\circ}C$ to $800^{\circ}C$, measured buffer leakage current is also increased from 87 nA to 780 nA at the width of 100 ${\mu}m$. The diffusion of Au, Ti, Mo, O into GaN buffer layer increases the leakage current and that is verified by Auger electron spectroscopy. Experimental results show that the low leakage current and the high breakdown voltage of GaN SBD are achieved by annealing metal-semiconductor junctions.

• Journal of IKEEE
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• v.20 no.3
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• pp.220-225
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• 2016

In this paer, low on-resistance and high-power trench gate MOSFET (Metal-Oxide-Silicon Field Effect Transistor) incorporating current sensing FET (Field Effect Transistor) is proposed and evaluated. The trench gate power MOSFET was fabricated with $0.6{\mu}m$ trench width and $3.0{\mu}m$ cell pitch. Compared with the main switching MOSFET, the on-chip current sensing FET has the same device structure and geometry. In order to improve cell density and device reliability, self-aligned trench etching and hydrogen annealing techniques were performed. Moreover, maintaining low threshold voltage and simultaneously improving gate oxide relialility, the stacked gate oxide structure combining thermal and CVD (chemical vapor deposition) oxides was adopted. The on-resistance and breakdown voltage of the high density trench gate device were evaluated $24m{\Omega}$ and 100 V, respectively. The measured current sensing ratio and it's variation depending on the gate voltage were approximately 70:1 and less than 5.6 %.

• The Korean Journal of Zoology
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• v.18 no.2
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• pp.87-101
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• 1975

Electron microscopic studies on the ultrastructure of the mouse oocyte were made to investigate the inhibition of germinal vesicle breakdown by dibutyryl cAMP. The nuclear membrane of the dibutyryl cAMP-treated oocyte is characterized by a decreased degree of folding, maintains the normal double membrane structure, and shows an increased occurrence of the nuclear pore. It is suggested that these may be related to the suppression of the maturation of oocytes at the germinal vesicle. Mitochondria in the control cell were shown to be spread evenly throughout the cytoplasm and structurally underdeveloped or transitionary having little cristae development. On the contrary, mitochondria in the treated oocyte were found to be localized mainly around the nucleus and to show a greater extent of cristae development. The oocyte treated with dibutyryl cAMP appears to have fewer and structurally simpler lysosomes as compared to the control. The Golgi complex in the control oocyte exhibits the typical granular and lamellar structure, whereas that in the treated cell is poorly developed. Many multivesicular bodies, tonofilaments, and free ribosomes were observed in the control as well as in treated cells. The microvilli become structurally irregular, and a development of the perivitelline space is apparent in the treated oocyte. It is concluded that there is no basic difference in the ultrastructure between the oocytes treated with dibutyryl cAMP for 24 hours in the medium and those collected directly from the follicle. However, the finding that dibutyryl cAMP induces a development of more pores along the nuclear membrane strongly suggests the possibility that this compound inhibits the maturation of oocytes by influencing the permeability of the nuclear membrane.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.423-429
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• 1997

We fabricated PLT thin films on ITO substrate for flat pannel display and investigated the characteristics, then we applicated to electroluminescent device and investigated application possibility. When we fabricated PLT thin films with substrate temperature of $500^{\circ}C$, and pressure of 30 mTorr, the relative deielectric constant and breakdown electricfield of PLT thin films were 120 and 3.2MV/cm. The electric resistivity was $2.0{\times}10^{12}{\Omega}{\cdot}cm$. PLT thin films had polycrystal structure of perovskite and pyrochlore at the higher substrate temperature than $450^{\circ}C$, and had good crystallinity at higher pressure. To use PLT insulator film and ZnS:Mn phosphor, we fabricated thin film electroluminescent device of ITO/PLT/ZnS:Mn/PLT/Al structure. At the result, threshold voltage was $35.2V_{rms}$ and brightness was $2400cd/m^{2}$ at $50V_{rms}$ and 1kHz. Maximum luminescence efficiency was 0.811m/W.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.59 no.4
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• pp.462-466
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• 2010

The purpose of this study is to evaluate the safety of a wire connector fabricated for the effective installation of a lighting fixture including its contact resistance, insulation resistance, withstanding voltage characteristics, etc., and to provide the basis for the analysis and judgment of PL(Product Liability) dispute by presenting a damage pattern due to a general flame and overcurrent. This study applied the Korean Standard (KS) for the incombustibility test of the connector using a general flame and performed an overcurrent characteristics test of the connector using PCITS (Primary Current Injection Test System). The contact resistance of the housing connector was measured using a high resistance meter and the insulation resistance was measured using a multimeter. In addition, a supply voltage of AC 1,500V for testing the withstanding voltage characteristics was applied to both ends of the connector. Measurement was performed on 5 specimens and the measured values were used as a basis for judgment. Since the connector is fabricated in the form of a housing, it can be connected and separated easily and has a structure that allows no foreign material to enter. In addition, since it has a structure that allows wires to be connected only when their polarity is identical, any misconnection that may occur during installation can be prevented. When the incombustibility test was performed by applying a general flame to the connector, it showed outstanding incombustibility characteristics and the blade and blade holder connected to the housing remained firmly secured even after the insulation sheath (PVC) was completely destroyed by fire. In addition, the mechanism of the damaged connecting wire showed a comparatively uniform carbonization pattern and it was found that some residual melted insulation material was attached to both ends. In the accelerated life test (ALT) to which approximately 500% of the rated current was applied, the connector damage proceeded in the order of white smoke generation, wire separation, spark occurrence and carbonization. That is, it could be seen that the connector damaged by overcurrent lost its own metallic color with traces of discoloration and carbonization. The contact resistance of the connector at a normal state was 2.164mV/A on average. The contact resistance measured after the high temperature test was 3.258mV/A. In addition, the insulation resistance after the temperature test was completed was greater than $10G\Omega$ and the withstanding voltage test result showed that no insulation breakdown occurred to all specimens showing stable withstanding voltage and insulation resistance characteristics.

• Journal of Service Research and Studies
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• v.12 no.3
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• pp.115-133
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• 2022

This study was conducted to design a new human model and education system for the sustainable life of mankind. Human society is facing a crisis. This study presents a comprehensive plan as the final version of the servicism study. Since the problems of human society are all human problems, research was conducted focusing on the new human and education system. Modern society is markedly different from the existing society in terms of time, space, and humanity, and the leading role of individuals is increased due to the increase in literacy, which can lead to breakdown and ground breaking in an instant. As the value of growth and freedom is increasing, technological innovation is accelerating, and industries and enterprises are growing significantly, so new technologies and industries may put human society at great risk. This study comprehensively diagnosed these problems in the current human society. The problems related to human and education were presented in depth while analyzing and synthesizing the problems presented in the existing servicism studies. The necessary and sufficient conditions for a new system to solve the problems raised were derived. And a system that satisfies these conditions was derived and presented. The new system was named servicism human and education system as a system based on the service philosophy. The structure, operation model, and implementation plan of the new system were presented. The basic structure is a human view that recognizes both reason and irrationality, an education system in which intelligence education and virtue education are balanced, and an education system in which human effort and the values of unwieldy nature are respected. A new education system needs to be put into operation along with the improvement of modern ideology and the compensation system for efforts. Since this study presented a macroscopic direction, further studies are needed to further refine this study.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.1
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• pp.1-7
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• 2024

β-Ga₂O₃ is a material with a wide band gap of ~4.8 eV and a high breakdown-voltage of 8 MV/cm, and is attracting much attention in the field of power device applications. In addition, compared to representative WBG semiconductor materials such as SiC, GaN and Diamond, it has the advantage of enabling single crystal growth with high growth rate and low manufacturing cost [1-4]. In this study, we succeeded in growing a 10 mm thick β-Ga₂O₃ single crystal doped with 0.3 mol% SnO₂ through the EFG (Edge-defined Film-fed Growth) method using multi-slit structure. The growth direction and growth plane were set to [010]/(010), respectively, and the growth speed was about 12 mm/h. The grown β-Ga₂O₃ single crystal was cut into various crystal planes (010, 001, 100, ${\bar{2}}01$) and surface processed. The processed samples were compared for characteristics according to crystal plane through analysis such as XRD, UV/VIS/NIR/Spec., Mercury Probe, AFM and Etching. This research is expected to contribute to the development of power semiconductor technology in high-voltage and high-temperature applications, and selecting a substrate with better characteristics will play an important role in improving device performance and reliability.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.8
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• pp.13-19
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• 2001

We report on the fabrication and characterization of $Al_{0.3}Ga_{0.7}N$ HFETs with different barrier layer thickness which were grown using plasma-assisted molecular beam epitaxy (PAMBE). The barrier thickness of $Al_{0.3}Ga_{0.7}N$/GaN HFETs could be optimized in order to maximize 2 dimensional electron gas induced by piezoelectric effect without the relaxation of $Al_{0.3}Ga_{0.7}N$ layer. $Al_{0.3}Ga_{0.7}N$/GaN (20 nm/2 mm) HFET with 0.6 ${\mu}m$-long and 34 ${\mu}m$-wide gate shows saturated current density ($V_{gs}=1\;V$) of 1.155 A/mm and transconductance of 250 ms/mm, respectively. From high frequency measurement, the fabricated $Al_{0.3}Ga_{0.7}N$/GaN HFETs showed $F_t=13$ GHz and $F_{max}=48$ GHz, respectively. The uniformity of less than 5% could be obtained over the 2 inch wafer. In addition to the optimization of epi-layer structure, the relation between breakdown voltage and high frequency characteristics has been examined.

• Korean Journal of Construction Engineering and Management
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• v.17 no.2
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• pp.99-109
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• 2016

The utilization of Building Information Modeling (BIM) has increased in order to enhance the integration of information for management and resources throughout the construction projects. Therefore, various BIM softwares have been used under open BIM environments in the building and plant construction industry. However, it has obstructive factors due to the lack of interoperability. In order to address this problem, this study conducted an interoperability analysis of BIM software focused on user-defined properties for enhanced function and efficiency. Result of the analysis shows that authoring tools have more interoperability problems than viewer tools and simulation tools have. In terms of interoperability, user-defined properties outperforms than those of system basic properties and logic data. Therefore, it was found that functional improvement and workload minimization in BIM can be attained by applying the GBS (an user-defined property for automatic manipulation of BIM proposed by Jung et al. 2013) that enables automatic link between geometric data and non-geometric data. In this respect, this study concludes that the application of user-defined property (e.g. GBS) can be an effective method for information integration throughout construction projects.

• Journal of fish pathology
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• v.24 no.3
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• pp.197-204
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• 2011

The edible ascidian Halocynthia roretzi is a commercially important fisheries resource in Korea. However, for the last several years, outbreaks of mass mortalities of the species have been occurring along the south and east coasts of Korea, where most ascidians are produced. Although it is known that tunic-softness syndrome is associated with these mortality events, the agent causing the syndrome has not yet been confirmed. To determine the agent causing tunic-softness syndrome, healthy and diseased ascidians were collected in March 2011 from Tongyeong, on the south coast of Korea, and were used for biological and pathological investigations. The results showed that diseased ascidians exhibited remarkably reduced body fluid, fatness index, and tunic index compared with healthy specimens. Interestingly, bi-flagellated protozoans were observed specifically in the tissue imprints and tunic cultures of diseased ascidians at an occurrence rate of 97.5%. Histological observation showed that the thickness of the tunics of diseased ascidians was reduced by half, and irregular structure and breakdown of the tunic fiber bundles were observed. In particular, flagellate-like cells were observed in the diseased ascidians. Our study clearly shows that bi-flagellated protists are present only in the softened ascidians, suggesting that the flagellates are partly or entirely associated with soft-tunic syndrome. Accordingly, further investigations to verify the effects of the flagellates found in the present study on soft-tunic syndrome should be conducted.