• Journal of the Korean Society of Systems Engineering
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• v.13 no.1
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• pp.67-72
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• 2017

Work breakdown structure is a central element in project management and systems engineering. Composing a quality work breakdown structure is essential for the success of any project. In this paper, extensive use of work breakdown structure during phase one of KSLV-II launch vehicle development program is presented. The advantages and disadvantages of applying WBS-centric program and systems engineering management to the project are reviewed.

• International conference on construction engineering and project management
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• 2015.10a
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• pp.691-692
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• 2015

Several scholars in South Korea have predicted that maintenance costs of social infrastructure will sharply increase from the mid-2020s, and cause budgetary deficits among facilities management agencies. Interest in infrastructure asset management (IAM) is rising as a solution to such problem. In this study, an information system for asset valuation that reflects the salvage value and deferred cost of social infrastructure based on WBS (work breakdown structure) was developed in consideration of IAM. To reuse the construction cost information such as the acquisition cost, the interconnection between CBS (cost breakdown structure) and WBS was considered. Furthermore, asset valuation information was developed with XML schema to facilitate the exchange and reuse of the information among project participants.

• Korean Journal of Construction Engineering and Management
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• v.21 no.3
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• pp.11-19
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• 2020

Since an accident in construction industry has been higher than others for decades, the accident in construction industry should be decreased. To prevention this problem, the work breakdown structure (WBS) and risk breakdown structure (RBS) are presented. the WBS and RBS, are hierarchy structure which can find fatal incident considering type of building and type of work easily and quickly. So, this study aims to develop framework for the integrated WBS-RBS to prevent fatal incident on construction industry. The research process is conducted by following 3 steps: (I) collection of data; (II) classification of data; and (III) development of the integrated WBS-RBS. The result of this study can propose the most dangerous fatal incident aspect of type of building, type of work, and type of accident. Through the result, the decision maker can reduce or eliminate fatal incident considering type of building, type of work and type of accident in construction industry.

• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.21-25
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• 2013

This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to 4 V in the previous work. This is because the surface effect at the drain side decreases the channel current and the impact ionization in the channel at high drain voltage. In order to increase the breakdown voltage at the same asymmetric gate-recess structure, the InGaAs channel structure is replaced with the InGaAs/InP composite channel in the simulation. The simulation results with InGaAs/InP channel show that the breakdown voltage increases to 6V in the MHEMT as the current decreases. In this paper, the simulation results for the InGaAs/InP channel are shown and analyzed for the InGaAs/InP composite channel in the MHEMT.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.377-380
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• 2006

Manufacturing process of Ti-6Al-4V alloy billet was investigated with FEM simulation and experimental analysis. Before the breakdown process of Ti-6Al-4V alloy ingot, FEM simulation for the breakdown processes of Ti-6Al-4V alloy ingot was used to calculate the forging load and state variables such as strain, strain rate and temperature. In order to breakdown the ingot structure and make an equiaxed structure billet, two different processes were employed for a VAR/VAR processed Ti-6Al-4V alloy ingot. Firstly, the ingot was cogged in single-phase $\beta$ field at the temperature of $1,100^{\circ}C$. In the process, the coarse and inhomogeneous structure developed by the double melting process was broken down. The second breakdown was performed by upsetting and cogging processes in $\alpha+\beta$ phase field to obtain the microstructure of fine equixed $\alpha$ structure in the matrix of transformed $\beta$. Finally, the mechanical properties of Ti-6Al-4V alloy billet made in this work were compared with those of other billet and ring product.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05a
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• pp.52-56
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• 2001

The Breakdown electric field of ZnO semiconductor devices in voltage-current characteristics was increased by increasing of additive materials. The specimen that has not additive materials was not formed spinel structure. The critical voltage that has not spinel structure was 235[V]. When the additive materials has 0.5 and 2[mol%], the Breakdown electric field was 840 and 758[V] in each additive materials. The Breakdown electric field of varistors as a factor of voltage and current was increased by addition of oxide antimony. The varistors that has oxide antimony was linearly increased in low electric field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.14-15
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• 2009

Insulated Gate Bipolar Transistor(IGBTs) are widely used in power device industry. However, to improve the breakdown voltage, IGBTs are suffered from increasing on-state voltage drop due to structural design. In this paper, the new structure is proposed to solve this problem. The proposed structure has double p-floating layer inserted in n-drift layer. The p-floating layers improve the breakdown voltage compared to conventional IGBT without change of other electrical characteristics such as on-state voltage drop and threshold voltage. this is because the p-floating layers expand electric field distribution at blocking state. A electrical characteristic of proposed structure is analyzed by using simulators such as TSUPREM and MEDICI. As a result, on-state voltage drop and threshold voltage are same to a conventional TIGBT, but breakdown voltage is improved to 16%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.170-173
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• 2003

In this paper, we proposed a new bulk LDMOS structure which can be used for RF application, and its fabrication steps were introduced. The simulated devices consist of three types: Bulk device, SLB(SOI Like Bulk), and SOI device. As a result of process and device simulation, we showed electrical characteristics, such as threshold voltage, subthreshold slope, DIBL(Drain Induced Barrier Lowering), off-state current, and breakdown voltage. In this simulation study, the lattice temperature model was adopted to see the device characteristics with lattice temperature during the operation. SLB device structure showed the best breakdown characteristics among the other structures. The breakdown voltage of SLB structure is about 9V, that of bulk is 7V, and that of SOI is 8V.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1938-1940
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• 1999

Trench-Gate structures are proposed to improve the breakdown voltage of LDMOS as well as the second breakdown under forward biased gate. Two dimensional device simulator PISCES II has been used to explain the effects of the drift layer thickness on the breakdown voltage of the conventional LDMOS and Trench Gate LDMOS in terms of potential contour lines. The Trench Gate structure has shown improvements in the breakdown voltage by about 44% and 84% for $V_G$=0 V and $V_G$=15 V respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.74-75
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• 2008

TIGBT has some merits which are lower on-state voltage drop and smaller cell pitch, but also has a defect which is relatively lower breakdown voltage in comparison with planar IGBT. This lower breakdown voltage is due to the electric field which is concentrated on beneath the vertical gate. Therefore in this paper, new trench IGBT structure is proposed to improve breakdown voltage In the new proposed structure, a narrow oxide beneath the trench gate edge where the electric field is concentrated is extended into rectangular shape to decrease the electric field. As a result, breakdown voltage is improved to 23%.