• Journal of Welding and Joining
• /
• v.13 no.3
• /
• pp.89-95
• /
• 1995

Effect of boron on corrosion resistance of Type 304 stainless steel has been studied. Boron tends to segregate at the grain boundaries during cooling after solution treatment, and so boron treated steel usually exhibits a ditch structure under the 10% oxalic acid test. However, it was found that the addition of 25 ppm boron in Type 304 steel has no effect on the general and pitting corrosion resistance while it has a little effect on the intergranular corrosion resistance.

• Journal of Radiopharmaceuticals and Molecular Probes
• /
• v.8 no.1
• /
• pp.17-23
• /
• 2022

Boron neutron capture therapy is a precision treatment technology that selectively destroys only tumor cells by irradiating thermal neutrons after accumulating boron drugs in tumor cells. Brain tumor is difficult to diagnose and treat due to the low permeability and targeting of drugs caused by the blood-brain-barrier. Crossing the BBB is essential for drug delivery to the brain. In this study, we designed and synthesized a novel compound incorporating benzothiazole to develop a boron drug with high BBB permeability and selectivity for brain tumor cells. In addition, their potential as a BNCT drugs was evaluated.

• Analytical Science and Technology
• /
• v.5 no.1
• /
• pp.127-134
• /
• 1992

Effects of boron addition on microstructure and phases of plasma are melted tungsten have been investigated by optical microscopy, scanning electron microscopy, Auger electron spectroscopy, X-ray diffractometer, measurements of grain size and hardness. The change in the microstructure upon boron addition was studied by optical microscopy. It was observed that the grain refinement was induced upon content within the limit of solubility. When the boron content was above the solubility limit, two phases of primary tungsten and eutectic structure were observed and confirmed by AES and XRD analysis. It was also shown that recrystallization temperature was increased and recrystallized grain size was reduced as boron content increased.

• Preventive Nutrition and Food Science
• /
• v.10 no.4
• /
• pp.353-356
• /
• 2005

It has been recently reported that boron affects bone metabolism in humans and animals. In this study we examined whether boron affects the proliferation on various cell types, MG-63, HOS, Raw 264.7 and SK-N-SH. When treated with different concentrations of boron $(1,\;10,\;100{\mu}M)$ for 24 and 48 hr, the proliferation of MG-63 cells was enhanced at $10{\mu}M\;(p<0.05)$, for 24 hr. In HOS cells, boron had no effect on cell proliferation at 24 or 48 hr. In addition, treatment of pre-osteoclastic cells (Raw 264.7) with 1, 10, $100{\mu}M$ boron resulted in no effect on cell proliferation. Proliferation of neuronal cells (SK-N-SH) was enhanced by boron in a concentration dependent manner at low concentrations (0.1, 0.5, $1{\mu}M$). Besides proliferation activity, boron has an effect on the enhancement of NO production in SK-N-SH cells in a concentration-dependent manner. These studies showed that boron enhances proliferation of osteoblastic cells (especially MG-63), depending upon the concentration of boron. These results also provide further evidence of the positive effects of boron in neuronal disease.

• Corrosion Science and Technology
• /
• v.19 no.1
• /
• pp.1-7
• /
• 2020

Chalk River Unidentified Deposits (CRUDs) were collected from the Korean pressurized water reactor (PWR) plant (A, B, and C) where the axial offset anomaly (AOA) occurred. AOA, also known as a CRUD-induced power shift, is one of the key issues in maintaining stable PWR plant operations. CRUDs were sampled from spent nuclear fuel rods and analyzed using an electron probe micro-analyzer (EPMA). This paper describes the characteristics of boron-deposits from the CRUDs sampled from twice-burnt assemblies from the Korean PWR. The primary coolant of a PWR contains boron and lithium. It is known that boron deposition occurs in a thick CRUD layer under substantial sub-cooled nucleate boiling (SNB). The results of this study are summarized as follows. Boron was not found at the locations where the existence was confirmed in simulated CRUDs, in other words, the cladding and CRUD boundaries. Nevertheless, we clearly observed the presence of boron and confirmed that boron existed as a lump in crystalline form. In addition, the study confirmed that CRUD existed in a crystal form with a unique size of about 10 ㎛.

• Korean Journal of Metals and Materials
• /
• v.56 no.12
• /
• pp.915-920
• /
• 2018

With the development of modern microelectronics technologies, the power density of electronic devices is rapidly increasing, due to the miniaturization or integration of device elements which operate at high frequency, high power conditions. Resulting thermal problems are known to cause power leakage, device failure and deteriorated performance. To relieve heat accumulation at the interface between chips and heat sinks, thermal interface materials (TIMs) must provide efficient heat transport in the through-plane direction. We report on the enhanced thermal conduction of $Al_2O_3-based$ polymer composites, fabricated by the surface wetting and texturing of thermally conductive hexagonal boron nitride(h-BN) nanoplatelets with large anisotropy in morphology and physical properties. The thermally conductive polymer composites were prepared with hybrid fillers of $Al_2O_3$ macro beads and surface modified h-BN nanoplatelets. Hexagonal boron nitride (h-BN) has high thermal conductivity and is one of the most suitable materials for thermally conductive polymer composites, which protect electronic devices by efficient heat dissipation. In this study, we synthesized hexagonal boron nitride nanoparticles by the pyrolysis of cost effective precursors, boric acid and melamine. Through pyrolysis at $900^{\circ}C$ and subsequent annealing at $1500^{\circ}C$, hexagonal boron nitride nanoparticles with diameters of ca. 50nm were synthesized. We demonstrate that the addition of a small amount of calcium fluoride ($CaF_2$) during the preparation of the melamine borate adduct significantly enhanced the crystallinity of the h-BN and assisted the growth of nanoplatelets up to 100nm in diameters. The addition of a small amount of h-BN enhanced the thermal conductivity of the $Al_2O_3-based$ polymer composites, from 1.45W/mK to 2.33 W/mK.

• 한국초전도학회:학술대회논문집
• /
• 2008.08a
• /
• pp.7-7
• /
• 2008

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.8
• /
• pp.563-569
• /
• 1999

Boron doped CdS films were prepared by chemical bath deposition using boric acid$(H_3BO_3)$ as donor dopant source, and their electrical, optical properties were investigated as a function of doping concentration. In addition, effects of boron doping of CdS films on characteristics of CdS/CdTe solar cells were investigated. Boron doping highly decreased the resistivity and slightly increased optical band gap of CdS films. The lowest value of resistivity was $2 \Omega-cm \;at\; H_3BO_3/Cd(Ac)_2$ molar ratio of 0.1. For the molar ratio more than 0.1, however, the resistivity increased because of decreasing carrier concentration and mobility and showed similar value for undoped films. The photovoltaic characteristics of CdS/CdTe solar cells with boron doped CdS film improved due to the decrease of the conduction band-Fermi level energy gap of CdS films and the series resistance of solar cell.

• Bulletin of the Korean Chemical Society
• /
• v.32 no.7
• /
• pp.2227-2232
• /
• 2011

The new metrology, Advanced Poly-silicon Ultra-Trace Profiling (APUTP), was developed for measuring bulk Cu and Ni in heavily boron-doped silicon wafers. A Ni recovery yield of 98.8% and a Cu recovery yield of 96.0% were achieved by optimizing the vapor phase etching and the wafer surface scanning conditions, following capture of Cu and Ni by the poly-silicon layer. A lower limit of detection (LOD) than previous techniques could be achieved using the mixture vapor etching method. This method can be used to indicate the amount of Cu and Ni resulting from bulk contamination in heavily boron-doped silicon wafers during wafer manufacturing. It was found that a higher degree of bulk Ni contamination arose during alkaline etching of heavily boron-doped silicon wafers compared with lightly boron-doped silicon wafers. In addition, it was proven that bulk Cu contamination was easily introduced in the heavily boron-doped silicon wafer by polishing the wafer with a slurry containing Cu in the presence of amine additives.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.36 no.7
• /
• pp.731-736
• /
• 2012

A new method for producing boron-containing nanoparticles is described. Boron trichloride ($BCl_3$) and methane ($CH_4$) are dissociated through injection into a thermal plasma followed by a nucleation process producing boron or boron carbide nanoparticles. X-ray photoelectron spectroscopy was used to detect B-C bonds related to the carbide state and to probe the ratio of boron to carbon in the B-C bond structure. In addition, nanoparticles were characterized with scanning transmission electron microscopy and electron energy loss spectroscopy. It was found that nanoparticles were in the range 30-70 nm and a boron to carbon ratio in the B-C bond structure of up to 2 can be reached when $BCl_3$ of 20 sccm and $CH_4$ of 25 sccm were used.