• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.2
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• pp.75-78
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• 2009

Si-doped GaAs single crystals were grown by vertical gradient freeze using PBN crucibles. The amount of oxide layer $B_{2}O_{3}$ in PBN crucible was changed($0{\sim}0.2wt%$) and measured the concentration of carriers. The segregation coefficients of Si in GaAs melt decreased rapidly from initial 0.1 to 0.01 as the amount of $B_{2}O_{3}$ increases. At the same time, concentration of carriers was shown to decrease. It is likely that the reaction between dopant Si and $B_{2}O_{3}$ in GaAs melt results in the reduction of Si dopants(donor) while increase in the amount of boron(acceptor). The thin layer of $B_{2}O_{3}$ glass in PBN crucible was proved to be a better way to reduce defect formation rather than the total amount of $B_{2}O_{3}$.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.104-111
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• 2001

B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4, CH_4,\;and\; B_2H_6$. Physical and chemical properties of a-SiC:H films grown with varing the ratio of $B_2H_6/(SiH_4+CH_4)$ were characterized with various analysis methods including scanning electron microscopy (SEM), X-ray diffractometry (XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, secondary ion mass spectroscopy (SIMS), UV absorption CH_4spectroscopy and electrical conductivity measurements. With the B-doping concentration, the doping efficiency and the micro-crystallinity were decreased and the film became amorphous when $B_2H_6/(SiH_4{plus}CH_4)$ was over $5{\times}10^{-3}$. The addition of $B_2H_6$ gas during deposition decreased the H content in the film by lowering the quantity of Si-C-H bonds. Consequently, the optical band gap and the activation energy of a-SiC:H films were decreased with increasing the B-doping level.

• Progress in Superconductivity
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• v.9 no.1
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• pp.62-67
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• 2007

The effects of the heat-treatment temperature on the carbon (C) substitution amount, full width at half maximum (FWHM) value, critical temperature ($T_c$), critical current density ($J_c$) have been investigated for 10 wt % malic acid ($C_4H_6O_5$)-doped $MgB_2/Fe$ wires. All the samples were fabricated by the in-situ powder-in-tube (PIT) method and heat-treated within a temperature range of $650^{\circ}C$ to $1000^{\circ}C$. As the heat-treatment temperature increased, it seemed that the lattice distortion was increased by a more active C substitution into the boron sites from the malic acid addition. These increased electron scattering defects seemed to enhance the $J_c-H$ properties in spite of an improvement in the crystallinity, such as a decrease of the FWHM value and an increase of the $T_c$. Compared to the un-doped wire heat-treated at $650^{\circ}C$ for 30 min, the $J_c$ was enhanced by the C doping in a high-field regime. The wire heat-treated at $900^{\circ}C$ resulted in a higher magnetic $J_c$ of approximately $10^4\;A/cm^2$ at 5 K and 8 T.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.3
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• pp.177-184
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• 2014

In chemical vapor deposition(CVD) tungsten silicide(WSix) dual poly gate(DPG) scheme, we observed the fluorine effects on gate oxide using the electrical and physical measurements. It is found that in fluorine-rich WSix NMOS transistors, the gate thickness decreases as gate length is reduced, and it intensifies the roll-off properties of transistor. This is because the fluorine diffuses laterally from WSix to the gate sidewall oxide in addition to its vertical diffusion to the gate oxide during gate re-oxidation process. When the channel length is very small, the gate oxide thickness is further reduced due to a relative increase of the lateral diffusion than the vertical diffusion. In PMOS transistors, it is observed that boron of background dopoing in $p^+$ poly retards fluorine diffusion into the gate oxide. Thus, it is suppressed the fluorine effects on gate oxide thickness with the channel length dependency.

• Proceedings of the Korean Society of Crop Science Conference
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• 2017.06a
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• pp.247-247
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• 2017

Byobusan area of Aomori prefecture in Japan was a marshy sand dune and had developed for agricultural land use with a large-scale sprinkler system. Recently, it becomes an agricultural problem at this area that distinctive damage with browning maculation and fissures frequently occurs in Chinese yam tubers. Acetaldehyde is one of the factor candidates of underground part damage in plants. In this study, incidence rate of the tuber damage, and the morphological character and elemental composition of the damage parts in tubers were investigated with applications of excessive irrigation water or acetaldehyde water solution into the yam field. The incidence rate of the distinctive tuber damage increased as the input amount of irrigation water was increased. At the browning maculation parts of the tubers, many fissures and damages of cork layer were observed under scanning electron microscopy. In addition, the periderm of tubers was significantly thicker in damaged parts than in non-damaged parts. Funguses, bacterium and nematodes were not observed in the damaged part under scanning electron microscopy. The weight ratio of each constituent element in an analyzed area relative to the total weight of major essential elements was measured with energy dispersive X-ray spectrometry. The results showed that the weight ratios of boron, carbon, phosphorus, sulfur and calcium were higher in damaged parts than in non-damaged parts whereas the weight ratios of oxygen and chlorine were lower in damaged parts than in non-damaged parts. It was also shown by this spectrometry that iron, cadmium, lead and zinc were not directly involved in occurrence of the tuber damage. In this study, there was no remarkable difference of tuber appearance between non-acetaldehyde and acetaldehyde application treatments. From the above results, it is shown that the damage would be a physiological disorder induced by the input of a large quantity of water in the sandy field.

• Nuclear Engineering and Technology
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• v.36 no.6
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• pp.528-539
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• 2004

It is essential in commercial reactors that the safety limits imposed on the fuel pellets and fuel clad barriers, such as the linear power density (LPD) and the departure from nucleate boiling ratio (DNBR), are not violated during reactor operations. In order to accurately monitor the safety limits of current reactor states, a detailed three-dimensional (3D) core power distribution should be estimated from the in-core detector signals. In this paper, we propose a calculation methodology for detailed 3D core power distribution, using in-core detector signals and core monitoring constants such as the 3D Coupling Coefficients (3DCC), node power fraction, and pin-to-node factors. Also, the calculation method for several core safety parameters is introduced. The core monitoring constants for the real core state are promptly provided by the core design code and on-line MASTER (Multi-purpose Analyzer for Static and Transient Effects of Reactors), coupled with the core monitoring program. through the plant computer, core state variables, which include reactor thermal power, control rod bank position, boron concentration, inlet moderator temperature, and flow rate, are supplied as input data for MASTER. MASTER performs the core calculation based on the neutron balance equation and generates several core monitoring constants corresponding to the real core state in addition to the expected core power distribution. The accuracy of the developed method is verified through a comparison with the current CECOR method. Because in all the verification calculation cases the proposed method shows a more conservative value than the best estimated value and a less conservative one than the current CECOR and COLSS methods, it is also confirmed that this method secures a greater operating margin through the simulation of the YGN-3 Cycle-1 core from the viewpoint of the power peaking factor for the LPD and the pseudo hot pin axial power distribution for the DNBR calculation.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.180-180
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• 2000

Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1$\times$1015 to 5$\times$1016 #/cm2. The as-implanted samples were annealed at 90$0^{\circ}C$, 95$0^{\circ}C$ and 100$0^{\circ}C$during various annealing time with rapid thermal process. After annealing, the sheet resistance and the junction depth were measured with four point probe and secondary ion mass spectroscopy, respectively. The doping uniformity was also investigated. In addition, the electrical characteristics were measured for Schottky diode with a current-voltage meter.

• Bulletin of the Korean Chemical Society
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• v.14 no.1
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• pp.113-117
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• 1993

Good yield synthetic routes for the production of new B-alkyl-dithiaborane clusters are reported. The syntheses of the B-alkyl-dithiaboranes are based on the use of Fischer-type carbene reagents to activate the B-H bonds of dithiaborane for alkyl-addition reactions and are the first examples of transition-mediated reactions of dithiaborane to be reported. Thus, reactions employing arachno-$S_2B_7H_8$- and $(CO)_5M{C(R_1)R_2}$ (M = Cr, W; $R_1 = CH_3,\;C_6H_5;\; R_2 = OCH_3,\;SC_6H_5)$ were found to yield the intermidiate anions I, $[(CO)_5M{C(R_1)R_2S_2B_7H_8}]^-$, which upon protonation gave the corresponding neutral, air-sensitive cluster arachno-4-$RCH_2-6,8-S_2B_7H_8(R=CH_3,\;IIa;\;C_6H_5,\;IIb)$ range from 30 to 35% yield. Complexes IIa and IIb are isoelectronic with arachno-6,8-$S_2B_7H_9$ and, on the basis of the spectroscopic data, are proposed to adopt a similar arachno cage geometry in which an $RCH_2$ units are substituted to 4 position boron atom of the arachno-6,8-$S_2B_7H_9$.

• Journal of the Korean Society of Radiology
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• v.15 no.2
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• pp.191-199
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• 2021

The purpose of this research is to analyze the radiation shielding effect of soft magnetic material to confirm the applicability to the military facilities. The soft magnetic material is known to be effective in shielding EMP. If this material is also effective in radiation shielding, it is expected that it has a lot of applicability in military protection. In particular, this material contains boron, so it will be effective in shielding neutrons. In this research, experiments were conducted using Cs-137 and Co-60 sources to check the gamma ray shielding effect. In addition, the Monte Carlo N-Particle(MCNP) modeling was applied to evaluate the gamma ray and neutron shielding effect of a military command tent. As a result, as the soft magnetic thickness increased, the shielding performance improved according the linear attenuation law of gamma ray and neutron. Therefore, this research verified that the application of soft magnetic material for military purposes in radiation shielding would be effective.

• Korean Chemical Engineering Research
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• v.56 no.6
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• pp.895-900
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• 2018

In this study, the electroless deposition of Co-B and Co-W-B alloy thin films was developed and the effect of B and W contents on the hardness of the alloy thin films were investigated. An amorphous Co alloy film was successfully formed by electroless deposition and the contents of B and W in the film were controlled by varying the concentrations of dimethylamine borane and sodium tungstate dihydrate, which were used as a reducing agent and W source, respectively. The hardness of the thin films increased as the contents of B and W were increased because B and W act as impurities suppressing the propagation of dislocation in a film. In addition, it was found that the content of B and W in the Co alloy films can be increased significantly when aeration is not performed. Finally, the hardness of Co-W-B alloy thin film was improved up to 8.9 (${\pm}0.3$) GPa.