• Applied Science and Convergence Technology
• /
• v.24 no.6
• /
• pp.268-272
• /
• 2015

We report the systematic study to reduce extrinsic doping in graphene grown by chemical vapor deposition (CVD). To investigate the effect of crystallinity of graphene on the extent of the extrinsic doping, graphene samples with different levels of crystal quality: poly-crystalline and single-crystalline graphene (PCG and SCG), are employed. The graphene suspended in air is almost undoped regardless of its crystallinity, whereas graphene placed on an $SiO_2/Si$ substrate is spontaneously p-doped. The extent of p-doping from the $SiO_2$ substrate in SCG is slightly lower than that in PCG, implying that the defects in graphene play roles in charge transfer. However, after annealing treatment, both PCG and SCG are heavily p-doped due to increased interaction with the underlying substrate. Extrinsic doping dramatically decreases after annealing treatment when PCG and SCG are placed on the top of hexagonal boron nitride (h-BN) substrate, confirming that h-BN is the ideal substrate for reducing extrinsic doping in CVD graphene.

• Korean Journal of Materials Research
• /
• v.16 no.1
• /
• pp.50-57
• /
• 2006

Phase mixtures of Titanium boride, nitride, and carbide powder were produced by the reduction of a mixture of titanium and boron oxides with carbon via a gas-solid phase reaction. Boron oxides produce a vapour phase or decompose to a metal sub-oxide gaseous species when reduced at elevated temperature. The mechanism of BO sub-oxide gas formation from $B_2O_3$ and its subsequent reduction to titanium diboride for the production of uniform size hexagonal platelets is explained. These gaseous phases are critical for the formation of boride, nitride and carbide ceramics. For the production of ceramic phase composite microstructures, the nitrogen partial pressure was the most critical factor. Some calculated equilibrium phase fields has been verified experimentally. The theoretical approach therefore identifies conditions for the formation of phase mixtures. The thermodynamic and kinetic factors that govern the phase constituents are also discussed.

• Journal of the Optical Society of Korea
• /
• v.19 no.5
• /
• pp.503-507
• /
• 2015

Using the reflectivity mode of an optical microscope, we analyzed the optical contrast to identify the layer number of flakes of hexagonal boron nitride on a $SiO_2$/Si substrate. Overall optical contrast in the visible range varies with the thickness of flakes. However, the wavelength of zero contrast exhibits a linear redshift of 0.53 nm per layer, independent of the $SiO_2$ thickness, and increases proportionally with $SiO_2$thickness. Experiments show good agreement with calculations and the results of AFM measurements. These results show that this zero-contrast approach is more accurate and easier than the reflectivity-contrast approach using the overall optical contrast.

• Journal of Korea Foundry Society
• /
• v.31 no.5
• /
• pp.267-273
• /
• 2011

Erosion and thermal shock resistance of several refractory materials have been investigated, which are expected to be used as nozzles in a planar flow casting equipment for amorphous alloys. The test was conducted on five materials; graphite, boron nitride, fused silica, alumina and zirconia. Test specimens were preheated and dipped into the melt of carbon steel and amorphous alloys. Some test specimens were rotated to develop high erosion and to shorten the test periods. Fused silica and boron nitride specimens showed the excellent erosion and thermal shock resistance irrespective of the kind of melt and melting atmosphere.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2004.05a
• /
• pp.59-62
• /
• 2004

The defect formation energy of boron nitride (BN) nanotubes is investigated using molecular-dynamics simulation. Although the defect with tetragon-octagon pairs (4-88-4) is favored in the flat cap of BN nanotubes, BN clusters, and the growth of BN nanotubes, the formation energy of the 4-88-4 defect is significantly higher than that of the pentagon-heptagon pairs (5-77-5) defect in BN nanotubes. The 5-77-5 defect reduces the effect of the structural distortion caused by the 4-88-4 defect, in spite of homoelemental bonds. The instability of the 4-88-4 defect generates the structural transformation into BNNTs with no defect at about 1500 K.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2003.10a
• /
• pp.52-52
• /
• 2003

cubic boron nitride(cubic BN)는 기계적, 전기적, 광학적, 열적으로 우수한 특성 때문에 다양한 분야에 응용 가능한 재료로, 수 십년 동안 연구되어 오고 있다. 그러나 아직까지 막내 cubic BN이 차지하는 함량과 접착력의 저조 때문에 실제로 응용되기에는 무리가 있다. 많은 이들이 이 문제점들을 해결하기 위해 노력하고 있다. Cubic BN의 생성 매카니즘에 관해서는 여러 모델들이 제시되고 있으나 아직까지 정론화된 것은 없다. 대표적인 모델들로는 스퍼터 모델, 스트레스 모델, 서브플렌테이션 모델 등이 있다. 그러나 BN 막내의 구조가 hexagal BN과 cubic BN이 혼합되어 있는 구조라는 것과 cubic BN이 형성되기 위해서는 이온 충돌 에너지가 필요하다는 점은 모든 모델들에서 일반적으로 취하고 있다. 본 연구에서는, 유도 결합 플라즈마 화학 기상 증착법을 이용해 cubic BN 박막을 증착하였다. 소스 가스로는 BCl$_3$, $N_2$, H$_2$, Ar를 사용하였다. 기판에 가해지는 R.F. 바이어스가 박막내 cubic BN의 함량에 어떠한 영향을 미치는 지에 대해 연구하였다. cubic BN 상의 확인은 FT-IR 장비로 분석하였고, 막내 조성은 AES로, 박막의 두께는 FE-SEM으로 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.305-305
• /
• 2007

고경도 및 내침식재료가 새로운 기계구조 및 기계 절삭공구재료로서 각광을 받고 있으며 질화붕소(BN)는 고융점, 고경도의 물리적 특성으로 다이아몬드 대체 물질로 주목되고 있다. 원하는 질화붕소의 합성을 위해서는 출발 원료와 합성법에 의존하는 것으로 보고되고 있다. 본 연구에서는 붕소 산화물과 환원제로써 활성 탄소를 출발 원료로 하였으며 치환제로써 질소를 사용하여 기상 반응로에서 질화붕소를 합성하였다. 합성된 시료는 XRD, SEM, PSA 등으로 물성을 측정하였고 합성 변수에 따라 순도의 차이를 보였으며, 본 연구를 통하여 최적의 합성 조건을 제시할 수 있었다.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.61 no.1
• /
• pp.89-93
• /
• 2012

c-BN films were deposited on SKH-51 steels by electron assisted hot filament CVD method and microstructure development was studied processing parameters such as bias voltage, temperature, etching and phase transformation at boundary layer between BN compound and steel to develop a high performance wear resistance tools. A negative bias voltage higher than 200V at substrate temperature of $800^{\circ}C$ and gas pressure of 20 torr in B2H6-NH3-H2 gas system was one of optimum conditions to produce c-BN films on the SKH-51 steels. Thin layer of hexagonal boron nitride phase was observed at the interface between c-BN layer and substrate.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.252.1-252.1
• /
• 2013

Hexagonal boron nitride (h-BN) is a two dimensional material which has high band-gap, flatness and inert properties. This properties are used various applications such as dielectric for electronic device, protective coating and ultra violet emitter so on. 1) In this report, we were growing h-BN sheet directly on sapphire 2"wafer. Ammonia borane (H3BNH3) and nickel were deposited on sapphire wafer by evaporate method. We used nickel film as a sub catalyst to make h-BN sheet growth. 2) During annealing process, ammonia borane moved to sapphire surface through the nickel grain boundary. 3) Synthesized h-BN sheet was confirmed by raman spectroscopy (FWHM: ~30cm-1) and layered structure was defined by cross TEM (~10 layer). Also we controlled number of layer by using of different nickel and ammonia borane thickness. This nickel film supported h-BN growth method may propose fully and directly growing on sapphire. And using deposited ammonia borane and nickel films is scalable and controllable the thickness for h-BN layer number controlling.

• Bulletin of the Korean Chemical Society
• /
• v.19 no.2
• /
• pp.222-226
• /
• 1998

Borazine (B3N3H6) as an inorganic analogue of benzene was synthesized by reaction of cheap raw materials (NaBH4 and (NH4)2SO4), and by using simple glass reaction apparatus in a scale up to 20 g per run with highly improved yield over 50%. It appears that synthesis of borazine is competing with formation of poly(aminoborane) as an inorganic analogue of polyethylene. The synthesized borazine and its polymerized product were characterized by comparison with products obtained from a commercial one. Bulk pyrolysis of the borazine polymer to 1500 ℃ produced a pure boron nitride (BN) with 75% ceramic yield, which displayed good oxidation resistance under dry air.