• 전력전자학회논문지
• /
• 제13권2호
• /
• pp.135-144
• /
• 2008

일반적으로 Intelligent power module (IPM)의 상부 스위치 구동을 위한 플로팅 전원 공급 방법으로 부트스트랩 회로가 많이 사용되고 있다. 부트스트랩 회로는 구성이 간단하고 집적화가 가능하다는 장점이 있으나 몇 가지 문제점을 가지고 있다. 상부 스위치 게이트 드라이버 회로에 전원을 공급하기 위해 매 주기마다 충분한 에너지를 충전할 수 있는 시간이 요구되며, 충전된 에너지는 한정적이므로 스위치 턴 온 (turn-on)시간의 제한을 갖게 된다. 그리고 주파수가 낮아질수록 부트스트랩 커패시터 용량이 증가하여 집적화에 장애요인이 된다. 이러한 단점은 전하 펌프 회로를 사용함으로써 보완될 수 있다. 본 논문에서는 IPM의 플로팅 전원 공급 방법으로 전하 펌프 회로를 적용하여 분석하였으며, 이러한 분석을 기반으로 전하 펌프 회로의 설계 방법을 제안하였다. 분석과 제안된 설계 방법의 타당성을 검증하기 위하여 시뮬레이션과 실험을 수행하였으며, 제시된 결과는 제안된 설계 방법의 유용성을 입증하였다.

• Journal of Power Electronics
• /
• 제7권4호
• /
• pp.294-300
• /
• 2007

This paper deals with a design of a bootstrap power supply using snubber energy regeneration, which is used to power a high-side gate driver of a half-bridge circuit. In the proposed circuit, the energy stored in the low-side snubber capacitor is transferred to the high-side bootstrap capacitor without any magnetic components. Thus, the power dissipation in the RCD snubber can be effectively reduced. The operation principle and design method of the proposed circuit are presented. The experimental results are also provided to show the validity of the proposed circuit.

• 전력전자학회논문지
• /
• 제19권4호
• /
• pp.376-382
• /
• 2014

This paper proposes the pulse width modulation (PWM) control strategy for low-speed operation in the three-level neutral-point-clamped (NPC) inverters based on the bootstrap gate drive circuit. As a purpose of the cost reduction, several papers have paid attention to the bootstrap circuit applied to the three-level NPC inverter. However, the bootstrap gate driver IC cannot generate the gate signal to the IGBT for low-speed operation, because the bootstrap capacitor voltage decreases under the threshold level. For low-speed operation, the dipolar and partial-dipolar modulations can be the effective solution. However, these modulations have drawbacks in terms of the switching loss and THD. Therefore, this paper proposes the PWM control strategy to operate the inverter at low-speed and to minimize the switching loss and harmonics. The experimental results are presented to verify the validity on the proposed method.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2005년도 전력전자학술대회 논문집
• /
• pp.421-423
• /
• 2005

A bootstrap circuit for floating power supply has the advantage of being simple and inexpensive. However, the duty cycle and on-time are limited by the requirement to refresh the charge in the bootstrap capacitor. Hence, this paper deals with a design of charge pump circuit for a floating gate power supply of an IPM. The operation of the proposed circuit applied by three-phase inverter system for driving induction motor are verified through the experiments.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
• /
• pp.545-548
• /
• 2004

The paper describes the design of high-speed, high-resolution Sample-and-Hold circuit which shows the conversion rate 80MHz and the power supply of 3.3v with 0.35um CMOS 2-poly 4-metal process for high-speed, high resolution Analog-to-Digital Converter. For improving Dynamic performance of Sample-and-Hold, Two Double bootstrap switch and high performance operational amplifier with gain booster, which are used. and For physical stability of Sample and Hold circuit, reduces excess voltage of gate in bootstrap switch. Simulation results using HSPICE shows the SFDR of 71dB, 75dB in conversion rate of 80MHz result for two inputs(0.5Vpp, 10MHz and 1Vpp, 10MHz) and the power dissipation of 48mW at single 3.3V supply voltage.

• 한국전기전자재료학회논문지
• /
• 제22권7호
• /
• pp.580-583
• /
• 2009

This paper introduces a gate drive IC for power modules with shoot-through immunity. A new approach uses a bootstrap diode as a high-side voltage bias and a level shift function at the same time. Therefore, the gate drive circuit becomes a simple and low-cost without conventional level shift functions such as HVIC(High-Voltage IC), optocoupler and transformer. The proposed gate drive IC is designed and fabricated using the Dongbu-Hitek's 0.35um BD350BA process. It has been tested and verified with IGBT modules.

• 한국전기전자재료학회논문지
• /
• 제22권7호
• /
• pp.563-566
• /
• 2009

This paper presents a motor drive IC for automotive applications. The drive IC is dedicated to control and drive external MOSFETs which directly drive 3-phase motor with a high current. In case of driving high-side power switches, the bootstrap topology is widely used. however, it requires three bootstrap diode and three capacitor respectively. And it needs a minimum charging time to maintain high-side voltage. The motor drive IC uses a charge-pump circuit for all three high-side voltage with various protection schemes for automotive applications.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
• /
• pp.41-42
• /
• 2009

This paper presents a motor drive IC for automotive applications. The drive IC is dedicated to control and drive external MOSFETs which directly drive 3-phase motor with a high current. In case of driving high-side power switches, the bootstrap topology is widely used. However, it requires three bootstrap diode and three capacitor respectively. And it needs a minimum charging time to maintain high-side voltage. The motor drive IC uses a charge-pump circuit for all three high-side voltage with various protection schemes for automotive applications.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
• /
• pp.81-82
• /
• 2009

This paper introduces a gate drive IC for power modules with shoot-through immunity. A new approach uses a bootstrap diode as a high-side voltage bias and a level shift function at the same time. Therefore, the gate drive circuit becomes a simple and low-cost without conventional level shift functions such as HVIC(High-Voltage IC), optocoupler and transformer. The proposed gate drive IC is designed and fabricated using the Dongbu-Hitek's 0.35um BD350BA process. It has been tested and verified with IGBT modules.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2014년도 전력전자학술대회 논문집
• /
• pp.510-511
• /
• 2014

본 논문에서는 3-레벨 T-type 인버터에 적용 가능한 저가형 게이트 드라이버 회로를 설계하였다. 게이트 드라이버 회로는 구조가 간단하고 가격 대비 효율적인 부트스트랩 회로가 적용되었다. 3-레벨 NPC 인버터와 비교했을때 T-type 인버터는 구조적 특징으로 인해 NPC 인버터와는 다른 게이트 드라이브 회로가 필요하다. 그러므로 본 논문에서는 T-type 인버터에 적용되는 부트스트랩 게이트 드라이버 회로를 설계하였으며 안정적인 회로 동작을 위한 부트스트랩 캐패시터의 용량 선정식을 제안하였다. 설계한 게이트 드라이버 회로는 시뮬레이션을 통해 검증하였다.