• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.430-433
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• 2005

Laser bonding between similar and dissimilar thermoplastics has been investigated by making use of laser transmission weld technique. Spot welding of two layers of plastic materials has been demonstrated by using of a high-quality diode-laser with 808nm wavelength. Weld areas increases according to power density, exposure time. The results of peel out test show that peel strengths increase with the area of molten plastics. Layers, which have the same chemical properties, have good bonding qualities. A bonding method which dye film is coated on the interface is used for laser bonding between plastics with high transmission for laser wavelength. Laser transmission bonding is worthy of attention because it is not in contact, requires a few tooling devices, allows a flexible energy delivery and produces nearly invisible welds

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.828-831
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• 2001

A simple and versatile method of manufacturing semiconductor devices with pn-junctions used the silicon direct bonding technology with simultaneous impurity diffusion is suggested . Formation of p- or n- type layers was tried during the bonding procedure by attaching two wafers in the aqueous solutions of Al(NO$_3$)$_3$, Ga(NO$_3$)$_3$, HBO$_3$, or H$_3$PO$_4$. An essential improvement of bonding interface structural quality was detected and a model for the explanation is suggested. Diode, Dynistor, and BGGTO structures were fabricated and examined. Their switching characteristics are presented.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.140-151
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• 1996

In this paper, we analyze the variations of thermal characteristics of LD (laser diode) arrays packaged by a flip-chip bonding method. When we simulate the temperature distribution in LD arrays with a BEM (boundary element method) program coded in this paper, we find that thermal crosstalks in LD arrays packaged by the flip-chip bonding method increases by 250-340% compared to that in LD arrays packaged by previous methods. In the LD array module packaged by the flip-chip bonding technique without TEC (thermo-electric cooler), the important parameter is the absolute temperature of the active layer increased due cooler), the important parameter is the absolute temperature of th eactiv elayers of LD arrays to thermal crosstalk. And we find that the temperature of the active layers of LD arrays increases up to 125$^{\circ}C$ whenall four LDs, without a carefully designed heatsink, are turned on, assuming the power consumption of 100mW from each LD. In order to reduce thermal crosstalk we propose a heatsink sturcture which can decrease the temeprature at the active layer by 40%.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.5
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• pp.629-635
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• 2014

This paper describes propagation characteristics obtained by considering semiconducting screen and cross-bonding in underground transmission cables. The semiconducting screen of power cable has effect on propagation characteristics including attenuation, velocity and surge impedance. However, it is very difficult to apply the semiconduction screen for EMTP model because of the number of conductors limitation. Therefore, CIGRE WG 21-05 proposed advanced insulation structure and analysis technique of simplified approach including inner and outer semiconducting screen. In this paper, the various propagation characteristics analyse using this structure and technique for 154kV XLPE $2000mm^2$ cable. The frequency independent model of EMTP CABLE PARAMETER is used for just pattern analysis of propagation characteristics. For exact data analysis, the frequency dependent model of J-marti is used for EMTP modeling. From these result, various propagation characteristics of 154kV XLPE $2000mm^2$ cable according to semi conducting screen consideration, frequency range, cable length and pulse width are analysed. In addition, in this paper, the effects of cross-bonding are also variously discussed according to cross-bonding methods, direct connection and impedance of lead cable.

• Journal of the korean academy of Pediatric Dentistry
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• v.44 no.3
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• pp.358-364
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• 2017

For the purpose of convenience and reducing time, newer bonding agents have been developed for composite resin restoration. Recently developed one bottle bonding system including etching, primer and adhesive can make procedures simpler and less technique-sensitive than old generation adhesives. The aim of this study was comparing the shear bond strength of new dentin bonding agents to the 5th generation bonding agent which had an etching step. 78 premolar teeth were randomly divided into three groups which were treated with $Tetric^{(R)}$ N-Bond Universal (Ivoclar Vivadent, Liechtenstein), $GC^{(R)}$ G-Premio BOND (GC Co., Japan) without additional etching step and $3M^{TM}$ Single Bond2 (3M ESPE, USA) with an etching step following manufacturer's instructions. $Filtek^{TM}$ Z-350 (3M ESPE, USA) composite resin was applied and light cured over bonding agents. For shear bond strength evaluation, universal testing machine was used with a wedge technique. As a result, shear bond strength of one step bonding agents was lower than two step bonding agent and there were statistically significant differences between them (p < 0.05). In addition, within the result of two new bonding agents, $Tetric^{(R)}$ N-Bond Universal showed significantly higher shear bond strength than $GC^{(R)}$ G-Premio BOND (p < 0.05).

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1946-1949
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• 1996

We have performed silicon-to-silicon anodic bonding using glass layer deposited by electron beam evaporation. Wafers can be bonded at $135^{\circ}C$ with an applied voltage of $35V_{DC}$, which enables application of this technique to the vacuum packaging of microelectronic devices, because its bonding temperature and voltage are low. From the experimental results, we have found that the evaporated glass layer more than $1\;{\mu}$ m thick was suitable for anodic bonding. The role of sodium ions for anodic bonding was also investigated by theoretical bonding mechanism and experimental inspection.

• Restorative Dentistry and Endodontics
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• v.18 no.2
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• pp.423-430
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• 1993

The purpose of this study was to investigate the effect of ferric and ferric ions contained in phosphoric acid solution as a pretreatment solution on bonding of MMA/TBBO resin to dentin. Each of 1 % and 3 % ferric chloride. cupric chloride. cupric sulfate. and cupric nitrate was mixed into 10% phosphoric acid solution and pretreated dentin surface of bovine anterior teeth for 30 seconds followed- by water rinse and dry. Tensile bond strength was determined after bonding of pretreated dentin with MMA/TBBO resin by use of brush-on ;technique and storing for 24 hours in 3it distilled water. The amount of cupric ions adsorbed on pretreated dentin surface was detected by Wave-Dispersion X-ray microanalyzer for different groups of each pretreatment solution containing cupric salts. The pretreatment with cupric ions contained in 10% phosphoric acid solution was effective to increase bonding strength of MMA/TBBO resin to dentin but not in case of ferric ions. The pretreatment with 3 % cupric chloride and cupric nitrate both enhanced significant increase in bonding strength compared to the control group of 10% phosphoric acid solution(p<0.05). Cupric ions measured in pretreated dentin surface was higher in 3 % cupric chloride group than in 1% cupric chloride group, but couldn't find distinct relationship from the results of this experiment between the amount of adsorbed cupric ions according to the kind of cupric salts and the bonding strength value.

• Journal of Technologic Dentistry
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• v.39 no.3
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• pp.153-159
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• 2017

Purpose: In this study, a corresponding porcelain coating material was applied to dental Co-Cr metal among PFM. Methods: The bonding strength of the fired specimens was measured by a three-point flexural rigidity test. SEM/EDS was used to observe the surface component of specimens. Results: First, All groups were higher than the minimum bonding strength of 25 MPa specified in ISO 9693 for dental metal-ceramics specimens. Second, The bonding strength of control group(WO) is 44.64 MPa. Experimental group DM was 35.45 MPa and DP was 31.82 MPa(P<0.05). Tukey's HSD tests results have shown that the bonding strength in control group(WO) is higher than that of experimental group(DM, DP). Third, In the case of metal - porcelain bonding strength, the application of opaque porcelain and firing were higher than those of the group treated with degassing process. Conclusion: The bonding strength was higher when the powder opaque porcelain was applied than the paste opaque porcelain.

• Current Photovoltaic Research
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• v.3 no.1
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• pp.1-4
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• 2015

In this study, we analyzed the correlation between mechanical and electrical properties of low-temperature conductive film (LT-CF) bonded silicon solar cells by a quadrant analysis (horizontal axis (peeling strength), vertical axis (power loss)). We found that a series of points with various bonding parameters such as bonding temperature, pressure and time were distributed in the different three regimes; weak regime (Q2: weak bonding strength and high power loss), moderate regime (Q4 : strong bonding strength and low power loss) and hard regime (Q3 : weak bonding strength and low power loss). Using this analogous technique, it was possible to fabricate the LT-CF bonded silicon solar cells with the various conditions displayed in Q3 of the quadrant plots, possessing the peeling strength of ~ 1N/mm and power loss of 2~3%.

• Journal of the Korean Society for Precision Engineering
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• v.32 no.9
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• pp.799-805
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• 2015

The further development of information, communication and digital media technologies requires the use of advanced, miniaturized semiconductor chips that operate at a high frequency. Die bonding and wire bonding methods for semiconductor packaging have been replaced by direct attachment to the substrate after forming a bump on the chip. However, the height of the bump or ball is an important factor for defects during assembly. This paper proposes an algorithm to measure the height of the bumps or balls in semiconductor packaging with greater accuracy. The performance of the proposed algorithm is experimentally validated. Non-contact 3D measurements of a shiny round ball is quite difficult, and it is not easy to obtain accurate data. This paper thus proposes an optical method and technique to improve the measurement accuracy.