• Title/Summary/Keyword: Bonding Quality

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A Study on the Diffusion Bonding of Mg-Ni under Low Eutectic Temperature (최소 공정온도하에서 Mg-Ni의 열확산 접합에 관한 연구)

  • Jin, Yeung Jun
    • Journal of the Korean Society of Safety
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    • v.32 no.1
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    • pp.9-14
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    • 2017
  • Diffusion bonding is a technique that has the ability to join materials with minimum change in joint micro-structure and deformation of the component. The quality of the joints produced was examined by metallurgical characterization and the joint micro-structure developed across the diffusion bonding was related to changes in mechanical properties as a function of the bonding time. An increase in bonding time also resulted in an increase in the micro-hardness of the joint interface from 55 VHN to 180 VHN, The increase in hardness was attributed to the formation of intermetallic compounds which increased in concentration as bonding time increased.

Study on a New ACF Bonding Methods in LCD Module Using a High Power Diode Laser (다이오드레이저를 이용한 디스플레이 모듈 내 이방성 전도 필름(ACF) 접합 기술에 관한 연구)

  • Ryu K. H.;Seon M. H.;Nam G. J.;Kwak N. H.
    • Laser Solutions
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    • v.8 no.3
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    • pp.21-26
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    • 2005
  • A bonding process between tape-carrier package and a glass panel with anisotropic conductive film (ACF) has been investigated by making use of high power diode laser as a heat source for cure. The results from modeling of process and from optical properties of layers showed that heat absorbed from polyimide film surface and ACF layer is dominant source of curing during laser illumination. Laser ACF bonding has better bonding quality than conventional bonding in view of peel strength, flatness, pressure unbalance and processing time. New ACF bonding processes by making use of high power diode laser are proposed.

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A Study on Bondability of Electronic Materials by Different Heat Sources (열원 형태에 의한 전자재료의 접합성에 관한 연구 I)

  • Shin, Young-Eui;Yang, Hyub;Kim, Kyung-Sub
    • Journal of Welding and Joining
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    • v.12 no.4
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    • pp.110-116
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    • 1994
  • This paper has been researched bondability of electronics devices, such as lead frame and the thick film of Ag/Pd on an alumina substrate by different heat sources. To obtain the bonds with high quality, it is very important to consist of different materials. Therefore, this paper clarifies not only heat mechanism of micro parallel gap resistance bonding method and pulse heat tip bonding method but also investigates selection of heat sources with micro-electronic materials for bonding. Finally, it is realized fluxless bonding process with filler metal such as plating layers.

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Analysis of Transmission Infrared Laser Bonding for Micro Polymer Devices (폴리머 마이크로 칩에 대한 레이저 투과 마이크로 접합)

  • Kim, Ju-Han;Sin, Gi-Hun
    • Proceedings of the KWS Conference
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    • 2005.06a
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    • pp.43-45
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    • 2005
  • A precise bonding technique, transmission laser bonding using energy transfer, for polymer micro devices is presented. The irradiated IR laser beam passes through the transparent part and absorbed on the opaque part. The absorbed energy is converted to heat and bonding takes place. In order to optimize the bonding quality, the temperature profile on the interface must be obtained. Using optical measurements of the both plates, the absorbed energy can be calculated and heat transfer model was applied for obtaining the transient temperature profile. The transmission laser bonding has a potential in the local precise bonding in MEMS or Lab-on-a-chip.

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Low Temperature Bonding Process of Silicon and Glass using Spin-on Glass (Spin-on Glass를 이용한 실리콘과 유리의 저온 접합 공정)

  • Lee Jae-Hak;Yoo Choong-Don
    • Journal of Welding and Joining
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    • v.23 no.6
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    • pp.77-86
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    • 2005
  • Low temperature bonding of the silicon and glass using the Spin-on Glass (SOG) has been conducted experimentally to figure out the effects of the SOG solution composition and process variables on bond strength using the Design of Experiment method. In order to achieve the high quality bond interface without rack, sufficient reaction time of the optimal SOG solution composition is needed along with proper pressure and annealing temperature. The shear strength under the optimal SOG solution composition and process condition was higher than that of conventional anodic bonding and similar to that of wafer direct bonding.

Bonding evolution of bimetallic Al/Cu laminates fabricated by asymmetric roll bonding

  • Vini, Mohamad Heydari;Daneshmand, Saeed
    • Advances in materials Research
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    • v.8 no.1
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    • pp.1-10
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    • 2019
  • Roll bonding (RB) process of bi-metal laminates as a new noble method of bonding has been widely used in the production of bimetal laminates. In the present study, asymmetric roll bonding process as a new noble method has been presented to produce Al/Cu bimetallic laminates with the thickness reduction ratios 10%, 20% and 30% together with mismatch rolling diameter ($\frac{R_2}{R_1}$) ratio 1:1, 1:1.1 and 1:1.2. ABAQUS as a finite element simulation software was used to model the deformation of samples. The main attention in this study focuses on the bonding properties of Al/Cu samples. The effect of the $\frac{R_2}{R_1}$ ratios was investigated to improve the bond strength. During the simulation, for samples produced with $\frac{R_2}{R_1}=1:1.2$, the vertical plastic strain of samples was reach the maximum value with a high quality bond. Moreover, the peeling surface of samples after the peeling test was investigated by the scanning electron microscopy (SEM).

An Experimental study on the Effect of Bonding Conditions on Bonding Strength of Ceramic Tiles: Substrate, Setting Material and Curing Condition (도기질 타일 부착조건(바탕면, 붙임재료 및 양생조건)이 부착강도에 미치는 영향에 관한 실험적 평가)

  • Ki, Jun-Do;Lee, Sang-Hyun;Cho, Hong-Bum;Kim, Young-Sun;Kwak, Dong-Young
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2020.11a
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    • pp.153-154
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    • 2020
  • This study aims to find out the reason that tile adhesive(type III) for ceramic tile does not harden under some conditions especially high humidity even though long curing time. Bonding strength of adhesive between substrate and ceramic tile is evaluated depending on bonding conditions such as substrate kind(concrete, board), bonding material (tile adhesive, tile cement) and curing condition(humidity 50, 70%). Based on the results, this study aimed to establish the quality of tile adhesion strength under the relevant conditions.

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Ultrasonic Test Criterion for the Explosively Welded Fe-Naval Brass Bonding Quality (초음파법에 의한 폭발접합 이종금속 접합품질 판정레벨 설정에 관한 연구)

  • 장영권;백영남
    • Journal of Welding and Joining
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    • v.19 no.1
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    • pp.40-48
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    • 2001
  • An ultrasonic test method, as a nondestructive test is applied to ensure the clad interface quality assessment. According to the reference codes and standards, not only korea Industrial Standard(KS) but also American Society for Testing and Materials (ASTM) Standard, ultrasonic examination procedures use the pulse-echo, A-scan, back reflection signal drop method and/or side drilled reference hole used to establish the acceptance criteria of clad material test. But the variety of bonding materials and sizes makes it difficult to produce the reference blocks, or thus the criteria. In order to overcome these practical difficulties, new ultrasonic testing criterion is suggested. In this new method, the theoretical interface reflection signal amplitude level is calculated and suggested as an acceptance criteria with the back reflection signal set to 100% FSH(Full Screen Height) which is based on acoustic impedance mismatch at the clad interface for the explosive clad ultrasonic inspection. Applicability of suggested criterion, for the explosive clad Fe-Naval Brass with different bonding quality is confirmed to the pre-existed KS and ASTM specifications and verified by using SEM (Seanning Electron Microscope) micrograph. The results obtained by the suggested method is more conservative than the results according to the KS B 0234 and ASTM A 578 specifications The suggested method could be applicable to any other combination of explosive clad ultrasonic inspection.

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Fabrication and Challenges of Cu-to-Cu Wafer Bonding

  • Kang, Sung-Geun;Lee, Ji-Eun;Kim, Eun-Sol;Lim, Na-Eun;Kim, Soo-Hyung;Kim, Sung-Dong;Kim, Sarah Eun-Kyung
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.2
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    • pp.29-33
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    • 2012
  • The demand for 3D wafer level integration has been increasing significantly. Although many technical challenges of wafer stacking are still remaining, wafer stacking is a key technology for 3D integration due to a high volume manufacturing, smaller package size, low cost, and no need for known good die. Among several new process techniques Cu-to-Cu wafer bonding is the key process to be optimized for the high density and high performance IC manufacturing. In this study two main challenges for Cu-to-Cu wafer bonding were evaluated: misalignment and bond quality of bonded wafers. It is demonstrated that the misalignment in a bonded wafer was mainly due to a physical movement of spacer removal step and the bond quality was significantly dependent on Cu bump dishing and oxide erosion by Cu CMP.

Effect of Processing Conditions on the Morphological Structure and Strength Properties of Ultrasonically Laminated Nonwovens (초음파 라미네이트 부직포의 형태구조와 강도특성에 처리조건의 영향)

  • Kang, Jeon-Young;Jeon, Woo-Jin;Joo, Chang-Whan
    • Proceedings of the Korean Fiber Society Conference
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    • 2003.04a
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    • pp.146-149
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    • 2003
  • There are three major bonding types such as chemical bonding, thermal bonding, mechanical bonding to produce nonwoven fabrics. The development of the past few years has shown that the share of thermally bonded webs is growing steadily. The viability of the thermal bonding process is rooted in the price advantage obtained by lower energy costs. However, the thermal bonding process also obtains the quality requirements of the market place. (omitted)

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