• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.14 no.2
• /
• pp.25-30
• /
• 2015

This study involved the fabrication of precision machine tools using a polycrystalline diamond tip [sintered PCD and cemented carbide (WC-Co) tip] and WC-Co shanks via diffusion bonding with a paste-type nickel alloy filler metal. Diffusion bonding is a process whereby two materials are pressed together at high temperature and high pressure for a sufficient period of time to allow significant atomic diffusion to occur. For smooth progress, a filler metal of nickel alloy was used at the interface. Optical microscopy images were used to observe the copula of the bonded layer. It was confirmed that cracks occurred near the junction in all cases. The tensile strength of the bond was measured using a universal testing machine (UTM) with WC-Co proportional test specimens.

• Composites Research
• /
• v.26 no.4
• /
• pp.235-244
• /
• 2013

A volume integral equation method (VIEM) is introduced for the solution of elastostatic problems in an unbounded isotropic elastic solid containing multiple isotropic elliptical fibers of arbitrary orientation subject to uniform stress at infinity. The fibers are assumed to be long parallel elliptical cylinders composed of isotropic elastic material perfectly bonded to the isotropic matrix. The solid is assumed to be under plane strain on the plane normal to the cylinders. A detailed analysis of the stress field at the matrix-fiber interface for square and hexagonal packing of the fibers is carried out for different values of the number, orientation angles and concentration of the elliptical fibers. The accuracy and efficiency of the method are examined through comparison with results obtained from analytical and finite element methods.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.109.1-109.1
• /
• 2015

Understanding the reaction mechanisms and structures underlying the adsorption of biomolecules on semiconductors is important for functionalizing semiconductor surfaces for various bioapplications. Herein, we describe the characteristic behavior of a primary nucleobase adsorbed on the semiconductor Ge(100). The adsorption configuration of guanine, a primary nucleobase found in DNA and RNA, on the semiconductor Ge(100) at an atomic level was investigated using scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. When adsorbed on Ge(100) at room temperature, guanine appears dark in STM images, indicating that the adsorption of guanine on Ge(100) occurs through N-H dissociation. In addition, DFT calculations revealed that "N(1)-H dissociation through an O dative bonded structure" is the most favorable adsorption configuration of all the possible ones. We anticipate that the characterization of guanine adsorbed on Ge(100) will contribute to the development of semiconductor-based biodevices.

• Journal of the Korean institute of surface engineering
• /
• v.33 no.2
• /
• pp.101-106
• /
• 2000

SOI (Silicon-On-Insulator) substrates were fabricated with varying annealing temperature of $25-660^{\circ}C$ by a linear annealing method, which was modified RTA process using a linear shape heat source. The annealing method was applied to Si ∥ $SiO_2$/Si pair pre-contacted at room temperature after wet cleaning process. The bonding strength of SOI substrates was measured by two methods of Razor-blade crack opening and direct tensile test. The fractured surfaces after direct tensile test were also investigated by the optical microscope as well as $\alpha$-STEP gauge. The interface bonding energy was 1140mJ/m$^2$ at the annealing temperature of $430^{\circ}C$. The fracture strength was about 21MPa at the temperature of $430^{\circ}C$. These mechanical properties were not reported with the conventional furnace annealing or rapid thermal annealing method at the temperature below $500^{\circ}C$. Our results imply that the bonded wafer pair could endure CMP (Chemo-Mechanical Polishing) or Lapping process without debonding, fracture or dopant redistribution.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.26 no.6
• /
• pp.1187-1193
• /
• 2002

Anodic bonding process has been quantitatively evaluated based on the Taguchi analysis of the interfacial fracture toughness, measured at the interface of anodically bonded silicon-glass bimorphs. A new test specimen with a pre-inserted blade has been devised for interfacial fracture toughness measurement. A set of 81 different anodic bonding conditions has been generated based on the three different conditions for four different process parameters of bonding load, bonding temperature, anodic voltage and voltage supply time. Taguchi method has been used to reduce the number of experiments required for the bonding strength evaluation, thus obtaining nine independent cases out of the 81 possible combinations. The interfacial fracture toughness has been measured for the nine cases in the range of 0.03∼6.12 J/㎡. Among the four process parameters, the bonding temperature causes the most dominant influence to the bonding strength with the influence factor of 67.7%. The influence factors of other process parameters, such as anodic voltage and voltage supply time, bonding load, are evaluated as 18%, 12% and 2.3%, respectively. The maximum bonding strength of 7.23 J/㎡ has been achieved at the bonding temperature of 460$\^{C}$ with the bonding load of 45gf/㎠, the applied voltage of 600v and the voltage supply time of 25minites.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.06a
• /
• pp.434-437
• /
• 2005

Chemical Mechanical Polishing (CMP) has become an essential step in the overall semiconductor wafer fabrication technology. In general, CMP is a surface planarization method in which a silicon wafer is rotated against a polishing pad in the presence of slurry under pressure. The polishing pad, generally a polyurethane-based material, consists of polymeric foam cell walls, which aid in removal of the reaction products at the wafer interface. It has been found that the material removal rate of any polishing pad decreases due to the so-called 'pad glazing' after several wafer lots have been processed. Therefore, the pad restoration and conditioning has become essential in CMP processes to keep the urethane polishing pad at the proper friction coefficient and to allow effective slurry transport to the wafer surface. Diamond pad conditioner employs a single layer of brazed bonded diamond crystals. Due to the corrosive nature of the polishing slurry required in low pH metal CMP such as copper, it is essential to minimize the possibility of chemical interaction between very low pH slurry (pH <2) and the bond alloy. In this paper, we report an exceptional protective coated conditioner for in-situ pad conditioning in low pH Cu CMP process. The protective Cr-coated conditioner has been tested in slurry with pH levels as low as 1.5 without bond degradation.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.24 no.6 s.177
• /
• pp.1456-1469
• /
• 2000

Mechanical behaviors of uniaxially fiber-reinforced metal matrix composites under transverse loading conditions were studied at room and elevated temperatures. A mono-filament composite was selecte d as a representative analysis model with perfectly bonded fiber/matrix interface assumption. The elastic-plastic and visco-plastic models were investigated by both theoretical and numerical methods. The product of triaxiality factor and effective strain as well as stress components and strain energy was obtained as a function of location to estimate the failure sites in fiber-reinforced metal matrix composite. Results showed that fiber/ matrix interfacial debond plays a key role for local failure at the room temperature, while void creation and growth in addition to the interfacial debond are major concerns at the elevated temperature. It was also shown that there would be an optimal diameter of fiber for the strong fiber-reinforced metal matrix composite.

• Structural Monitoring and Maintenance
• /
• v.7 no.3
• /
• pp.233-259
• /
• 2020

Using bonded fiber-reinforced polymer laminates for strengthening wooden structural members has been shown to be an effective and economical method. In this research, properties of suitable composite materials (sika wrap), adhesives and two ways of strengthening beams exposed to bending moment are presented. Passive or slack reinforcement is one way of strengthening. The most effective way of such a strengthening was to place reinforcement laminates in the stretched part of the wooden beam (lower part in our case), in order to investigate the effectiveness of externally bonding FRP to their soffits. The model is based on equilibrium and deformations compatibility requirements in and all parts of the strengthened beam, i.e., the wooden beam, the sika wrap composite plate and the adhesive layer. The theoretical predictions are compared with other existing solutions. This research is helpful for the understanding on mechanical behaviour of the interface and design of the composite-wooden hybrid structures. The results showed that the use of the new strengthening system enhances the performance of the wooden beam when compared with the traditional strengthening system.

• Korean Journal of Materials Research
• /
• v.5 no.2
• /
• pp.191-196
• /
• 1995

Self-bonding strength developed at the interface of amorphous PEEK films is highly sensitive to the processing variables(time, temperature, and pressure) during the bonding process. In order to examine the effects of these processing variables, amorphous PEEK films were bonded at various bonding conditions and the resultant interfacial bond strengths were measured using a modified single lap-shear test. Experimental results showed that the developed self-bonding strength increases with increase in bonding temperature and is directly proportional to the bonding time raised to the 1/4 power. The applied pressure seems only to produce better wetting at the beginning stage of the bonding process. Conclusively, the self-bonding of amorphous PEEK films provides a great potential for developing excellent bond strength approaching the strength of the parent material without any adhesives in structural applications.

• Journal of the Korean Ceramic Society
• /
• v.42 no.8 s.279
• /
• pp.537-541
• /
• 2005

Silicon nitride is one of the most successful engineering ceramics, owing to a favorable combination of properties, including high strength, high hardness, low thermal expansion coefficient, and high fracture toughness. However, the impact damage behavior of $Si_3N_4$ ceramics has not been widely characterized. In this study, sphere and explosive indentations were used to characterize the static and dynamic damage behavior of $Si_3N_4$ ceramics with different microstructures. Three grades of $Si_3N_4$ with different grain size and shape, fine-equiaxed, medium, and coarse-elongated, were prepared. In order to observe the subsurface damaged zone, a bonded-interface technique was adopted. Subsurface damage evolution of the specimens was then characterized extensively using optical and electron microscopy. It was found that the damage response depends strongly on the microstructure of the ceramics, particularly on the glassy grain boundary phase. In the case of static indentation, examination of subsurface damage revealed competition between brittle and ductile damage modes. In contrast to static indentation results, dynamic indentation induces a massive subsurface yield zone that contains severe micro-failures. In this study, it is suggested that the weak glassy grain boundary phase plays an important role in the resistance to dynamic fracture.