• 한국전자파학회논문지
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• 제25권4호
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• pp.487-490
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• 2014

본 논문은 와이어 본드와 도파관 전이 구조, 인쇄 회로 기판의 77 GHz 인터커넥트를 포함한 차량용 레이더의 프론트 엔드 모듈 설계를 제시한다.

• 전력전자학회논문지
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• 제27권3호
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• pp.206-213
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• 2022

This paper presents setting up a laboratory-scale testbed to estimate the aging of power MOSFET devices and integrated power modules by measuring its on-state voltage and current. Based on the aging mechanisms of the component inside the power module (e.g., bond-wire, solder layer, and semiconductor chip), a system to measure the on-state resistance of device-under-test (DUT) is designed and experimented: a full-bridge circuit applies current stress to DUT, and a temperature chamber controls the ambient temperature of DUT during the aging test. The on-state resistance of SiC MOSFET measured by the proposed testbed was increased by 2.5%-3% after 44-hour of the aging test.