• 제목/요약/키워드: Bolometer

검색결과 64건 처리시간 0.024초

고해상도 열영상 구현을 위한 마이크로 볼로미터의 픽셀 구조 및 특성 연구 (A Study on the Design of Thermal Isolation of Micro Bolometer Membrane for Thermal Image)

  • 남태진;이정훈;정은식;강태영;강이구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.200-200
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    • 2010
  • 열영상의 해상도 증가 시 야기되는 감도저하를 해결하고자 단위 픽셀의 크기를 줄이고 필팩터 향상을 위한 2앵커, 4앵커 구조를 제안하고 앵커 구조에서 Leg 구성물질의 두께변화에 따른 온도 변화 및 열전도도 특성을 실험을 통해 최적화 된 열영상을 구현한다.

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Effect of Sintering Temperature on the Dielectric Property of Lead Magnesium Niobate-Lead Titanate Ceramics

  • Hwang, Hak-In;Jung, Jong-Man;Park, Joon-Shik
    • The Korean Journal of Ceramics
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    • 제4권4호
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    • pp.286-291
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    • 1998
  • Dielectric properties of $Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_{3}$, ceramics prepared by the columbite precursor method have been investigated as a function of the sintering temperature in the range of 1000∼$1250^{\circ}C$. The $Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_{3}$ ceramics show typical relaxor ferroelectric behavior. As the sintering temperature increased, the dielectric constant increased and the phase transition temperature shifted to lower temperature. The TCK(temperature coefficient of dielectric constant) and VRK (variation rate of dielectric constant) increased with increasing sintering temperature. The $Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_{3}$ compositions sintered at $1250^{\circ}C$ appear to be suitable for ferroelectric bolometer.

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Cosmic Evolution of Submillimeter Galaxies and Their Effects on the Star Formation Rate Density

  • 김성은
    • 천문학회보
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    • 제38권1호
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    • pp.27-27
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    • 2013
  • Development of bolometer array and camera at millimeter and submillimeter wavelengths plays an important role for detecting submillimeter galaxies (SMGs) which appear to be very bright at the submillimeter and millimeter wavelengths. These SMGs, luminous infrared galaxies detected at mm/submm wavelengths seem to be progenitors of present-day massive galaxies and account for their considerable contributions to the light from the early universe and their expected high star formation rates (SFRs) if there is a close link between the SMG phenomena and the star formation activities and the interstellar dust in galaxies is mainly heated by the star light. In this talk, we review assembly of SMGs compiled with observations using the bolometer arrays and cameras and investigate their spectral energy distribution fits including the data at other wavelengths which trace the photometric properties and the red-shift distribution of galaxies. We find that these bright SMGs significantly contribute to the cosmic star formation rate density at red-shifts of 2-3 (about 8 %) for the spatial distribution of these galaxies.

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$16{\times}16$ 비정질 실리콘 볼로미터 설계 및 제작 (Design and Fabrication of the $16{\times}16$ Amorphous Silicon Microbolometer Array)

  • 강태영;임성수;곽용석;장원수;한영수;박영식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.373-374
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    • 2007
  • The amorphous silicon microbolometer array has been developed by the MEMS design and fabrication technology. Before the bolometer array for the image sensor being designed, the structure of unit cel I and 16x16 array of it was simulated, designed and fabricated. The properties of bolometer have been measured as such that the TCR and thermal time constant can be achieved -2 %/K and 1.4 msec respectively.

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MOD법으로 제조된 Copper Manganite 박막의 구조 및 NTCR 특성 (Micro-structure and NTCR Characteristics of Copper Manganite Thin Films Fabricated by MOD Process)

  • 이귀웅;전창준;정영훈;윤지선;남중희;조정호;백종후;윤종원
    • 한국전기전자재료학회논문지
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    • 제27권7호
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    • pp.452-457
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    • 2014
  • Copper manganite thin films were fabricated on $SiN_x/Si$ substrate by metal organic decomposition (MOD) process. They were burned-out at $400^{\circ}C$ and annealed at various temperatures ($400{\sim}800^{\circ}C$) for 1h in ambient atmosphere. Their micro-structure and negative temperature coefficient of resistance (NTCR) characteristics were analyzed for micro-bolometer application. The copper manganite film with a cubic spinel structure was well developed at $500^{\circ}C$ which confirmed by XRD and HRTEM analysis. It showed a low resistivity ($47.5{\Omega}{\cdot}cm$) at room temperature and high NTCR characteristics of $-4.12%/^{\circ}C$ and $-2.15%/^{\circ}C$ at room temperature and $85^{\circ}C$, implying a good thin film for micro-bolometer application. Furthermore, its crystallinity was enhanced with increasing temperature to $600^{\circ}C$. However, the appearance of secondary phase at temperatures higher than $600^{\circ}C$ lead to deteriorate the NTCR characteristics.

A Novel Test Structure for Process Control Monitor for Un-Cooled Bolometer Area Array Detector Technology

  • Saxena, R.S.;Bhan, R.K.;Jalwania, C.R.;Lomash, S.K.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권4호
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    • pp.299-312
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    • 2006
  • This paper presents the results of a novel test structure for process control monitor for uncooled IR detector technology of microbolometer arrays. The proposed test structure is based on resistive network configuration. The theoretical model for resistance of this network has been developed using 'Compensation' and 'Superposition' network theorems. The theoretical results of proposed resistive network have been verified by wired hardware testing as well as using an actual 16x16 networked bolometer array. The proposed structure uses simple two-level metal process and is easy to integrate with standard CMOS process line. The proposed structure can imitate the performance of actual fabricated version of area array closely and it uses only 32 pins instead of 512 using conventional method for a $16{\times}16$ array. Further, it has been demonstrated that the defective or faulty elements can be identified vividly using extraction matrix, whose values are quite similar(within the error of 0.1%), which verifies the algorithm in small variation case(${\sim}1%$ variation). For example, an element, intentionally damaged electrically, has been shown to have the difference magnitude much higher than rest of the elements(1.45 a.u. as compared to ${\sim}$ 0.25 a.u. of others), confirming that it is defective. Further, for the devices having non-uniformity ${\leq}$ 10%, both the actual non-uniformity and faults are predicted well. Finally, using our analysis, we have been able to grade(pass or fail) 60 actual devices based on quantitative estimation of non-uniformity ranging from < 5% to > 20%. Additionally, we have been able to identify the number of bad elements ranging from 0 to > 15 in above devices.

비냉각 적외선 센서 어레이를 위한 CMOS 신호 검출회로 (A CMOS Readout Circuit for Uncooled Micro-Bolometer Arrays)

  • 오태환;조영재;박희원;이승훈
    • 전자공학회논문지SC
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    • 제40권1호
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    • pp.19-29
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    • 2003
  • 본 논문에서는 기존의 방법과는 달리 4 단계의 보정 기법을 적용하여 미세한 적외선 (infrared : IR) 신호를 검출해내는 비냉각 적외선 센서 어레이를 위한 CMOS 신호 검출회로를 제안한다. 제안하는 신호 검출회로는 11 비트의 A/D 변환기 (analog-to digital converter : ADC)와 7 비트의 D/A 변환기(digital to-analog converter : DAC), 그리고 자동 이득 조절 회로 (automatic gain control circuit : AGC)로 구성되며, 비냉각 센서 어레이를 동작시키는 DC 바이어스 전류 성분, 화소간의 특성 차이에 의한 변화 성분과 자체 발열 (self-heating)에 의한 변화 성분을 포함하는 적외선 센서 어레이의 출력 신호로부터 미세한 적외선 신호 성분만을 선택적으로 얻어낸다. 제안하는 A/D 변환기에서는 병합 캐패시터 스위칭(merged-capacitor switching : MCS) 기법을 적용하여 면적 및 전력 소모를 최소화하였으며, D/A 변환기에서는 출력단에 높은 선형성을 가지는 전류 반복기를 사용하여 화소간의 특성 차이에 의한 변화 성분과 자체 발열에 의한 변화 성분을 보정할 수 있도록 하였다. 시제품으로 제작된 신호 검출회로는 1.2 um double-poly double-metal CMOS 공정을 사용하였으며, 4.5 V 전원전압에서 110 ㎽의 전력을 소모한다. 제작된 시제품으로부터 측정된 검출회로의 differential nonlinearity (DNL)와 integral nonlinearity (INL)는 A/D 변환기의 경우 11 비트의 해상도에서 ±0.9 LSB와 ±1.8 LSB이며, D/A 변환기의 경우 7비트의 해상도에서 ±0.1 LSB와 ±0.1 LSB이다.

Wide-Band Measurements of Antenna-Coupled Microbolometers for THz Imaging

  • Tamminen, Aleksi;Ala-Laurinaho, Juha;Mallat, Juha;Luukanen, Arttu;Grossman, Erich N.;Raisanen, Antti V.
    • Journal of electromagnetic engineering and science
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    • 제10권3호
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    • pp.132-137
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    • 2010
  • We present results of room-temperature characterization of lithographically manufactured antenna-coupled NbN micro-bolometers. The bolometers are assembled together with a hyper-hemispherical Si lens to couple the incident radiation to the bolometer from the back-side of the substrate. The bolometers are designed to operate at 300~1,000 GHz and they are characterized at 321~782 GHz. Radiation patterns are measured at 321 GHz, 400 GHz, 654 GHz, and at 782 GHz. The frequency dependency of the beamwidth is studied with several azimuthal beam profile measurements at 321~500 GHz.

높은 열저항 계수를 가지는 비냉각형 적외선 열영상 이미지 센서용 MDTF(Metal-dielectric Thin Film)에 관한 연구 (A Study on the MDTF for Uncooled Infrared Ray Thermal Image Sensors with High Thermal Coefficient of Resistance)

  • 정은식;정세진;강이구;성만영
    • 한국전기전자재료학회논문지
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    • 제25권5호
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    • pp.366-371
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    • 2012
  • In this paper, fabricated by MEMS uncooled micro-bolometer detector for the study in the infrared sensitivity enhancement. Absorption layer SiOx-Metal series MDTF (metal-dielectric thin film) by high absorption rate and has a high thermal coefficient of resistance, low noise characteristics were implemented. Then MDTF were made in a vacuum deposition method. And MDTF for the analysis of the physical properties of silicon wafers were fabricated, TCR (temperature coefficient of resistance) value was made in order to measure the glass wafer and FT-IR (Fourier Transform Infrared spectroscopy) values were made in order to measure the germanium window. The analyzed results of MDTF -3 [%/K] has more characteristics of the TCR. And 8~12 um wavelength region close to 70% in the absorption characteristic.