• Title/Summary/Keyword: Bm47

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Bombyx mori β-tubulin Promoter for High-level Expression of Heterologous Genes

  • Park, Kwanho;Goo, Tae-Won
    • International Journal of Industrial Entomology and Biomaterials
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    • v.39 no.1
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    • pp.22-28
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    • 2019
  • We previously isolated 9 clones that show stronger signal compared to Bombyx mori cytoplasmic actin gene (BmA3) by using a dot blot hybridization. In this study, we focused on one clone among these clones which has high amino acid similarity with ${\beta}$-tubulin gene of B. mori. This clone was ubiquitously expressed in all tissues and developmental stage of B. mori. As result of promoter assay using dual luciferase assay system, we found the highest transcription activity region (-750/-1) in the 5'-flanking region of ${\beta}$-tubulin gene, which has about 47 fold more intensive promoter activity than BmA3 promoter. Moreover, the ${\beta}$-tubulin promoter was normally regulated in Bm5, Sf9, and S2 cells. Therefore, we suggest that ${\beta}$-tubulin promoter may be used more powerful and effectively for transgene expression in various insects containing B. mori as a universal promoter.

Temporal Logic Application Technique for Solving Spatio-temporal Problem in BM-DEVS Modeling And Simulation Environment (BM-DEVS 모델링과 시뮬레이션 환경에서의 시공간 문제 해결을 위한 시간 논리 적용 기법)

  • Jungsub Ahn;Taeho Cho
    • Proceedings of the Korean Society of Computer Information Conference
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    • 2023.01a
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    • pp.47-49
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    • 2023
  • 사회적으로 복잡한 문제들이 시공간 형태로 문제 표현이 가능하고 이를 활용하여 문제를 해결하기 위한 연구들이 진행 중이다. 특히, 시뮬레이션 이론 중 하나인 BM-DEVS는 시공간 논리를 적용하여 실세계에서 일어나는 문제들을 시공간 규칙으로써 표현하였고 이를 모델에 적용하여 시스템에서 행위를 모니터링한다. 하지만 BM-DEVS에서는 시스템 차원에서 정의된 시공간 규칙들을 평가하기 위하여 Büchi 오토마타로의 변환과 오토마타를 모델들에 반영할 수 있어야 한다. 이를 위하여 시스템을 구축하는 모델러가 직접 규칙을 오토마타로 변환하는 작업을 해야하며 이에 대한 오토마타를 모델에 적용하기까지는 많은 시간이 소요된다. 이러한 문제를 해결하기 위해 본 논문에서는 모델링의 단순화를 위하여 시공간 규칙을 모델들에 자동적으로 적용하는 방법에 대하여 소개한다.

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X-Band 50 W Pulse-Mode GaN HEMT Internally Matched Power Amplifier (X-대역 50 W급 펄스 모드 GaN HEMT 내부 정합 전력 증폭기)

  • Kang, Hyun-Seok;Bae, Kyung-Tae;Lee, Ik-Joon;Cha, Hyen-Won;Min, Byoung-Gue;Kang, Dong-Min;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.10
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    • pp.892-899
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    • 2016
  • In this paper, an X-band 50 W internally matched power amplifier is designed and fabricated using an $80{\times}150{\mu}m$ GaN HEMT that is developed by the $0.25{\mu}m$ GaN HEMT process of ETRI. The optimum source and load impedances are experimentally extracted from the loadpull measurement using impedance-transform-prematching circuits, and the transistor performance is predicted. The power performance of the internally matched power amplifier, whose matching circuits are fabricated on a substrate with ${\varepsilon}_r$ of 10.2, is measured under the pulsed mode of $100{\mu}s$ pulse period and 10 % duty cycle, and the best output power of 47.46 dBm(55.5 W) and the power-added efficiency of 46.6 % are obtained at 9.2 GHz. The output power of 47~47.46 dBm(50~55.7 W) is measured in 9.0~9.5 GHz, and the power-added efficiency is measured to be greater than 43 % in 9.0~9.3 GHz and above 36 % in 9.4~9.5 GHz.

Dual-Band Class-F Power Amplifier based on dual-band transmission-lines (이중 대역 전송선로를 활용한 이중 대역 F급 전력 증폭기 개발)

  • Lee, Chang-Min;Park, Young-Cheol
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.47 no.4
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    • pp.31-37
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    • 2010
  • In this paper, highly efficient dual-band class-F power amplifiers(PAs) for cellular and WLAN bands are suggested and implemented. For the first step, single-band class-F amplifiers at 840MHz, 2.4GHz are designed using commercial E-pHEMT FETs. The performance of two single band PAs are as much as 81.2% of efficiency with the output power of 24.4dBm with 840MHz PA and 93.5% of efficiency with 22.4dBm from the 2.4GHz. For the dual-band class-F PA, the harmonic controlling circuit with ideal SPDT switch was suggested. The length of transmission line is variable by a SPDT switch. As a results, the operation in 840MHz showed the peak efficiency of 60.5% with 23.5dBm, while in 2.4GHz mode the efficiency was 50.9% with the output power of 19.62dBm. Besides, it is shown that the harmonic controller of class-F above 2Ghz could be implemented on the low cost FR-4 substrate.

Molecular Biological Characterization of Recombinant Baculovirus with an Expanded Host Range (숙주범위가 넓어진 유전자 재조합 핵다각체병 바이러스의 분자생물학적 특성)

  • 김우진;우수동
    • Journal of Sericultural and Entomological Science
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    • v.38 no.1
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    • pp.42-47
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    • 1996
  • To investigate the host range determining factors of nuclear polyhedrois virus (NPV), Autographa california NPV and Bombyx mori NPV were coinfected into the two different cell lines, BmN-4 and Sf-9. The recombinant baculoviruses, RecS-A6 and RecB-727 which have an expanded host range, were isolated from Sf-9 and BmN-4 cell lines, respectively. The molecular biological characteristics of the recombinant baculoviruses were investigated. The pathogenicity of RecB-727 was similar to that of wild type BmNPV, while the pathogenicity of RecS-A6 was relatively lower than that of wild type BmNPV. The restriction enzyme digestion patterns of parental viruses and recombinant viruses showed that the recombinant virus has an expanded host range by genetic recombination. Southern blot analysis revealed that the p10 gene of RecB-727 was derived from AcNPV genomic DNA, while RecS-A6 has p10 gene of BmNPV in a viral genome. To investigate the host range expansion mechanism of recombinant baculovirus, HindIII-SacI 0.6 kb DNA fragments of RecS-A6 and RecB-727 were cloned and sequenced. The results showed that of wild type BmNPV helicase gene, suggesting that the expanded host range of recombinant baculoviruses was due to the insertion of BmNPV helicase gene into AcNPV viral genome.

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Performance Enhancement of Hybrid Doherty Amplifier using Drain bias control (Drain 바이어스 제어를 이용한 Hybrid Doherty 증폭기의 성능개선)

  • Lee Suk-Hui;Lee Sang-Ho;Bang Sung-Il
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.43 no.5 s.347
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    • pp.128-136
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    • 2006
  • In this paper, design and implement 50W Doherty power amplifiers for 3GPP repeater and base station transceiver system. Efficiency improvement and high power property of ideal Doherty power amplifier is distinguishable; however bias control for implementation of Doherty(GDCHD) amplifier is difficult. To solve the problem, therefore, GDCHD(Gate and Drain Control Hybrid Doherty) power amplifier is embodied to drain bias adjustment circuit to Doherty power amplifier with gate bias adjustment circuit. Experiment result shows that $2.11{\sim}2.17\;GHz$, 3GPP operating frequency band, with 57.03 dB gain, PEP output is 50.30 dBm, W-CDMA average power is 47.01 dBm, and -40.45 dBc ACLR characteristic in 5MHz offset frequency band. Each of the parameter satisfied amplifier specification which we want to design. Especially, GDCHD power amplifier shows proper efficiency performance improvement in uniformity ACLR than Doherty power amplifier.

The implementation of Gate Control Hybrid Doherty Amplifier (효율개선을 위한 Gate 제어 Hybrid Doherty 증폭기 구현)

  • Son Kil-young;Lee Suk-hui;Bang Sung-il
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.42 no.3 s.333
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    • pp.1-8
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    • 2005
  • In this paper, design and implement 60W Doherty power amplifiers for 3GPP repeater and base station transceiver system. Efficiency improvement and high power property of Doherty power amplifier is distinguishable; however implementation of assistance amplifer is difficult, though. To solve the problem, therefore, GCHD (Gate Control Hybrid Doherty) power amplifier is embodied to gate bias adjusament circuit of assistance amplifier to General Doherty power amplifier. Experiment result shows that $2.11\~2.17GHz$, 3GPP operating frequency band, with 62.55 dB gain, PEP output is 50,76 dBm, W-CDMA average power is 47.81 dBm, and -40.05 dBc ACLR characteristic in 5MHz offset frequency band. Each of the parameter satisfied amplifier specification which we want to design. Especially, GCHD power amplifier shows proper efficiency performance improvement in uniformity ACLR than general power amplifier.

A Fully Integrated Ku-band CMOS VCO with Wide Frequency Tuning (Ku-밴드 광대역 CMOS 전압 제어 발진기)

  • Kim, Young Gi;Hwang, Jae Yeon;Yoon, Jong Deok
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.12
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    • pp.83-89
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    • 2014
  • A ku-band complementary cross-coupled differential voltage controlled oscillator is designed, measured and fabricated using $0.18-{\mu}m$ CMOS technology. A 2.4GHz of very wide frequency tuning at oscillating frequency of 14.5GHz is achieved with presented circuit topology and MOS varactors. Measurement results show -1.66dBm output power with 18mA DC current drive from 3.3V power supply. When 5V is applied, the output power is increased to 0.84dBm with 47mA DC current. -74.5dBc/Hz phase noise at 100kHz offset is measured. The die area is $1.02mm{\times}0.66mm$.

A Ku-band 3 Watt PHEMT MMIC Power Amplifier for satellite communication applications (위성 통신 응용을 위한 Ku-대역 3 Watt PHEMT MMIC 전력 증폭기)

  • Uhm, Won-Young;Lim, Byeong-Ok;Kim, Sung-Chan
    • Journal of IKEEE
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    • v.24 no.4
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    • pp.1093-1097
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    • 2020
  • This work describes the design and characterization of a Ku-band monolithic microwave integrated circuit (MMIC) power amplifier (PA) for satellite communication applications. The device technology used relies on 0.25 ㎛ gate length gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) of wireless information networking (WIN) semiconductor foundry. The developed Ku-band PHEMT MMIC power amplifier has a small-signal gain of 22.2~23.1 dB and saturated output power of 34.8~35.4 dBm over the entire band of 13.75 to 14.5 GHz. Maximum saturated output power is a 35.4 dBm (3.47 W) at 13.75 GHz. Its power added efficiency (PAE) is 30.6~37.83% and the chip dimensions are 4.4 mm×1.9 mm. The developed 3 W PHEMT MMIC power amplifier is expected to be applied in a variety of Ku-band satellite communication applications.

Highly Linear 1 W Power Amplifier MMIC for the 900 MHz Band Using InGaP/GaAs HBT (InGaP/GaAs HBT를 이용한 900 MHz 대역 1 W급 고선형 전력 증폭기 MMIC 설계)

  • Joo, So-Yeon;Han, Su-Yeon;Song, Min-Geun;Kim, Hyung-Chul;Kim, Min-Su;Noh, Sang-Youn;Yoo, Hyung-Mo;Yang, Youn-Goo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.9
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    • pp.897-903
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    • 2011
  • This paper presents a highly linear power amplifier MMIC, having an output power level of about 1 watt, based on InGaP/GaAs hetero-junction bipolar transistor(HBT) technology for the 900 MHz band. The active bias circuit is applied to minimize the effect of temperature variation. Ballast resistors are optimized to prevent a current collapse and a thermal runaway. The fabricated power amplifier exhibited a gain of 17.6 dB, an output P1dB of 30 dBm, and a PAE of 44.9 % at an output P1dB from the one-tone excitation. It also showed a very high OIP3 of 47.3 dBm at an average output power of 20 dBm from the two-tone excitation.