• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1060-1062
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• 2002

Spherical and dense BAM phosphor particles were prepared by spray pyrolysis. The key idea of dense BAM particles is to lead gelation in droplets, which was successfully achieved by using the aluminum polycation as the precursor solution for the spray pyrolysis. The BAM phosphor particles prepared by spraying the aluminum polycation solution have completely spherical shape and dense structure. When directly applied to make phosphor film on the glass by the screen-printing method, the prepared spherical BAM phosphor particles showed better packing density and surface morphology than that of commercial one, which has irregular shape and large particle size. It was also found that the thermal degradation in the photoluminescence intensity for dense and spherical BAM particles was less than that of commercial one.

• 한국세라믹학회지
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• 제43권5호
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• pp.304-308
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• 2006

We have synthesized a $Eu^{2+}-activated\;Sr_3MgSi_2O_8$ blue phosphor and $(Sr,Ba)_2SiO_4$ yellow phosphor and prepared white LEDs by combining these phosphors with a InGaN UV LED chip. Three distinct emission bands from the InGaN-based LED and the two phosphors are clearly observed at 405 nm, 460 nm and at around 560 nm, respectively. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This blue emission was used as an optical transition of the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor. The 460 nm and 560 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the $Sr_3MgSi_2O_8:Eu$ and $(Sr,Ba)_2SiO_4$ host matrix. As a consequence of a preparation of UV White LED lamp using the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the ration of epoxy/two phosphor (1/0.2361). At this time, the CIE chromaticity was CIE x = 0.3140, CIE y = 0.3201 and CCT (6500 K).

• 반도체디스플레이기술학회지
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• 제18권1호
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• pp.48-52
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• 2019

The blue emitting fluorescence of $SrAl_{12}O_{19}:Ce_{0.09}{^{3+}}$, $Eu_{0.01}{^{2+}}$ phosphor includes two kinds of independent energy transfer mechanism through electric multipole interactions between donor and acceptor ions. The first energy transfer takes place between the $Ce^{3+}$ ion and the $Eu^{2+}$ion which strongly depends on the concentration $Eu^{2+}$ions. The second energy transfer occurs between the $Ce^{3+}$ ion and the $O_{Me}-Ce^{3+}$ complexes. Both energy transfer mechanisms of blue emitting peak at 410 nm were investigated by fitting of Gaussian functions. The result shows that the peak at 410 nm is two overlapping emissions originated by $Eu^{2+}$ions and $O_{Me}-Ce^{3+}$ complexes and as time elapses $Eu^{2+}$peak remains whereas $O_{Me}-Ce^{3+}$ related peak disappears.

• 한국전기전자재료학회논문지
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• 제36권5호
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• pp.494-499
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• 2023

In this paper, in order to apply the CF (color filter) type of the micro light emitting device (Micro LED) display method, a study on the manufacturing process of red and green phosphor inks for the inkjet process was conducted. The blue light-emitting KSF and LuAG phosphors were respectively used to control the phosphor particle size to about 1㎛, and a phosphor ink was prepared by synthesizing with a low-viscosity solution (IPA/Eg). A chemical dispersion method was applied to selectively control the dispersion characteristics in the manufacture of phosphor inks, and in particular, phosphor inks with a dispersant applied a dispersant secured stable dispersion characteristic compared to phosphor inks without a dispersion process. Therefore, it seems possible to manufacture CF for Micro LED through an inkjet process capable of controlling the dispersion characteristics of phosphor ink.

• 한국세라믹학회지
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• 제41권8호
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• pp.573-577
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• 2004

Eu$^{2＋}$를 활성제로 Sr$_3$MgSi$_2$ $O_{8}$ 청색 형광체를 합성하고, Sr$_3$MgSi$_2$ $O_{8}$：Eu 청색 형광체를 InGaN의 UV chip에 도포하여 청색 LED Lamp를 제조하였다. 제조된 청색 LED Lamp는 405nm와 460nm에서 두 개의 파장을 나타내고 있다. 405nm의 파장은 InGaN의 활성영역으로부터의 radiative recombination 때문에 나타나는 피크이다. 여기에서 나오는 405nm의 발광은 본 Sr$_3$MgSi$_2$ $O_{8}$：Eu 청색 형광체의 여기원으로 사용된다 460nm에서의 발광 밴드는 Sr$_3$MgSi$_2$ $O_{8}$ 모체내에서 Eu$^{2＋}$ 이온의 radiative recombination에 의한 것이다. 발광효율이 좋은 Sr$_3$MgSi$_2$ $O_{8}$：Eu 청색 형광체를 이용하여 UV 청색 LED Lmp를 제조한 결과, 에폭시와 청색 형광체의 무게 비율이 1$.$0.202에서 가장 좋은 광도값을 얻을 수 있었다. 이때 색좌표는 CIE x=0.1417, CIE y=0.0683이었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.56-59
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• 2009

In the nineties the invention of the InGaN blue LED has innovated illumination technology. Currently LCD backlighting and more and more general lighting applications are based on white LEDs comprising of inorganic phosphors and blue emitting InGaN chip. Well established phosphor materials are ortho silicates and garnets like yellow emitting YAG:Ce. In our paper we demonstrate that garnet materials also allow for green light emission for both, general lighting and backlighting LED applications.

• 한국진공학회지
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• 제21권3호
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• pp.164-170
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• 2012

청색 발광다이오드(LED) InGaN/GaN의 방사 피크 파장에 따른 LED 소자의 성능 저하를 광학적 및 전기적 특성을 고려하여 조사하였다. 방사 피크 파장이 437~452 nm인 LED 소자에 전류를 각각 60 mA, 75 mA, 그리고 90 mA로 구동하여 장시간 동안 스트레스를 주었다. 형광체의 유무에 따라서 LED 소자의 광 감쇠 특성을 관측하였다. 형광체가 없는 소자의 광 감쇠 특성은 피크 파장이 단파장일수록 급속하게 떨어진다. 형광체가 있는 소자는 형광체가 없는 것보다 감쇠 특성이 둔감해진다. 전기적 특성은 방사 피크 파장에 의존하지 않고, 스트레스 시간에 따른 LED의 내부 저항이 서서히 증가하는 현상으로 나타난다. 피크 파장에 따른 외형변화는 동일 전류 조건에서 단파장일 때 열화현상이 심하게 발생한다. 이는 청색 발광다이오드에서 발생한 빛의 파장이 단파장영역으로 갈수록 칩 외의 재료에서 단파장 광 흡수가 증가하여 열화현상이 가속화되는 것으로 분석된다. 따라서 LED 소자의 장수명을 얻기 위해서는 청색 칩의 방사 피크 파장과 소자재료의 광 열화해석이 중요하다.

• 한국세라믹학회지
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• 제43권3호
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• pp.169-172
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• 2006

We have synthesized a $Eu^{2+}-activated\;{(Sr,Ba)}_2SiO_4$ yellow phosphor and investigated the development of blue LEDs by combining the phosphor with a InGaN blue LED chip (${\lambda}_{em}$=405 nm). The InGaN-based ${(Sr,Ba)}_2SiO_{4}:Eu$ LED lamp shows two bands at 405 nm and 550 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical transition of the ${(Sr,Ba)}_2SiO_{4}:Eu$ phosphor. The 550 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the ${(Sr,Ba)}_2SiO_4$ host matrix. In the preparation of UV Yellow LED Lamp with ${(Sr,Ba)}_2SiO_{4}:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the epoxy-to-yellow phosphor ratio of 1:0.45. At this ratio, the CIE chromaticity was x=0.4097 and y=0.5488.

• 한국전기전자재료학회논문지
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• 제26권7호
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• pp.567-574
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• 2013

An optical model is proposed in the white LED using phosphor and LED chip. In this paper a new model that describes the absorption rate and quantum efficiency with increasing the mixing ratio of phosphor in silicone, and the allotment of the phosphor absorption optical power in the several phosphor mixing in the silicone. Single phosphor in silicone from the optical measurement data before and after molding, the solution to get the blue optical power and the phosphor emission optical power is proposed. By these solution the absorption rate and the quantum efficiency was obtained. The model with single phosphor mixing in the silicone the validity was confirmed.

• Transactions on Electrical and Electronic Materials
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• 제15권2호
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• pp.66-68
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• 2014

Most commercial white LED lamps use blue chip coated with yellow emitting phosphor. The use of blue excitable red and green phosphors is expected to improve the CRI. Several phosphors, such as $SrGa_2S_4:Eu^{2+}$ and $(Sr,Ba)SiO_4:Eu^{2+}$, have been suggested in the past as green components. However, there are issues of the sensitivity and stability of such phosphors. Here, we describe gallium substituted $YAG:Ce^{3+}$ phosphor, as a green emitter. YAG structures are already accepted by the industry, for their stability and efficiency. LEDs with improved CRI could be fabricated by choosing $Y_3Al_4GaO_{12}:Ce^{3+}$ (green and yellow), and $SrS:Eu^{2+}$ (red) phosphors, along with blue chip. Also, the effect of a slight change in chip wavelength is studied, for two phosphor-coated w-LEDs. The reduction in particle size of the coated phosphors also gives improved w-LED characteristics.