• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.39-42
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• 2006

A $Eu^{2+}$ doped $BaAl_2S_4$ phosphor was synthesized from BaS, EuS, Al and S powder by vacuum heat treatment. The synthesized powder at $850^{\circ}C$ was composed of only $BaAl_2S_4$ phase. The photoluminescence of $Eu^{2+}$ doped $BaAl_2S_4$ phosphor showed the blue emission centered at 470nm and CIE color coordinate at x=0.12, y=0.11.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.7-11
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• 2011

Sapphire substrate was patterned by a selective chemical wet etching technique, and GaN/InGaN structures were grown on this substrate by MOVPE (Metal Organic Vapor Phase Epitaxy). The surface of grown GaN on patterned sapphire substrate (PSS) has good morphology and uniformity. The patterned sapphire substrate LED showed better light output than conventional LED that improvement 50%. We think these results come from enhancement of internal quantum efficiency by decrease of threading dislocation and increase of light extraction efficiency. Also these LED showed more uniform emission distribution in angle than conventional LED.

• The Bulletin of The Korean Astronomical Society
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• v.42 no.2
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• pp.78.2-78.2
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• 2017

Post-starburst (E+A) galaxies are thought to be in the green valley transition phase between star-forming blue galaxies and quiescent red galaxies. They are identified by their unusual spectra characterized by strong Balmer absorption lines and weak emission lines, indicating a period of starburst followed by abrupt quenching. However, the underlying mechanism that drives the formation of E+A galaxies still remains contradictory or inconclusive. Thus, in order to differentiate between the different formation scenarios of E+A galaxies, we perform a statistical analysis of the environments of E+A galaxies. We spectroscopically identify a large sample of post-starburst galaxies from the Sloan Digital Sky Survey Data Release 7 (SDSS DR7) using a selection criteria based on $H{\delta}$ equivalent width. We report our findings and discuss their implications in the context of post-starburst galaxy formation.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.4 s.235
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• pp.632-638
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• 2005

The surface lapping process on sapphire wafer was carried out for the epitaxial process of thin film growth of GaN semiconducting material. The planarization of the wafers was investigated by the introduction of the dummy wafers. The diamond lapping process causes the surface deformation of dislocation and micro-cracks. The material deformation due to the mechanical stress was analyzed by the X-ray diffraction and the Vickers indentation. The fracture toughness was increased with the increased annealing temperature indicating the recrystallization at the surface of the sapphire wafer The sudden increase at the temperature of $1200^{\circ}C$ was correlated with the surface phase transition of sapphire from a $-A1_{2}O_{3}\;to\;{\beta}-A1_{2}O_{3}$.

• The Bulletin of The Korean Astronomical Society
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• v.35 no.2
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• pp.29.2-29.2
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• 2010

We present elemental abundances of 412 blue compact dwarf galaxies (BCDs) at z=0.2~0.5 using the Sloan Digital Sky Survey (SDSS) DR7. The gas-phase nitrogen to oxygen abundance ratios (N/O) of sample galaxies increase as the oxygen to hydrogen abundance ratios (O/H) decrease. This indicates that the nitrogen is more enriched than the oxygen. We found that there is a noticeable distinction between the merger candidates and the isolated galaxies. Merging candidates show more enrichment of nitrogen abundance compared to isolated galaxies. On the other hand, neon and oxygen abundances for merging candidates are slightly lower than the isolated systems. We discuss the main cause of these trends with internal mixing and mass loss by fast rotation of young massive stars. We also discuss the environmental effect to the relation between specific star formation rate and galaxy mass.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2009.01a
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• pp.99-102
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• 2009

In this paper a hierarchical stereo matching algorithm based on feature extraction is proposed. The boundary (edge) as feature point in an image is first obtained by segmenting an image into red, green, blue and white regions. With the obtained boundary information, disparities are extracted by matching window on the image boundary, and the initial disparity map is generated when assigned the same disparity to neighbor pixels. The final disparity map is created with the initial disparity. The regions with the same initial disparity are classified into the regions with the same color and we search the disparity again in each region with the same color by changing block size and search range. The experiment results are evaluated on the Middlebury data set and it show that the proposed algorithm performed better than a phase based algorithm in the sense that only about 14% of the disparities for the entire image are inaccurate in the final disparity map. Furthermore, it was verified that the boundary of each region with the same disparity was clearly distinguished.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.90-90
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• 2010

We investigated the modification of optical response properties of titanium dioxide (TiO2) coatings on the ceramic water-purification filters by using ultraviolet-visible absorption spectroscopy and X-ray diffraction. The TiO2 coatings were prepared on ceramic substrate by e-beam evaporation method. These amorphous TiO2 were turned into anatase phase by heat treatment at $700^{\circ}C$ for 2 hours. The doping of N atoms into the TiO2 coatings was done by using 70KeV of N＋ ion implantation with the dose of $1.0{\times}1017$ ions/cm2, followed by post-irradiation heat treatment at $550^{\circ}C$ for 2 hours. Methylene blue test of TiO2 coatings to solar irradiation showed that the post-evaporation heated TiO2 was photocatalytic and N-doped TiO2 reacted to the visible part of solar irradiation.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.243-245
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• 2009

The single phase $Ba_2SiS_4$ doped with $Eu^{2+}$ was successfully synthesized by direct sulfurization of an oxide precursor prepared by a spray drying method using a novel water soluble silicon compound, which remains soluble in a given aqueous solution. The intensity of the emission peak of thus obtained $Ba_2SiS_4:Eu^{2+}$ was 1.75 times larger than that of a sample prepared by a solid state reaction method, and it approached 106% compared to one of the best commercially available YAG:$Ce^{3+}$ phosphor.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.637-640
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• 2009

The LCD based on Kerr effect is highly interesting because it uses an optically isotropic state with no need of alignment layer and it shows sub-millisecond response time. The problem of the device is that it requires very high operating voltage and the transmittance is relatively low compared with other LCDs that use nematic LC. In this work, we study on various electrode structures and driving method which can lower operating voltage.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.476-477
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• 2009

The smallest green laser containing a built-in temperature controlling unit has been demonstrated. The device volume was just 0.5 cubic centimeters, which is nearly the same size as existing red and blue diode lasers, has an electrical-to-optical conversion efficiency of 10% and 150 mW power output. Furthermore as an alternative approach for compact green laser development, a quasi-phase matching method with wide spectral bandwidth for the reduction of speckle noise will be presented.