• Korean Journal of Materials Research
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• v.30 no.8
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• pp.413-420
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• 2020

Lu₃Al_5-xGa_xO₁₂:Ce³⁺,Cr³⁺ powders are prepared using a solid-state reaction method. To determine the crystal structure, Rietveld refinement is performed. The results indicate that Ga³⁺ ions preferentially occupied tetrahedral rather than octahedral sites. The lattice constant linearly increases, obeying Vegard's law, despite the strong preference of Ga³⁺ for the tetrahedral sites. Increasing x led to a blue-shift of the Ce³⁺ emission band in the green region and a change in the emission intensity. Persistent luminescence is observed from the powders prepared with x = 2-3, occurring through a trapping and detrapping process between Ce³⁺ and Cr³⁺ ions. The longest persistent luminescence is achieved for x = 2; its lifetime is at least 30 min. The findings are explained using crystal structure refinement, crystal field splitting, optical band gap, and electron trapping mechanism.

• Nuclear Engineering and Technology
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• v.54 no.2
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• pp.429-436
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• 2022

Investigations of retrospective dosimetry have shown that components of mobile phones are suitable as emergency dosimeters in case of radiological incidents. For physical dosimetry, components can be read out using optically stimulated luminescence (OSL), thermoluminescence (TL) and phototransferred thermoluminescence (PTTL) methods to determine the absorbed dose. This paper deals with a feasibility study of display glass from modern mobile phones that are measured by thermally assisted (Ta) optically stimulated luminescence. Violet (VSL, 405 nm) and infrared (IRSL, 850 nm) LEDs were used for optical stimulation and two protocols (Ta-VSL and Ta-IRSL) were tested. The aim was to systematically investigate the luminescence properties, compare the results to blue stimulated Ta-BSL protocol (458 nm) and to develop a robust measurement protocol for the usage as an emergency dosimeter after an incident with ionizing radiation. First, the native signals were measured to calculate the zero dose signal. Next, the reproducibility and dose response of the luminescence signals were analyzed. Finally, the signal stability was tested after the storage of irradiated samples at room temperature. In general, the developed Ta-IRSL and Ta-VSL protocols indicate usability, however, further research is needed to test the potential of a new protocol for physical retrospective dosimetry.

• Journal of Information Display
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• v.8 no.1
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• pp.10-13
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• 2007

We synthesized new blue and bluish green emitting materials by using fully substituted ethylene moieties. Multi-layered EL devices were fabricated with synthesized materials and evaluated in terms of emission color and luminescence efficiency. TBBPE[EML 2] device showed bluish-green CIE value of (0.236, 0.412) and 5.02cd/A at $10mA/cm^2$. BPBBPE[EML 3] device also showed sky-blue CIE value of(0.218, 0.355) and 2.31cd/A at $l0mA/cm^2$.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.173-179
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• 2004

The influence of heavily Si impurity doping in the GaN barrier of InGaN/GaN multi-quantum well structures of blue light emitting diodes were investigated by growing samples in metal-organic chemical vapor deposition. The delta-doped sample was compared to the sample with the undoped barrier. The delta-doped sample shows the tunneling behavior and forms the energy level of 0.32 eV for tunneling and the photoemission of the 450-nm band. The photo-luminescence shows the blue-shifted broad band of the radiative transition due to the inclusion of Si delta-doped layer indicating that the delta doping effect acts to form the higher energy level than that of quantum well. The dislocation may provide the carrier tunneling channel and plays as a source of acceptor. During the tunneling of hot carrier, there was no light emission.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.345-345
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• 2009

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.118-118
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• 2001

• Bulletin of the Korean Chemical Society
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• v.35 no.7
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• pp.2148-2150
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• 2014

• Transactions on Electrical and Electronic Materials
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• v.11 no.2
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• pp.85-88
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• 2010

Deep blue organic light emitting diodes (OLEDs) were fabricated using 5 wt.% doped BCzVBi with various blue host materials such as NPB, DPVBi, MADN and TPBi. A blue OLED device, using DPVBi as host material, was constructed via NPB ($500\;{\AA}$) / DPVBi:BCzVBi ($200\;{\AA}$) / Bphen ($300\;{\AA}$) / LiF ($20\;{\AA}$) / Al ($1,000\;{\AA}$) and it shows a maximum luminescence of $4,838\;cd/m^2$, a current density of $32.7\;mA/cm^2$, a luminous efficiency of 3.3 cd/A and CIExy coordinates of (0.19, 0.15) at 4.5 V whereas the luminous efficiencies and CIExy coordinates of other blue OLEDs using NPB, MADN and TPBi as host materials have 1.1, 2.6 and 2.0 cd/A and (0.15, 0.11), (0.15, 0.10) and (0.15, 0.10), respectively. Energy transfer mechanisms between BCzVBi and its host materials were discussed with an energy band structure of host materials.

• Korean Journal of Materials Research
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• v.15 no.5
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• pp.323-333
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• 2005

Effects of gases to growth of $SiO_2$ nanowires were characterized. $N_2$, Ar, and $O_2$ gas's effect were determined. $SiO_2$ nanowires growth scheme was varied by kind and flow rates of gases because of amounts of $O_2$. Flow rates of gases and kind of substrates affected nanowires' diameters, lengths and morphologies of grown nano wires. With increasing flow rates of gases, nanowire's diameter increased because of additional VS and SLS reactions. By TEM characterization, We knows that, grown $SiO_2$ nanowires on Si substrate showed two shell structures. These shapes of nanowires were formed by reaction of additional SLS growth. Grown $SiO_2$ nanowires showed blue luminescence by PL characterization These Blue luminescence was due to quantum confinement effect and oxygen vacancies in the nanowires.

• Journal of Information Display
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• v.11 no.4
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• pp.135-139
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• 2010

A series of Sr-Si-S compounds was synthesized using an advanced chemical method in which the use of one solution-based process uniformly dispersed the $Eu^{2+}$ activators in the host crystals, to find new compositions that would suit phosphor applications. Particular focus was given to the Si-rich region. This led to the synthesis of a single-phase compound that showed an unknown X-ray diffraction pattern. This compound had a composition close to that of $SrSi_2S_5$. When this compound is activated with $Eu^{2+}$ ($SrSi_2S_5:Eu^{2+}$), it shows a cyan-blue emission with a main luminescence peak at 495 nm. This emission is excited by wavelengths of 250-440 nm and has a maximum excitation at 350 nm.