• Title/Summary/Keyword: Blocking layer

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Characteristics of MINOS Structure using $TiO_2$ as Blocking Layer for Nonvolatile Memory applicable to OLED

  • Lee, Kwang-Soo;Jung, Sung-Wook;Kim, Kyung-Hae;Jang, Kyung-Soo;Hwang, Sung-Hyun;Lee, Jeoung-In;Park, Hyung-Jun;Kim, Jae-Hong;Son, Hyuk-Joo;Yi, Jun-Sin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1284-1287
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    • 2007
  • Titanium dioxide ($TiO_2$) is promising candidate for fabricating blocking layer of gate dielectrics in non-volatile memory (NVM). In this work, we investigated $TiO_2$ as high dielectric constant material instead of silicon dioxide ($SiO_2$), which is generally used as blocking layer for NVM.

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White Organic Light-Emitting Diodes Using DCJTB-Doped 24MeSAlq as a New Hole-Blocking Layer (새로운 정공차폐 층 (Hole blocking layer)으로 DCJTB 도핑된 24MeSAlq를 이용한 백색유기발광다이오드)

  • Kim, Mi-Suk;Lim, Jong-Tae;Yeom, Geun-Young
    • Korean Journal of Materials Research
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    • v.16 no.4
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    • pp.231-234
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    • 2006
  • To obtain balanced white-emission and high efficiency of the organic light-emitting diodes (OLEDs), a deep blue emitter made of N,N'-diphenyl-N,N'-bis(1-naphthyl)- (1,1'-biphenyl)-4,4'-diamine (NPB) emitter and a new red emitter made of the Bis(2,4 -dimethyl-8-quinolinolato)(triphenylsilanolato)aluminum(III) (24MeSAlq) doped with red fluorescent 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H -pyran (DCJTB) were used and the device was tuned by varying the thickness of the DCJTB-doped 24MeSAlq and $Alq_3$. For the white OLED with 10 nm thickness DCJTB (0.5%) doped 24MeSAlq and 45 nm thick $Alq_3$, the maximum luminance of about 29,700 $Cd/m^2$ could be obtained at 14.8 V. Also, Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.32, 0.28) at about 100 $Cd/m^2$, which is very close to white light equi-energy point (0.33, 0.33), could be obtained.

Fabrication and Characteristics of a-Si : H Photodiodes for Image Sensor (영상센서를 위한 a-Si : H 광다이오드의 제작 및 특성)

  • Park, Wug-Dong;Kim, Ki-Wan
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.29-34
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    • 1993
  • a-Si : H photodiodes for image sensor have been fabricated and characterized. Photosensitivity of a ITO/a-Si : H/Al photodiode without blocking layer was 0.7 under the applied voltage of 5 V and peak spectral sensitivity in visible region was found at 620 nm. Dark current of ITO/a-SiN : H/a-Si : H/p-a-Si : H/Al photodiode was suppressed by hole blocking layer and electron blocking layer at the value of lower than 1.5 pA to the applied voltage of 10 V. Also maximum photosensitivity was about 1 under the applied voltage of 3 V and peak spectral sensitivity was found at 540 nm.

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White Organic Light-emitting Diodes using red and blue phosphorescent materials (적색과 청색 인광 소재를 이용한 백색 유기 발광 소자에 관한 연구)

  • Park, Jung-Hyun;Choi, Hak-Bum;Kim, Gu-Young;Lee, Seok-Jae;Seo, Ji-Hyun;Seo, Ji-Hoon;Kim, Young-Kwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.64-65
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    • 2007
  • High-efficiency white organic light-emitting diodes (WOLEDs) were fabricated with two emissive layers and exciton blocking layer was sandwiched between two phosphorescent dyes which were, bis(3,5-Difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III (Flrpic) as blue emission and a newly synthesized red phosphorescent material guest, Bis(5-benzoyl-2-phenylpyridinato-C,N)iridium(III) (acetylacetonate) ((Bzppy)2Ir(III)acac). This exciton blocking layer prevents a triple-triple energy transfer between the two phosphorescent emissive layers with balanced emission of blue and red. The white device showed the Commission Internationale d'Eclairage (CIEx,y) coordinates of (0.34, 0.40) at the maximum luminance of $24100\;cd/m^2$ and maximum luminous efficiency of 22.4 cd/A, respectively.

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Selective regrowth of InP current blocking layer by chloride vapor phase epitaxy on mesa structures (Chloride VPE 법에 의한 메사 구조위에 InP 전류 차단막의 선택적 재성장)

  • 장영근;김현수;최훈상;오대곤;최인훈
    • Journal of the Korean Vacuum Society
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    • v.8 no.3A
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    • pp.207-212
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    • 1999
  • Undoped InP epilayers with high purity were grown by using $In/PCl_3/H_2$ chloride vapor phase epitaxy. It was found that the growth of InP homoepitaxial layer is optimized at the growth temperature of $630^{\circ}C$ and at the $PCl_3$ molar fraction of $1.2\times10^{-2}$. The carrier concentration of InP epilayer was less than $10^{14} {cm}^{-3}$ from the low temperature (11K) photoluminescence measurement. Growth behavior of undoped InP current blocking layer on reactive ion-etched (RIE) mesas has been investigated for the realization of 1.55 $\mu \textrm m$buried-heterostructure laser diode (BH LD), using chloride vapor phase epitaxy. On the base of InP homoepitaxy, InP current blocking layers were grown at the growth temperatures ranging from $620^{\circ}C$ to $640^{\circ}C$. Almost planar grown surfaces without edge overgrowth were achieved as the growth temperature increased. It implied that higher temperature enhanced the surface diffusion of the growth species on the {111} B planes and suppressed edge overgrowth.

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A Case Study on the Creating Artificial Planting Ground on the Waste Landfill Sites -In Case of the Bank Isolated Section Planting Layer at the Landfills of Satellite Cities of Seoul- (폐기물매립지 인공식재지반 조성 사례연구 -수도권매립지 제방이격구간 식재층을 대상으로-)

  • 조주형;이재근
    • Journal of the Korean Institute of Landscape Architecture
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    • v.29 no.1
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    • pp.131-139
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    • 2001
  • This paper aims at surveying through case studies the planting possibility on the interval artificial ground between the bank and the core landfill of the first section of works in the SUDOKWON Landfill area landfill area which was completed, followed by the layer-on-layer landfill process involving the latch or sealing layer against emitting landfill gas from the reclaimed waste. The survey results are as follows; 1. The layers of the artificial planting ground on the landfill were established on the basis of top-on-top procedure for a waste layer, a topping soil layer (T=50cm), a gas blocking layer (broken stones T=30cm), a filter layer (non-woven fabric 700g), a sheet protecting soil layer (T=20cm), and a blocking layer (HDPE SHEET 2.0mm), an irrigation layer (SAND T=30cm), a filter layer (non-woven fabric 700g), a sheet protecting soil layer (T=20cm), and a blocking layer (HDPE SHEET 2.0mm), an irrigation layer (SAND T=30cm), a filter layer (non-woven fabric 700g), a planting layer (T=90cm+), a top mound (T=2m). 2. Since no direct damage on the planting layer affected by the landfill gas was detected, planting is found to be still possible and successful except the severely unequal subsidence portion. 3. The mortality rate is discovered different on different trees: Pinus thunbergii (H3.0$\times$W1.0m) 11.25%, Pinus thunbergii (H2.5$\times$W0.8m) 4.73%, Koelreuteira paniculata 8.67%, Hibiscus syriacus 5.68%, Deutzia parviflora 6.50%, Forsythia koreana 8.17%, Rho. yedoense v. poukhanese 32.22%, and Spiraea pru v. symplicifolia 18.89%; although the last two of which are generally considered to have a strong generic growing character, they are subject to be weakened when exposed to the contaminated microclimate of the site like landfill gas. 4. The damage rates, on Pinus thunbergii, Koelreuteria paniculata, Hibiscus syracus, Forsythia koreana, Deutzia parviflora, Rho. yedoense v. poukhanense were shown to decrease to 7.31-17.69% in the second check (June 2000) lower than 5.77-46.92% in the first examination (June 1999), whereas the damage on Spiraea pru v. symplicifolia relatively increased. It is believed that preparatory method of the air pollution, change of temperature, odor by emitting landfill gas, and minute dust from vehicles should be made, and a research on this matter will be conducted in the near future.

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다결정 실리콘 박막을 사용한 비휘발성 메모리 장치의 OSO 적층구조에 따른 전하 저장량의 증가

  • Baek, Il-Ho;Jeong, Seong-Uk;Lee, Won-Baek;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.150-150
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    • 2010
  • 비휘발성 메모리의 구조는 ONO($SiO_2$, $SiN_X$, $SiN_XN_Y$), 혹은 NNO($SiN_X$, $SiN_X$, $SiN_XN_Y$)등으로 구성된 blocking layer, charge storage layer, tunneling layer 등이 일반적이다. 본 연구에서 제작된 OSO구조는charge storage layer를 a-Si을 사용한 것으로, 기존에 사용되던 charge storage layer인 $SiN_x$ 대신에 a-Si:H 를 사용하였다. 최적의 전하 저장층 조건을 알기 위하여 가스비에 따른 raman 및 bandgap 측정, 그리고 C-V 통하여 트랩된 전하 저장량 및 flatband 전압의 shift 값을 측정 및 분석하였다. 실험 결과, bandgap이 작아 band edge 저장 가능하며, SiNx 와 마찬가지로 a-Si:H 내 트랩에 저장이 가능하였다. 또한 $SiO_2$/a-Si:H와 a-Si:H/SiOxNy 계면의 결함 사이트에 전하의 저장되며, bandgap이 작아 트랩 또는 band edge에 위치한 전하들이 높은 bandgap을 가지는 blocking 또는 tunneling layer를 통하여 빠져 나오기 어려운 특성이 있었다. 본 연구에서는 최적의 전하 저장 층 조건을 알기 위하여 가스비에 raman 및 bandgap 측정, 그리고 C-V 통하여 트랩된 flatband 전압의 shift 값을 측정하여 결과를 논의하였다. 또한 OSO 구조의 두께에 있어 MIS 결과와 poly-Si 상에 실제 제작된 NVM 소자의 switching 특성을 논의하였다.

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반도성 층의 2단계 소결에 의한 염료감응형 태양전지의 특성

  • Bong, Seong-Jae;Ma, Jae-Pyeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.436-437
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    • 2012
  • 염료감응형 태양전지의 성능을 향상시키기 위해서는 염료에서 여기된 전자가 TiO2 계면을 따라 TCO (Transparent Conductive Oxide)로 이동하지 않고 산화된 염료나 전해질과 재결합하는 것을 차단하는 것, 그리고 염료에 TCO의 전기적 접촉을 차단하는 것 등이 필요하다. 이를 위해 본 연구에서는 TiO2 박막층 위에 차단층 TiO2를 $450^{\circ}C$, $600^{\circ}C$, $700^{\circ}C$에서 각각 소결한 뒤Blocking layer로서의 온도에 따른 상(phase) 변화를 통해 염료감응형 태양전지의 효율 향상에 대해 실험하였다. 기존 염료 감응형 태양전지에 대한 보고에 의하면 $600^{\circ}C$ 이상에서의 상은rutile 상임을 확인할 수 있다. 실험결과 Blocking layer로서의 TiO2를 $750^{\circ}C$에서 $750^{\circ}C$에서 sintering 했을 때, 가장 좋은 전기적 특성을 나타내었다.

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Interfacially Controlled Hybrid Thin-film Solar Cells Using a Solution-processed Fullerene Derivative

  • Nam, Sang-Gil;Song, Myeong-Gwan;Kim, Dong-Ho;Kim, Chang-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.190.2-190.2
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    • 2014
  • We report the origin of the improvement of the power conversion efficiency (PCE) of hybrid thin-film solar cells when a soluble C60 derivative, [6,6]-phenyl-$C_{61}$-butyric acid methyl ester (PCBM), is introduced as a hole-blocking layer. The PCBM layer could establish better interfacial contact by decreasing the reverse ark-saturation current density, resulting in a decrease in the probability of carrier recombination. The power conversion efficiency of this optimized device reached a maximum value of 8.34% and is the highest yet reported for hybrid thin-film solar cells.

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The fabrication of europium complex electroluminescence using BCP as hole blocking layer

  • Liang, Yujun;Zhang, Hongjie;Kim, Beung-Kwon;Jung, Young-Ho;Park, Jo-Yong;Myung, Kwang-Shik;Khatkar, S.P.;Han, Sang-Do
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.578-580
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    • 2002
  • A bright and highly monochromatic red organic electroluminescent device based on a poly(N-vinylcarbazole) host was made. The device structure consists of poly(N-vinylcarbazole) dispersed with a europium complex as an emitting layer and a hole blocking layer of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP). The EL cell exhibited just characteristic emission of europium ion.

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