• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.33-36
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• 1994

The characteristics of the nonvolatile MONOS memory devices as the nitride thickness is scaled down while maintaining constant tunneling oxide thickness and blocking oxide thickness have been investigated in order to obtain the 5V-programmable E$^2$PROM. We have found that 1V memory window for a 5V programming voltage and 10 year data retention can be achieved in the scaled MONOS memory devices with a 50 blocking oxide, a 57 nitride and a 19 tunneling oxide.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 춘계종합학술대회
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• pp.288-292
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• 2002

RF 회로에 적합한 새로운 형태의 on-chip ESD protection 방법을 제시하였다. RF 회로의 특성을 이용하여 DC blocking capacitor 앞에 short-circuited stub를 달아서 ESD 소자로 활용하였다. 특히 short-circuited stub를 매칭 회로의 일부로 사용하여 stub의 길이를 줄일 수 있다. 또한 short-circuited stub의 width와 metal의 성분으로 ESD threshold voltage를 쉽게 예측 가능하다. 기존의 ESD 방지 회로와 달리 RF 회로를 위한 ESD 방지 회로에서 문제시되던 기생 capacitance 성분에 대한 문제점을 해결 할 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제12권4호
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• pp.148-151
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• 2011

We designed and fabricated aluminium gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) with stable reverse blocking characteristics established by employing a selective fluoride plasma treatment on the drainside gate edge region where the electric field is concentrated. Implanted fluoride ions caused a depolarization in the AlGaN layer and introduced an extra depletion region. The overall contour of the depletion region was expanded along the drift region. The expanded depletion region distributed the field more uniformly and reduced the field intensity peak. Through this field modulation, the leakage current was reduced to 9.3 nA and the breakdown voltage ($V_{BR}$) improved from 900 V to 1,400 V.

• KIEE International Transactions on Power Engineering
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• 제5A권1호
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• pp.1-8
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• 2005

During magnetic inrush or over-excitation, saturation of the core in a transformer draws a significant exciting current, which can cause malfunction of a current-differential relay. This paper proposes a modified-current-differential relay for transformer protection. The relay calculates the core-loss current from the induced voltage and the core-loss resistance as well as the magnetizing current from the core flux and the magnetization curve. Finally, the relay obtains the modified differential current by subtracting the core-loss and the magnetizing currents from the conventional differential current. A comparative study of the conventional differential relay with harmonic blocking is presented. The proposed relay not only discriminates magnetic inrush and over-excitation from an internal fault, but also improves the relay speed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.97-98
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• 2000

This paper deals with the relationship between the addressing and the display in ac-PDP. Especially, deals with the transfer probability of surface discharge according to addressing voltage (Va), blocking voltage(Vg) in addressing period and the characteristics of luminance according to sustain voltage(Vs) in sustaining period with ADS(Address Display period Separation) driving method.

• Transactions on Electrical and Electronic Materials
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• 제6권3호
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• pp.115-118
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• 2005

Organic photovoltaic properties were studied in $CuPc/C_{60}$ and $ZnPc/C_{60}$ heterojunction structure by varying the organic layer thicknesses. Current density-voltage characteristics of organic photovoltaic cells were measured using Keithley 236 source-measure unit and a 500 W xenon lamp (ORIEL 66021) for a light source. From the analyses of current-voltage characteristics such as short-circuit current density, open-circuit voltage and power conversion efficiency, optimum thickness of the organic layer were obtained.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 E
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• pp.2016-2018
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• 1999

Until now, there is no report for the relationship between the condition of addressing and the characteristics of surface discharge in ac- PDP. We have known that such experiments were important to drive a-PDP. Therefore, This paper deals with the probability of transfer and the characteristics of luminance according to addressing voltage (Va), blocking voltage (Vg)in addressing period and sustain voltage(Vs)in sustaining period and we use waveform according to ADS (Address and Display period Separation) method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.391-394
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• 1999

Until now, there is no report for the relationship between the condition of addressing and the characteristics of surface discharge in ac-PDP. We have known that such these experiment was important to drive ac PDP Therefore, this paper deals with the probability of transfer and the character of luminance according to addressing voltage(Va) and blocking voltage(Vg) in addressing period and sustain voltage in sustaining period and we use waveform according to ADS(Address and Display period Separation) method

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제54권9호
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• pp.437-443
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• 2005

This paper deals with an experimental study for Klippon reiay in Cheju-Heanam HVDC system Klippon relay was troubled many times for years, and Klippon relay's fault caused the HVDC system trip. So for several years, these reasons of Klippon relay fault were investigated. The malfunction of Klippon relay in Cheju-Haenam HVDC system has been caused by the incoming of random surge(current source and voltage source). This paper has stu야ed the theoretic리 analysis and experimental study of Klippon relay, and the solutions against the problems were suggested according to their causes. Among the problems, grounding problem was removed by one-point earth connection and by modification of grounding circuit. The effects of inrush current was removed by inserting the blocking diodes by series in Klippon relay circuits. Finally, The over-voltage induced on Klippon relay, by a relay excitation coil, was removed by inserting a free-wheeling diode in Parallel with the excitation coil.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 1999년도 추계종합학술대회
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• pp.490-493
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• 1999

Due to the miniaturization of electrical components and assembles on signal and telecommunication circuits, transient overvoltages caused by switching operation or lightning surge has become more interesting concern to the field of electrical engineering. This paper describes the development of transient voltage blocking devices (TBDs) that can protect sensitive signal and telecommunication devices from overvoltages. Two kinds of TBDs are designed and tested by using a combination surge generator which can produce the standard impulse current of 8/20${\mu}$s 2.1kA according to the IEC 1000-4-5 standard. From the simulation and experimental reults, it is confirmed that the proposed TBD has an enough protection performance in low insertion loss and tight clamping voltage.