• Title/Summary/Keyword: BitBLT

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A design of Software 2D BitBLT Engine based on RTOS (RTOS 기반의 소프트웨어 2D BitBLT 엔진의 설계)

  • Kim, Bong-Joo;Hong, Jiman
    • Journal of the Korea Society of Computer and Information
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    • v.19 no.4
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    • pp.35-41
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    • 2014
  • In this paper, we proposed the implementation of software-based 2D BitBLT engine on the pSOS operating system and the operation of the BitBLT engine on patient monitoring device was verified. To verify the proposed method on the patient monitoring device, we designed prototype PCB board, and verified the operation. We designed the motherboard by using ARM9-based CPU. Because hardware-based BitBLT module was replaced with software-based one, CPU load problem was weighted. To solve this problem, w changed 400Mhz processor instead of 200Mhz processor. We implemented 2D BitBLT kernel module as a device driver which is one of the key elements of a graphics controller GUI in patient monitoring device.

Thermal Process Effects on Grain Size and Orientation in (Bi1La1)4Ti3O12 Thin Film Deposited by Spin-on Method (스핀 코팅법으로 증착한 (Bi1La1)4Ti3O12 박막의 후속 열공정에 따른 입자 크기 및 결정 방향성 변화)

  • Kim, Young-Min;Kim, Nam-Kyeong;Yeom, Seung-Jin;Jang, Gun-Eik;Ryu, Sung-Lim;Sun, Ho-Jung;Kweon, Soon-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.7
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    • pp.575-580
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    • 2007
  • A 16 Mb 1T1C FeRAM device was integrated with BLT capacitors. But a lot of cells were failed randomly during the measuring the bit-line signal distribution of each cell. The reason was revealed that the grain size and orientation of the BLT thin film were severely non-uniform. And the grain size and orientation were severely affected by the process conditions of post heat treatment, especially nucleation step. The optimized annealing temperature at the nucleation step was $560^{\circ}C$. The microstructure of the BLT thin film was also varied by the annealing time at the step. The longer process time showed the finer grain size. Therefore, the uniformity of the grain size and orientation could be improved by changing the process conditions of the nucleation step. The FeRAM device without random bit-fail cell was successfully fabricated with the optimized BLT capacitor and the sensing margin in bit-line signal distribution of it was about 340 mV.

Failure Analysis of Ferroelectric $(Bi,La)_4Ti_3O_{12}$ Capacitor in Fabricating High Density FeRAM Device (고밀도 강유전체 메모리 소자 제작 시 발생하는 $(Bi,La)_4Ti_3O_{12}$ 커패시터의 불량 분석)

  • Kim, Young-Min;Jang, Gun-Eik;Kim, Nam-Kyeong;Yeom, Seung-Jin;Hong, Suk-Kyoung;Kweon, Soon-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.257-257
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    • 2007
  • 고밀도 FeRAM (Ferroe!ectric Random Access Memory) 소자를 개발하기 위해서는 강유전체 물질을 이용한 안정적인 스텍형의 커패시터 개발이 필수적이다. 특히 $(Bi,La)_4Ti_3O_{12}$ (BLT) 강유전체 물질을 이용하는 경우에는 낮은 열처리 온도에서도 균질하고 높은 값의 잔류 분극 값을 확보하는 것이 가장 중요한 과제 중의 하나이다. 불행히도, BLT 물질은 a-축으로는 약 $50\;{\mu}C/cm^2$ 정도의 높은 잔류 분극 값을 갖지만, c-축 방향으로는 $4\;{\mu}C/cm^2$ 정도의 낮은 잔류 분극 값을 나타내는 동의 강한 비등방성 특성을 보인다. 따라서 BLT 박막에서 각각 입자들의 크기 및 결정 방향성을 세밀하게 제어하는 것은 무엇보다 중요하다. 본 연구에서는 16 Mb의 1T/1C (1-transistor/1-capacitor) 형의 FeRAM 소자를 BLT 박막을 적용하여 제작하였다. 솔-젤 (sol-gel) 용액을 이용하여 스핀코팅법으로 BLT 박막을 증착하고, 후속 열처리 공정을 RTP (rapid thermal process) 공정을 이용하여 수행하였다. 커패시터의 하부 전극 및 상부 전극은 각각 Pt/IrOx/lr 및 Pt을 적용하였다. 반응성 이온 에칭 (RIE: reactive ion etching) 공정을 이용하여 커패시터를 형성시킨 후, 32k-array (unit capacitor: $0.68\;{\mu}m$) 패턴에서 측정한 스위칭 분극 (dP=P*-P^) 값은 약 $16\;{\mu}C/cm^2$ 정도이고, 웨이퍼 내에서의 균일도도 2.8% 정도로 매우 우수한 특성을 보였다. 그러나 단위 셀들의 특성을 평가하기 위하여 bit-line의 전압을 측정한 결과, 약 10% 정도의 커패시터에서 불량이 발생하였다. 그리고 이러한 불량 젤들은 매우 불규칙적으로 분포함을 확인할 수 있었다. 이러한 불량 원인을 파악하기 위하여 양호한 젤과 불량이 발생한 셀에서의 BLT 박막의 미세구조를 분석하였다. 양호한 셀의 BLT 박막 입자들은 불량한 셀에 비하여 작고 비교적 균일한 크기를 갖고 있었다. 이에 비하여 불량한 셀에서의 BLT 박막에는 과대 성장한 입자들이 존재하고 이에 따라서 입자 크기가 매우 불균질한 것으로 확인되었다. 또 이러한 과대 성장한 입자들은 거의 모두 c-축 배향성을 나타내었다. 이상의 실험 결과들로부터, BLT 박막을 이용하여 제작한 FeRAM 소자에서 발생하는 불규칙한 셀 불량의 주된 원인은 c-축 배향성을 갖는 과대 성장한 입자의 생성임을 알 수 있었다. 즉 BLT 박막을 이용하여 FeRAM 소자를 제작하는 경우, 균일한 크기의 입자 및 c-축 배향성의 입자 억제가 매우 중요한 기술적 요소임을 알 수 있었다.

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2nd-Order 3-Bit Delta-Sigma Modulator For Zero-IF Receivers using DWA algorithm (DWA알고리즘을 적용한 Zero-IF 수신기용 2차 3비트 델타-시그마 변조기)

  • Kim, Hui-Jun;Lee, Seung-Jin;Choe, Chi-Yeong;Choe, Pyeong
    • Proceedings of the KIEE Conference
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    • 2003.11b
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    • pp.75-78
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    • 2003
  • In this paper, a second-order 3-bit DSM using DWA(Data Weighted Averaging) algorithm is designed for bluetooth Zero-IF Receiver. The designed circuit has two integrators using a designed OTA, nonoverlapping two-phase clerk generator, 3-bit A/D converter, DWA algorithm and 3-bit D/A converter An ideal model of second-order lowpass DSM with a 3-bit quantizer was configured by using MATLAB, and each coefficients and design specification of each blocks were determined to have 10-bit resolution in 1MHz channel bandwidth. The designed second-order 3-blt lowpass DSM has maximum SNR of 74dB and power consumption is 50mW at 3.3V.

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Thermal Process Effects on Grain Size and Orientation in $(Bi,La)_4Ti_3O_{12}$ Thin Film Deposited by Spin-on Method (스핀 코팅법으로 증착한 $(Bi,La)_4Ti_3O_{12}$ 박막의 후속 열공정에 따른 입자 크기 및 결정 방향성 변화)

  • Kim, Young-Min;Kim, Nam-Kyeong;Yeom, Seung-Jin;Jang, Gun-Eik;Ryu, Sung-Lim;Kweon, Soon-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.192-193
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    • 2006
  • A 16Mb ITIC FeRAM device was fabricated with BLT capacitors. The average value of the switchable 2 polarization obtained m the 32k-array (unit capacitor size: 068 ${mu}m^2$) capacitors was about 16 ${\mu}C/cm^2$ at 3V and the uniformity within an 8-inch wafer was about 2.8%. But a lot of cells were failed randomly during the measuring the bit-line signal of each cell. It was revealed that the Grain size and orientation of the BLT thin film were severely non-uniform. Therefore, the uniformity of the grain size and orientation was improved by changing the process conditions of post heat treatment. The temperature of nucleation step was the very effective on varying the microstructure of the BLT thin film. The optimized temperature of the nucleation step was $560^{\circ}C$.

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Design of a HMAC for a IPsec's Message Authentication Module (IPsec의 Message Authentication Module을 위한 HMAC의 설계)

  • 하진석;이광엽;곽재창
    • Proceedings of the IEEK Conference
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    • 2002.06b
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    • pp.117-120
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    • 2002
  • In this paper, we construct cryptographic accelerators using hardware Implementations of HMACS based on a hash algorithm such as MD5.It is basically a secure version of his previous algorithm, MD4 which is a little faster than MD5 The algorithm takes as Input a message of arbitrary length and produces as output a 128-blt message digest The input is processed In 512-bit blocks In this paper, new architectures, Iterative and full loop, of MD5 have been implemented using Field Programmable Gate Arrays(FPGAS). For the full-loop design, the performance Is about 500Mbps @ 100MHz

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Design of a ECC arithmetic engine for Digital Transmission Contents Protection (DTCP) (컨텐츠 보호를 위한 DTCP용 타원곡선 암호(ECC) 연산기의 구현)

  • Kim Eui seek;Jeong Yong jin
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.30 no.3C
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    • pp.176-184
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    • 2005
  • In this paper, we implemented an Elliptic Curve Cryptography(ECC) processor for Digital Transmission Contents Protection (DTCP), which is a standard for protecting various digital contents in the network. Unlikely to other applications, DTCP uses ECC algorithm which is defined over GF(p), where p is a 160-bit prime integer. The core arithmetic operation of ECC is a scalar multiplication, and it involves large amount of very long integer modular multiplications and additions. In this paper, the modular multiplier was designed using the well-known Montgomery algorithm which was implemented with CSA(Carry-save Adder) and 4-level CLA(Carry-lookahead Adder). Our new ECC processor has been synthesized using Samsung 0.18 m CMOS standard cell library, and the maximum operation frequency was estimated 98 MHz, with the size about 65,000 gates. The resulting performance was 29.6 kbps, that is, it took 5.4 msec to process a 160-bit data frame. We assure that this performance is enough to be used for digital signature, encryption and decryption, and key exchanges in real time environments.

Exact BER Expressions for Decode-and-Forward Relaying in Rayleigh Fading Channels (레일레이 페이딩 채널에서 디코팅 후 전달 중계방식에 대한 비트 오차율 분석)

  • Lee, In-Ho;Kim, Dong-Woo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.32 no.12A
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    • pp.1244-1250
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    • 2007
  • User cooperation provides high reliability in wireless communication systems by employing relay nodes to transmit the same information. In this paper, a bit error rate (BER) study is presented for decode-and-forward (DF) relaying for user cooperation in independent and identically distributed Rayleigh fading channels. For an arbitrary number of relays, exact and closed-form expressions of the BER are proposed for M-ary PAM (Pulse Amplitude Modulation), QAM (Quadrature Amplitude Modulation) and PSK (Phase Shift Keying), respectively. It is also shown that the analytic results are perfectly matched with the simulated ones.