• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.340-345
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• 2003

B $i_2$ $O_3$-Ti $O_2$ composite dielectric ceramics have been prepared by a conventional solid state ceramic route. The composite ceramics were prepared with starting materials of different origin and the microwave dielectric properties were investigated. The sintered ceramics were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray microanalysis, Raman and microwave methods. Structural and microstructural analyses identified two separate phases: Ti $O_2$(rutile) and B $i_2$ $Ti_4$0$_{11}$. The separate grains of titania and bismuth titanate were distributed uniformly in the ceramic matrix. The composition 0.88Ti $O_2$-0.12B $i_2$ $Ti_4$ $O_{11}$ was found to have a Q$\times$f of 9300 GHz (measured at a frequency of 3.9 GHz), a temperature coefficient of frequency, $\tau$$_{cf}$ near zero and a high relative permittivity, $\varepsilon$r of 83. The microwave dielectric properties were measured down to 20$^{\circ}$K K. The quality factor increased on cooling the ceramic samples.les.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.64-67
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• 2011

The effect of Ta substitution on the crystal structure, ferroelectric, and piezoelectric properties of $Bi_{0.5}(Na_{0.82}K_{0.18})_{0.5}Ti_{1-x}Ta_xO_3$ ceramics has been investigated. The Ta doping resulted in a transition from coexistence of ferroelectric tetragonal and rhombohedral phases to an electrostrictive pseudocubic phase, leading to degradations of the remnant polarization, coercive field, and piezoelectric coefficient $d_{33}$. However, the electricfield-induced strain was significantly enhanced by the Ta substitution-induced phase transition and reached a highest value of $S_{max}/E_{max}$ = 566 pm/V under an applied electric field 6 kV/mm when 2% Ta was substituted on Ti sites. The abnormal enhancement in strain was attributed to the pseudocubic phase with high electrostrictive constants.

• Journal of the Korean Chemical Society
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• v.12 no.4
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• pp.139-141
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• 1968

The extraction curve of metal ions with Amberite LAl-chloroform has been found to be more steeper than with Amberite LAl-xylene or hexane, and the extraction ratio of Zn (II) in 2M HCl solution is 98%. The extraction ratio of As (III) in 9~11M HCl soln., Sb (III) in 2~4M HCl soln., and Fe (III) in 6~10M HCl soln. are 100%. The separated elements from Bi metal were determined by colorimetry, Zn (III) with dithizone, As (III) with Gutzeit method, Sb (III) with brilliant green and Fe (III) with thiocyanate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.223-227
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• 2007

The effect of Eu contents on the ferroelectric properties of $Bi_{4-x}Eu_xTi_3 O_{12}$ (BET) thin films has been investigated. Bismuth Europium titanate thin films with a Eu contents were prepared on the $Pt/Ti/SiO_2/Si$ substrate by metal-organic decomposition technique. The structure and the morphology of the films were analyzed using X-ray diffraction (XRD) and field emission scanning microscopy (FE-SEM), respectively. From the XRD analysis, it was found that BET thin films have polycrystalline structure, and the layered-perovskite phase is obtained when the Eu contents exceeds 0.2 (x > 0.2). Also, the ferroelectric characteristics of the BET thin films were found to be dependent on the Eu content. Particularly, the BET films doped with x = 0.75 show better ferroelectric properties (remanent polarization 2Pr = 60.99 C/$cm^2$ and only a little polarization fatigue up to $3.5{\times}10^9$ bipolar switching cycling) than those doped with other Eu contents.

• Journal of Powder Materials
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• v.24 no.2
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• pp.108-114
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• 2017

We fabricate fine (<$20{\mu}m$) powders of $Bi_{0.5}Sb_{1.5}Te_3$ alloys using a large-scale production method and subsequently consolidate them at temperatures of 573, 623, and 673 K using a spark plasma sintering process. The microstructure, mechanical properties, and thermoelectric properties are investigated for each sintering temperature. The microstructural features of both the powders and bulks are characterized by scanning electron microscopy, and the crystal structures are analyzed by X-ray diffraction analysis. The grain size increases with increasing sintering temperature from 573 to 673 K. In addition, the mechanical properties increase significantly with decreasing sintering temperature owing to an increase in grain boundaries. The results indicate that the electrical conductivity and Seebeck coefficient ($217{\mu}V/K$) of the sample sintered at 673 K increase simultaneously owing to decreased carrier concentration and increased mobility. As a result, a high ZT value of 0.92 at 300 K is achieved. According to the results, a sintering temperature of 673 K is preferable for consolidation of fine (<$20{\mu}m$) powders.

• Journal of Radiation Protection and Research
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• v.34 no.2
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• pp.83-86
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• 2009

The single crystal scintillator of bismuth germinate ($Bi_4Ge_3O_{12}$:BGO) was successfully grown by the conventional Czochraski technique. The characteristics of the grown BGO were evaluated and presented on the excitation, emission responses and energy spectra of the $\gamma$-rays from $^{241}Am$, $^{133}Ba$, $^{57}Co$, $^{22}Na$, $^{137}Cs$ and $^{54}Mn$ radio-isotopes. The energy resolution of grown BGO, $\Delta$E/E, was estimated to be 12.1% at 662 keV of $\gamma$-ray for $^{137}Cs$ nuclide. Compared to the commercial BGO crystal, we confirmed that the grown BGO has a good performance and is comparable to reference one.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.69-71
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• 2002

$(Bi, La)Ti_{3}O_{12}(BLT)$ ferroelectric thin films were prepared on $Al_{2}O_{3}/Si$ substrates by the sol-gel method. The as-coated films were post-annealed at the temperature of $650^{\circ}C$ and $700^{\circ}C$ for 30 min. The crystallinty, surface morphologies and electrical properties were affected by the annealing temperatures. The BLT films annealed at above $650^{\circ}C$ exhibited typical bismuth layered perovskite structures with (00$\ell$) preferred orientation. The granular shaped grains with a size of approximately 90nm was formed in the film sample annealed at $700^{\circ}C$. The memory window volatge of the BLT film was 2.5V. The leakage current of BLT films annealed at $650^{\circ}C$ was about $1\times10^{-7}A/\textrm{cm}^2$ at 3V.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2004.02a
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• pp.165-169
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• 2004

It was studied on the reductive extraction between the eutectic salt and Bi metal phases. The solutes were zirconium and the rare earth elements, where zirconium was used as the surrogate for the transuranic(TRU) elements. All the experiments were performed in a glove box filled with argon gas. Two types of experimental conditions were used -high and low initial solute concentrations in salt. Li-Bi alloy was used as a reducing agent to reduce the high chemical activity of Li. The reductive extraction characteristics were examined using ICP, XRD and EPMA analysis. Zirconium was successfully separated from the rare earth elements by the reductive extraction method. The LiF-NaF-KF system was favorable among the fluoride salt systems, whereas the LiCl-KCl system was favorable among the chloride salt systems. When the solute concentrations were high, intermetallic compounds were found near the salt-metal interface.

• Archives of Metallurgy and Materials
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• v.65 no.3
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• pp.1105-1110
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• 2020

Due to air pollution, global warming and energy shortage demands new clean energy conversion technologies. The conversion of industrial waste heat into useful electricity using thermoelectric (TE) technology is a promising method in recent decades. Still, its applications are limited by the low efficiency of TE materials in the operating range between 400-600 K. In this work, we have fabricated Cu_0.005Bi_0.5Sb_1.495Te₃ powder using a single step gas atomization process followed by spark plasma sintering at different temperatures (623, 673, 723, and 773 K), and their thermoelectric properties were investigated. The variation of sintering temperature showed a significant impact on the grain size. The Seebeck coefficient values at room temperature increased significantly from 127 µVK to 151 µV/K with increasing sintering temperature from 623 K to 723 K due to decreased carrier concentration. The maximum Z T values for the four samples were similar in the range between 1.15 to 1.18 at 450 K, which suggest these materials could be used for power generation in the mid-temperature range (400-600 K).

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.33-38
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• 2011

The p-type $(Bi_{0.2}Sb_{0.8})_2Te_3$ powers were fabricated by mechanical alloying and hot-pressed at temperatures of $350{\sim}550^{\circ}C$. Themoelectric properties of the hot-pressed $(Bi_{0.2}Sb_{0.8})_2Te_3$ were characterized as a function of the hot-pressing temperature. With increasing the hot-pressing temperature from $350^{\circ}C$ to $550^{\circ}C$, the Seebeck coefficient and the electrical resistivity decreased from 237 ${\mu}V/K$ to 210 ${\mu}V/K$ and 2.25 $m{\Omega}-cm$ to 1.34 $m{\Omega}-cm$, respectively. The power factor of the hot-pressed $(Bi_{0.2}Sb_{0.8})_2Te_3$ became larger from $24.95{\times}10^{-4}W/m-K^2$ to $32.85{\times}10^{-4}W/m-K^2$ with increasing the hot-pressing temperature from $350^{\circ}C$ to $550^{\circ}C$. Among the specimens hot-pressed at $350{\sim}550^{\circ}C$, the $(Bi_{0.2}Sb_{0.8})_2Te_3$ hot-pressed at $500^{\circ}C$ exhibited the maximum dimensionless figure-of-merit of 1.09 at $25^{\circ}C$ and 1.2 at $75^{\circ}C$.