• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.371-374
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• 2002

Bismuth lanthanum titanate thin films with excess Bi contents were prepared onto Pt/Ti/$SiO_2$/Si substrate by metalorganic decomposition (MOD) technique. The structure and morphology of the films were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. From the XRD analysis, BLT thin films show polycrystalline structure and the layered-perovskite phase was obtained over 10% excess of Bi contents. As a result of ferroelectric characteristics related to the Bi content of the BLT thin film, the remanent polarization and dielectric constant decreased with increasing over Bi content of 10 % excess. The BLT film with Bi content of 10% excess was measured to have a dielectric constant of n9 and dielectric loss of 1.85[%]. The BLT thin films showed little polarization fatigue test up to 3.5 x $10^{9}$ bipolar switching cycling.

• Journal of the Korean Chemical Society
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• v.6 no.2
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• pp.133-142
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• 1962

This study was carried out to investigate the lead-bismuth-sodium ternary system which a basis of the Dittmer method as a part of "the fundamental study of pyrometallurgical debismuthizing of lead". Thermodynamic properties of each liquid Pb-Bi, Pb-Na binaries as well as liquid Pb-Bi-Na ternary solution were measured by e.m.f. of these concentration cells, and those of each component were also determined. Furthermore, iso-activity lines including Pb rich side composition of Pb-Bi-Na ternary solution were determined. The relationship between those thermodynamic characteristics and tendency of intermetallic compound formation was discussed through the above experiments.

• Journal of Electrochemical Science and Technology
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• v.11 no.1
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• pp.84-91
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• 2020

The PtBi/C and PtBiPd/C electrocatalysts were synthesized via the irreversible adsorption of Pd and Bi ions precursors on commercial Pt/C catalysts. XRD and XPS revealed the formation of an alloy structure among Pt, Bi, and Pd atoms. The current of direct formic acid oxidation (I_d) increased ~ 8 and 16 times for the PtBi/C and PtBiPd/C catalysts, respectively, than that of commercial Pt/C because of the electronic, geometric, and third body effects. In addition, the increased ratio between the current of direct formic acid oxidation (I_d) and the current of indirect formic acid oxidation (I_ind) for the PtBi/C and PtBiPd/C catalysts suggest that the dehydrogenation pathway is dominant with less CO formation on these catalysts.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.20.1-20.1
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• 2011

The nano-sized quantum structure has been an attractive candidate for investigations of the fundamental physical properties and potential applications of next-generation electronic devices. Metal nano-particles form deep quantum wells between control and tunnel oxides due to a difference in work functions. The charge storage capacity of nanoparticles has led to their use in the development of nano-floating gate memory (NFGM) devices. When compared with conventional floating gate memory devices, NFGM devices offer a number of advantages that have attracted a great deal of attention: a greater inherent scalability, better endurance, a faster write/erase speed, and more processes that are compatible with conventional silicon processes. To improve the performance of NFGM, metal nanocrystals such as Au, Ag, Ni Pt, and W have been proposed due to superior density, a strong coupling with the conduction channel, a wide range of work function selectivity, and a small energy perturbation. In the present study, bismuth metal nanocrystals were self-assembled within high-k $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN) films grown at room temperature in Ar ambient via radio-frequency magnetron sputtering. The work function of the bismuth metal nanocrystals (4.34 eV) was important for nanocrystal-based nonvolatile memory (NVM) applications. If transparent NFGM devices can be integrated with transparent solar cells, non-volatile memory fields will open a new platform for flexible electron devices.

• Journal of the Korean Ceramic Society
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• v.54 no.4
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• pp.323-330
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• 2017

To understand the defect chemistry of multiferroic $BiFeO_3-based$ systems, we synthesized nonstoichiometric $Bi_{1+x}FeO_{3{\pm}{\delta}}$ ceramics by conventional solid-state reaction method and studied their structural, dielectric and high-temperature charge transport properties. Incorporation of an excess amount of $Bi_2O_3$ lowered the Bi deficiency in $BiFeO_3$. Polarization versus electric field (P-E) hysteresis loop and dielectric properties were found to be improved by the $Bi_2O_3$ addition. To better understand the defect effects on the multiferroic properties, the high temperature equilibrium electrical conductivity was measured under various oxygen partial pressures ($pO_2{^{\prime}}s$). The charge transport behavior was also examined through thermopower measurement. It was found that the oxygen vacancies contribute to high ionic conduction, showing $pO_2$ independency, and the electronic carrier is electron (n-type) in air and Ar gas atmospheres.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.425-425
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• 2008

Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_2Te_3$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $4{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_2Te_3$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_2Te_3$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3mW is obtained at the temperature difference of 45K. We provide a promising approach for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which can employ nanostructures for high thermoelectric properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.340-344
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• 2011

Thermoelectric bismuth telluride ($Bi_2Te_3$) films were deposited on $4^{\circ}$ off oriented (001) GaAs substrates using a modified metal organic chemical vapor deposition (MOCVD) system. The effects of substrate temperature on surface morphologies, crystallinity, electrical properties and thermoelctric properties were investigated. Two dimensional growth mode (2D) was observed at substrate temperature lower than $400^{\circ}C$. However, three dimensional growth mode (3D) was observed at substrate temperature higher than $400^{\circ}C$. Change of growth mechanism from 2D to 3D was confirmed with environmental scanning electron microscope (E-SEM) and X-ray diffraction analysis. Seebeck coefficients of all samples have negative values. This result indicates that $Bi_2Te_3$ films grown by modified MOCVD are n-type. The maximum value of Seebeck coefficient was -225 ${\mu}V/K$ and the power factor was $1.86{\times}10^{-3}\;W/mK^2$ at the substrate temperature of $400^{\circ}C$. $Bi_2Te_3$ films deposited using modified MOCVD can be used to fabricate high-performance thermoelectric devices.

• Journal of the Korean Ceramic Society
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• v.45 no.4
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• pp.220-225
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• 2008

Lead-free ferroelectric ceramics are widely researched today for industrial applications as sensors, actuators and transducers. Since $Pb(Zr_aTi_{1-a})O_3$-(PZT) has high Curie temperature($T_C$), high piezoelectric properties near its morphotropic phase boundary(MPB) composition and small temperature dependence electrical behavior, it has been used to commercial materials for wide temperature range and different application fields. According to the tolerance factor concept, since the $Bi^{3+}$ cation with 12-fold coordinate has a smaller ionic radius than 12-fold coordinate $Pb^{2+}$, most bismuth based perovskites possess a smaller tolerance factor. Therefore, MPBs with a higher $T_C$ may be expected in $Bi(Me^{3+})O_3PbTiO_3$ solid solutions. As in lead based perovskite systems, it is clear that we need to explore more materials in simple or complex bismuth based MPB systems. The objective of this study is to investigate the $Bi(Ni_{1_a}X_a)O_3-PbTiO_3(X=Ti^{4+},\;Nb^{5+})$ perovskite solid-solution. For improving the electronic conduction problem, the magnesium and manganese modified system was also studied.

• Journal of the Korean Ceramic Society
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• v.28 no.2
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• pp.109-118
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• 1991

Steady-state sublimation vapour pressures of anhydrous bismuth triiodide have been measured by the torsion-effusion method from 488.8 to 570.5 K and equilibrium sublimation pressures were obtained from the steady-state data. The standard sublimation enthalpy changes derived by both second(modified sigma function) and third(average enthalpy method) law methods were 159.316${\pm}$0.055, 137.67${\pm}$1.43 kJ$.$mol-1 respectively. The standard sublmation entropy change derived by modified sigma function was 232.88${\pm}$0.10 J$.$K-1$.$mol-1. The reliable standard sublimation enthalpy change based on a correlation of {{{{ { TRIANGLE }`_{cr } ^{g } }} H{{{{ { 0} atop {m } }}(298.15K) and {{{{ { TRIANGLE }`_{cr } ^{g } }} S{{{{ { 0} atop {m } }}(298.15K), a recommended p(T) equation has been obtained for BiI3(cr) ; lg(p/Pa)=-(C$.$K/T)+5.071lg(T/K)-2.838${\times}$10-3(T/K)-7.758${\times}$103(K/T)2+1.4519 where C={{{{{ { TRIANGLE }`_{cr } ^{g } }} H{{{{ { 0} atop {m } }}(298.15K)/0.019146 kJ$.$mol-1}-456.27.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.153-156
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• 2007

Structural and electrical properties of the fully crystallized-bismuth magnesium niobate ($Bi_2Mg_{2/3}Nb_{4/3}O_7$, BMN) films with 15 mol% excess bismuth deposited on Pt bottom electrode by pulsed laser deposition are characterized for various deposition temperatures. The BMN films were crystallized with a monoclinic structure from $300^{\circ}C$ and the surface roughness slightly decreases with increasing deposition temperature. The capacitance density of the films increases with increasing deposition temperature and especially, films deposited at $400^{\circ}C$ exhibit a capacitance density of approximately $620nF/cm^2$. The crystallized BMN films with approximately 170 nm thickness exhibit breakdown strength above 600 kV/cm (${\leq}10V$) irrespective of deposition temperature and a leakage current density of approximately $2{\times}10^{-8}A/cm^2$ at 590kV/cm (at 10 V).