• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.371-374
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• 2002

Bismuth lanthanum titanate thin films with excess Bi contents were prepared onto Pt/Ti/$SiO_2$/Si substrate by metalorganic decomposition (MOD) technique. The structure and morphology of the films were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. From the XRD analysis, BLT thin films show polycrystalline structure and the layered-perovskite phase was obtained over 10% excess of Bi contents. As a result of ferroelectric characteristics related to the Bi content of the BLT thin film, the remanent polarization and dielectric constant decreased with increasing over Bi content of 10 % excess. The BLT film with Bi content of 10% excess was measured to have a dielectric constant of n9 and dielectric loss of 1.85[%]. The BLT thin films showed little polarization fatigue test up to 3.5 x $10^{9}$ bipolar switching cycling.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.563-564
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• 2008

This paper presents a new Insulated Gate Bipolar Transistor(IGBT) for power switching device based on Non Punch Through(NPT) IGBT structure. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The proposed device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure.

• 전자공학회논문지D
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• 제35D권4호
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• pp.71-77
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• 1998

In this paper, algeration of electical characteristics is analyzed when the operating temperature of MOSFET, BJT and CMOS/BiCMOS inverter is lowered from 300K to 77K. As the operating temperature is lowered, electric characteristics of MOSFET are enhanced generally but, those of bipolar transistor are degraded because current gain is reduced by BGN(Band Gap Narrowing) effect. For the inverter considered in this work, switching characteristics of PSA-BiCMOS inverter are enhanced by the electrical characteristics enhancement of MOSFET when the operating temperature is reduced to 200K, while under 200K, those of PSA-BiCMOS inverter are degraded because the degradation of BJT impacts on the inverter circuit.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.212-215
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• 1999

High-speed device is essential to optoelectric IC for optical storage system such as CD-ROM, DVD, and to ADC for high-speed communication system. This paper represents the BiCMOS process which contains high-speed SAVEN bipolar transistor and analyzes the frequency and switching characteristics of it briefly. Finally, to prove that the SAVEN device is adequate for high-speed system, latched comparator operating at 500MHz is designed with the SPICE parameter extracted from BiCMOS device simulation.

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.266-269
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• 2012

The most recently IGBT (insulated gate bipolar mode transistor) devices are in the most current conduction capable devices and designed to the big switching power device. Use this number of the devices are need to high voltage and low on-state voltage drop. And then in this paper design of field stop IGBT is insert N buffer layer structure in NPT planar IGBT and optimization design of field stop IGBT and trench field stop IGBT, both devices have a comparative analysis and reflection of the electrical characteristics. As a simulation result, trench field stop IGBT is electrical characteristics better than field stop IGBT.

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.261-265
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• 2012

IGBT(insulated gate bipolar transistor) is outstanding device for current conduction capabilities. IGBT design to control the large power switching device for power supply, converter, solar converter, electric home appliances, etc. like this IGBT device can be used in many places so to increase the efficiency of the various structures are coming. in this paper optimization design of planar type IGBT and planar field stop IGBT, and both devices have a comparative analysis and reflection of the electrical characteristics.

• 한국자동차공학회논문집
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• 제22권2호
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• pp.1-6
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• 2014

In-wheel driving inverter inside engine room sometimes operates in the harsh environment like high temperature of about $105^{\circ}C$. Especially, the size and power density of the inverter has become smaller and more increased. Thus, it is essential to manage the temperature of the inverter with IGBT (Insulated Gate Bipolar Transistor) switching devices for performance and endurance, because the temperature can be getting increase. In this paper, we performed the thermal flow analysis of inverter models with wave type and pin fin type cooling channels, and investigated the heat transfer characteristics of the inverter models using cooling water on channels at 8 L/min and $65^{\circ}C$. Also, we compared the thermal performance under various conditions such as coolant flow rate and layered power module structure. Therefore, we determined the feasibility of the initial inverter models and the thermal performance enhancement.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.70-70
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• 2011

차세대 저항 메모리로 활용 가능한 ZnO 박막의 저항 변화 특성을 평가하였다. ZnO 박막은 Pt/Ti/SiO2/Si 기판 위에 스퍼터링 시스템을 이용하여 약 50nm 두께로 증착되었다. 증착된 박막에 전극을 evaporator를 이용하여 패턴닝 함으로써 전극-반도체-전극 구조의 소자를 만들고 전기적 특성을 평가하였다. 비교적 높은 compliance current (이하Icomp)를 설정한 경우 unipolar 저항 변화특성을 나타낸 데 비해 비교적 낮은 Icomp를 설정한 경우 bipolar 저항 변화특성을 나타내었다. 두 서로 다른 저항 변화 특성은 100cycle 이상 안정적으로 재현성 있게 나타났으며 이때의 저항비는 약 $10^3$ 정도를 나타냈다. 본 결과를 바탕으로 필라멘트 이론에 기초한 저항 변화 메커니즘을 설명하는 모델이 제시되었다.

• International Journal of Automotive Technology
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• 제4권2호
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• pp.57-64
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• 2003

The Intelligent Power Unit (IPU) utilized in Honda's Civic Hybrid Integrated Motor Assist (IMA) system was developed with the aim of making every component lighter, more compact and more efficient than those in the former model. To reduce energy loss, inverter efficiency was increased by fine patterning of the Insulated Gate Bipolar Transistor (IGBT) chips, 12V DC-DC converter efficiency was increased by utilizing soft-switching, and the internal resistance of the IMA battery was lowered by modifying the electrodes and the current collecting structure. These improvements reduced the amount of heat generated by the unit components and made it possible to combine the previously separated Power Control Unit (PCU) and battery cooling systems into a single system. Consolidation of these two cooling circuits into one has reduced the volume of the newly developed IPU by 42% compared to the former model.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권2호
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• pp.113-115
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• 2000

The gradual hole injection LIGBT (GI-LIGBT) which employs the dual gate and the p+ injector, was fabricated for eliminating a negative resistance regime and reducing a forward voltage drop in SA-LIGBT. The elimination of the negative resistance regime is successfully achieved by initiating the hole injection gradually. Furthermore, the experimental results show that the forward voltage drop of GI-LIGBT decreases by lV at the current density of 200 $A/cm^2$, when compared with that of the conventional SA-LIGBT. It is also found that the improvement in the on-state characteristics can be obtained without sacrificing the inherent fast switching characteristics of SA-LIGBT.