• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.53-58
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• 2022

One of the most promising emerging technologies for the next generation of nonvolatile memory devices based on resistive switching (RS) is the resistive random-access memory mechanism. To date, RS effects have been found in many transition metal oxides. However, no clear evidence has been reported that ZnO-based resistive transition mechanisms could be associated with strong correlation effects. Here, we investigated N, F-co-doped ZnO (NFZO), which shows bipolar RS. Conducting micro spectroscopic studies on exposed surfaces helps tracking the behavioral change in systematic electronic structural changes during low and high resistance condition of the material. The significant difference in electronic conductivity was observed to attribute to the field-induced oxygen vacancy that causes the metal-insulator Mott transition on the surface. In this study, we showed the strong correlation effects that can be explored and incorporated in the field of multifunctional oxide electrons devices.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.4
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• pp.360-368
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• 2017

This paper proposes the 80-kW high-efficiency bidirectional hybrid SiC boost/buck converter using droop control for DC nano-grid. The proposed converter consists of four 20-kW modules to achieve fault tolerance, ease of thermal management, and reduced component stress. Each module is constructed as a cascaded structure of the two basic bi-directional converters, namely, interleaved boost and buck converters. A six-pack hybrid SiC intelligent power module (IPM) suitable for the proposed cascaded structure is adopted for high-efficiency and compactness. The proposed converter with hybrid switching method reduces the switching loss by minimizing switching of insulated gate bipolar transistor (IGBT). Each module control achieves smooth transfer from buck to boost operation and vice versa, since current controller switchover is not necessary. Furthermore, the proposed parallel control using DC droop with secondary control, enhances the current sharing accuracy while well regulating the DC bus voltage. A 20-kW prototype of the proposed converter has been developed and verified with experiments and indicates a 99.3% maximum efficiency and 98.8% rated efficiency.

• The Journal of the Korea institute of electronic communication sciences
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• v.5 no.2
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• pp.164-170
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• 2010

In brushless DC motor, current flow should be controlled such that only properly selected 2 out of 3 phases carry current depending on the position of rotor. In order to detect position of rotor, hole sensor, encoder, optical position-detecting sensor, and magnetic position-detecting sensor are frequently employed. These sensors not only often cause malfunction in low and high temperature but they also have disadvantage of increasing cost and size of an motor system. To reduce the cost and size and to increase the robustness of the motor system, recently researches on sensorless motor dirve are very active. This paper proposes a novel unipolar PWM switching method that can improve the control problem caused by the difficulty of detecting zero crossing point at high revolution speed by minimizing the switching noise while increasing the lifespan of the drive system.

• Proceedings of the KIEE Conference
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• 2002.07b
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• pp.1313-1315
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• 2002

This paper proposes an inverter for the grid-connected photovoltaic system based on the transformer-less inverter. This system consists of a high frequency inverter bridge, high frequency transformer, diode bridge rectifiers, a DC filter, a low frequency inverter bridge, and an AD filter. The high frequency inverter bridge switching at 20kHz is used to generate bipolar PWM pulse, which is subsequently rectified by diode bridge rectifiers to result in a full-wave rectified sine wave. Finally, it is unfolded by a low frequency inverter bridge to result in a 60Hz sine wave power output. In this paper, the control algorithm for synchronous current feedback control method and a maximum power point tracking (MPPT) method using DSP are described. And, the simulation and experimental results are shown to verify the validity of the proposed system.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.30B no.1
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• pp.38-44
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• 1993

A model for BICMOS buffer switching operation is presented, including the influence of bipolar base transit time and collector-base capacitances. A closed-form solution for the propagation delay-time is obtained assuming low level injection and channel velocity limitation. For the high level injection case, the delay-times are numerically obtained using effective current gain. These results are compared with those by HSPICE simulation, which shows good agreement. It is noted that the collector-base capacitance strongly affects the delay-time. The effects of voltage scaling are also investigated, which shows the model can be applied for the reduced supply voltages.

• JOURNAL OF ELECTRICAL WORLD
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• s.269
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• pp.66-72
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• 1999

전력$\cdot$교통$\cdot$산업$\cdot$정보$\cdot$가전의 각 분야에서 파워일렉트로닉스를 지탱하는 소자로서 파워디바이스가 하는 역할은 매우 크다. 특히 최근에는 지구온난화대책으로서 $CO_2$의 배출규제와 화석에너지 고갈에 대한 대응이 요구되고 있다. 이를 해결하기 위해 각종 전기기기 분야에서는 파워일렉트로닉스를 활용한 산업용 모터의 제어와 에어컨$\cdot$냉장고 등의 자에너지, 그리고 환경보호를 위한 전기자동차의 보급, 태양광발전과 풍력발전 등의 신에너지의 개발이 활발해지고 있다. 이와 같이 파워일렉트로닉스의 발전은 사회에 커다란 혜택을 가져다주었으나 동시에 전원의 고조파와 EMC(Electro-Magnetic Compatoboloty)문제를 초래하고 있다. 고조파 문제에 대해서는 액티브필터용 IPM(Intelligent Power Module)등의 등자으로, 기기측에서 적극저긍로 대책을 강구하고 있으나, 한편 EMC의 대응은 고조파대책에 비하여 다소 어려움이 이TDj 업계 전체적으로는 이제야 대응이 시작된 단계이다. 최근 파워디바이스의 주류가 된 IBT(Insulted Gate Bipolar Transister)는 고속성과 저포화전압이 인정되었으나 IGBT가 갖고 이쓴 고속 Switching 특성 때문에 EMC대응이 문제가 되고 있다. 따라서 IGBT자신의 특성개선은 물론 환류다이오드의 회복전류의 소프트화, 패키지의 개량, IGBT의 신구동방식의 개발 등, 파워디바이스 전체적으로 EMC에의 대응이 시작되었다.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.883-884
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• 2004

High-speed IC for time-division multiplexing (TDM) optical transmission systems have been designed and fabricated by using InP heterojunction-bipolar-transistor (HBT) technology. The driver IC was developed for driving external modulators, featuring differential outputs and the operation speed up to 10 Gbps with an output voltage swing of 1.3 Vpp at each output which was the limit of the measurement. Because -3 dB frequency was 20GHz, this circuit will be operated up to 20Gbps. 1.3Vpp differential output was achieved by switching 50 mA into a 50 $\Omega$ load. The power dissipation of the driver IC was 1W using a single supply voltage of -3.5Y. Input md output return loss of the IC were better than 10 dB and 15 dB, respectively, from DC to 20GHz. The chip size of fabricated IC was $1.7{\Box}1.2 mm^{2}$.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.117-122
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• 2005

This paper proposes an inverter for the grid-connected photovoltaic system based on the transformer-less inverter. This system consists of a high frequency converter bridge, high frequency transformer, diode bridge rectifiers, a DC filter, a low frequency inverter bridge, and an AC filter. The high frequency converter bridge switching at 20kHz is used to generate bipolar PWM pulse, and the high frequency transformer raise its voltage twice, which is subsequently rectified by diode bridge rectifiers to result in a full-wave rectified sine wave. Finally, it is unfolded by a low frequency inverter bridge to result in a 60Hz sine wave power output. Even though the high frequency link system needs more power semiconductors, a reduced size, light weight, and saved parts cost make this system more comparative than the other systems due to elimination of 60Hz transformer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.187-192
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• 2012

Development of new efficient, high voltage switching devices with wide safe operating area and low on-state losses has received considerable attention in recent years. One of those structures with a very effective geometrical design is the trench gate Insulated Gate Bipolar Transistor(IGBT).power IGBT devices are optimized for high-voltage low-power design, decided to aim. Class 1,200 V NPT Planer IGBT, 1,200 V NPT Trench IGBT for class has been studied.

• Proceedings of the KIPE Conference
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• 2004.07b
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• pp.670-672
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• 2004

In this paper, single phase boost converter with low current harmonic components and high power factor are proposed. A single-phase half-bridge rectifier based on a neutral point switch clamped scheme is proposed to draw a nearly unity power factor and regulate the DC link voltage. Three power switches are employed in the proposed rectifier. This rectifier is controlled to generate a bipolar or unipolar PWM voltage waveform on the AC side. The proposed converter is implemented by a digital signal processor.