• 제목/요약/키워드: Bipolar power supply

검색결과 61건 처리시간 0.024초

비상발전기와 ESS를 이용한 양극성 저압 직류배전에서의 비상 전력 공급 시스템 운영 방법 (The Operation Method of Emergency Power Supply System in Bipolar LVDC Using Emergency Generator and ESS)

  • 강경민;강진욱;송준호;이훈;권용훈;원충연
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2018년도 전력전자학술대회
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    • pp.180-182
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    • 2018
  • 직류배전 시스템은 신재생에너지 및 ESS(Energy Storage System)와의 결합으로 높은 에너지 이용효율을 가질 수 있다. 이러한 직류배전 시스템은 기존 교류계통을 통해 구성되며, 다양한 디지털 부하가 연계되므로 교류계통 및 메인 PCS(Power Conversion System)에 문제가 발생했을 때를 대비하여 비상 전력 공급 시스템이 필수적으로 고려되어야 한다. 최근 직류배전에서 비상 전력 공급 시스템으로 큰 관심을 받고 있는 ESS는 초기 설치비용, 용량, 수명 등의 문제로 인해 단일로 비상 전력 공급 시스템을 구성하기에 어려움이 있다. 때문에 기존에 이미 많이 설치되어 있는 비상발전기의 적용이 검토되어야 한다. 본 논문에서는 비상발전기와 ESS를 활용하여 양극성 저압직류배전에서 정전과 같은 사고 상황 발생 시 직류배전망의 전압을 빠르게 안정시킬 수 있는 시스템과 그 운영기법을 제안하였고, PSIM 시뮬레이션을 통하여 타당성을 검증하였다.

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뉴로퍼지 제어기를 이용한 고주파 유도 가열기의 시변부하에 대한 정전력 제어 (The power regulation of a High-Frequency Induction Heating System with time variance load using a neural fuzzy controller)

  • 장종승;김승철;임영도
    • 한국정보통신학회논문지
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    • 제2권2호
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    • pp.223-230
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    • 1998
  • 본 논문은 뉴랄퍼지를 이용한 디지탈식 제어기를 고주파 유도 가열기의 전력 조절을 위해 IGBT를 사용한 위상 전이(Phase-Shift) 펄스폭 변조(PWM)와 펄스 주파수 변조(PFM)가 조절되는 공진 고주파 인버터를 응용한 유도가열기를 설명한다. 이는 실제로 산업 현장에서 20KHz~500KHz 유도 가열 및 유도 용해 전원 장치용으로 쓰인다. 위상 전이(Phase-Shift) PWM 정전력 조절 기술을 바탕으로 한 적응 주파수 추종 기법은 스위칭 손실을 최소화하고 전력조절을 용이하게 하기 위해 소개되어졌다. IGBT를 사용하여 실험적으로 만들어진 실험장치는 성공적으로 논증과 토의가 되어졌다.

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Removal of Flooding in a PEM Fuel Cell at Cathode by Flexural Wave

  • Byun, Sun-Joon;Kwak, Dong-Kurl
    • Journal of Electrochemical Science and Technology
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    • 제10권2호
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    • pp.104-114
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    • 2019
  • Energy is an essential driving force for modern society. In particular, electricity has become the standard source of power for almost every aspect of life. Electric power runs lights, televisions, cell phones, laptops, etc. However, it has become apparent that the current methods of producing this most valuable commodity combustion of fossil fuels are of limited supply and has become detrimental for the Earth's environment. It is also self-evident, given the fact that these resources are non-renewable, that these sources of energy will eventually run out. One of the most promising alternatives to the burning of fossil fuel in the production of electric power is the proton exchange membrane (PEM) fuel cell. The PEM fuel cell is environmentally friendly and achieves much higher efficiencies than a combustion engine. Water management is an important issue of PEM fuel cell operation. Water is the product of the electrochemical reactions inside fuel cell. If liquid water accumulation becomes excessive in a fuel cell, water columns will clog the gas flow channel. This condition is referred to as flooding. A number of researchers have examined the water removal methods in order to improve the performance. In this paper, a new water removal method that investigates the use of vibro-acoustic methods is presented. Piezo-actuators are devices to generate the flexural wave and are attached at end of a cathode bipolar plate. The "flexural wave" is used to impart energy to resting droplets and thus cause movement of the droplets in the direction of the traveling wave.

High Speed InP HBT Driver Ie For Laser Modulation

  • Sung Jung Hoon;Burm Jin Wook
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 학술대회지
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    • pp.883-884
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    • 2004
  • High-speed IC for time-division multiplexing (TDM) optical transmission systems have been designed and fabricated by using InP heterojunction-bipolar-transistor (HBT) technology. The driver IC was developed for driving external modulators, featuring differential outputs and the operation speed up to 10 Gbps with an output voltage swing of 1.3 Vpp at each output which was the limit of the measurement. Because -3 dB frequency was 20GHz, this circuit will be operated up to 20Gbps. 1.3Vpp differential output was achieved by switching 50 mA into a 50 $\Omega$ load. The power dissipation of the driver IC was 1W using a single supply voltage of -3.5Y. Input md output return loss of the IC were better than 10 dB and 15 dB, respectively, from DC to 20GHz. The chip size of fabricated IC was $1.7{\Box}1.2 mm^{2}$.

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회전체 진동감소를 위한 마그네틱 댐퍼 설계 및 응용

  • 이봉기;김영배
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 1995년도 추계학술대회 논문집
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    • pp.769-772
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    • 1995
  • Most turbo machines, which operate at high speeds, such as gas turbines, jet engines, pumps, and compressors are prone to perrturbing vibrations. The best vibration control method for rotors is to eliminate destabilizing factors. Careful balancing application of "more stable" oil-lubricated bearing, such as tilting pad bearings or use of anti-swirl devices in seals, are examplse of passive vibration control methods. the use of magnetic bearing is an active control method. An obvious advantage of active control is that it provides damping (or modifies system stiffness or other parameters) only when there is a need for that, i.e., in emergency states, while not affecting the rotor normal operational conditions. Moreover, active control methods provide exact position control through on-line control. In this study, a magnetic actuator, digital contrliier using DSP, and bipolar operational power supply/amplifiers were developed to show the effectiveness of reducing robot vibration. Also the curve fitting procedure to obtain the transfer function of frequency dependent component was developed. Results presented in this dissertation will provide a well-defined technical parameters in designing magnetic damper system.er system.

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IGBT를 이용한 인도 철도시스템 (Indian Railway Locomotives with IGBT Based Traction Control Converter)

  • 데버랜전고팔;노영환;김윤호
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2007년도 추계학술대회 논문집
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    • pp.1438-1444
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    • 2007
  • Standard Gate Turn Off (GTO) Thyristor drive technology results in inhomogeneous turn-on and turn-off transients which in turn needs costly dv/dt and di/dt snubber circuits. Added to this GTO is bulky in size, needs external cooling, slower switching time etc. The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO technology. Indian Railway has developed first IGBT based traction converter and was commissioned in November 2006. Some of the supremacy of IGBT are smaller in size, no external cooling is required, built in power supply which enhances reliability, lower switching losses which leads to higher efficiency, reduced gate drive, high frequency operation in real time etc. These advantages are highlighted along with IGBT Traction system in operation.

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플로우팅 전극과 보조 게이트를 이용하여 스냅백을 없앤 애노드 단락 SOI LIGBT의 수치 해석 (Numerical Analyses on Snapback-Free Shorted-Anode SOI LIGBT by using a Floating Electrode and an Auxiliary Gate)

  • 오재근;김두영;한민구;최연익
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제49권2호
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    • pp.73-77
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    • 2000
  • A dual-gate SOI SA-LIGBT (shorted-anode lateral insulated gate bipolar transistor) which eliminates the snapback effectively is proposed and verified by numerical simulation. The elimination of the snapback in I-V characteristics is obtained by initiating the hole injection at low anode voltage by employing a dual gate and a floating electrode in the proposed device. For the proposed device, the snapback phenomenon is completely eliminate, while snapback of conventional SA-LIGBT occurs at anode voltage of 11 V. Also, the drive signals of two gates have same polarity by employing the floating electrode, thereby requiring no additional power supply.

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CMOS-IC Implementation of a Pulse-type Hardware Neuron Model with Bipolar Transistors

  • Torita, Kiyoko;Matsuoka, Jun;Sekine, Yoshifumi
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 ITC-CSCC -2
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    • pp.615-618
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    • 2000
  • A number of studies have recently been made on hardware for a biological neuron f3r application with information processing functions of neural networks. We have been trying to produce hardware from the viewpoint that development of a new hardware neuron model is one of the important problems in the study of neural networks. In this paper, we first discuss the circuit structure of a pulse-type hardware neuron model with the enhancement-mode MOSFETs (E-MOSFETs). And we construct a pulse-type hardware neuron model using I-MOSFETs. As a result, it is shown that our proposed new model can exhibit firing phenomena even if the power supply voltage becomes less than 1.5[V]. So it is verified that our model is profitable for IC.

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BiCMOS 회로의Stuck-Open 고장과 Stuck-On 고장 검출을 위한 테스트 패턴 생성 (Test Pattern Genration for Detection of Stuck-Open and Stuck-On Faults in BiCMOS Circuits)

  • 신재흥;임인칠
    • 전자공학회논문지C
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    • 제34C권1호
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    • pp.1-11
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    • 1997
  • A BiCMOS circuit consists of the CMOS part which performs the logic function, and the bipolar part which drives output load. In BiCMOS circuits, transistor stuck-open faults exhibit delay faults in addition to sequential beavior. Also, stuck-on faults enhanced IDDQ (quiscent power supply current) at steady state. In this paper, a method is proposed which efficiently generates test patterns to detect stuck-open faults and stuck-on faults in BiCMOS circuits. The proposed method divides the BiCMOS circuit into pull-up part and pull-down part, and generates test patterns detect faults occured in each part by structural property of the BiCMOS circuit.

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The Tripler Differential MMIC Voltage Controlled Oscillator Using an InGaP/GaAs HBT Process for Ku-band Application

  • Yoo Hee-Yong;Lee Rok-Hee;Shrestha Bhanu;Kennedy Gary P.;Park Chan-Hyeong;Kim Nam-Young
    • Journal of electromagnetic engineering and science
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    • 제6권2호
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    • pp.92-97
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    • 2006
  • In this paper, a fully integrated Ku-band tripler differential MMIC voltage controlled oscillator(VCO), which consists of a differential VCO core and two triplers, is developed using high linearity InGaP/GaAs HBT technology. The VCO core generates an oscillation frequency of 3.583 GHz, an output power of 3.65 dBm, and a phase noise of -96.7 dBc/Hz at 100 kHz offset with a current consumption of 30 mA at a supply voltage of 2.9 V. The tripler shows excellent side band rejection of 23 dBc at 3 V and 12 mA. The tripler differential MMIC VCO produces an oscillation frequency of 10.75 GHz, an output power of -13 dBm and a phase noise of -89.35 dBc/Hz at 100 kHz offset.