• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.816-819
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• 1992

Binary compound semiconductor InSb crystal which has direct-transition energy gap (0.17 ev) grown by vertical Bridgman method, then the electric-magnetic and optical properties of InSb crystal were surveyed. The growth rate of the crystals was 1mm/hr and the lattice constant $a_\circ$ of the grown crystal was 6.4863$\AA$. The electrical properties were examined by the Hall effect measurement with the van der Pauw method in the temperature range of 70$\sim$300K, magnetic field range of 500$\sim$10000 gauss. The undoped InSb crystal was n-type, the concentration and the electron mobility were 2$\sim$6 ${\times}$ $10^{16}$$\textrm{cm}^{-3}$ and carrier mobility was 6$\sim$2${\times}$$10^{4}$$cm^{2}$/v.sec at 300K, respectively. The carrier mobility was decreased with $T^{-1/2}$ due to the lattice scattering above 100K, and decreased by impurity scattering below100K. The magnetoresistance was increased 190% at 9000 gauss as compared with non-appliced magnetic field and the magnetoresistance was increased with increasing the magnetic field. Also, the Hall voltage was increased with increasing the magnetic field and decreasing the thickness of sample. The optical energy band gap of InSb at room temperature determined using the IR spectrometer was 0.167eV. The diffusion depth of Zn into InSb proportionally increased with the square root of diffusion time and the activation energy for Zn diffusion was 0.67eV. The temperature dependence of diffusion coefficient was $D=4.25{\times}10^{-3}$exp (-0.67/$K_BT$).

• Journal of Electrical Engineering and Technology
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• 제12권5호
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• pp.2007-2013
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• 2017

In order to give hydrophobic surface properties on carbon steel, the fluorinated amorphous carbon films were prepared by using linear 2.45GHz microwave PECVD device. Two different process approaches have been tested. One is direct deposition of a-C:H:F films using admixture of $Ar/CH_4/CF_4$ working gases and the other is surface treatment using $CF_4$ plasma after deposition of a-C:H film with $Ar/CH_4$ binary gas system. $Ar/CF_4$ plasma treated surface with high $CF_4$ gas ratio shows best hydrophobicity and durability of hydrophobicity. Nanometer scale surface roughness seems one of the most important factors for hydrophobicity within our experimental conditions. The properties of a-C:H:F films and $CF_4$ plasma treated a-C:H films were investigated in terms of surface roughness, hardness, microstructure, chemical bonding, atomic bonding structure between carbon and fluorine, adhesion and water contact angle by using atomic force microscopy (AFM), nano-indentation, Raman analysis and X-ray photoelectron spectroscopy (XPS).

• 한국통신학회논문지
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• 제18권8호
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• pp.1102-1107
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• 1993

CaO-TiO2 이성분계에서 40~50 mol% CaO 조성범위를 선택하여 CaTiO3과 CaTiO3-TiO2세라믹스의 마이크로파 유전특성을 조사하였다. CaTiO3 단일상 (50 mol% CaO조성)일 때 유전율(er) 178, 공진주파수 (fo)의 온도계수(r,)+1000ppm/C, 픔질계수인 Q값 2760(fo=2.7 GHz)으로 가장 큰 값을 나타내었다. CaTiO3와 TiO2상이 혼합상으로 있는 유전체에서는 CaO 함량이 감소함에 따라서 유전율과 공진주파수의 온도계수는 점차 감소하였으나 Q값과 밀도는 47 mol% CaO조성에서 가장 낮았다. 이것은 이상 혼합 세라믹에서 TiO2상의 감소로 인해 CaTiO3의 결정립 성장이 급속하게 일어남으로써 입계와 입내에 큰 기공이 존재하지 때문으로 생각된다.

• 천문학회보
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• 제35권2호
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• pp.65.2-65.2
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• 2010

We present four new transits of the planetary system TrES-3 observed between 2009 May and 2010 June. Among those, the third transit by itself indicates possible evidence for brightness disturbance, which could originate from a starspot or an overlapping double transit. A total of 107 transit times, including our measurements, were used to determine the improved ephemeris with a transit epoch of $2454185.910950\pm0.000073$ HJED (Heliocentric Julian Ephemeris Date) and an orbital period of $1.30618698\pm0.00000016$ d. We analyzed the transit light curves using the JKTEBOP code and adopting the quadratic limb-darkening law. In order to derive the physical properties of the TrES-3 system, the transit parameters are combined with the empirical relations from eclipsing binary stars and stellar evolutionary models, respectively. The stellar mass and radius obtained from a calibration using $T_{eff}$, log $\rho$ and [Fe/H] are in good agreement with those from the isochrone analysis within the uncertainties. We found that the exoplanet TrES-3b has a mass of $1.93\pm0.07\;M_{Jup}$, a radius of $1.30\pm0.04\;R_{Jup}$, a surface gravity of $28.2\pm1.1\;m\;s^{-1}$, a density of $0.82\pm0.06\;\rho_{Jup}$, and an equilibrium temperature of $1641\pm23K$.

• 폴리머
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• 제26권2호
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• pp.245-252
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• 2002

상용화제로 poly(styrene-b-methylmethacrylate) [U(S-b-MMA)] 블록 공중합체를 포함한 polymethylmethacrylate (PMMA)와 polyvinylmethylether (PVME) 블렌드의 열역학적 특성과 이들의 기체 투과특성을 조사하였다. 블렌드에 포함된 여러 고분자들 간의 상호작용 에너지를 상분리 온도와 상태방정식 이론으로부터 구하기 위해 다양한 조성의 poly(styrene-co-methylmetha-crylate) (SMMA) 랜덤 공중합체를 제조하고 이를 PVME와 블렌드하여 단상의 블렌드를 제조하였다. 공중합체 내의 스티렌 함량이 70 wt% 이상에서는 SMMA/PVME 블렌드는 단상을 형성할 뿐아니라 LCST 거동을 나타내었다. 여기서 구한 상호작용 에너지를 기초로 PMMA/PVME 블렌드의 상용성을 향상시키기 위해 P(S-b-MMA) 블록 공중합체를 상용화제로 첨가하였다. 분산상으로 존재하는 PVME 고무 입자들의 평균 크기는 상용화제 첨가량이 5 phr 이하에서는 점차 감소하지만 더 이상의 상용화제를 첨가해도 분산상의 크기 변화는 관찰되지 않았다. 일정 블렌드 조성에서 기체 투과도도 상용화제의 양이 5 phr 일때까지는 증가하지만 그 이상의 상용화제 함량에서는 기체 투과도 변화가 관찰되지 않았다.

• 열처리공학회지
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• 제4권3호
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• pp.13-20
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• 1991

The present work was aimed to examine the variation of precipitations and mechanical properties by thermomechanical treatments (TMT) in Al-2.19 wt%Li and Al-2.0 wt%Li-0.11 wt%Zr alloys. This study was performed by TEM, SEM observation, DSC, electrical resistance measurement, hardness and tensile strength measurement. First peak of resistivity aged at $90^{\circ}C$ was caused by precipitation of ${\delta}^{\prime}$-precursor phase, and second peak was caused by precipitation of ${\delta}^{\prime}$ phase. According to this result, the precipitation process of Al-2.19 wt%Li alloy was as follow : $SSSS{\rightarrow}{\delta}^{\prime}$-precursor phase ${\rightarrow}{\delta}^{\prime}$ (Coherent ${\rightarrow}$ Semi-coherent) ${\rightarrow}{\delta}$. In a Al-2.0 wt%Li-0.11 wt%Zr ternary alloy, the first peak of resistivity was appeared at initial aging heat-treatment. It is result from exsistant of ${\delta}^{\prime}$-precursor phase. The effect acceleration in a binary alloy was not appeared and the over-aging ternary alloy was accelerated with increase of the reduction rate. It is caused by combination effect of ${\delta}^{\prime}$ and composite phase.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.252-253
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• 2011

ZnO-based thin film transistors (TFTs) are of great interest for application in next generation flat panel displays. Most research has been based on amorphous indium-gallium-zinc-oxide (IGZO) TFTs, rather than single binary oxides, such as ZnO, due to the reproducibility, uniformity, and surface smoothness of the IGZO active channel layer. However, recently, intrinsic ZnO-TFTs have been investigated, and TFT- arrayss have been demonstrated as prototypes of flat-panel displays and electronic circuits. However, ZnO thin films have some significant problems for application as an active channel layer of TFTs; it was easy to change the electrical properties of the i-ZnO thin films under external conditions. The variable electrical properties lead to unstable TFTs device characteristics under bias stress and/or temperature. In order to obtain higher performance and more stable ZnO-based TFTs, HZO thin film was used as an active channel layer. It was expected that HZO-TFTs would have more stable electrical characteristics under gate bias stress conditions because the binding energy of Hf-O is greater than that of Zn-O. For deposition of HZO thin films, Hf would be substituted with Zn, and then Hf could be suppressed to generate oxygen vacancies. In this study, the fabrication of the oxide-based TFTs with HZO active channel layer was reported with excellent stability. Application of HZO thin films as an active channel layer improved the TFT device performance and bias stability, as compared to i-ZnO TFTs. The excellent negative bias temperature stress (NBTS) stability of the device was analyzed using the HZO and i-ZnO TFTs transfer curves acquired at a high temperature (473 K).

• 한국재료학회지
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• 제18권5호
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• pp.235-240
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• 2008

This paper presents results and observations obtained from a study of the optical and thermal properties of alkali tellurite depending on the composition. Fourier transform infrared (FT-IR) spectra showed evidence of chemical modification from $TeO_4$ trigonal bipyramids (tbp) to $TeO_3$ trigonal pyramids (tp) in tellurite glasses. The optical band gaps of the different glass samples calculated using Tauc's method were found to range from 3.5-3.8 eV. The glass transition temperature (Tg) and glass stability (${\Delta}T$) of alkali tellurite glasses were investigated, as $M_2O$ [M: Li, Na, K] amounted to 25 mol%, through the use of differential thermal analysis (DTA). The coefficient of thermal expansion (CTE) was measured in a thermo mechanical analysis (TMA) with a slow heating rate after the glass samples were annealed. The results confirm that the optical band gap of alkali tellurite glasses depends on the Te-O-Te structural relaxation related to the ratio of bridging/non bridging oxygen (BO/NBO). In contrast, the thermal properties are related to the ionic field strength of the Te-O-M and M-O-M bonds, and the Te-O-Te breakage depends on the ratio of BO/NBO.

• 한국전기전자재료학회논문지
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• 제13권10호
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• pp.834-839
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• 2000

The structural properties that SEM photograph of ZnO varistors surface studied by fractal mathematics program were investigated to verify the relations of electrical characteristics. The SEM photograph of ZnO varistors surface were changed by binary code and the grain shape of that were analyzed by fractal dimension. The void of ZnO varistors surface was found by fractal program. The relation between grain density and electrical properties depend on fractal dimension. The grain size in ZnO varistors surface was decreased by increasing of Sb$_2$O$_3$ addition. The spinel structure was formed by Sb$_2$O$_3$addition and it was depressed the ZnO grain formation. The grain size of ZnO by Sb$_2$O$_3$addition were from 5 to 10[${\mu}{\textrm}{m}$]. Among of ZnO varistors, fractal dimension of ZnO4 was very high as a 1.764. The density of grain boundary in ZnO2 and ZnO3 varistors surface was 15[%] by formed spinal structure. The breakdown electric field of ZnO2 that fractal dimension has 1.752 was very high to be 8.5[kV/cm]. When the fractal dimensin was high, the grain shape of ZnO varistors was complex and the serial layers of ZnO grain was increased.

• 한국화재소방학회논문지
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• 제31권5호
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• pp.1-6
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• 2017

가연성물질의 화재 및 폭발 특성치는 안전한 취급, 저장, 수송, 처리 및 폐기하는데 반드시 필요하다. 공정 안전을 위한 대표적인 연소특성치로 최소자연발화온도(AIT)를 들 수 있다. 최소자연발화온도는 가연성 액체의 안전한 취급을 위해서 중요한 지표가 된다. 최소자연발화온도는 가연성물질이 주위의 열에 의해 스스로 발화하는 최저온도이다. 본 연구에서는 ASTM E659 장치를 이용하여 가연성 혼합물인 n-Pentanol과 p-Xylene 혼합물의 최소자연발화온도와 발화지연시간을 측정하였다. 2성분계를 구성하는 순수물질인 n-Pentanol과 p-Xylene의 최소자연발화온도는 각각 $285^{\circ}C$, $557^{\circ}C$로 측정되었다. 그리고 측정된 n-Pentanol과 p-Xylene 혼합물의 최소자연발화온도와 AIT에서의 발화지연시간의 실험값은 제시된 식에 의한 계산값과 적은 평균절대오차에서 일치하였다. 따라서 본 연구에서 제시한 예측식들을 이용하여 n-Pentanol과 p-Xylene 혼합물의 다른 조성에서도 최소자연발화온도와 발화지연시간을 예측이 가능하다.