• EDISON SW 활용 경진대회 논문집
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• 제2회(2013년)
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• pp.273-277
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• 2013

We apply a density functional theory (DFT) and DFT-based non-equilibrium Green's function approach to study the electronic and transport properties of graphene nanoribbons (GNRs) co-doped with boron-nitrogen, nitrogen-phosphorus and boron-phosphorus. We analyze the structures and charge transport properties of co-doped GNRs and particularly focus on the novel effects that are absent for the single N-, B-, or P-doped GNRs. It is found that co-doped GNRs tend to be doped at the edges and the electronic structures of co-doped GNRs are very sensitive to the doping sites. Also, in case of B-N and B-P co-doped GNRs, conductance dips of single-doped GNRs disappeared with the disappearance of localized states associated with doped atoms. This may lead to a possible method of band engineering of GNRs and benefit the design of graphene electronic devices.

• 한국세라믹학회지
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• 제43권1호
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• pp.10-15
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• 2006

Photoluminescence (PL) and crystal structures of the $(l-x)CaWO_4-xLi_2WO_4$ binary system added with $Eu_2O_3$ activator have been characterized. The $CaWO_4\;and\;Li_2WO_4$ have the scheelite and phenakite structures respectively. The $CaWO_4-Li_2WO_4-Eu_2O_3$ phosphors show the red luminescence of 613 nm peak wavelength. The wavelength range of excitation spectral band is $380\~470$ nm with the peak wavelength of 397 nm. The $0.88(0.5CaWO_4-0.5Li_2WO_4)-0.12Eu_2O_3$ showed the most superior luminescence characteristics. The effect of co-doping elements such as $Al_2O_3$ and rare-earth oxides on PL has been characterized. The co-doping elements deteriorated the luminescence intensity except the $Al_2O_3$ and $Gd_2O_3$. The PL characteristics of $CaWO_4-Li_2WO_4-Eu_2O_3$ phosphors have been compared to those of the alkali europium double molybdates (tungstates) of scheelite-related structure such as $LiEu(MoO_4)_2$ and $CsEu(MoO_4)_2$. The crystal structures of $(l-y)[(l-x)CaWO_4-xLi_2WO_4]-yEu_2O_3$ phosphors have been characterized using XRD data and rietveld refinement.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.252-253
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• 2011

ZnO-based thin film transistors (TFTs) are of great interest for application in next generation flat panel displays. Most research has been based on amorphous indium-gallium-zinc-oxide (IGZO) TFTs, rather than single binary oxides, such as ZnO, due to the reproducibility, uniformity, and surface smoothness of the IGZO active channel layer. However, recently, intrinsic ZnO-TFTs have been investigated, and TFT- arrayss have been demonstrated as prototypes of flat-panel displays and electronic circuits. However, ZnO thin films have some significant problems for application as an active channel layer of TFTs; it was easy to change the electrical properties of the i-ZnO thin films under external conditions. The variable electrical properties lead to unstable TFTs device characteristics under bias stress and/or temperature. In order to obtain higher performance and more stable ZnO-based TFTs, HZO thin film was used as an active channel layer. It was expected that HZO-TFTs would have more stable electrical characteristics under gate bias stress conditions because the binding energy of Hf-O is greater than that of Zn-O. For deposition of HZO thin films, Hf would be substituted with Zn, and then Hf could be suppressed to generate oxygen vacancies. In this study, the fabrication of the oxide-based TFTs with HZO active channel layer was reported with excellent stability. Application of HZO thin films as an active channel layer improved the TFT device performance and bias stability, as compared to i-ZnO TFTs. The excellent negative bias temperature stress (NBTS) stability of the device was analyzed using the HZO and i-ZnO TFTs transfer curves acquired at a high temperature (473 K).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.302-302
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• 2011

The binary chalcogenide semiconductor Bi2Se3 is at the center of intensive research on a new state of matter known as topological insulators. It has Dirac point in their band structures with robust surface states that are protected against external perturbations by strong spin-orbit coupling with broken inversion symmetry. Such unique band configurations were confirmed by recent angle-resolved photoelectron emission spectroscopy experiments with an unwanted n-type doping effect, showing a Fermi level shift of about 0.3 eV caused by atomic defects such as Se vacancies. Since the number of defects can be reduced using the molecular beam epitaxy (MBE) method. We have prepared the Bi2Se3 film on noble metal Au(111) and semiconductor Si(111) substrates by MBE method. To characterize the film, we have introduced several surface sensitive techniques including x-ray photoemission electron spectroscopy (XPS) and micro Raman spectroscopy. Also, crystallinity of the film has been confirmed by x-ray diffraction (XRD). Using home-built scanning tunneling microscope, we observed the atomic structure of quintuple layered Bi2Se3 film on Au(111).

• 한국전기전자재료학회논문지
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• 제25권10호
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• pp.805-810
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• 2012

Transparent conducting oxides (TCOs) have wide range of application areas in transparent electrode for display devices, Transparent coating for solar energy heat mirrors, and electromagnetic wave shield. $SnO_2$ is intrinsically an n-type semiconductor due to oxygen deficiencies and has a high energy-band gap more than 3.5 eV. It is known as a transparent conducting oxide because of its low resistivity of $10^{-3}{\Omega}{\cdot}cm$ and high transmittance over 90% in visible region. In this study, co-doping effects of Al and Y on the properties of $SnO_2$ were investigated. The addition of Y in $SnO_2$ was tried to create oxygen vacancies that increase the diffusivity of oxygen ions for the densification of $SnO_2$. The addition of Al was expected to increase the electron concentration. Once, we observed solubility limit of $SnO_2$ single-doped with Al and Y. $\{(x/2)Al_2O_3+(x/2)Y_2O_3\}-SnO_2$ was used for the source of Al and Y to prevent the evaporation of $Al_2O_3$ and for the charge compensation. And we observed the valence changes of aluminium oxide because generally reported of valence changes of aluminium oxide in Tin - Aluminium binary system. The electrical properties, solubility limit, densification and microstructure of $SnO_2$ co-doped with Al and Y will be discussed.

• 전기화학회지
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• 제25권3호
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• pp.105-112
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• 2022

전고체전지의 상용화를 위해서는 상온에서 작동이 가능한 고체전해질 개발이 필수적이며 이온전도도가 높은 물질을 채택하여 전고체전지를 제조해야 한다. 따라서, 기존의 옥사이드 계열의 고체의 이온전도도를 높이기 위하여 이종원소가 도핑된 Li₇La₃Zr₂O₁₂ (LLZO)를 필러소재(Al, Nb-LLZO)로 사용하였으며, 상온에서 작동이 가능하도록 Poly(ethylene oxide)/Poly(propylene carbonate) (PEO/PPC) 기반의 가넷형 무기계 고체고분자 전해질을 제조하였다. 이원금속 원소를 도핑한 가넷형 무기계 필러와 PEO/PPC (1:1 비율로 섞인) 고분자를 1:2.4의 비율로 균일하게 교반하여 전해질을 합성해 상온과 60 ℃에서 전고체 전지의 전기학적 성능을 분석하였다. 제조한 복합 전해질은 이원금속의 도핑으로 인하여 이온전도도가 향상되었으며, PEO 단독으로 사용하는 전해질보다 PPC를 1:1로 첨가하였을 때 이온전도도 향상을 도와 60 ℃ 뿐만 아니라 상온에서 전고체 전지의 용량과 용량 유지율이 개선되었음을 확인하였다.

• Bulletin of the Korean Chemical Society
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• 제24권5호
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• pp.559-565
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• 2003

An analytical method the determination of benzo(a)pyrene (BaP) and its hydroxylated metabolites, 1-hydroxybenzo(a)pyrene (1-OHBaP), 3-hydroxybenzo(a)pyrene (3-OHBaP), benzo(a)pyrene-4,5-dihydrodiol (4,5-diolBaP) and benzo(a)pyrene-7,8-dihydrodiol (7,8-diolBaP), in rat urine and plasma has been developed by HPLC/FLD and GC/MS. The derivatization with alkyl iodide was employed to improve the resolution and the detection of two mono hydroxylated metabolites, 1-OHBaP and 3-OHBaP, in LC and GC. BaP and its four metabolites in spiked urine were successfully separated by gradient elution on reverse phase ODS $C_{18}$ column (4.6 mm I.D., 100 mm length, particle size 5 ㎛) using a binary mixture of MeOH/H₂O (85/15, v/v) as mobile phase after ethylation at 90 ℃ for 10 min. The extraction recoveries of BaP and its metabolites in spiked samples with liquid-liquid extraction, which was better than solid phase extraction, were in the range of 90.3- 101.6% in n-hexane for urine and 95.7-106.3% in acetone for plasma, respectively. The calibration curves has shown good linearity with the correlation coefficients (R²) varying from 0.992 to 1.000 for urine and from 0.996 to 1.000 for plasma, respectively. The detection limits of all analytes were obtained in the range of 0.01-0.1 ng/mL for urine and 0.1-0.4 ng/mL for plasma, respectively. The metabolites of BaP were excreted as mono hydroxy and dihydrodiol forms after intraperitoneal injection of 20 mg/kg of BaP to rats. The total amounts of BaP and four metabolites excreted in dosed rat urine were 3.79 ng over the 0-96 hr period from adminstration and the excretional recovery was less than 0.065% of the injection amounts of BaP. The proposed method was successfully applied to the determination of BaP and its hydroxylated metabolites in rat urine and plasma for the pharmacokinetic studies.

• 전기화학회지
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• 제1권1호
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• pp.1-7
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• 1998

중간온도$(700\~800^{\circ}C)$형 고체산화물 연료전지(solid oxide filet cells)의 양극재료로 이용을 목표로 $Gd_{0.8}Ca_{0.2}Co_{1-x}Fe_xO_3,\;(x=0.0\~0.5)$ 분말을 합성하고 이의 열적 안정성, 전도특성을 조사하였다. 또한 이를 CGO(Cerium-Gadolinium Oxide) 전해질 디스크에 부착하여 양극특성을 조사하였다. 양극재료를 구연산 법에 의하여 $800^{\circ}C$에서 하소하여 분말을 합성하였을 때, Fe의 함량에 상관없이 모두 페롭스카이트 단일상을 얻을 수 있었다. 합성분말의 열적 안정성을 측정하였는데, Fe의 함량이 적을수록 열적 안정성이 열악하여 x=0.0인 시료는 $1300^{\circ}C$에서 분해되었다 그러나 Fe이 치환된 재료의 경우에는 $1400^{\circ}C$까지 분해현상은 없었으나 $1300^{\circ}C$ 근처에서 용응되는 현상이 관찰되어 양극층의 접착온도를 $1300^{\circ}C$ 이하로 설정해야 함을 알았다. $Gd_{0.8}Ca_{0.2}Co_{1-x}Fe_xO_3,\;(x=0.0\~0.5)$로 반쪽전지를 제작하여 $800^{\circ}C$ 공기중에서 전지를 가동하며 양극의 산소환원 반응에 대한 활성을 조사한 결과 조성에 상관없이 $La_{0.9}Sr_{0.1}MnO_3$보다 우수한 활성을 가졌고, $x=0.0\~0.5$인 전극중에서는 x=0.2일 때 가장 좋은 양극특성을 보였다. 이와 같이 x=0.2인 경우에 가장 우수한 활성을 갖는 이유를, Fe의 함량이 많은 경우는 열적 안정성이 우수하나산소환원 반응에 대한 활성은 감소하므로 x=0.2에서 열적 안정성과 활성 사이에 최적의 trade-off가 나타남으로 설명하였다. x=0.2인 시료의 전기 전도도를 직류 4단자법에 의하여 측정하였을 때 $800^{\circ}C$에서 51 S/cm의 값을 나타내었고, 교류 2단자법으로 측정한 이온 전도도는$800^{\circ}C$에서 $6.0\times10^{-4}S/cm$의 값을 나타내었다. 즉 이 물질은 혼합 전도체로서 전극의 전 표면이 반응의 활성점으로 작용할 가능성이 있고, 이로부터 이들이 $La_{0.9}Sr_{0.1}MnO_3$보다 우수한 양극활성을 갖는 이유를 설명할 수 있었다.