• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
• /
• pp.99-99
• /
• 1999

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.855-858
• /
• 2001

The stress induced leakage currents of thin silicon oxides is investigated in the VLSI implementation of a self learning neural network integrated circuits using a linearity synapse transistor. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 41 ${\AA}$, 86${\AA}$, which have the channel width ${\times}$ length 10 ${\times}$1${\mu}$m, 10 ${\times}$0.3${\mu}$m respectively. The stress induced leakage currents will affect data retention in synapse transistors and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor made by thin silicon oxides has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제15권5호
• /
• pp.526-532
• /
• 2015

We quantitatively investigated instability mechanisms under simultaneous positive gate and drain bias stress (SPGDBS) in self-aligned top-gate amorphous indium-zinc-oxide thin-film transistors. After SPGDBS ($V_{GS}=13V$and $V_{DS}=13V$), the parallel shift of the transfer curve into a negative $V_{GS}$ direction and the increase of on current were observed. In order to quantitatively analyze mechanisms of the SPGDBS-induced negative shift of threshold voltage (${\Delta}V_T$), we experimentally extracted the density-of-state, and then analyzed by comparing and combining measurement data and TCAD simulation. As results, 19% and 81% of ${\Delta}V_T$ were taken to the donor-state creation and the hole trapping, respectively. This donor-state seems to be doubly ionized oxygen vacancy ($V{_O}^{2+}$). In addition, it was also confirmed that the wider channel width corresponds with more negative ${\Delta}V_T$. It means that both the donor-state creation and hole trapping can be enhanced due to the increase in self-heating as the width becomes wider. Lastly, all analyzed results were verified by reproducing transfer curves through TCAD simulation.

• 인간식물환경학회지
• /
• 제23권2호
• /
• pp.125-138
• /
• 2020

The aim of this study was to review previous literature to determine the effects of nature-based program for workers. This systematic review was conducted in accordance with National Evidence-based Healthcare Collaborating Agency's guidance for undertaking systematic reviews for intervention. Literature search was performed using National Assembly Digital Library, Korean Studies Information Service System, and Korea Education & Research Information Service for literature published until March 2019. The participants were full-time workers, and intervention of nature-based programs was conducted in the outdoor, indoor, and indirect nature contact exposures, with comparators in the control group who did not receive the treatment. The results showed that the programs were effective in physical, psychological, and social health. The methodological quality of randomized controlled trials (RCT) was assessed using the Cochrane Risk of Bias(RoB) tool, while non-randomized controlled trials (N-RCT) were assessed using the Cochrane Risk of bias assessment tool for non-randomized studuies (RoBANS). A total of 16 studies were selected for assessment: two RCTs, 10 N-RCTs, and four one-group pretest-posttest designs. Most interventions were provided at the workplace and in the community. There were many kinds of nature-based interventions, and forest therapy and horticultural therapy programs were most common. Various interventions for workers effectively improved job stress, depression, serum cortisol and stress-response. However, the included studies lacked methodological rigor. Future research is needed to evaluate the long-term effectiveness of nature-based programs for workers using rigorous research designs.

• International Journal of Naval Architecture and Ocean Engineering
• /
• 제13권1호
• /
• pp.379-395
• /
• 2021

For the complicated structural details in ships and offshore structures, the traditional hotspot stress approaches are known to be sensitive to the element variables of element topologies, sizes, and integration schemes. This motivated to develop a new approach for predicting reasonable hotspot stresses, which is less sensitive to the element variables and easy to be implemented the real marine structures. The three-point bending tests were conducted for the longitudinal attachments with the round and rectangular weld toes. The tests were reproduced in the numerical simulations using the solid and shell element models, and the simulation technique was validated by comparing the experimental stresses with the simulated ones. This paper considered three hotspot stress approaches: the ESM method based on surface stress extrapolation, the Dong's method based on nodal forces along a weld toe, and the proposed method based on nodal forces perpendicular to an imaginary vertical plane at a weld toe. In order to study the element sensitivities of each method, 16 solid element models and 8 shell element models were generated under the bending and tension loads, respectively. The element sensitivity was analyzed in terms of Stress Concentration Factors (SCFs) in viewpoints of two statistical quantities of mean and bias with respect to the reference SCFs. The average SCFs predicted by the proposed method were remarkably in good agreement with the reference SCFs based on the experiments and the ship rules. Negligibly small Coefficients of Variation (CVs) of the SCFs, which is measure of statistical bias, were drawn by the proposed method.

• 스마트미디어저널
• /
• 제12권11호
• /
• pp.1-9
• /
• 2023

스트레스는 감당하기 어려운 외부 또는 내부 요인으로부터 유발되는 것으로 현대 사회의 주요한 문제 중 하나이다. 높은 스트레스가 장기적으로 지속되면 만성적으로 발전할 수 있으며, 건강 및 생활 전반에 큰 악영향을 초래할 수 있다. 그러나 만성적인 스트레스를 겪는 사람들은 자신이 스트레스를 받고 있는지 알아차리기 어렵기 때문에 사전에 스트레스를 인지하고 관리하는 것이 중요하다. 웨어러블 기기로부터 측정된 생체 신호를 이용하여 스트레스를 탐지한다면, 스트레스를 효율적으로 관리할 수 있을 것이다. 그러나 생체 신호를 이용하는 데에는 두 가지 문제점이 있다. 첫째로 생체 신호에서 수작업 특징을 추출하는 것은 바이어스를 발생시킬 수 있으며, 두 번째는 실험 주체에 따라 분류 모델 성능의 변이가 클 수 있다는 것이다. 본 논문에서는 데이터의 핵심적인 특징을 표현할 수 있는 합성곱 오토인코더를 이용해 바이어스를 줄이고 앙상블 학습 중 하나인 소프트 보팅을 이용해 일반화 능력을 높여 성능의 변이를 줄이는 모델을 제안한다. 모델의 일반화 성능을 확인하기 위하여 LOSO 교차 검증 방법을 이용하여 성능을 평가한다. 본 논문에서 제안한 모델은 WESAD 데이터셋을 이용하여 높은 성능을 보여주었던 기존의 연구들보다 우수한 정확도를 보임을 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
• /
• pp.385-388
• /
• 2009

We have investigated the effect of the device structure on the performance of polycrystalline ZnO TFT and amorphous AZTO TFT with top gate and bottom gate structure. While the mobility of both TFTs showed relatively similar value in a top and bottom gate structure, bias stability was quite different depending on the device structure. Top gate TFT showed much less Vth shift under positive bias stress compared to that of bottom gate TFT. We attributed this different behavior to the defects formation on the gate insulator induced by energetic bombardment during the active layer deposition in a bottom gate TFT. We suggest the top gate oxide TFT would show more stable behavior under the Vgs bias.

• 반도체디스플레이기술학회지
• /
• 제19권4호
• /
• pp.88-93
• /
• 2020

Based on the capture-emission energy (CEE) maps of CMOS devices, a physics-informed machine learning model for the bias temperature instability (BTI)-induced threshold voltage shifts and low frequency noise is presented. In order to incorporate physics theories into the machine learning model, the integration of artificial neural network (IANN) is employed for the computation of the threshold voltage shifts and low frequency noise. The model combines the computational efficiency of IANN with the optimal estimation of Gaussian mixture model (GMM) with soft clustering. It enables full lifetime prediction of BTI under various stress and recovery conditions and provides accurate prediction of the dynamic behavior of the original measured data.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.194-194
• /
• 2011

The effects of argon neutral beam (NB) energy on the amorphous carbon (a-C) films were investigated, while the a-C films were deposited by neutral particle beam assisted sputtering (NBAS) system. The energy of neutral particle beam can be controlled by reflector bias voltage directly as a unique operating parameter in this system. The deposition characteristics of the films investigated of Raman spectra, UV-visible spectroscopy, electrical conductivity, stress measurement system, and ellipsometer indicate the properties of amorphous carbon films can be manipulated by only NB energy (or reflector bias voltage) without changing any other process parameters. We report the effect of reflector bias voltage in the range from 0 to -1KV. By the increase of the reflector bias voltage, the amount of cross-linked sp2 clusters as well as the sp3 bonding in the a-C film coated by the NBAS system can be increased effectively and the composition of carbon thin films can be changed from nano-crystalline graphite phase to amorphous carbon phase.

• 한국재료학회지
• /
• 제11권9호
• /
• pp.769-775
• /
• 2001

High quality PZT piezoelectric thin films were sputter- deposited on$ RuO_2$/$SiO_2$/Si substrates by using 2-step deposition method. As the first step, PZT seed layers were fabricated at a low temperature($475^{\circ}C$ ) to form a pure perovskite phase by reducing the volatility of Pb oxide. and then, as the second step, the PZT films were deposited at high temperatures ($530^{\circ}C$~$570^{\circ}C$) to reduce the defect density in the films. By this method, the pure perovskite phase was obtained at high deposition temperature range ($530^{\circ}C$~$570^{\circ}C$) and the superior electrical properties of PZT films were obtained on $RuO_2$substrate : 2Pr : 60$\mu$C/$\textrm{cm}^2$, $E_c: 60kV/cm, \;J_t: 10^{-6}A/cm^2\; at\; 250kV/cm$. The residual stress of PZT films fabricated by the 2-step deposition method was tensile and below 150MPa. It was attempted to control the residual stress in the PZT films by applying a negative bias to the substrate. As the amplitude of the substrate bias was increased, the residual tensile stress was slightly decreased, however, the ferroelectric properties of PZT films were degraded by ion bombardment.