• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.351.1-351.1
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• 2014

In this study, we prepared the solution-based In-Ga-Zn oxide thin film transistors (IGZO TFTs) of multistacked active layer and characterized the gate bias instability by measuring the change in threshold voltage caused by stacking. The solutions for IGZO active layer were prepared by In:Zn=1:1 mole ratio and the ratio of Ga was changed from 20% to 30%. The TFTs with multistacked active layer was fabricated by stacking single, double and triple layers from the prepared solutions. As the number of active layer increases, the saturation mobility shows the value of 1.2, 0.8 and 0.6 (). The electrical properties have the tendency such as decreasing. However when gate bias VG=10 V is forced to gate electrode for 3000 s, the threshold voltage shift was decreased from 4.74 V to 1.27 V. Because the interface is formed between the each layers and this affected the current path to reduce the electrical performances. But the uniformity of active layer was improved by stacking active layer with filling the hole formed during pre-baking so the stability of device was improved. These results suggest that the deposition of multistacked active layer improve the stability of the device.

• Journal of the Korean institute of surface engineering
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• v.44 no.5
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• pp.213-219
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• 2011

Recently aspheric lenses are widely used for superpricision optical instruments, such as cellular phone camera modules, digital cameras and optical communication modules. The aspherical lenses are processed using mold core under high temperature compressive forming pressure. It is imperative to develop superhard protective films for the life extension of lens forming mold core. Especially ta-C films with higher $sp^3$ fractions receive attentions for the life extension of lens forming mold and, in turn, the cost reduction of lenses due to their suprior high temperature stability, high hardness and smooth surfaces. In this study ta-C films were processed on WC mold as a function of substrate bias voltage using FVA (Filtered Vacuum Arc) method. The processed films were characterized by Raman spectroscopy and nano-indentation to investigate bonding nature and hardness, respectively. The film with maximun 87% of $sp^3$ fraction was obtained at the substrate bias voltage of -60 V, which was closest to ta-C film. ta-C films showed better high temperature stability by sustaining relatively high fraction of $sp^3$ bonding even after 2,000 glass lens forming applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.6
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• pp.560-566
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• 2004

In this paper, active frequency doubler with broadband characteristics from 6 ㎓ to 12 ㎓ was designed and fabricated using PHEMT. The designed frequency multiplier has a bias point near pinch-off and a proposed series RC circuit between bias line and input matching network far the improvement of stability. With 0 ㏈m input power, second harmonic of 1.7 ㏈m at 12 ㎓ -27.5 ㏈c suppression of 6 ㎓ fundamental, -18 ㏈c suppression of 18 ㎓ 3rd harmonic, and the 3 ㏈ output bandwidth of 1,8 ㎓ have been measured.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.34 no.5
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• pp.65-73
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• 2006

When a satellite separates from the launch vehicle, an initial high angular rate or a tip-off rate is generated. B-dot logic is generally used for controlling the initial tip-off rate. However, it has the disadvantage of taking a relatively long time to control the initial tip-off rate. To solve this problem, this paper suggests a new detumbling control method to be able to adapt to micro/nanosatellite with the pitch bias momentum system. Proposed detumbling method was able to control the angular rate within 20 minutes which is significantly reduced compared to conventional methods. Since the previous wheel start-up method cannot be used if the detumbling controller proposed by this paper is used, a method is also proposed for bringing up the momentum wheel speed to nominal rpm while maintaining stability in this paper. The performance of the method is compared and verified through simulation. The overall result shows much faster control time compared to the conventional methods, and achievement of the nominal wheel speed and 3-axes stabilization while maintaining stability.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.450-450
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• 2012

In recent days, advances in ZnO-based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). In particular, the development of high-mobility ZnO-based channel materials has been proven invaluable; thus, there have been many reports of high-performance TFTs with oxide semiconductor channels such as ZnO, InZnO (IZO), ZnSnO (ZTO), and InGaZnO (IGZO). The reliability of oxide TFTs can be improved by examining more stable oxide channel materials. In the present study, we investigated the effects of an ALD-deposited water vapor permeation barrier on the stability of ZnO and HfZnO (HZO) thin film transistors. The device without the water vapor barrier films showed a large turn-on voltage shift under negative bias temperature stress. On the other hand, the suitably protected device with the lowest water vapor transmission rate showed a dramatically improved device performance. As the value of the water vapor transmission rate of the barrier films was decreased, the turn-on voltage instability reduced. The results suggest that water vapor related traps are strongly related to the instability of ZnO and HfZnO TFTs and that a proper combination of water vapor permeation barriers plays an important role in suppressing the device instability.

• Journal of the Korean Magnetics Society
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• v.14 no.4
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• pp.127-130
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• 2004

Magnetic properties and thermal stability by exchange biased perpendicular magnetic anisotropy in (Pd/Co)$_{N}$FeMn multilayer deposited by do magnetron sputtering system are investigated. We measured the perpendicular magnetization curves of (Pd(0.8nm)/Co(0.8nm)$_{5}$FeMn multilayer as function of FeMn thickness and annealing temperature. As FeMn thickness increases from 0 to 21nm, the perpendicular exchange bias(Hex) obtained 127 Oe at FeMn thickness 15nm. As the annealing temperature increases to 24$0^{\circ}C$, the E$_{ex}$ increased from 115 Oe to 190 Oe and disappeared exchange biased perpendicular magnetic anisotropy effect at 33$0^{\circ}C$.

• Journal of IKEEE
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• v.26 no.1
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• pp.77-82
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• 2022

The effect of the bias network on the performance of the W-band power amplifier(PA) was investigated. The performances of the typical RC and radial stub networks were examined, and a hybrid network was proposed for W-band application and its performance was confirmed. To verify this, a W-band PA was designed using a 60-nm GaN pHEMT process. When hybrid networks were applied, the PA had improved stability in all frequency bands, secured about 9 dB of power gain at operating frequencies 87 GHz to 93 GHz, and the maximum PAE was found to be about 12.3% at output power of 26.7 dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.854-861
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• 2008

We have described a high power hybrid envelope elimination and restoration(H-EER) transmitter for IEEE 802.16e Mobile World Interoperability for Microwave Access(WiMAX) using an efficiency optimized power amplifier(PA). The PA has been designed to have maximum PAE at the important power generation $V_{ds}$, region using Nitronex 100-W PEP GaN HEMT. For the high power application, H-EER transmitter should be considered the regenerative oscillation problem due to the PA's bias fluctuation effect and bias modulator stability issue. Therefore, the bias modulator for H-EER transmitter has been designed to suppress the regenerative oscillation. For the interlock experiment, the bias modulator has been built with the efficiency of 72% and peak output voltage of 30 V for the envelope signal with a PAPR of 8.5 dB. The H-EER transmitter for WiMAX application has been achieved a high PAE characteristic, 38.8 % at an output power of 41.25 dBm. By using digital predistortion(DPD) technique, the Relative Constellation Error (RCE) has been satisfied the specification of -34.5 dB. This is the first work at 2.655 GHz high power H-EER transmitter for WiMAX application.

• Korean Chemical Engineering Research
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• v.47 no.1
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• pp.79-83
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• 2009

In this study, the characteristics of amorphous silicon etching for the formation of gate electrodes have been evaluated at the variation of several process parameters. When total flow rates composed of $Cl_2/HBr/O_2$ gas mixtures increased, the etch rate of amorphous silicon layer increased, but critical dimension (CD) bias was not notably changed regardless of total flow rate. As the amount of HBr in the mixture gas became larger, amorphous silicon etch rate was reduced by the low reactivity of Br species. In the case of increasing oxygen flow rate, etch selectivity was increased due to the reduction of oxide etch rate, enhancing the stability of silicon gate etching process. However, gate electrodes became more sloped according to the increase of oxygen flow rate. Higher source power induced the increase of amorphous silicon etch rate and CD bias, and higher bias power had a tendency to increase the etch rate of amorphous silicon and oxide.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.3
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• pp.569-577
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• 1999

A wideband RF receiver for satellite mobile communications system was fabricated and evaluated of performance in low noise amplifier and high gain amplifier. The low noise amplifier used to the resistive decoupling and self-bias circuits. The low noise amplifier is fabricated with both the RF circuits and the self-bias circuits. Using a INA-03184, the high gain amplifier consists of matched amplifier type. The active bias circuitry can be used to provide temperature stability without requiring the large voltage drop or relatively high-dissipated power needed with a bias stabilized resistor. The bandpass filter was used to reduce a spurious level. As a result, the characteristics of the receiver implemented here show more than 55 dB in gain, 50.83 dBc in a spurious level and less than 1.8 : 1 in input and output voltage standing wave ratio(VSWR), especially the carrier to noise ratio is a 43.15 dB/Hz at a 1 KHz from 1537.5 MHz.