Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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W-Band Power Amplifier with Hybrid Bias Network Using 60-nm GaN pHMET Process

하이브리드 바이어스 네트워크가 적용된 W대역 60-nm GaN pHEMT 전력 증폭기

  • Yoo, Jinho (Dept. of Electronic Engineering, Soongsil University) ;
  • Lee, Jaeyong (Dept. of Electronic Engineering, Soongsil University) ;
  • Jang, Seongjin (Dept. of Electronic Engineering, Soongsil University) ;
  • Jung, Hayeon (Dept. of Electronic Engineering, Soongsil University) ;
  • Kim, Kichul (Agency for Defense Development) ;
  • Choi, Jeung Won (Agency for Defense Development) ;
  • Park, Juman (Agency for Defense Development) ;
  • Park, Changkun (Dept. of Electronic Engineering, Soongsil University)
  • Received : 2022.02.24
  • Accepted : 2022.03.25
  • Published : 2022.03.31
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Abstract

The effect of the bias network on the performance of the W-band power amplifier(PA) was investigated. The performances of the typical RC and radial stub networks were examined, and a hybrid network was proposed for W-band application and its performance was confirmed. To verify this, a W-band PA was designed using a 60-nm GaN pHEMT process. When hybrid networks were applied, the PA had improved stability in all frequency bands, secured about 9 dB of power gain at operating frequencies 87 GHz to 93 GHz, and the maximum PAE was found to be about 12.3% at output power of 26.7 dBm.

본 논문에서는 바이어스 네트워크가 W 대역 전력증폭기의 성능에 미치는 영향을 고찰 하였다. 기존의 RC 및 방사형 스터브 네트워크의 성능을 살펴보고, W 대역 적용을 위하여 하이브리드 네트워크를 제안하고 그 성능을 확인 하였다. 이를 검증하기 위하여 60-nm GaN pHEMT 공정을 이용하여 W 대역 전력증폭기를 설계하였다. 하이브리드 네트워크를 적용 할 경우 전력증폭기는 전주파수 대역에서 안정도가 개선되었으며, 동작 주파수 87 GHz부터 93 GHz에서 전력이득 약 9 dB를 확보하였으며, 최고 PAE는 출력전력 26.7 dBm에서 약 12.3%로 확인 되었다.

Keywords

Acknowledgement

This work was supported by Agency for Defense Development(ADD) under Grant UD200018ED.

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