• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.196-196
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• 2003

현재 PDP(Plasma Display Panel) 상판의 유전체층은 저온에서 소성이 가능한 저융점 유리가 요구되기 때문에 융점을 낮추기에 용이한 PbO계가 주 성분으로 사용되어 오고 있으나. 최근 환경오염 등의 문제점으로 인해 Pb-free을 추구하는 새로운 유리조성의 연구가 많이 수행되고 있다. 이에 본 연구는 이미 PDP의 격벽과 봉착용 조성으로 많이 연구되어진 비스무스계 유리를 고려하여 PDP의 투명유전체용 조성을 찾고자 한다. Bi$_2$O$_3$-ZnO-SiO$_2$3원계를 기본으로 하는 유리조성에 유리망목형성제등을 첨가하여 열적특성과 광학적 특성을 조사하였다. 열적특성은 DTA를 이용하여 유리 전이 점(Tg) 및 융점(Tl)등을 측정하였고 TMA를 이용하여 선팽창계수(CTE)를 측정하였으며 유리섬유를 제조한 후 Littleton softening point (Ts)를 측정하였다. 광학적 특성은 페이스트를 제조하여 스크린프린팅 후 54$0^{\circ}C$~$600^{\circ}C$에서 1-2 h동안 소성하여 투광성을 조사하였다. 그 결과로, 열적특성으로는 400~5$50^{\circ}C$의 Tg, 450~$600^{\circ}C$의 Ts 및 5~11$\times$$10^{-6}$K의 CTE 값을 나타 내었고 광학적 특성으로 투광성은 양호한 특성(60% 이상)을 나타내었다. Bi$_2$O$_3$ 계를 현재 PDP의 투명유 전체에 적용시키기에는 유리용융시에 높은 점도와 환원 등의 문제점을 갖고 있지만 열적특성과 광학특성면에서는 가능성을 제시하여 향후 연구를 할 가치가 있다고 본다.

• Transactions on Electrical and Electronic Materials
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• v.8 no.2
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• pp.84-88
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• 2007

[ $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ ] (BZN), $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN), and $Bi_2Cu_{2/3}Nb_{4/3}O_7$ (BCN) pyrochlore thin films were prepared on $Cu/Ti/SiO_2/Si$ substrates by pulsed laser deposition and the micro-structural and electrical properties were characterized for embedded capacitor applications. The BZN, BMN, and BCN films deposited at $25\;^{\circ}C$ and $150\;^{\circ}C$, respectively show smooth surface morphologies and dielectric constants of about $39\;{\sim}\;58$. The high dielectric loss of the films deposited at $150\;^{\circ}C$ compared with films deposited at $25\;^{\circ}C$ was attributed to the defects existing at interface between the films and copper electrode by an oxidation of copper bottom electrode. The leakage current densities and breakdown voltages in 200 nm thick-BMN and BZN films deposited at $150\;^{\circ}C$ are approximately $2.5\;{\times}\;10^{-8}\;A/cm^2$ at 3 V and above 10 V, respectively. Both BZN and BMN films are considered to be suitable materials for embedded capacitor applications.

• Journal of the Korean Ceramic Society
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• v.17 no.3
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• pp.133-140
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• 1980

Nonohmic properties of ZnO ceramics with various small amounts of additives were studied in relation to sintering temperature and additive content. The kinds of additives used were basic additives ($Bi_2O_3$, $BaCO_3$, $MnCO_3$, $Cr_2O_3$) and $KNO_3$ Especially this study has focused on the effects of $KNO_3$ in ZnO ceramics with basic additives. SEM studies indicated that microstructures of ZnO, $KNO_3$ and basic additives showed homogenuous grain size in comparison to ZnO and basic additives compounds. The nonohmic exponent ($\alpha$) in ZnO, $KNO_3$ and basic additives component were measured as high as 40.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1315_1316
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• 2009

ZnO는 비선형 전류전압 특성으로 인해 급작스런 과전류로부터 회로를 보호하는 바리스터로 널리 사용되고 있다. 이러한 바리스터의 전기적 특성 및 미세조직을 제어하기 위하여 다양한 첨가물을 넣은 ZnO 바리스터의 미세구조에는 대부분의 입자에 wurtzite 구조의 결정학적 극성이 바뀌는 inversion boundary (IB)가 존재한다. ZnO의 비선형 전류전압 특성이 반도성의 ZnO 입자간 계면에 형성되는 쇼트키 장벽에 기인함을 감안할 때 계면의 결정화학적 특성에 영향을 주는 IB에 대한 이해는 필수적이다. 본 연구에서 IB가 ZnO 바리스터의 성능에 미치는 영향을 규명하기 위하여 ZnO-$Bi_2O_3$에 각각 $Sb_2O_3$ 또는 $TiO_2$ 를 첨가하여 결정학적 특성이 서로 상반되는 IB를 유도하였고, 첨가량을 조절하여 모든 입자가 IB를 가지도록 하였다. 화학 에칭을 한 시편의 SEM 관찰을 통해 입자의 형상, 크기, 분포 및 IB의 결정학적 특성 등을 분석하였다. 각 시편의 바리스터 특성은 임피던스의 온도 의존성과 상온에서의 전류-전압 특성을 통해 평가하였다. 관찰된 전기적 특성들을 입내 IB의 결정학적 구조와 이로부터 결과되는 입계면의 극성의 차이를 통해 해석하고자 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.365-368
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• 2000

We have studies on the Microstructures and densities as a function of forming pressures and the magnetic properties of the specimens with additive Bi$_2$O$_3$ that sintered at 95$0^{\circ}C$ for 4.5 hours for synthesizing optimal Ni-Cu-Zn ferrite. Green density rose generally as Forming pressure increased from 1.7 ton/cm$^2$to 2.5 ton/cm$^2$and Cold Isostatic Pressure(CIP) method was more effective than Die Pressure(DP) method to high green density. Forming pressure had no influence on apparent density but on the other hand Bi$_2$O$_3$contents were strongly dominant to appaernt density than forming pressure. Bi$_2$O$_3$liquid phases created during sintering process promoted sintering and grain growth so that apparent density, grain size and permeability increased compared to that of the specimens which were sintered with non-additive Bi$_2$O$_3$.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.234-238
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• 1987

In this paper, the used specimen composition was added basic additives ($Bi_2O_3\;lmol%$, $Sb_2O_3\;lmol%$, CoO 0.5 mol%, MnO 0.5mol%) to ZnO powder, and $TiO_2$ (1,2,3,4 mol%) to the above basic composition. It appears that there are four regions of conduction current depended upon the strength of the applied electric field ; Ohimic region, Poole-Frenkel region, Schottky region and Tunneling region. Increasing of $TiO_2mol%$, the breakdown voltages of ZnO ceramic varistors are decreased. The decrease of breakdown voltages was explained with the decrease of potential barrier height. Moreover, V-I characteristics with temperature dependence are decreased with increasing of $TiO_2mol%$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.211-215
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• 2010

Pulsed laser deposition is a very efficient technique for fabricating thin films of complex compounds. In the present work, $Bi_2O_3$-MgO-ZnO-$Nb_2O_5$ (BMZN) pyrochlore thin films were deposited on platinized Si substrates at various temperatures by using pulsed laser deposition technique. These films have been characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM) to investigate their structural, morphological properties. MIM structure was manufactured to analyze di-electrical properties of BMZN thin films. XRD results reveal the thin films deposited at less than $400^{\circ}C$ show only amorphous phase, the crystallized thin films was observed when the thin films were prepared temperature at above $500^{\circ}C$. From AFM, it was known that the thin film grown at $400^{\circ}C$ is the densest. Dielectric constant increased with increasing temperature up to $400^{\circ}C$ at 100 kHz and dramatically decreased at the higher temperature. A aspect of dissipation factor was the exact opposite of dielectric constant. BMZN thin films grown at $400^{\circ}C$ exhibited a high dielectric constant of 60.9, a low dissipation factor of 0.007 at 100 kHz.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.167-167
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• 2002

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.193-195
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• 2005

[ $0.96[Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}TiO_3]+0.04SrTiO_3+0.3wt%Nb_2O_5+0.2wt%La_2O_3+xwt%ZnO$ ], were studied in order to develope the superior piezoelectric properties of Lead-free piezoelectric ceramics. With increasing amount of ZnO addition, density showed the maximum value of 5.79(g/$cm^3$) at 0wt% ZnO addition, and electromechanical coupling factor($k_p$) and dielectric constant decreased, and mechanical quality factor($Q_m$) increased and showed the maximum value of 280 at 0.4wt% ZnO addition.

• 전기의세계
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• v.31 no.6
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• pp.445-449
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• 1982

This Paper describes the influence of additive concentrations and sintering temperature on the surge protection performance in ZnO ceramic varistors. It is found from the experiments that the metal-oxide semiconductors based oi ZnO with an additive incorporation of 0.50% molx(Bi$\_$2/O$\_$3/+MnO+CoO+Cr$\_$2/O$\_$3/+2Sb$\_$2/O$\_$3/) and sintered at 1250.deg. C present excellent V-I characteristics in view of transient surge suppression. Gapless arrester element with aluminum electrodes shows also good reliability against impulse shock and marks a low voltage clamping ratio(V$\_$1KA/V$\_$1mA/<2.0) compared with the conventional SiC varistors.