• Title/Summary/Keyword: BiTe

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Effects of Various Fabrication Routes on Thermoelectric Properties of n-type Bi2Te2.85Se0.15 Alloys (제조공정에 따른 n형 Bi2Te2.85Se0.15합금의 열전성능 평가)

  • Nagarjuna, C.;Shin, D.W.;Lee, M.W.;Lee, S.H.;Hong, S.J.
    • Journal of the Korean Society for Heat Treatment
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    • v.31 no.3
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    • pp.135-142
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    • 2018
  • In this study, we have fabricated n-type $Bi_2Te_{2.85}Se_{0.15}$ compounds by different processing routes such as crushing, milling and mixing respectively. Subsequently, the obtained powders were consolidated by spark plasma sintering (SPS). The phase crystallinity of bulk samples were identified using X-ray diffraction technique. Powder morphology and fracture surface of bulk samples were observed using the scanning electron microscopy (SEM). The Seebeck coefficient and electrical conductivity values were significantly increased for the milling sample than crushing and mixing samples. As a result, the maximum power factor was obtained $2.4mW/mK^2$, which is thrice than that of crushing process. The maximum figure of merit (ZT) of 0.77 was achieved at 400 K for the milling sample. Furthermore, relatively high hardness and density values were noticed for the different processed samples.

Comparative Studies of Different Thermal Consolidation Techniques on Thermoelectric Properties of BiTeSe Alloy (BiTeSe 합금의 열적성형방법에 따른 열전특성)

  • Sharief, P.;Dharmaiah, P.;Lee, C.H.;Ahn, S.S.;Lee, S.H;Son, H.T;Hong, S.J.
    • Journal of the Korean Society for Heat Treatment
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    • v.31 no.3
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    • pp.126-134
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    • 2018
  • In this research, we produced polycrystalline n-type $Bi_2Te_{2.7}Se_{0.3}$ powder using water atomization. To obtain full benefit through water atomized powder, we have implemented spark plasma sintering and hot extrusion for powder compaction. The microstructure and thermoelectric properties were investigated and compared. The average grain size of SPS and extruded bulks were 3.08 and $3.86{\mu}m$ respectively. The extruded material microstructure contains layered grains with less grain boundaries and its counter-part SPS displays dense packed grains with high grain boundaries. Among both bulks, extrusion sample exhibited high power factor (PF) of $2.96{\times}10^{-3}Wm^{-1}K^{-2}$ which is 38% higher than SPS ($2.14{\times}10^{-3}$) bulk sample. Due to variations in grain size and grain boundaries, the SPS bulk shows low thermal conductivity than extruded bulk. However, the extruded bulk sample exhibited a peak ZT of 0.69 at 400 K, which is 19% higher than SPS bulk sample, due to its higher power factor.

Thickness and Annealing Effects on the Thermoelectric Properties of N-type $Bi_2Te_{2.4}Se_{0.6}$ Thin Films (N형 $Bi_2Te_{2.4}Se_{0.6}$ 박막의 열전 특성에 미치는 두께 및 열처리 효과)

  • Kim Il-Ho;Jang Kyung-Wook
    • Journal of the Korean Vacuum Society
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    • v.14 no.3
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    • pp.153-158
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    • 2005
  • The effective mean free path model was adopted to examine the thickness effect on the thermoelectric properties of flash-evaporated n-type $Bi_2Te_{2.4}Se_{0.6}$ thin films. Annealing effects on the electron concentration and mobility were also studied, and their variations were analyzed in conjunction with antisite defects. Seebeck coefficient and electrical resistivity versus inverse thickness showed a linear relationship, and the mean free path was found to be $5120\AA$ Electron mobility was increased by annealing treatment and electron concentration was decreased considerably due to reduction of antisite defects, so that electrical conductivity was decreased and Seebeck coefficient was increased. When annealed at 473k for 1 hour, Seebeck coefficient and electrical conductivity were $-200\;\mu V/k\;and\;510\omega^{-1}cm^{-1}$, respectively. Therefore, the thermoelectric power factor was improved to be $20\times10^{-4}\;W/(mK^2)$.

Characteristics of electrodeposited bismuth telluride thin films with different crystal growth by adjusting electrolyte temperature and concentration

  • Yamaguchi, Masaki;Yamamuro, Hiroki;Takashiri, Masayuki
    • Current Applied Physics
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    • v.18 no.12
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    • pp.1513-1522
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    • 2018
  • Bismuth telluride ($Bi_2Te_3$) thin films were prepared with various electrolyte temperatures ($10^{\circ}C-70^{\circ}C$) and concentrations [$Bi(NO_3)_3$ and $TeO_2:1.25-5.0mM$] in this study. The surface morphologies differed significantly between the experiments in which these two electrodeposition conditions were separately adjusted even though the applied current density was in the same range in both cases. At higher electrolyte temperatures, a dendrite crystal structure appeared on the film surface. However, the surface morphology did not change significantly as the electrolyte concentration increased. The dendrite crystal structure formation in the former case may have been caused by the diffusion lengths of the ions increasing with increasing electrolyte temperature. In such a state, the reactive points primarily occur at the tops of spiked areas, leading to dendrite crystal structure formation. In addition, the in-plane thermoelectric properties of $Bi_2Te_3$ thin films were measured at approximately 300 K. The power factor decreased drastically as the electrolyte temperature increased because of the decrease in electrical conductivity due to the dendrite crystal structure. However, the power factor did not strongly depend on the electrolyte concentration. The highest power factor [$1.08{\mu}W/(cm{\cdot}K^2$)] was obtained at 3.75 mM. Therefore, to produce electrodeposited $Bi_2Te_3$ films with improved thermoelectric performances and relatively high deposition rates, the electrolyte temperature should be relatively low ($30^{\circ}C$) and the electrolyte concentration should be set at 3.75 mM.

Fabrication of a Micro Cooler using Thermoelectric Thin Film (열전박막을 이용한 마이크로 냉각소자 제작)

  • Han, S.W.;Choi, H.J.;Kim, B.I.;Kim, B.M.;Kim, D.H.;Kim, O.J.
    • Proceedings of the KSME Conference
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    • 2007.05a
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    • pp.1459-1462
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    • 2007
  • In general a thermoelectric cooler (TEC) consists of a series of P type and N type thermoelectric materials sandwiched between two wafers. When a DC current passes through these materials, three different effects take place; Peltier effect, Joule heating effect and heat transfer by conduction due to temperature difference between hot and cold plates. In this study we have developed a micro TEC using $Bi_2Te_3$ (N type) and $Bi_{0.5}Sb_{1.5}Te_3$ (P type) thin films. In order to improve that performance of a micro TEC, we made 10 um height TE legs using special PR only for lift-off. We measured COP (coefficient of performance) and temperature difference between hot and cold connectors with current.

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Production Characteristics of Thermoelectric Film Produced by Vacuun Evaporation (진공증착에 의해 제조된 열전 박막의 제조 특성)

  • Kim, Bong-Seo;Jeong, Hyun-Uk;Park, Su-Dong;Lee, Hee-Woong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.865-868
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    • 2004
  • 열 진공 증착법(thermal vacuum evaporation)에 의해 p-형 열전박막을 $3{\times}10^{-4}{\sim}3{\times}10^{-6}$ Torr의 범위에서 유리 기판 위에 제조하였다. 제조된 박막의 전기저항은 고진공일수록 저항이 증가하였으며, $Bi_2Te_3$$Sb_2Te_3$상을 가지고 있었다. 박막의 조성은 기판의 위치에 따라 변화하였고, 원자 번호가 작을수록 위치의 영향이 크고, 반대로 원자번호가 큰 원소는 그 영향이 작았다. 또한 고진공에서 제조된 박막일수록 상대적으로 저진공에 비해 조성의 변화가 적게 나타났다.

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Geochemistry of the Moisan Epithermal Gold-silver Deposit in Haenam Area (해남 모이산 천열수 금은광상의 지구화학적 특성)

  • Moon, Dong-Hyeok;Koh, Sang-Mo;Lee, Gill-Jae
    • Economic and Environmental Geology
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    • v.43 no.5
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    • pp.491-503
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    • 2010
  • Geochemical characteristics of the Moisan epithermal gold-silver deposit with total 140 samples in Haenam area, Jeollanamdo were studied by using multivariate statistical analysis (correlation analysis, factor analysis and cluster analysis). The correlation analysis reveals that Ag, Cu, Bi, Te are highly correlated with Au in the both non-mineralized and mineralized zone. It is resulted from the presence of Au-Ag bearing minerals (electrum, sylvanite, calaverite and stuezite) and non Au-Ag containing minerals (chalcopyrite, tellurobismuthite and bismuthinite). Mo shows relatively much higher correlation at the mineralized zone (0.615) than non-mineralized zone (0.269) which implies Mo content is strongly affected by Au-mineralization. While Mn, Cs, Fe, Se correlated with Au at the nonmineralized zone, they have negative correlation at the mineralized zone. Therefore, they seem to be eluviated elements from the host rock during gold mineralization. Sb is enriched during the gold mineralization showing high correlation at the mineralized zone and negative correlation at the non-mineralized zone. According to the factor analysis, Se, Ag, Cs, Te are the indicators of gold mineralization presence due to the strong affection of gold content in the non-mineralized zone. In the mineralized zone, on the other hand, Mo, Te and Sb, Cu are the indicators of gold and silver mineralization, respectively. While the cluster analysis reveals that Cd-Zn-Pb-S, Bi-Fe-Cu-Mn, Se-Te-Au-Cs-Ag, As-Sb-Ba are the similar behavior elements groups in the non-mineralized zone, Cd-Zn-Mn-Pb, Fe-S-Se, As-Bi-Cs, Ag-Sb-Cu, Au-Te-Mo are the similar behavior elements groups in the mineralized zone. Using multivariate statistical analysis as mentioned above makes it possible to compare the behavior of presented minerals and difference of geochemical characteristics between mineralized and non-mineralized zone. Therefore, it will be expected a useful tool on the similar type of mining exploration.

Effects of Hydrogen Reduction in Microstructure, Mechanical and Thermoelectric Properties of Gas Atomized n-type Bi2Te2.7 Se0.3 Material

  • Rimal, Pradip;Yoon, Sang-Min;Kim, Eun-Bin;Lee, Chul-Hee;Hong, Soon-Jik
    • Journal of Powder Materials
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    • v.23 no.2
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    • pp.126-131
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    • 2016
  • The recent rise in applications of thermoelectric materials has attracted interest in studies toward the fabrication of thermoelectric materials using mass production techniques. In this study, we successfully fabricate n-type $Bi_2Te_{2.7}Se_{0.3}$ material by a combination of mass production powder metallurgy techniques, gas atomization, and spark plasma sintering. In addition, to examine the effects of hydrogen reduction in the microstructure, the thermoelectric and mechanical properties are measured and analyzed. Here, almost 60% of the oxygen content of the powder are eliminated after hydrogen reduction for 4 h at $360^{\circ}C$. Micrographs of the powder show that the reduced powder had a comparatively clean surface and larger grain sizes than unreduced powder. The density of the consolidated bulk using as-atomized powder and reduced atomized powder exceeds 99%. The thermoelectric power factor of the sample prepared by reduction of powder is 20% better than that of the sample prepared using unreduced powder.

Design of In Plane P-N Junction Thin-Film Thermoelectric Device (In Plane 방식의 P-N Junction 박막열전소자 제작)

  • Kwon, Sung-Do;Kim, Eun-Jin;Lee, Yun-Ju;Yoon, Seok-Jin;Ju, Byeong-Kwon;Kim, Jin-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.178-178
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    • 2008
  • 초소형 박막의 열전 발전모듈은 작은 부피와 한번 설치시 교체없이 지속적인 전원공급으로 소형의 센서 노드에 전원으로 각광 받고 있다. 이에 본 논문에서는 In Plane방식의 PIN Junction의 박막형 열전소자를 제작하여 보았다. 열전 박막인 P-type의 $BiSbTe_3$와 N-type의 $Bi_2Te_3$은 (001)GaAs 기판에 MOCVD(Metal Organic Chemical Vapour Deposition)방식으로 성장하였으며 전극으로는 E-Beam Evaporator를 이용하여 금(Au), 알루미늄(Al)을 사용하였다. 열전박막의 두께는 MOCVD의 성장시간과 온도 MO-x 가스의 압력으로 조절하여 주었다. 제작결과 1Pairs 당 약 $63{\mu}V$/K을 나타내었다.

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Design of P-N Junction Type Thin-Film Thermoelectric Device and their Device Characteristics (P-N Junction Type 박막열전소자제작 및 특성)

  • Kwon, Sung-Do;Song, Hyun-Cheol;Jeong, Dae-Yong;Yoon, Seok-Jin;Ju, Byeong-Kwon;Kim, Jin-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.142-142
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    • 2007
  • Micro thermoelectric generator has been attractive for the alternative power source to operate the wireless sensor node. In this paper, we designed the column-type micro thermoelectric device and their device characteristics were measured. n-type Bi2Te3 and p-type BiSbTe3 thermoelectric thin films were grown on (001) GaAs substrates by metal organic chemical vapour deposition (MOCVD) and they were pattemed. The height of thermoelectric film were controlled by the deposition time, temperature and MO-x gas pressure. Seebeck coefficient was measured at room temperature and hole concentration and electrical resistivity of thermoelectric film were also characterized.

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