• Journal of Korean Society of Water and Wastewater
• /
• v.32 no.4
• /
• pp.349-355
• /
• 2018

This study interrogated multi-layer heterojunction anodes were interrogated for potential applications to water treatment. The multi-layer anodes with outer layers of $SnO_2/Bi_2O_3$ and/or $TiO_2/Bi_2O_3$ onto $IrO_2/Ta_2O_5$ electrodes were prepared by thermal decomposition and characterized in terms of reactive chlorine species (RCS) generation in 50 mM NaCl solutions. The $IrO_2/Ta_2O_5$ layer on Ti substrate (Anode 1) primarily served as an electron shuttle. The current efficiency (CE) and energy efficiency (EE) for RCS generation were significantly enhanced by the further coating of $SnO_2/Bi_2O_3$ (Anode 2) and $TiO_2/Bi_2O_3$ (Anode 3) layers onto the Anode 1, despite moderate losses in electrical conductivity and active surface area. The CE of the Anode 3 was found to show the highest RCS generation rate, whereas the multi-junction architecture (Anode 4, sequential coating of $IrO_2/Ta_2O_5$, $SnO_2/Bi_2O_3$, and $TiO_2/Bi_2O_3$) showed marginal improvement. The microscopic observations indicated that the outer $TiO_2/Bi_2O_3$ could form a crack-free layer by an incorporation of anatase $TiO_2$ particles, potentially increasing the service life of the anode. The results of this study are expected to broaden the usage of dimensionally stable anodes in water treatment with an enhanced RCS generation and lifetime.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04b
• /
• pp.95-95
• /
• 2009

Single-crystalline Bi nanowires have motivated many researchers to investigate novel quasi-one-dimensional phenomena such as the wire-boundary scattering effect and quantum confinement effects due to their electron effective mass (~0.001 me). Single crystalline Bi nanowires were found to grow on as-sputtered films after thermal annealing at $270^{\circ}C$. This was facilitated by relaxation of stress between the film and the thermally oxidized Si substrate that originated from a mismatch of the thermal expansion. However, the method is known to produce relatively lower density of nanowires than that of other nanowire growth methods for device applications. In order to increase density of nanowire, we propose a method for enhancing compressive stress which is a driving force for nanowire growth. In this work, we report that the compressive stress can be controlled by modifying a substrate structure. A combination of photolithography and a reactive ion etching technique was used to fabricate patterns on a Si substrate. It was found that the nanowire density of a Bi film grown on $100{\mu}m{\times}100{\mu}m$ pattern Si substrate increased over seven times higher than that of a Bi sample grown on a normal substrate. Our results show that density of nanowire can be enhanced by sidewall effect in optimized proper pattern sizes for the Bi nanowire growth.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.5
• /
• pp.443-447
• /
• 2009

Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_{2}Te_{3}$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $5{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_{2}Te_{3}$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_{2}Te_{3}$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3 ${\mu}m$ is obtained at the temperature difference of 45 K.

• Journal of Sensor Science and Technology
• /
• v.5 no.6
• /
• pp.25-34
• /
• 1996

In this paper, we have designed signal conditioning circuitry for piezoresistive pressure sensor. Signal conditioning circuitry consists of voltage reference circuit for sensor driving voltage and instrument amplifier for sensor signal amplification. Signal conditioning circuitry is simulated using HSPICE in a single poly double metal $1.5\;{\mu}m$ BiCMOS technology. Simulation results of band-gap reference circuit showed that temperature coefficient of $21\;ppm/^{\circ}C$ at the temperature range of $0\;{\sim}\;70^{\circ}C$ and PSRR of 80 dB. Simulation results of BiCMOS amplifier showed that dc voltage gain, offset voltage, CMRR, CMR and PSRR are outperformed to CMOS and Bipolar, but power dissipation and noise voltage were more improved in CMOS than BiCMOS and Bipolar. Designed signal conditioning circuitry showed high input impedance, low offset and good CMRR, therefore, it is possible to apply sensor and instrument signal conditioning circuitry.

• Geomechanics and Engineering
• /
• v.33 no.3
• /
• pp.279-289
• /
• 2023

Brittleness index (BI) is an important property of rocks because it is a good index to predict rockburst. Due to its importance, several empirical and soft computing (SC) models have been proposed in the literature based on the punch penetration test (PPT) results. These models are very important as there is no clear-cut experimental means for measuring BI asides the PPT which is very costly and time consuming to perform. This study used a novel Multivariate Adaptive regression spline (MARS), M5P, and white-box ANN to predict the BI of rocks using the available data in the literature for an improved BI prediction. The rock density, uniaxial compressive strength (σ_c) and tensile strength (σ_t) were used as the input parameters into the models while the BI was the targeted output. The models were implemented in the MATLAB software. The results of the proposed models were compared with those from existing multilinear regression, linear and nonlinear particle swarm optimization (PSO) and genetic algorithm (GA) based models using similar datasets. The coefficient of determination (R²), adjusted R² (Adj R²), root-mean squared error (RMSE) and mean absolute percentage error (MAPE) were the indices used for the comparison. The outcomes of the comparison revealed that the proposed ANN and MARS models performed better than the other models with R² and Adj R² values above 0.9 and least error values while the M5P gave similar performance to those of the existing models. Weight partitioning method was also used to examine the percentage contribution of model predictors to the predicted BI and tensile strength was found to have the highest influence on the predicted BI.

• Journal of Sensor Science and Technology
• /
• v.23 no.6
• /
• pp.368-376
• /
• 2014

In order to measure the segmental impedance of the body, a bioelectrical impedance measurement system (BIMS) using multi-frequency applying method and two-electrode method was implemented in this study. The BIMS was composed of constant current source, automatic gain control, and multi-frequency generation units. Three experiments were performed using the BIMS and a commercial impedance analyzer (CIA). First, in order to evaluate the performance of the BIMS, four RC circuits connected with a resistor and capacitor in serial and/or parallel were composed. Bioelectrical impedance (BI) was measured by applying multi-frequencies -5, 10, 50, 100, 150, 200, 300, 400, and 500 KHz - to each circuit. BI values measured by the BIMS were in good agreement with those obtained by the CIA for four RC circuits. Second, after measuring BI at each frequency by applying multi-frequency to the left and right forearm and the popliteal region of the body, BI values measured by the BIMS were compared to those acquired by the CIA. Third, when the distance between electrodes was changed to 1, 3, 5, 7, 9, 11, 13, and 15 cm, BI by the BIMS was also compared to BI from the CIA. In addition, BI of extracellular fluid (ECF) was measured at each frequency ranging from 10 to 500 KHz. BI of intracellular fluid (ICF) was calculated by subtracting BI of ECF measured at 500 kHZ from BI measured at seven frequencies ranging from 50 to 500 KHz. BI of ICF and ECF decreased as the frequency increased. BI of ICF sharply decreased at frequencies above 300 KHz.

• Honam Mathematical Journal
• /
• v.39 no.4
• /
• pp.591-601
• /
• 2017

In this paper, by means of the $S{\breve{a}}l{\breve{a}}gean$ operator, we introduce a new subclass $\mathcal{B}^{m,n}_{\Sigma}({\gamma};{\varphi})$ of analytic and bi-univalent functions in the open unit disk $\mathbb{U}$. For functions belonging to this class, we consider Fekete-$Szeg{\ddot{o}}$ inequalities.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
• /
• 2000.02a
• /
• pp.58-59
• /
• 2000

The influence of voltage lead and tape arrangements on self-field losses was investigated by using a 1.5m long Bi-2223 tape. Experimental results show that the measured losses are strongly dependent on voltage lead configurations but not contact positions. The losses are independent on frequencies below critical current of the tape. It menas that the self-field losses are purely hysteretic.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.270-274
• /
• 2002

We have developed a new COG technique using flip chip solder joining technology for excellent resolution and high quality LCD panels. Using the eutectic Bi-Sn and the eutectic In-Ag solder bumps of 50-80 ${\mu}m$ pitch sizes, a ultrafine interconnection between IC and glass substrate was successfully made at or below $160^{\circ}C$. The contact resistance and reliability of Bi-Sn solder joint showed the superiority over the conventional ACF bonding.

• Electrical & Electronic Materials
• /
• v.4 no.4
• /
• pp.293-303
• /
• 1991

소결 후 냉각 및 Annealing이 Bi(Pb)SrCaCuO계 초전도체의 특성에 미치는 영향에 대해 연구하였다. 소결 후 시편을 500[.deg.C]에서 5[hr] Annealing함으로써 1)미세조직이 치밀화 되었으며 고온상의 체적비가 증가하였다. 2)임계온도 및 전류밀도 특성이 향상되었다.