• 한국초전도학회:학술대회논문집
• /
• v.15
• /
• pp.69-69
• /
• 2005

• Electrical & Electronic Materials
• /
• v.10 no.5
• /
• pp.425-433
• /
• 1997

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 82$0^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0$\times$10$^{-6}$ and 2.3$\times$10$^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785$^{\circ}C$. Whereas, PO$_3$dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$_{c}$(onset) of about 90 K and T$_{c}$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$was observed in all of the obtained films.lms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.304-307
• /
• 2001

High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, $T_{sub}$, and ozone gas pressures, $PO_3$. The correlation diagrams of the BSCCO phases appeared against $T_{sub}$ and $PO_3$ are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi220l and Bi2223 phases as well as Bi2212 one come out as stable phases depending on $T_{sub}$ and $PO_3$. From these results, the thermodynamic evaluations of ${\Delta}H$ and ${\Delta}S$ S, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase are performed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.304-307
• /
• 2001

High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, T$\sub$sub/, and ozone gas pressures, PO$_3$. The correlation diagrams of the BSCCO Phases appeared against T7ub and PO3 are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 phases as well as Bi2212 one come out as stable Phases depending on T$\sub$sub/ and PO$_3$. From these results, the thermodynamic evaluations of ΔH and ΔS, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase are performed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.1
• /
• pp.64-68
• /
• 2001

High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, T$\_$sub/, and ozone gas pressures, PO$_3$. The correlation diagrams of the BSCCO phases appeared against T$\_$sub/ and PO$_3$ are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 phases as well as Bi2212 one come out as stable phases depending on T$\_$sub/ and PO$_3$. From these results, the thermodynamic evaluations of ΔH and ΔS, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase are performed.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2007.11a
• /
• pp.21.2-21.2
• /
• 2007

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.486-489
• /
• 2002

Temperature(T) dependence of the sheet resistance( $R_{$\square$}$) has been investigated on the c-axis oriented thin films of the (Bi2212/Bi2201) mixed crystal with different molar fractions. The $R_{$\square$}$-T superconducting characteristic deteriorated with reduction of the Bi2212 fraction, and almost disappears at 48 mol% where a superconductor-to-insulator transition took place, with the resistance on the normal state, RN, reaching 4.l㏀ at 80 K. This $R_{N}$ value is close to the universal quantum number, h/(2e)$^2$≡6.5㏀ predicted by the Kosterlitz-Thouless(KT) transition theory. The $R_{$\square$}$-T characteristics of the 48 mol% thin film can be elucidated as a competitive process of KT transition brought about by charge or vortex in the two-dimensional layer structure.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.474-477
• /
• 2002

We performed a continuous heat treatment experiment for long Si$_2$Sr$_2$CaCuO$_{x}$ (Bi2212) superconductor tapes on copper substrates. A precursor that contains a mixture of Bi$_2$O$_3$, SrCO$_3$, and CaCO$_3$ powders was prepared and screen-printed on Cu tapes. The screen- printed tapes were thermally treated by consecutive processes with various temperature settings using an air-filled tube furnace. The diffraction patterns and the microstructures of the high temperature superconductor thick films were analyzed by X-ray diffractometry (XRD) and optical Microscopy respectively, and the critical temperatures of the superconducting thick films were measured. The critical temperatures of the superconducting films were measured to be about 77K, and the films'crystallographic c-axes were confirmed to be normal to the film surfaces by XRD and morphology observation. We also observed that the thick superconducting layer is formed and aligned on the copper substrate via partial melted state that consists of a liquid phase and a secondary phase.e.

• Progress in Superconductivity
• /
• v.10 no.1
• /
• pp.45-49
• /
• 2008

For the development of superconducting fault current limiters (SFCLs), fault current limiting elements were fabricated out of Bi-2212 bulk tubes and tested. The SFCL elements consisted of tube shaped Bi-2212 bulks and metal shunts for the stabilizers. Firstly, the Bi-2212 bulk tubes were processed based on a design of monofilar coils in order to acquire large resistance and high voltage rating. 300 mm-long Bi-2212 tubes were designed to have the current path of 410 cm in length with 24 turns and 41 mm in diameter. The processed monofilar coil, as designed, had 300 A $I_c$ at 77 K. The fabricated superconducting monofilar coils were affixed to Cu-Ni alloy as that of stabilizers. The Cu-Ni alloys were processed to have the same shape of the superconducting monofilar coils. The Cu-Ni coil had resistivity of 32 ${\mu}{\Omega}$-cm at 77 K and 37 ${\mu}{\Omega}$-cm at 300 K. The metal shunts were attached to the outside of the Bi-2212 monofilar coil by a soldering technique. After the terminals made of copper were attached to both ends of the superconductor-metal shunt composite, the gap between the turns and the surface of the elements was filled with an epoxy and a dense mesh made of FRP in order to enhance the mechanical strength. The completed SFCL elements went through fault tests, and we confirmed that the voltage rating of 143 $V_{rms}$ (E =0.35 $V_{rms}$/cm) could be accomplished.

• Bulletin of the Korean Chemical Society
• /
• v.16 no.2
• /
• pp.84-86
• /
• 1995