• Journal of Powder Materials
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• v.20 no.5
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• pp.345-349
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• 2013

Carbon nanotube-dispersed bismuth telluride matrix (CNT/$Bi_2Te_3$) nanopowders were synthesized by chemical routes followed by a ball-milling process. The microstructures of the synthesized CNT/$Bi_2Te_3$ nanopowders showed the characteristic microstructure of CNTs dispersed among disc-shaped $Bi_2Te_3$ nanopowders with as an average size of 500 nm in-plane and a few tens of nm in thickness. The prepared nanopowders were sintered into composites with a homogeneous dispersion of CNTs in a $Bi_2Te_3$ matrix. The dimensionless figure-of-merit of the composite showed an enhanced value compared to that of pure $Bi_2Te_3$ at the room temperature due to the reduced thermal conductivity and increased electrical conductivity with the addition of CNTs.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.480-481
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• 2006

The n-type $(95%Bi_2Te_3-5%Bi_2Se_3)$ compound was newly fabricated by gas atomization and hot extrusion, which is considered to be a mass production technique of this alloy. The effect of powder size on thermoelectric properties of 0.04% $SbI_3$ doped $95%Bi_2Te_3-5%Bi_2Se_3$ alloy were investigated. Seebeck coefficient $({\alpha})$ and Electrical resistivity $(\rho)$ increased with increasing powder size due to the decrease in carrier concentration by oxygen content. With increasing powder size, the compressive strength of $95%Bi_2Te_3-5%Bi_2Se_3$ alloy was increased due to the relative high density. The compound with ${\sim}300\;{\mu}m$ size shows the highest power factor among the four different powder sizes. The rapidly solidified and hot extruded compound using $200[\sim}300{\mu}m$ powder size shows the highest compressive strength.

• Korean Journal of Metals and Materials
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• v.47 no.4
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• pp.248-255
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• 2009

A micro thermoelectric device was processed by electroplating the n-type Bi-Te nanowires and ptype Sb-Te nanowires into an alumina template with 200 nm pores. Power generation characteristics of the micro devices composed of the Bi-Te nanowires, the Sb-Te nanowires, and both the Bi-Te and the Sb-Te nanowires were analyzed with applying a temperature difference of $40^{\circ}C$ across the devices along the thickness direction. The n-type Bi-Te and the p-type Sb-Te nanowire devices exhibited thermoelectric power outputs of $3.8{\times}10^{-10}W$ and $4.8{\times}10^{-10}W$, respectively. The output power of the device composed of both the Bi-Te and the Sb-Te nanowires decreased to $1.4{\times}10^{-10}W$ due to a large electrical resistance of the Cu electrode connecting the Bi-Te nanowire array with the Sb-Te nanowire array.

• Korean Journal of Materials Research
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• v.6 no.9
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• pp.931-936
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• 1996

비휘발성 메모리 소자에의 적용을 위한 SrBi2Ta2O9(SBT)박막이 고순도의 Sr, Bi, Ti 금속타겟을 사용하여 Pt/Ti/SiO2/Si 기판 위에 reactive sputtering 법에 의해 증착되었다. 조성의 영향을 평가하기 위하여 Bi 타겟에 인가되는 전원의 변화와 열처리에 따른 C-F(capacitance-frequency), P-E(polarization-electric field), I-V(current-voltage)등의 전기적 특성이 조사되었다. Bi의 양이 증가함에 따라 Bi layer 구조를 나타내는 (105)회절 피크가 증가하였고 $700^{\circ}C$, 산소분위기에서 1시간 동안 열처리후 Sr과 Bi가 심하게 휘발되었으며 박막의 미세구조는 다공질이 되었다. 이러한 이유로 열처리된 박막의 누설 전류 밀도는 증가하였다. 열처리된 시편의 조성은 거의 화학양론비를 이루었으며 4.5$\mu$C/$\textrm{cm}^2$의 Pr값을 갖는 강유전(ferroelectric)특성을 나타내었다.

• Journal of Powder Materials
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• v.12 no.6 s.53
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• pp.387-392
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• 2005

The p-type semiconductor $Bi_2Te_3-Sb_2Te_3$ thermoelectric materials were fabricated by melting, milling and sintering process and their thermoelectric properties were characterized. The compound materials were ball-milled with milling time and the powders were sintered by spark plasma sintering process. The ball milled powders had equiaxial shape and approedmately $1\~3{\mu}m$ in size. The figure of meritz of sintered thermoelectric materials decreased with milling time because of lowered electrical resistivity. The thermoelectric properties of $Bi_2Te_3-Sb_2Te_3$ materials have been discussed in terms of electrical property with ball mill process.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.41-49
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• 2008

Thermoelectric properties of the n-type Bi-Te and the p-type Bi-Sb-Te films were measured and the growth behaviors of the electrodeposited Bi-Te and Bi-Sb-Te nanowires were characterized. Filling ratios of 81% and 77% were obtained for electrodeposition of the Bi-Te and the Bi-Sb-Te nanowires, respectively, into the nano pores of 200 nm-diameter of an alumina template. A thermoelectric module, composed of the Bi-Te nanowires and the Bi-Sb-Te nanowires was processed by electrodeposition, and a resistance value of $15{\Omega}$ was measured between the Ni electrodes formed on the Bi-Te nanowires and the Bi-Sb-Te nanowires of the module.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.563-567
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• 2011

We report the structural characterization of $Bi_xZn_{1-x}O$ thin films grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. By increasing the Bi flux during the growth process, $Bi_xZn_{1-x}O$ thin films with various Bi contents (x = 0~13.17 atomic %) were prepared. X-ray diffraction (XRD) measurements revealed the formation of Bi-oxide phase in (Bi)ZnO after increasing the Bi content. However, it was impossible to determine whether the formed Bi-oxide phase was the monoclinic structure ${\alpha}-Bi_2O_3$ or the tetragonal structure ${\beta}-Bi_2O_3$ by means of XRD ${\theta}-2{\theta}$ measurements, as the observed diffraction peaks of the $2{\theta}$ value at ~28 were very close to reflection of the (012) plane for the monoclinic structure ${\alpha}-Bi_2O_3$ at 28.064 and the reflection of the (201) plane for the tetragonal structure ${\beta}-Bi_2O_3$ at 27.946. By means of transmission electron microscopy (TEM) using a diffraction pattern analysis and a high-resolution lattice image, it was finally determined as the monoclinic structure ${\alpha}-Bi_2O_3$ phase. To investigate the distribution of the Bi and Bi-oxide phases in BiZnO films, elemental mapping using energy dispersive spectroscopy equipped with TEM was performed. Considering both the XRD and the elemental mapping results, it was concluded that hexagonal-structure wurtzite $Bi_xZn_{1-x}O$ thin films were grown at a low Bi content (x = ~2.37 atomic %) without the formation of ${\alpha}-Bi_2O_3$. However, the increased Bi content (x = 4.63~13.17 atomic %) resulted in the formation of the ${\alpha}-Bi_2O_3$ phase in the wurtzite (Bi)ZnO matrix.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.23-23
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• 2009

It has been challenging to increase the thermoelectric figure of merit ($ZT=S^2{\sigma}T/\kappa$) of materials, which determine the efficiency of thermoelectric devices, because the three parameters Seebeck coefficient (S), electrical conductivity ($\sigma$), and thermal conductivity ($\kappa$) of bulk materials are inter-dependent. With the development of nanotechnology, ZT values of nanostructured materials are predicted to be enhanced by classical size effects and quantum confinement effects. In particular, Bi nanowires were suggested as one of ideal thermoelectric materials due to the expected quantum confinement effects for the simultaneous increase in Sand. In this work, we have investigated the thermal conductivity of individual single crystalline Bi nanowires with d = 98 nm and d = 327 nm in the temperature range 40 - 300 K using MEMS devices. The for the Bi nanowire with d = 98 nm was observed to be ~ 1.6 W/m-K at 300 K, which is much lower than that of Bi bulk (8 W/m-K at 300 K). This indicates that the thermal conductivity of the Bi suppressed due to enhanced surface boundary scattering in one-dimensional structures. Our results suggest that Bi nanowires grown by stress-induced method can be used for high-efficiency thermoelectric devices.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.89-94
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• 2010

Bi-Te films were processed by coevaporation of Bi and Te dual sources with variations of the mole ratio of the Bi and Te evaporation sources, and thermoelectric properties of the coevaporated Bi-Te films were characterized. The coevaporated Bi-Te films were n-type semiconductors and exhibited Seebeck coefficients of $-60{\sim}-80{\mu}V/K$. The Terich Bi-Te film, processed with Bi and Te dual sources of 30 mol% Bi : 70 mol% Te ratio, exhibited a power factor of $5{\times}10^{-4}W/m-K^2$. On the other hand, a power factor of $17.7{\times}10^{-4}W/m-K^2$ was obtained for the Bi-rich film coevaporated using Bi and Te dual sources of 90 mol% Bi : 10 mol% Te ratio.

• Korean Journal of Materials Research
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• v.27 no.3
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• pp.144-148
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• 2017

The effects of an excess of Bi on the piezoelectric and dielectric properties of $0.60Bi_{1+x}FeO_3-0.40BaTiO_3$ (x = 0, 0.01, 0.03, 0.05, 0.07) were investigated. The ceramics were processed through a conventional solid state reaction method and then quenched after sintering at different temperatures in the range of $980{\sim}1070^{\circ}C$. A single perovskite structure without any secondary phase was confirmed for all compositions and temperatures. It was found that excess Bi reduced the sintering temperatures, acted as a sintering aid and enhanced the properties in combination with quenching. Curie temperature ($T_C$) was found to slightly increase due to the presence of excess Bi; electrical properties were also improved by quenching. At x = 0.03 and $1030^{\circ}C$, remnant polarization ($2P_r$) was as high as $45.4{\mu}C/cm^2$ and strain at 40 kV/cm was up to 0.176 %.