• 제목/요약/키워드: Bi-Metal

검색결과 355건 처리시간 0.029초

PIFA구조를 가지는 등방성 RFID 메탈 태그 안테나 (A Design of Isotropic RFID Metal Tag Antenna with a PIFA Structure)

  • 윤정미;정진욱
    • 한국정보전자통신기술학회논문지
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    • 제2권2호
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    • pp.57-62
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    • 2009
  • 본 논문에서는 금속체에 태그를 부착하였을 경우에도 태그 안테나가 전방향성 방사패턴을 갖고 동작하는 PIFA 형 RFID 금속 태그 안테나를 제안하였다. 안테나는 본체와 급전부, 수직 패치와 접지면으로 되어 있으며, 안테나를 소형화시키기 위해 본체와 접지면 사이에 높은 유전율을 가지는 기판을 삽입하였다. 본체는 급전부를 중심으로 대칭적인 구조를 가져 안테나에 흐르는 전류를 반대 방향으로 흐르도록 하였다. 시뮬레이션 결과 제안된 안테나의 임피던스 대역폭 ($S_{11}$ < -10 dB)은 20 MHz (900 ~ 920 MHz)를 나타내었고, 최대 복사 이득은 중심 주파수 912 MHz에서 공기 중과 금속 물체에 부착하였을 때 각각 -10 dBi와 -15 dBi를 가졌다. 또한 이득 편차가 각각 6 dB 이하를 만족시켜 제안된 안테나가 전방향성 복사 패턴을 가지고 동작하는 것을 알 수 있다.

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고 탄화수소 개질을 위한 Pt-Ru, Pt-Ni 이원금속촉매에 관한 연구 (Pt-Ru, Pt-Ni bi-metallic catalysts for heavy hydrocarbon reforming)

  • 이상호;배중면
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 추계학술대회 초록집
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    • pp.97.2-97.2
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    • 2011
  • Pt-Ru and Pt-Ni bimetallic catalysts were prepared and tested for heavy hydrocarbon reforming. Metals were supported on CGO($Ce_{0.8}Gd_{0.2}O_{2.0-x}$) by incipient wetness method. The prepared catalysts were characterized by Temperature programmed reduction(TPR). Oxidative steam reforming of n-dodecane was conducted to compare the activity of the catalysts. The reforming temperature was varied from $500^{\circ}C$ to $800^{\circ}C$ at fixed $O_2$/C of 0.3, $H_2O$/C of 3.0 and GHSV of 5,000/h.Reduction peaks of metal oxide, surface CGO and bulk CGO were detected. Reduction temperature of metal oxide decreased over the bi-metallic catalysts. It is considered that interaction between metals leads to decrease interaction between metal and oxygen. On the other hands, reduction temperatures of surface CGO were dectected in the order of Pt-Ru > Pt-Ni > Pt. low reduction temperatures of surface CGO indicates the low activation energy for oxygen ion conduction to metal. Oxygen ion conduction is known as de-coking mechanism of ionic conducting supports such as CGO. In activity test, fuel conversion was in the same order of Pt-Ru > Pt-Ni > Pt. Especially, 100% of fuel conversion was obtained over Pt-Ru catalysts at $500^{\circ}C$.

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MOCVD를 이용한 $BiSbTe_3$ 박막성장 및 열전소자 제작

  • 권성도;윤석진;주병권;김진상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.425-425
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    • 2008
  • Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_2Te_3$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $4{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_2Te_3$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_2Te_3$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3mW is obtained at the temperature difference of 45K. We provide a promising approach for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which can employ nanostructures for high thermoelectric properties.

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Bi-metal을 이용한 광섬유 단주기 격자의 온도 보상 (Temperature Compensation of Fiber Bragg Grating Using Bi-metal)

  • 송종섭;한원택;백운출;정영주
    • 한국광학회:학술대회논문집
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    • 한국광학회 2003년도 제14회 정기총회 및 03년 동계학술발표회
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    • pp.332-333
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    • 2003
  • Optical Add/Drop Multiplexer (OADM)은 WDM, 즉 파장분할을 이용하여 보다 많은 정보를 보다 빠르게 전송할 수 있는 광통신 시스템에서 가장 중요한 소자 중의 하나이다. WDM (특히, DWDM) 시스템에서는 광신호의 전송 대역이 파장 영역에서 0.8 nm 정도의 매우 좁은 간격으로 배치되기 때문에, 파장 가감을 위한 광필터들은 높은 파장 정확성과 환경적 조건에 대한 안정성을 가져야만 한다. 그러나 광섬유 단주기 격자의 온도 의존성은 일반적으로 0.01 nm/$^{\circ}C$ 정도로 너무 크기 때문에 WDM 시스템에서 응용되기 위해서는 패키징을 통한 온도 보상이 필요하다. (중략)

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유기쌍안정소자의 구조가 메모리특성에 미치는 영향 (Effects of structure of Organic Bi-stable Device on the memory characteristics)

  • 이재준;공상복;황성범;송정근
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2006년도 하계종합학술대회
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    • pp.483-484
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    • 2006
  • In this paper, we fabricated the organic bi-stable devices under the different condition from the other groups and analyzed the electrical characteristics. Then we investigated the effects of the device structure such as organic layer thickness, middle metal layer thickness and middle metal layer deposition rate on the memory characteristics.

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이종재료 금속조인트의 굽힘에 의한 잔류응력 해석 (Residual Stress Analysis in Bi-material Metal Joint under Bending Moment by Finite Element Method)

  • 백태현;정걸;박태근
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2005년도 추계학술대회 논문집
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    • pp.448-451
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    • 2005
  • It was observed that after unloading or removal of the load from the specimen subjected to bending stress, partial or full elastic spring back occurred and considerable stresses have resulted while plastic deformation was considered. ABAQUS is a suite of powerful engineering simulation programs, based on the finite element method. In this paper, it was used as the main tool to analyze elastic and plastic deformations of hi-material metal joint. In the case of elastic deformations, the results were comparable to the theoretical data. Plastic deformations and residual stresses of hi-material metal joint under bending moment were obtained by ABAQUS; where the theory needs to be studied and improved further to verify the results.

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Controlling the initial conditions of precursor powders and its effects on the phase evolution and $J_c$ properties of Bi-2223/Ag tapes

  • Jiang, C.H;Yoo, J.M;Kim, H.D;Kang, S.C;Chung, H.S;Wang, Y.Z;Ko, J.W;Qiao, G.W
    • Progress in Superconductivity
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    • 제3권1호
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    • pp.91-94
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    • 2001
  • By varying fabricating process, precursor powders with different initial conditions were prepared. Subsequently, Bi-2223/Ag tapes were made through these powders. The effects of precursor powders on the phase evolution and Jr properties of Bi-2223/Ag tapes were studied along with several thermomechanical cycles. Our results showed that the initial conditions of precursor powders could strongly influence the phase formation rate and $J_{c}$ value in final tapes. The factors of precursor powders that influence the phase formation and $J_{c}$ of Bi-2223/Ag tapes must be studied and optimized in combination.ion.

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Corrosion Characteristics of HT-9 in 500℃ and 650℃ Pb-Bi Liquid Metal

  • Song, T.Y.;Cho, C.H.
    • Corrosion Science and Technology
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    • 제5권3호
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    • pp.94-98
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    • 2006
  • The next generation nuclear power reactor will use Pb-Bi as the cooling material. The steel structure materials such as HT-9 used in the reactor suffer from corrosion when they are exposed to high temperature Pb-Bi. Therefore corrosion should be prevented to use Pb-Bi as the coolant material without any safety problem. One method is to control the oxygen content in Pb-Bi. An appropriate amount of oxygen in Pb-Bi can produce a thin oxide layer on steel, and this layer protects the steel from corrosion attack. Since the required oxygen content in Pb-Bi is in the range of $10^{-5}$ to $10^{-7}$ wt%, this small oxygen content can be controlled by flowing a mixture of hydrogen gas and water vapor. The stagnant corrosion test of HT-9 samples was performed by controlling the oxygen content up to 2,000 hours. The corrosion behavior of HT-9 was analyzed at the temperatures of $500^{\circ}C$ and $650^{\circ}C$ with a reduced condition and a oxygen content of $10^{-6}$ wt%.

(Bi,La)$Ti_3O_12/$ 강유전체 물질을 갖는 전계효과형 트랜지스터의 제작과 특성연구 (Preparation and Properties of Field Effect Transistor with (Bi,La)$Ti_3O_12/$ Ferroelectric Materials)

  • 서강모;조중연;장호정
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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    • pp.180-180
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    • 2003
  • FRAM (Ferroelectric Random Access Memory)은 DRAM(Dynamic Random Access Memory)in 커패시터 재료을 상유전체 물질에서 강유전체 물질로 대체하여 전원 공급이 차단되어도 정보를 기억할 수 있고, 데이터의 고속처리가 가능하고 저소비전력과 집적화가 뛰어난 차세대 메모리 소자이다. 본 연구에서는 n-Well/P-Si(100) 기판위에 $Y_2$O$_3$ 박막을 중간층 (buffer layer)으로 사용하여 (Bi,La) Ti$_3$O$_{12}$ (BLT) 강유전체 박막을 졸-겔 방법으로 형성하여 MFM(I)S(Metal Ferroelectric Metal (Insulation) Silicon) 구조의 커패시터 및 전계효과형 트랜지스터(Field Effect Transistor) 소자를 제작하였다. 제작된 소자에 대해 형상학적, 전기적 특성을 조사, 분석하였다.

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