• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.68-69
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• 2005

BTO ($BaTiO_3$) thin film is one of the high dielectric materials for high-density dynamic random access memories (DRAMs) due to its relatively high dielectric constant. It is generally known that BTO film is difficult to be etched by plasma etching, but high etch rate with good selectivity to pattern mask was required. The problem of sidewall angle also still remained to be solved in plasma etching of BTO thin film. In this study, we first examined the patterning possibility of BTO film by chemical mechanical polishing (CMP) process instead of plasma etching. The sputtered BTO film on TEOS film as a stopper layer was polished by CMP process with the self-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS), respectively. The removal rate of BTO thin film using the$ BaTiO_3$-mixed abrasive slurry ($BaTiO_3$-MAS) was higher than that using the $TiO_2$-mixed abrasive slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%. The sufficient within-wafer non-uniformity (WIWNU%)below 5% was obtained in each abrasive at all concentrations. The surface morphology of polished BTO thin film was investigated by atomic force microscopy (AFM).

• Journal of the Korean institute of surface engineering
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• v.42 no.1
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• pp.21-25
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• 2009

Using an evaporation system, $SiO_2$ was deposited as a buffer layer between a PET substrate and a ITO layer and then ITO/$SiO_2$/PET layers were annealed for 1.5 hours at the temperature of $180^{\circ}C$. Adhesion and electro-optical properties of ITO films were studied with thickness variance of a $SiO_2$ buffer layer. As a result of introduction of the $SiO_2$ buffer layer, sheet resistance and resistivity increased and a ITO film with optimum sheet resistance ($529.3{\Omega}/square$) for an upper ITO film of resistive type touch panel could be obtained when $SiO_2$ of $50{\AA}$ was deposited. And it was found that ITO films with $SiO_2$ buffer layer have higher transmittance of $88{\sim}90%$ at 550 nm wavelength than ITO films with no buffer layers and the transmittance was enhanced as $SiO_2$ thickness increased from $50{\AA}$ to $100{\AA}$. Adhesion property of ITO films with $SiO_2$ buffer layers became better than ITO films with no buffer layers and this property was independent of $SiO_2$ thickness variance ($50{\sim}100{\AA}$). By depositing a $SiO_2$ buffer layer of $50{\AA}$ on the PET substrate and sputtering a ITO thin film on the layer, a ITO film with enhanced adhesion, electro-optical properties could be obtained.

• Applied Chemistry for Engineering
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• v.3 no.2
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• pp.305-311
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• 1992

The experimental study on the reduction of $In_2O_3$ was performed by using thermogravimetric analyzer. The reduction of $In_2O_3$ was occurred at above $300^{\circ}C$. The reduction rates were rapidly increased with the reaction temperature, whilehardly affectedby the flow rate of hydrogen gas. It was found that the unreacted core model could be applied for the analysis of the reduction data and the rate control step was the chemical reaction of $In_2O_3$ with hydrogen on the surface of unreacted $In_2O_3$. The apparent activation energy for this reaction was 20kcal/g-mol $H_2$ and the rate equation of $In_2O_3$ reduction with hydrogen could be expressed in the following equation. ${\frac{dX}{dt}}=1.6{\times}10^5e^{-20000/RT}(1-X)^{2/3}$

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.99-106
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• 1993

A relationship $(T_c = -17.869C^2+1840.2C-46623)$ between Curie Temperature$(T_c)$ and (C), $Li_2O$ mole percent(%) was established from the measurement results of Curie temperature $(T_c)$) analysed by DTA(Differential Thermal Analysis) in the range from 48.50 to 49.00 $Li_2O$ mole %. Congruent melt composition of $LiTaO_3$ single crystal was to be 48.65 $Li_2O$ mole % and its Curie temperature was also determined to be $610{\pm}1^{\circ}C$ from the results of Curie temperature difference, ${\Delta}T (T_{c(Top)}-T{_c(Tail)})$ of Czochralski grown $LiTaO_3$ crystals and the distribution coefficient(k). The k was calculated from $LiO_2$ mole ratio of initial melt to final melt and initial crystal to final crystal in the range from 48.60 to 48.70 $Li_2O$ mole %.

• Journal of the Korean Chemical Society
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• v.33 no.1
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• pp.11-17
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• 1989

Pyrazinium chlorochromate and dipyrazinium trichromate which are pyrazinium salts were prepared by the each reaction of pyrazine with chromium trioxide under the presence of HCl and $CH_2Cl_2$. These compounds wese nonhygroscopic and were solved in water very well. Physical properties such as solubility, pH, electrical conductivity, and melting point were measured. These compounds were considered to be ionic ; $C_4H_4N_2H^+$, $CrO_3Cl^-$, $Cr_3O^{2-}_{10}$ by the measurement of electrical conductivity. It was found that CrO$_3$ was formed in the first decomposition process of salts and it was changed into $Cr_2O_3$ in the second process as its weight is decreased. It was also found that especially under the same condition dipyrazinium salt was in the form of isopoly ($Cr_2O^{2-}_{10}$)anion which has been thought to be in the form of $Cr_2O^{2-}_{7}$ obtained from pyridine.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.77.2-77.2
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• 2013

In this talk, I will briefly review recent results of my group related to application of atomic layer deposition (ALD) for fabricating environmental catalysts and organic solar cells. ALD was used for preparing thin films of TiO2 and NiO on mesporous silica with a mean pore size of 15 nm. Upon depositing TiO2 thin films of TiO2 using ALD, the mesoporous structure of the silica substrate was preserved to some extent. We show that efficiency for removing toluene by adsorption and catalytic oxidation is dependent of mean thickness of TiO2 deposited on silica, i.e., fine tuning of the thickness of thin film using ALD can be beneficial for preparing high-performing adsorbents and oxidation catalysts of volatile organic compound. NiO/silica system prepared by ALD was used for catalysts of chemical conversion of CO2. Here, NiO nanoparticles are well dispersed on silica and confiend in the pore, showing high catalytic activity and stability at 800oC for CO2 reforming of methane reaction. We also used ALD for surface modulation of buffer layers of organic solar cell. TiO2 and ZnO thin films were deposited on wet-chemically prepared ZnO ripple structures, and thin films with mean thickness of ~2 nm showed highest power conversion efficiency of organic solar cell. Moreover, performance of ALD-prepared organic solar cells were shown to be more stable than those without ALD. Thin films of oxides deposited on ZnO ripple buffer layer could heal defect sites of ZnO, which can act as recombination center of electrons and holes.

• Journal of Microbiology and Biotechnology
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• v.31 no.9
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• pp.1191-1199
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• 2021

Enteropathogenic Escherichia coli (EPEC), which belongs to the attaching and effacing diarrheagenic E. coli strains, is a major causative agent of life-threatening diarrhea in infants in developing countries. Most EPEC isolates correspond to certain O serotypes; however, many strains are non-typeable. Two EPEC strains, EPEC001 and EPEC080, which could not be serotyped during routine detection, were isolated. In this study, we conducted an in-depth characterization of their putative O-antigen gene clusters (O-AGCs) and also performed constructed mutagenesis of the O-AGCs for functional analysis of O-antigen (OAg) synthesis. Sequence analysis revealed that the occurrence of O-AGCs in EPEC001 and E. coli O132 may be mediated by recombination between them, and EPEC080 and E. coli O2/O50 might acquire each O-AGC from uncommon ancestors. We also indicated that OAg-knockout bacteria were highly adhesive in vitro, except for the EPEC001 wzy derivative, whose adherent capability was less than that of its wild-type strain, providing direct evidence that OAg plays a key role in EPEC pathogenesis. Together, we identified two EPEC O serotypes in silico and experimentally, and we also studied the adherent capabilities of their OAgs, which highlighted the fundamental and pathogenic role of OAg in EPEC.

• The Plant Pathology Journal
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• v.35 no.1
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• pp.77-83
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• 2019

Chlorine dioxide ($ClO_2$) can be used as an alternative disinfectant for controlling fungal contamination during postharvest storage. In this study, we tested the in vitro and in vivo inhibitory effects of gaseous $ClO_2$ against Diaporthe batatas SP-d1, the causal agent of sweetpotato dry rot. In in vitro tests, spore suspensions of SP-d1 spread on acidified potato dextrose agar were treated with various $ClO_2$ concentrations (1-20 ppm) for 0-60 min. Fungal growth was significantly inhibited at 1 ppm of $ClO_2$ treatment for 30 min, and completely inhibited at 20 ppm. In in vivo tests, spore suspensions were drop-inoculated onto sweetpotato slices, followed by $ClO_2$ treatment with different concentrations and durations. Lesion diameters were not significantly different between the tested $ClO_2$ concentrations; however, lesion diameters significantly decreased upon increasing the exposure time. Similarly, fungal populations decreased at the tested $ClO_2$ concentrations over time. However, the sliced tissue itself hardened after 60-min $ClO_2$ treatments, especially at 20 ppm of $ClO_2$. When sweetpotato roots were dip-inoculated in spore suspensions for 10 min prior to treatment with 20 and 40 ppm of $ClO_2$ for 0-60 min, fungal populations decreased with increasing $ClO_2$ concentrations. Taken together, these results showed that gaseous $ClO_2$ could significantly inhibit D. batatas growth and dry rot development in sweetpotato. Overall, gaseous $ClO_2$ could be used to control this fungal disease during the postharvest storage of sweetpotato.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.4
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• pp.276-280
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• 2019

In this study, we investigated the crystal defects and grain boundary properties in a ZZCCC ($ZnO-Zn_2BiVO_6-Co_3O_4-Cr_2O_3-CaCO_3$) varistor, with the liquid-phase sintering aid $Zn_2BiVO_6$ developed by our laboratory. The ZZCCC varistor sintered at $1,200^{\circ}C$ exhibited excellent nonlinear current-voltage characteristics (${\alpha}=63$), with oxygen vacancy ($V_o^*$ ; 0.35 eV) as a main defect, and an apparent activation energy of 1.1 eV with an electrically single grain boundary. Therefore, among the various additives to improve the electrical properties of ZnO varistors, if $Zn_2BiVO_6$ is used as a liquid phase sintering aid, it will be ideal to use Co for the oxygen vacancy and Ca for the electrically single grain boundary. This will allow the good properties of ZnO varistors to be maintained up to high sintering temperatures.

• Journal of the Korean institute of surface engineering
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• v.56 no.6
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• pp.380-385
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• 2023

In this study, an MPB PMNT system containing 0.05 to 0.10 wt.% BaTiO₃ was synthesized using a traditional chemical method and its pyroelectricity was investigated. Pyroelectricity, dielectricity, and ferroelectricity of the synthesized BaTiO₃-PMNT system were analyzed by heat treatment at 1240~1280 ℃ for 4 hours to evaluate its applicability as a pyroelectric sensor. Unlike the simple ABO₃ ferroelectric, the BaTiO₃-doped PMNT system exhibited phase transition characteristics over a wide temperature range typical of complex perovskite structures. Although no dramatic change could be confirmed depending on the amount of BaTiO₃ added, stable pyroelectricity was maintained near room temperature and over a wide temperature range. When the amount of BaTiO₃ added increased from 0.05BaTiO₃-PMNT to 0.10BaTiO₃-PMNT, the electric field slightly increased from 5.00×10³ kV/m to 6.75×10³ kV/m, and the maximum value of remanent polarization slightly increased from 0.223 C/m² to 0.234 C/m². The pyroelectric coefficients of 0.05BaTiO₃-PMNT and 0.10BaTiO₃- PMNT at room temperature were measured to be ~0.0084 C/m²K and ~0.0043 C/m²K, respectively. The relaxor ferroelectric properties of the BaTiO₃-PMNT system were confirmed by analyzing the plot of K_max/K versus (T-T_max)^γ. The BaTiO₃-doped MPB PMNT system showed a distinct pyroelectric performance index at room temperature, and the values were F_v ~ 0.0362 m²/C, F_d ~ 0.575×10^-4 Pa^-1/2.