• Journal of the Korean institute of surface engineering
• /
• v.37 no.6
• /
• pp.307-312
• /
• 2004

Extensive efforts have been made in an attempt to utilize photocatalytic properties of $TiO_2$ in visible range. $TiO_2$ and TiO-N thin films were made by the DC reactive magnetron sputtering method at $300^{\circ}C$. Various gases (Ar, $O_2$ and $N_2$) were used and Ti target was impressed by 0.6 kW-5.8 kW power range. The hysteresis phenomenon of the $TiO_2$ thin film as a function of the discharge voltage characteristic was observed to be higher as applied power increases. That of TiO-N thin film was occurred at the 5.8 kW power. The cross section and surface roughness of thin films were observed by FE-SEM and AFM. Average surface roughness of TiO-N thin film was observed as $15.9\AA$ and that of $TiO_2$ as $13.2\AA$. The crystal phases of both $TiO_2$ and TiO-N thin films were found to be anatase structure. The atomic $\beta$-N (396 eV peak in N 1s XPS) was shown in the rutile crystal of TiO-N and was considered acting as the origin of wavelength shift to the visible light.

• Proceedings of the KIEE Conference
• /
• 2001.11a
• /
• pp.161-164
• /
• 2001

Transmuted impurity atoms formed in neutron-irradiated ZnO thin films were theoretically identified first and then experimentally confirmed by Photoluminescence (PL). ZnO thin films grown by plasma-assisted molecular beam epitaxy were irradiated by neutron beam at room temperature. Among eight isotropes naturely exiting in ZnO films, only $^{64}Zn$, $^{68}Zn$, $^{70}Zn$ and $^{18}O$ were expected to transmute into $^{65}Cu$, $^{69}Ga$, $^{71}Ga$ and $^{19}F$, respectively. The concentrations of these transmuted atoms were estimated by considering natural abundance, neutron fluence, and neutron cross section. The neutron-irradiated ZnO thin films were characterized by PL. In the PL spectra of these ZnO thin film, the Cu-related PL peaks were seen, but the Ga- or F-associated PL peaks were absent. This observation demonstrates the existence of $^{65}Cu$ in the ZnO. In this paper, emission mechanism of Cu impurities wil1 be described and the reason for the absence of the Ga- or F-associated PL peaks will be discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.1
• /
• pp.39-45
• /
• 2004

Fine LaAlO$_3$ powders wore successfully synthesized from La$_2$O$_3$ and ${\gamma}$ $Al_2$O$_3$ powders milling for 10∼50 hours via the high energy milling technique (mechanochemical method) in room temperature and air. The particle size of LaAlO$_3$ powder were estimated from XRD patterns and SEM images to be 160∼180 nm. The LaAlO$_3$ ceramics arc derived for the synthesized powders (milling for 10, 30 and 50 hours) by sintering at 140$0^{\circ}C$ and 150$0^{\circ}C$. The micrographs of grains showed an agglomeration and the degree of agglomeration increased with the milling time. The LaAlO$_3$ made from synthesized powders milling for 50 hours can be sintered to 99.5％ of theoretical density at 150$0^{\circ}C$ for 1 hour. These ceramics exhibits a dielectric constant of 20, a dielectric loss of 0.0003 and a temperature coefficient of capacitance of 15 ppm/$^{\circ}C$ at 1 MHz.

• Journal of Magnetics
• /
• v.17 no.2
• /
• pp.83-85
• /
• 2012

Magnetic particles in a novel, wound-healing ointment were studied using M$\ddot{o}$ssbauer spectroscopy and VSM to estimate the stability of the properties of the magnetic particles. The isomer shifts of $Fe_3O_4(A)$ were found to be 0.49-0.56 mm/s relative to iron metal, this indicates that the iron ions in $Fe_3O_4(A)$ are $Fe^{3+}$. On the other hand, the isomer shifts of $Fe_3O_4(B)$ were found to be 0.91-1.13 mm/s relative to iron metal, this shows that the ion state of $Fe_3O_4(B)$ is a mixed state of $Fe^{2+}$ and $Fe^{3+}$. It is noted that this composition, as well as that of the initial pure component in the form of a highly dispersed fraction (${\sim}10\;{\AA}$), differs from the stoichiometric one. It was found that the area ratio of the M$\ddot{o}$ssbauer subspectra of $Fe_3O_4(A)$ / $Fe_3O_4(B)$ taken at 87 and 181 K linearly increased in comparison to the initial pure magnetic particles, but the rate of increase of the area ratio at 181 K was about two times that at 87 K. From the magnetic hyperfine field, despite their small size, the particles exhibit no superparamagnetism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.648-651
• /
• 2003

Fine $LaAlO_3$ powders were successfully synthesized from $La_2O_3$ and ${\gamma}-Al_2O_3$ powders milling for $10{\sim}50hrs$ via the high energy milling technique (mechanochemical methode) in room temperature and air. The particle size of $LaAlO_3$ powder were estimated from XRD patterns and SEM images to be $160{\sim}180nm$. The $LaAlO_3$ ceramics are derived for the synthesized powders (milling for 10, 30 and 50hrs) by sintering at $1400^{\circ}C$. The micrographs of grains showed a agglomeration and the degree of agglomeration increased with the milling time. The $LaAlO_3$ made from synthesized powders milling for 30hrs can be sintered to 98% of theoretical density at $1,400^{\circ}C$ for 4hrs.

• Journal of the Korean Ceramic Society
• /
• v.53 no.2
• /
• pp.134-138
• /
• 2016

Porous $Co_3O_4$ spheres with bimodal pore distribution (size: 2-3 nm and ~ 30 nm) were prepared by ultrasonic spray pyrolysis of aqueous droplets containing Co-acetate and polyethylene glycol (PEG), while dense $Co_3O_4$ secondary particles with monomodal pore distribution (size: 2-3 nm) were prepared from the spray solution without PEG. The formation of mesopores (~ 30 nm) was attributed to the decomposition of PEG. The responses of a porous $Co_3O_4$ sensor to various indoor air pollutants such as 5 ppm $C_2H_5OH$, xylene, toluene, benzene, and HCHO at $200^{\circ}C$ were found to be significantly higher than those of a commercial sensor using $Co_3O_4$ and dense $Co_3O_4$ secondary particles. Enhanced gas response of porous $Co_3O_4$ sensor was attributed to high surface area and the effective diffusion of analyte gas through mesopores (~ 30 nm). Highly sensitive porous $Co_3O_4$ sensor can be used to monitor various indoor air pollutants.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.248-249
• /
• 2008

ZnO (Zinc Oxide) thin film can be applied to various devices. Recently, ZnO film has been promoted in transparent TFTs (thin film transistors) because of high transparency and low temperature process. In this paper, ZnO thin films were grown on glass with the three conditions of RF sputtering power, which are 50W, 75W, 100W. Their structural, electrical and optical properties were investigated by using XRD, UV-Visible spectrometer and 4-point probes. In the ZnO film with 50W process, good crystallinity, high transmittance, and high sheet resistance were shown. In conclusion, the ZnO film with 50W can be an optimal channel layer of TFTs.

• Fashion & Textile Research Journal
• /
• v.5 no.5
• /
• pp.529-538
• /
• 2003

Chitosan should be satisfied a certain Mw range for the final application, Low molecular weight chitosan(LMWC) can be acquired by depolymerizing high molecular weight starting chitosan. Using $H_2O_2$ in depolymerizing chitosan is very effective and reproducible in controlling Mw of resulting LMWC. However, $H_2O_2$ can break glycoside linkage of chitosan and oxidize some $-NH_2$ groups in chitosan. It has been reported that decrease in DA(degree of deacetylation) of LMWC prepared by $H_2O_2$. However, any quantitative data of decrease in DA has not been reported yet. In this study, DA of initial chitosan and DA of $H_2O_2$ treated chitosan were measured and the change in DA of chitosan upon $H_2O_2$ treatment were investigated. Change in DA was very different upon $H_2O_2$ treatment condition. LMWC also showed DA change upon time passage. Pre-swelling treatment of initial chitosan and low ratio of $H_2O_2$/chitosan prevented a decrease in DA significantly. Yellowing of LMWC was detected upon time passage, however, decrease in DA was minimal (around 1%).

• 전기의세계
• /
• v.21 no.6
• /
• pp.17-20
• /
• 1972

The magnetic properties of Ba-Ferrite ( $M^{+2}$O.nF $e_{2}$ $O_{3}$ is highly improved under the condition of composition ratio n=4.4 when B $i_{2}$ $O_{3}$ is added to Ferrite, the adding amount and sintering temperature which affect the magnetic properties were investigated and the following results; were obtained; 1. Magnetic properties are varied with B $i_{2}$ $O_{3}$ content and singering temperature, and coercive force and residual induction can be improved with B $i_{2}$ $O_{3}$. 2. The optimal content of B $i_{2}$ $O_{3}$ amount is about 4 mol %, 3. Without the addition of B $i_{2}$ $O_{3}$, the optimal sintering temperature is about 1300.deg. C, but when 4 mol % of B $i_{2}$ $O_{3}$ is added, the optimal sintering temperature falls to the range of 900.deg. C to 1100.deg. C and it also improves magnetic properties. 4. Residual induction increases as the singering temperature is raised to 1100.deg. C. Coercive force also increased as the sintering temperature is raised to 1000.deg. C, but it rapidly decreases when sintering temperature goes beyond 1000.deg. C. 5. Only a negligible change may be noticed in the decrease of Curie temperature by the addition of about 4 mol % of B $i_{2}$ $O_{3}$.

• Applied Microscopy
• /
• v.42 no.4
• /
• pp.207-211
• /
• 2012

We examined the electrical properties and microstructure of NiO produced using a sol-gel method and Ni nitrate hexahydrate ($Ni[NO_3]_2{\cdot}6H_2O$) to investigate if this NiO thin film can be used as an insulator layer for resistance random access memory (ReRAM) devices. It was found that as-prepared NiO film was polycrystalline and presented as the nonstoichiometric compound $Ni_{1+x}O$ with Ni interstitials (oxygen vacancies). Resistances-witching behavior was observed in the range of 0~2 V, and the low-resistance state and high-resistance state were clearly distinguishable (${\sim}10^3$ orders). It was also demonstrated that NiO could be patterned directly by KrF eximer laser irradiation using a shadow mask. NiO thin film fabricated by the sol-gel method does not require any photoresist or vacuum processes, and therefore has potential for application as an insulating layer in low-cost ReRAM devices.