• Journal of the Korean Magnetics Society
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• v.19 no.4
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• pp.142-146
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• 2009

The soft magnetic property for the Corning glass/Ta(5 nm)/[Conetic, Permalloy)/Ta(3 nm) prepared by the ion beam deposition sputtering was investigated. The coercivity and saturation magnetic field of conetic (NiFeCuMo) and permalloy (NiFe) layer with easy and hard direction along to the applying magnetic field during deposition was compared with each other. The surface resistance of conetic film with a thickness of 10 nm was 2 times lower than one of permalloy film. The coercivity and the magnetic susceptibility of conetic film decreased and increased 3 times to one of permalloy film, respectively. These results suggest that a highly sensitive GMR-SV or MTJ using conetic film can be possible to develop the bio-device.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.74-78
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• 1999

For a high efficient field emission display (FED), the specific vacuum conditions below 10-7 Torr should be required. However, because the FED has the geometrical restriction due to its micro size, the thin film getters can be proposed for chemical pumping as a way to reduce impurity gases in the panel. The thin film getters, developed by employing the coating of new materials such as NI or Pt on getter surface, can be used without any activation process and show the enhanced sorption characteristics. Especially, using the Zr (1${\mu}{\textrm}{m}$) thin film getters with the Pt surface layer, the significant gettering for various active gases could be achieved from 9$\times$10-5 Torr to 1$\times$10-6 Torr or below. this good sorption properties is mainly contributed to the surface coating layer which shows the catalytic effect for gas dissociation and protects the getter materials against oxidation.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.424-429
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• 1996

Thin films of Ti-Ni alloy were formed by sputtering under various Ar gas pressures and r. f. powers to investigate the optimum sputtering conditions and to demonstrate their shape memory effect. The composition and structure of the films were examined by electron micro-probe analysis and scanning electron microscope. These films were annealed in order to crystallize them. The mechanical property of the annealed films was evaluated by a conventional bending test. The transformation tmeperatures were determined by differential scanning calorimetry. The shape memory behaviour was examined quantiatatively by changing in sample temperature under various constant loads. It was found that the Ar gas pressure had a critical effect on the mechanical property of the thin film,s although the r.f. power also affected it. The films formed at a high Ar gas pressure were too brittle to be bent successfully. However, the films formed at a low Ar gas pressur could be bent and their shape memory behavior was found to be comparable with that of bulk Ti-Ni alloys.

• Journal of the Korean Society for Nondestructive Testing
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• v.34 no.2
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• pp.171-175
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• 2014

In this study, we suggest a method to measure the thickness of thin films nondestructively using the dispersion characteristics of a surface acoustic wave propagating along the thin film surface. To measure the thickness of thin films, we deposited thin films with different thicknesses on a Si (100) wafer substrate by controlling the deposit time using the E-beam evaporation method. The thickness of the thin films was measured using a scanning electron microscope. Subsequently, the surface wave velocity of the thin films with different thicknesses was measured using the V(z) curve method of scanning acoustic microscopy. The correlation between the measured thickness and surface acoustic wave velocity was verified. The wave velocity of the film decreased as the film thickness increased. Therefore, thin film thickness can be determined by measuring the dispersion characteristics of the surface acoustic wave velocity.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.91-91
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• 2012

We aim in synthesizing various functional thin films thinner than ~ 10 nm for environmental applications and photovoltaic devices. Atomic layer deposition is used for synthesizing inorganic thin films with a precise control of the film thickness. Several examples about application of our thin films for removing volatile organic compounds (VOC) will be highlighted, which are summarized in the below. 1) $TiO_2$ thin films prepared by ALD at low temperature ($<100^{\circ}C$) show high adsorption capacity for toluene. In combination with nanostructured templates, $TiO_2$ thin films can be used as building-block of high-performing VOC filter. 2) $TiO_2$ thin films on carbon fibers and nanodiamonds annealed at high temperatures are active for photocatalytic oxidation of VOCs, i.e. photocatalytic filter can be created by atomic layer deposition. 3) NiO can catalyze oxidation of toluene to $CO_2$ and $H_2O$ at $<300^{\circ}C$. $TiO_2$ thin films on NiO can reduce poisoning of NiO surfaces by reaction intermediates below $200^{\circ}C$. We also fabricated inverted organic solar cell based on ZnO electron collecting layers on ITO. $TiO_2$ thin films with a mean diameter less than 3 nm on ZnO can enhance photovoltaic performance by reducing electron-hole recombination on ZnO surfaces.

• Journal of Sensor Science and Technology
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• v.30 no.5
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• pp.309-313
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• 2021

Organic semiconductors have received tremendous attention for their research because of their tunable electrical and optical properties that can be achieved by changing their molecular structure. However, organic materials are inherently unstable in the presence of oxygen and moisture. Therefore, it is necessary to develop moisture and air stable semiconducting materials that can replace conventional organic semiconductors. In this study, we developed a NiO_x thin film through a solution process. The electrical characteristics of the NiO_x thin film, depending on the thermal annealing temperature and UV-ozone treatment, were determined by applying them to the hole injection layer of an organic light-emitting diode. A high annealing temperature of 500 ℃ and UV-ozone treatment enhanced the conductivity of the NiO_x thin films. The optimized NiO_x exhibited beneficial hole injection properties comparable those of 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN), a conventional organic hole injection layer. As a result, both devices exhibited similar power efficiencies and the comparable electroluminescent spectra. We believe that NiO_x could be a potential solution which can provide robustness to conventional organic semiconductors.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.1
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• pp.11-16
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• 2001

CuNi alloy films are deposited by co-sputtering of dual targets (Cu and Ni, respectively). Effects of the co-sputtering conditions, such as powers applied to the targets, deposition pressures, and substrate temperatures, on the structural and electrical properties of deposited films are systematically investigated. The composition ratio of Ni/Cu is almost linearly decreased by increasing the DC power applied to the Cu target from 25.6 W to 69.7 W with the RF power applied to the Ni target unchanged(140 W). it is noted that the chamber pressure during deposition and the film thickness give rise to a change of the Ni/Cu ratio within the films deposited. The former may be due to a higher sputtering yield of Cu atom and the latter due to the re-sputtering phenomenon of Cu atoms on the surface of deposited film. The film deposited at higher pressures or at lower substrate temperatures have a smaller crystallite size, a higher electrical resistivity, and much more voids. This may be attributed to a lower surface mobility of sputtered atoms over the substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.157-158
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• 2013

Organic solar cell was fabricated using one-pot deposition of a mixture of NiO nanoparticles, P3HT and PCBM. In the presence of NiO, the photovoltaic performance was slightly increased comparing to that of the device without NiO. When $TiO_2$ thin films with a thickness of 2~3 nm was prepared on NiO nanoparticles using atomic layer deposition, the power conversion efficiency was increased by a factor 2.5 with respect to that with bare NiO. Moreover, breakdown voltage of the film consisting of NiO, P3HT, and PCBM on indium tin oxide was increased by more than 1 V in the presence of $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidized on NiO surfaces, and $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidzed on NiO surfaces, and $TiO_2$ shell heavily reduced oxidation of S at oxide/P3HT interfaces. Oxidized S atoms can most likely act as carrier generation sites and recombination centers within the depletion region, decreasing breakdown voltage and performance of organic solar cells. Our result shows that fabrication of various core-shell nanostruecutres of oxides by atomic layer deposition with controlled film thickness can be of potential importance for fabricating highly efficient organic solar cells.

• Applied Science and Convergence Technology
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• v.24 no.3
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• pp.72-76
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• 2015

Nickel oxide (NiO) thin films were grown on soda-lime glass substrates by RF magnetron sputtering method at room temperature (RT), and they were post-annealed at the temperatures of $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$ and $400^{\circ}C$ for 30 minutes in vacuum. The electronic structure, optical and electrical properties of NiO thin films were investigated using X-ray photoelectron spectroscopy (XPS), reflection electron energy spectroscopy (REELS), UV-spectrometer and Hall Effect measurements, respectively. XPS results showed that the NiO thin films grown at RT and post annealed at temperatures below $300^{\circ}C$ had the NiO phase, but, at $400^{\circ}C$, the nickel metal phase became dominant. The band gaps of NiO thin films post annealed at temperatures below $300^{\circ}C$ were about 3.7 eV, but that at $400^{\circ}C$ should not be measured clearly because of the dominance of Ni metal phase. The NiO thin films post-annealed at temperatures below $300^{\circ}C$ showed p-type conductivity with low electrical resistivity and high optical transmittance of 80% in the visible light region, but that post-annealed at $400^{\circ}C$ showed n-type semiconductor properties, and the average transmittance in the visible light region was less than 42%. Our results demonstrate that the post-annealing plays a crucial role in enhancing the electrical and optical properties of NiO thin films.

• Journal of the Korean Magnetics Society
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• v.5 no.2
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• pp.134-139
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• 1995

We produced $(Co_{93}Cr_{7})-P-Ni$ thin films for longitudinal magnetic recording media using OC magnetron sputtering system The variation of magnetic properties of $(Co_{93}Cr_{7})-P-Ni$ pseudo-ternary system with the composition was examined. We obtained the coercivity up to 1500 Oe. The coercivity iocrease could be ascribed to in-plane anisotropy enhaocement, grain size decrease, magnetic decoupling between particles. TEM micrographs showed that the grains were well-decoupled by the addition of phosphorous.