• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.442-443
• /
• 2007

Al-N co-doped ZnO films were fabricated on n-Si (100) and homo-buffer layers in the mixture of oxygen and nitrogen at $450^{\circ}C$ by magnetron sputtering. Target was ZnO ceramic mixed with $2wt%Al_2O_3$. XRD spectra show that as-grown and $600^{\circ}C$ annealed films are prolonged along crystal c-axis. However they are not prolonged in (001) plane vertical to c-axix. The films annealed at $800^{\circ}C$ are not prolonged in any directions. Codoping makes ZnO films unidirectional variation. XPS show that Al content hardly varies and N escapes with increasing annealing temperature from $600^{\circ}C\;to\;800^{\circ}C$. The electric properties of as-grown films were tested by Hall Effect with Van der Pauw configuration show some of them to be p-type conduction.

• Korean Journal of Materials Research
• /
• v.15 no.1
• /
• pp.73-77
• /
• 2005

Motivated by the enhanced magnetic properties of Mg-codoped GaMnN ferromagnetic semiconductors, Be-codoped GaMnAs films were grown via molecular beam epitaxy with varying Mn flux at a fixed Be flux. The structural, electrical, and magnetic properties were investigated. GaAs:(Mn,Be) films showed metallic behavior while GaAs:Mn films showed semiconducting behavior as determined by the temperature dependent resistivity measurements. The Hall-effect measurements with varying magnetic field showed clear anomalous Hall effect up to room temperature proving ferromagnetism and magnetotransport in the GaAs:(Mn,Be) films. Planar Hall resistance measurement also confirmed the properties. The dramatic enhancement of the Curie temperature in GaMnAs system was attributed to Be codoping in the GaMnAs films as well as MnAs precipitation.

• Bulletin of the Korean Chemical Society
• /
• v.29 no.6
• /
• pp.1217-1223
• /
• 2008

A series of Zr,S co-doped $TiO_2$ were synthesized by a modified sol-gel method and characterized by various spectroscopic and analytical techniques. The presence of sulfur caused a red-shift in the absorption band of $TiO_2$. Co-doping of sulfur and zirconium (Zr-$TiO_2$-S) improves the surface properties such as surface area, pore volume, and pore diameter and also enhances the thermal stability of the anatase phase. The Zr-$TiO_2$-S systems are very effective visible-light active catalysts for the degradation of toluene. All reactions follow pseudo firstorder kinetics with the decomposition rate reaching as high as 77% within 4 h. The catalytic activity decreases in the following order: Zr-$TiO_2$-S >$TiO_2$-S >Zr-$TiO_2$>$TiO_2$$\approx$ P-25, demonstrating the synergic effect of codoping with zirconium and sulfur. When the comparison is made within the series of Zr-$TiO_2$-S, the catalytic performance is found to be a function of Zr-contents as follows: 3 wt % Zr-TiO2-S >0.5 wt % Zr-$TiO_2$-S> 5 wt % Zr-$TiO_2$-S >1 wt % Zr-$TiO_2$-S. Higher calcination temperature decreases the reactivity of Zr-$TiO_2$-S.

• Journal of Sensor Science and Technology
• /
• v.18 no.1
• /
• pp.48-53
• /
• 2009

$Eu^{2+}$-doped ${SrAl_2}{O_4}$ and $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors have been synthesized by conventional solid state method. Photocurrent properties of $Eu^{2+}$ doped ${SrAl_2}{O_4}$ and $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors, in order to elucidate $Dy^{3+}$ co-doping effect, during and after ceasing ultraviolet-ray (UV) irradiation have been investigated. The photocurrent of $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors during UV irradiation was 4-times lower than that of $Eu^{2+}$-doped ${SrAl_2}{O_4}$ during UV irradiation, and 7-times higher than that of $Eu^{2+}$-doped ${SrAl_2}{O_4}$ after ceasing UV irradiation. The photocurrent results indicated that holes of charge carriers captured in hole trapping center during the UV irradiation and liberated after-glow process, and made clear that $Dy^{3+}$ of co-dopant acted as a hole trap. The photocurrent of ${SrAl_2}{O_4}$ showed a good proportional relationship to UV intensity in the range of $1{\sim}5mW/cm^2$, and $Eu^{2+}$-doped ${SrAl_2}{O_4}$ was confirmed to be a possible UV sensor.

• Journal of the Korean Ceramic Society
• /
• v.44 no.12
• /
• pp.655-659
• /
• 2007

Zirconia polycrystals co-doped with x mol% CaO and (10-x) mol% $Y_2O_3$ were prepared by solid state reaction method. The compositions were chosen for nominally the same oxygen vacancy concentration of 5 mol%. X-ray diffraction patterns indicated the formation of cubic zirconia by heat treatment at $1600^{\circ}C$. Impedance spectroscopy was applied to deconvolute the bulk and grain boundary response. Electrical conductivity was measured using the complex impedance technique from 516 to 874 K in air. Maximum conductivity was exhibited by the composition with equal amounts of CaO and $Y_2O_3$, which may be ascribed to the smaller degree of defect-interactions in that composition due to the competition of different ordering schemes between the two systems. When compared to the composition containing $Y_2O_3$ only, co-doping of CaO increases the grain boundary resistance considerably. The activation energy of grain and grain boundary conductivity was 1.1 eV and 1.2 eV, respectively, with no appreciable dependence on dopant compositions.

• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.3
• /
• pp.94-101
• /
• 2023

Zinc oxide(ZnO) is a semiconductor material with a bandgap of 3.37 eV and an exciton binding energy of 60 meV for various applications. Recently ZnO has been proven to enhance its electrical properties for utilization as an alternative for transparent conducting oxide (TCO) materials. In this study, cation(Al, Ga)-anion(F) single and double doped ZnO thin films were grown by atomic layer deposition (ALD) to enhance the electrical properties. The structural and optical properties of doped ZnO thin films were analyzed, and doping effects were confirmed to electrical characteristics. In single doped ZnO, it was observed that the carrier concentration was increased after doping, acting as a donor to ZnO. Among the single doping elements, F doped ZnO(FZO) showed the highest mobility and conductivity due to the passivation effect of oxygen vacancies. In the case of double doping, higher electrical characteristics were observed compared to single doping. Among the samples, Al-F doped ZnO(AFZO) exhibited the lowest resistance value. This results can be attributed to an increase in delocalized electron states and a decrease in lattice distortion resulting from the differences in ionic radius. The partial density of states(PDOS) was also analyzed and observed to be consistent with the experimental results.