• Journal of the Korean Society of Safety
• /
• v.5 no.1
• /
• pp.19-29
• /
• 1990

The objective of this paper is to investigate the effect of residual stresses on the $\Delta$K$\sub$th/ and fatigue crack growth behavior of butt weldments. For this purpose, transverse butt sutmerged arc welding was performed on SM50A steel plate and CT(compact tension) specimens which loading direction is perpendicular to weld bead were selected. Welding residual stresses distribution on the specimen was determined by hole drilling method. The case of crack located parallel to weld bead, the states of as weld and PWHT, $\Delta$K$\sub$th/ of specimens(HAZ, weld zone) was higher than that of the base metal probably because of the compressive residual stresses of crack tip. In low $\Delta$K region, it is estimated that the effects of residual stresses for da/dN are great. In region II, the da/dN of weldments in as weld state was lower than that of the base metal. Though da/dN of Weldments in PWHT state was similar to that of the base metal. The constant of power law, m in two states consisted with the base metal. Therefore , it is estimated that the value of m is not affected by residual stresses. Fatigue crack growth behavior of weldments consisted with the base metal considering the effective stress intensity factor range($\Delta$K$\sub$eff/) included the effect of initial residual stress(Kres). Thus, we can predict the fatigue crack growth behavior of weldment by knowing the distribution of initial residual stress at the crack tip.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.3
• /
• pp.147-151
• /
• 2016

Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.63-63
• /
• 2009

In this work, we demonstrate 800V 4H-SiC power DMOSFETs with several structural alterations to observe static DC characteristics, such as a threshold voltage ($V_{TH}$) and a figure of merit ($V_B^2/R_{SP,ON}$). To optimize the static DC characteristics, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. Design parameters are optimized using 2D numerical simulations and the 4H-SiC DMOSFET structure results in high figure of merit ($V_B^2/R_{SP,ON}$>~$340MW/cm^2$) for a power MOSFET in $V_B{\sim}1200V$ range.

• Journal of Ecology and Environment
• /
• v.33 no.3
• /
• pp.187-193
• /
• 2010

Seed germination is a biological process that is affected by a variety of genetic and environmental factors. The cardinal temperature and thermal time are required for germination. The principal objective of this study was to identify and characterize variations in the base, optimum, and maximum germination temperatures of Haloxylon aphyllum L. from two seed sources, in order to establish models for use in predicting seeding dates. Mature H. aphyllum seeds were germinated at temperatures between 5 and $35^{\circ}C$. The germination behavior of H. aphyllum seeds to different temperature regimens in light was evaluated over a temperature range of $5-35^{\circ}C$ at intervals of $5^{\circ}C$. The rate of germination increased between base and optimum thermal conditions, and decreased between optimum and maximum thermal conditions; the germination rate varied in a linear fashion at both sub-optimal and supra-optimal temperatures. The linear regression fit the range of germination rates at $5^{\circ}C$ to $25^{\circ}C$ and $25^{\circ}C$ to $30^{\circ}C$, and thus the base temperature, optimum temperature, and maximum temperature for the germination of H. aphyllum were measured to be $0.6^{\circ}C$, $25.69^{\circ}C$, $37.90^{\circ}C$, and $1.76^{\circ}C$, $21.56^{\circ}C$, $37.90^{\circ}C$ for Qom and the Fars dune desert respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.8
• /
• pp.637-640
• /
• 2009

In this work, we demonstrate 800 V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B\;^2/R_{SP,ON}$), To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below $^{\sim}$3.8 V, and high figure of merit ($V_B\;^2/R_{SP,ON}$>$^{\sim}$200 $MW/cm^2$) for a power MOSFET in $V_B\;^{\sim}$800 V range.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.28A no.10
• /
• pp.821-829
• /
• 1991

In this paper, a BICMOS technology that has CMOS devices for digital application and bipolar devices for high voltage (80V) analog applications is presented. Basic concept to design BICMOS device is simple process technology without making too many performance trade-offs. The base line process is poly gate p-well CMOS process and three additional masking steps are added to improve bipolar characteristics. The key ingredients of bipolar integration are n+ buried layer process, up/down isolation process and p-well base process. The bipolar base region is formed simultaneously with the region of CMOS p-well area to reduce mask and heat cycle steps. As a result, hFE value of NPN bipolar transistor is 100-150(Ic=1mA). Collector resistance value is 138 ohm in case of bent type collector structure. Breakdown voltage of BVebo, BVcbo and BVceo are 21V, 115V and78V respectively. Threshold voltage is ${\pm}$1.0V for NMOS and PMOS transistor. Breakdown voltage of NMOS and PMOS transistor is obtained 22V and 19V respectively. 41 stage CMOS ring oscillator has 0.8ns delay time.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.27 no.9
• /
• pp.1444-1450
• /
• 2003

The fatigue life and tensile strength of JLF-1 steel (Fe-9Cr-2W-V-Ta) and its TIG weldment were investigated at the room temperature and $400^{\circ}C$. Four kinds of test specimens, which associated with the rolling direction and the TIG welding direction were machined. The base metal of JLF-1 steel represented almost anisotropy in the tensile properties for the rolling direction. And the base metal of JLF-1 steel showed lower strength than that of TIG weldment. Also, the strength of all materials entirely decreased in accordance with elevating test temperature. Moreover, the fatigue limit of weld metal was largely increase than that of base metal at both temperatures. The fatigue limit of JLF-1 steel decreased in accordance with elevating test temperature. The fatigue limit of JLF-1 steel decreased in accordance with elevating test temperature. The SEM fractography of tensile test specimen showed conspicuous cleavage fracture of a radial shape. In case of fatigue life test specimen, there were so many striations at crack initiation region, and dimple was observed at final fracture region as a ductile fracture mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.553-556
• /
• 1999

This paper presents a proper condition to achieve above 19 % conversion efficiency using PC1D simulator. Cast poly-Si wafers with resistivity of 1 $\Omega$-cm and thickness of 250 ${\mu}{\textrm}{m}$ were used as a starting material. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 cm/s, minority carrier diffusion length in the base region 200 ${\mu}{\textrm}{m}$, front surface recombination velocity 100 cnt/s, sheet resistivity of emitter layer 100 $\Omega$/$\square$, BSF thickness 5 ${\mu}{\textrm}{m}$, doping concentration 5$\times$10$^{19}$ cm$^3$ . Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19 %. Further details of simulation parameters and their effects to cell characteristics are discussed in this paper.

• Korean Journal of Microbiology
• /
• v.32 no.1
• /
• pp.20-27
• /
• 1994

An inducible ${\beta}$-lactamase gene (bla) was identified and isolated from the chromosomal DNA of multiple drug resistant strains of Staphylococcus aureus. Determined base sequence of bla and of its flanking region was compared with those of bla genes identified on the staphylococcal plasmids pPC1, pI258, pI1071, and pUB101. Base sequence of 843 base-long structural gene of our bla was same as that of pPCl-, pI258-, and pS1-bla. However, HindIII recognition site Which is found in most of the bla genes at 140 base upstream from the structural gene was moved to the site of 370 base upstream from the structural gene. And one of the two direct repeat sequence found in downstream flanking region of pI1071-bla was deleted in our bla. Amino acid sequence homology analysis of the ORF located around HindIII recognition site reveals that this 80 amino acids-long polypeptide is C-terminus of transposase of Tn4001.

• Smart Structures and Systems
• /
• v.22 no.4
• /
• pp.383-397
• /
• 2018

Traditional base isolation systems focus on isolating the seismic response of a structure in the horizontal direction. However, in regions where the vertical earthquake excitation is significant (such as near-fault region), a traditional base-isolated building exhibits a significant vertical vibration. To eliminate this shortcoming, a rocking-isolated system named Telescopic Column (TC) is proposed in this paper. Detailed rocking and isolation mechanism of the TC system is presented. The seismic performance of the TC is compared with the traditional elastomeric bearing (EB) and friction pendulum (FP) base-isolated systems. A 4-storey reinforced concrete moment-resisting frame (RC-MRF) is selected as the reference superstructure. The seismic response of the reference superstructure in terms of column axial forces, base shears, floor accelerations, inter-storey drift ratios (IDR) and collapse margin ratios (CMRs) are evaluated using OpenSees. The results of the nonlinear dynamic analysis subjected to multi-directional earthquake excitations show that the superstructure equipped with the newly proposed TC is more resilient and exhibits a superior response with higher margin of safety against collapse when compared with the same superstructure with the traditional base-isolation (BI) system.