• Korean Journal of Materials Research
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• v.10 no.11
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• pp.784-788
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• 2000

The Vickers microhardness was measured on the basal (0001) plane of sapphire single crystals in the temperature range from 25$^{\circ}C$to 1000$^{\circ}C$. The substructure surrounding the indents was investigated using selective chemical polishing and etching, optical microscopy, and trasmission electron microscopy (TEM). At room temperature, cracks were predominant, and at intermediate temperatures (400$^{\circ}C$and 600$^{\circ}C$), extensive rhombohedral twinning was observed. On the other hand, at higher temperatures, prism plane slip bands on prism plane {1120}(원문참조) were dominant in the microstructure. TEM observations revealed that the dislocation substructure at the vicinity of the indents consisted of fairly straight dislocations lying in basal and/or prism planes and aligned along the <1100> and <1120> directions. The details of the glide dissociation of perfect <110> screw dislocations into three collinear 1/3<1100> partials on the prism plane and the Peierls potential for sapphire single crystals were discussed.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.132-132
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• 2008

실험실적 도금 simulator 에서 도금실험을 행하여 전기아연도금재 표면품질이 염화암모늄 및 유기첨가제 농도와 상관성을 관찰하였다. 이들은 각각 도금층의 우선배향면인 basal plane 와 연관성이 있었으며 basal plane 이 적을수록 표면 백색 및 광택이 감소하였다.

• Journal of the Korean Society for Precision Engineering
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• v.33 no.3
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• pp.225-230
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• 2016

Since the development of anodic aluminum oxide (AAO), extensive studies have been conducted ranging from fundamental research to the applications of AAO. Most of the research on AAO structures have focused on well-aligned nanoporous structures fabricated under specific conditions. This study investigated fabricable AAO structures with anodization performed with various temperatures, electrical potentials, and basal plane surfaces. As a result, nanoporous and nanofibrous structures were fabricated. The nanopores were formed at a relatively lower temperature and potential, and the nanofibers were formed at a relatively higher temperature and potential regardless of the basal plane surface. The shape of the base surface was found to influence the structural arrangement in nanoporous morphologies. These interesting findings relating to new morphologies have the potential to broaden the possible applications of AAO materials.

• YAKHAK HOEJI
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• v.17 no.2
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• pp.111-114
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• 1973

Je-chun clay, Hwa-soon bentonite, and Hwa-soon montmorillonite were treated with treated with organic solvents, i.e., ethylene glycol, ethanol, n-hexane, dioxane, ethylene chlorohydrin and obtained X-ray diffractograms were compared with those of the original samples. Organic solvent was adsorbed on the basal plane surfaces of Je-chun clay, Hwa-soon bentonite, Hwa-soon montmorillonite and, as a result, the axis spacing ws increased, However, organic solvent did not affect the non-expanding lattice of Japanese acid clay and the basal plane remained unchanged.

• Journal of the Korean Ceramic Society
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• v.34 no.11
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• pp.1151-1158
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• 1997

Fracture of uni-directional carbon fiber reinforced carbon matrix composite is strongly dependent on the orientation of basal plane in graphite matrix when it is limited within matrix. The orientation of basal planes are vertically stacked to carbon fiber which results in the weakness for applied tensile or shear force in thermosetting resin derived-carbon matrix composite. Microtextural control of the matrix was tried through chemical interaction between metal carbides and furan resin derived-carbon matrix. SiC and TiO2 addition made the orientation disordered. However, porosity increased due to decomposition of SiC. Interfacial bonding could be controlled by TiO2 addition, but carbon fiber was considerably reacted with TiC during thermal treatment higher than 2$600^{\circ}C$. Therefore, it is desirable to control the thermal treatment temperature at which decomposition of SiC was not serious and TiC/C was not formed eutectoid.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.8
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• pp.1-6
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• 2010

We report on the electrical properties of Ti/Al/Ni/Au (20 nm/ 150 nm/ 30 nm/ 100 nm) Ohmic contacts and the anisotropic conductivity of n-type ${\alpha}$-plane ([11-20]) GaN grown on $\gamma$-plane ([1-102]) sapphire substrates. The Ti/Al/Ni/Au Ohmic contacts and their sheet resistances are characterized by using the transfer length method (TLM) as a function of azimuthal angles. It is found that the specific contact resistance does not depend on the axis orientation and there are significant electrical anisotropy in ${\alpha}$-plane GaN films on $\gamma$-plane sapphire substrates, and the sheet resistance varies with azimuthal angles. The sheet resistance values in the direction parallel to m-axis [1-100] are 25% ~ 75% lower than those parallel to c-axis [0001] directions. Thus, Basal stacking faults (BSFs) are offered as a feasible source of the anisotropic mobility in defected m-axis direction because the band-edge discontinuities owing to the differential band gap structure.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.278-282
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• 2001

The recombination motion of Partial dislocations on basal slip (0001) 1/3<1120> in sapphire ($\alpha$-Al$_2$$O_3$) single crystals was investigated using the four-point bending test with the prism plane (1120) samples. These bending experiments were carried but in the temperature range from $1200^{\circ}C$ to $1400^{\circ}C$ at various engineering stresses 90MPa, 120MPa, and 150MPa. During these tests it was shown that an incubation time was needed for basal slip to be activated. The activation energy for the incubation time was 5.6-6.0eV in the temperature range from $1200^{\circ}C$ to $1400^{\circ}C$. The incubation time is believed to be related to recombination of climb dissociated partial dislocations via self-climb. In addition, these activation energies are nearly same as those for oxygen self-diffusion in $Al_2$$O_3$ (approximately 6.3 eV). Thus, the recombination of the two partial dislocations would be possibly controlled by oxygen diffusion on the stacking fault between the partials.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.557-565
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• 2014

We report the effect of basal-plane stacking faults (BSFs) on X-ray diffraction (XRD) of non-polar (11$\underline{2}$0) a-plane GaN films with different $SiN_x$ interlayers. Complete $SiN_x$ coverage and increased three-dimensional (3D) to two-dimensional (2D) transition stages substantially reduce BSF density. It was revealed that the Si-doping profile in the Si-doped GaN layer was unaffected by the introduction of a $SiN_x$ interlayer. The smallest in-plane anisotropy of the (11$\underline{2}$0) XRD ${\omega}$-scan widths was found in the sample with multiple $SiN_x$ layers, and this finding can be attributed to the relatively isotropic GaN mosaic resulting from the increase in the 3D-2D growth step. Williamson-Hall (WH) analysis of the (h0$\underline{h}$0) series of diffractions was employed to determine the c-axis lateral coherence length (LCL) and to estimate the mosaic tilt. The c-axis LCLs obtained from WH analyses of the present study's representative a-plane GaN samples were well correlated with the BSF-related results from both the off-axis XRD ${\omega}$-scan and transmission electron microscopy (TEM). Based on WH and TEM analyses, the trends in BSF densities were very similar, even though the BSF densities extracted from LCLs indicated that the values were reduced by a factor of about twenty.

• The korean journal of orthodontics
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• v.32 no.2 s.91
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• pp.117-127
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• 2002

The purpose of this study was to compare the arch width of the hyperdivergent group with that of the neutral group in Class III malocclusion based on the vertical patterns and to compare the arch width of Class III neutral group With that of normal occlusion group based on sagittal patterns. The subjects consisted of 118 pairs of studty casts, divided into three groups , 37 Class III hyperdivergent group(18 males and 19 females, SN-Mn plane angle>39.5$^{\circ}$), 40 Class III neutral group(20 males and 20 females, SN-Mn plane angle : 32 ${\pm}$ 2.5$^{\circ}$) and 41 Class I normal occlusion group(20 males and 21 females). The intercanine, interpremolar, and intermolar width of the maxillary and mandibular study casts were measured, then the ratios of dental width to basal width and mandibular width to maxillary width were obtained. Basal arch width and dental arch width were measured to obtain the pure basal arch relation in transverse plane as ruled out the transverse dental compensation. The results were as follows 1. There were no significant differences in any ratios between Class III hyperdivergent group and Class III neutral group as different vertical pattern. 2. As the ratios of dental arch width to basal arch width between normal occlusion group and Class III neutral group were compared, the maxillary teeth flared buccally to the basal bone, and the mandibular teeth tilted lingually to the basal bone in Class III neutral group. 3. The ratios of mandibular arch width to maxillary arch width in basal arch level were significantly different in all regions. Maxillary basal arch width of Class III neutral group was narrower than that of normal occlusion group. 4. The ratios of mandibular arch width to maxillary arch width in teeth level were not significantly different between normal occlusion group and Class III neutral group. In spite of discrepancies of maxillary and mandibular basal arch width, the dental arch width of Class III malocclusion group compensated very well. At the presurgical orthodontic treatment in clinic, it would not be desirable to decompensate for compensated dental arch width too much, for obtaining an appropriate arch compatibility and good results for orthognathic surgery.

• The korean journal of orthodontics
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• v.30 no.4 s.81
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• pp.377-386
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• 2000

At the finishing stage, the use of asymmetric elastics to treat mild skeletal and dental midline discrepancies often creates several side effects such as canted occlusal plane, tipped incisors and unesthetic results. This report presents the clinical cases with midline discrepancies, following a differential diagnosis, optimal mechanics, and considerations in treatment. Differential diagnosis and treatment mechanics with three-piece basal archwire can obtain predictable midline correction with minimal side effects.