• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.255-255
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• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1063-1064
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• 2008

We have discovered a new single-layer environmental barrier for OLEDs. In storage at $65^{\circ}C$ and 85% relative humidity, OLED pixels encapsulated with this barrier have half-lives of approximately one year. We describe the fabrication and properties of the barrier, and results of accelerated storage tests.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.352.2-352.2
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• 2014

In this present work, we report a Cu-Mn alloy as a materials for the self-forming barrier process. And we investigated diffusion barrier properties of self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films were directly deposited onto low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), Cu (200) and Cu (220) peaks for both of Cu alloys. The self-formed layers were investigated by transmission electron microscopy. In order to compare barrier properties between Mn-based interlayer interlayer, thermal stability was measured with various low-k dielectrics. X-ray photoelectron spectroscopy analysis showed that chemical compositions of self-formed layer. The compositions of the Mn based self-formed barriers after annealing were determined by the C concentration in the dielectric layers.

• Journal of Soil and Groundwater Environment
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• v.21 no.1
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• pp.1-5
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• 2016

Capillary barriers, consisting of relatively fine-over-coarse materials, have been suggested as an alternative to traditional compacted soil covers. So, We were analysed to capillary barrier effect according to five cases of multi-layer cover systems. Water balance simulation was conducted with unsaturated flow model HELP to assess unsaturated hydraulic parameters such as hydraulic conductivity, climate affecting the performance of capillary barriers. Simulation were conducted for 5 Cases in the Ulsan area. Result of simulation indicated that three cases was formed unsaturated condition and capillary barrier effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.415-416
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• 2009

The tunnel barrier engineered charge trap flash (TBE-CTF) non-volatile memory using CRESTED tunneling barrier was fabricated by stacking thin $Si_3N_4$ and $SiO_2$ dielectric layers. Moreover, high-k based $HfO_2$ charge trap layer and $Al_2O_3$ blocking layer were used for further improvement of the NVM (non-volatile memory) performances. The programming/erasing speed, endurance and data retention of TBE-CTF memory was evaluated.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.4
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• pp.217-222
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• 2003

A new two-dimensional analytical model for the potential distribution and drain-induced barrier lowering (DIBL) effect of fully depleted short-channel Silicon-on-insulator (SOI)-MESFET's has been presented in this paper. The two dimensional potential distribution functions in the active layer of the device is approximated as a simple parabolic function and the two-dimensional Poisson's equation has been solved with suitable boundary conditions to obtain the bottom potential at the Si/oxide layer interface. It is observed that for the SOI-MESFET's, as the gate-length is decreased below a certain limit, the bottom potential is increased and thus the channel barrier between the drain and source is reduced. The similar effect may also be observed by increasing the drain-source voltage if the device is operated in the near threshold or sub-threshold region. This is an electrostatic effect known as the drain-induced barrier lowering (DIBL) in the short-gate SOI-MESFET's. The model has been verified by comparing the results with that of the simulated one obtained by solving the 2-D Poisson's equation numerically by using the pde toolbox of the widely used software MATLAB.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.25 no.1
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• pp.1-10
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• 2019

Environmental evaluation of two different oxygen high barrier films were performed using life cycle assessment. One of the films (traditional film) was composed of aluminum oxide coated PET film, ink, LDPE and LLDPE. Another film (new film) was consists of PET, ink, protein based coating material, LDPE, LLDPE. Main layer to achieve the high oxygen barrier for traditional film was aluminum oxide coated PET film, whereas the protein based coating material act as oxygen barrier layer for new film. Functional unit of this study was 1000 pouches made of traditional and new film. System boundary was factory to gate. The results of this study revealed that the new film shows better environmental performance for most of impact indicator than traditional film, except marine eutrophication and fine particulate matter formation due to extra coating process in new film system.

• Journal of the Korea Institute of Building Construction
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• v.15 no.4
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• pp.391-396
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• 2015

The demands about eco friendly space are increased as buildings are denser in downtown, and green system on the roof and the artificial ground are widely being applied. The construction of green system applies a waterproof layer, a root barrier and a protection concrete layer. Assembly of these many layers leads to a long construction term, and cause many defects. This study is to evaluate one layer-hybrid sheet which gets waterproof and root barrier performance simultaneously, which is developed to use in the new green system. As results, the performances of physical properties, durability, waterproof and root barrier not only exceeded quality standards but also showed excellent durability. In addition, mock-up test would be proceed to certify long term performance.

• Journal of the Korean institute of surface engineering
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• v.30 no.4
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• pp.272-280
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• 1997

The Thermal Barrier Coation(TBC) to improve the that barrier and wear resistant propenrty in high temperature ofthe aircraftength between the accumlation of the aircraft engine and the automobile engine has usually the two layer structure. One is a creamic top layer for heat insulation and the other is a metal bond layer to facilitate the bond strength between the top ceramic layer and the substrate. But, the coated layers should be peeled off because of the accumulation of the thermal stress by the differance of the thermal expantion coefficient between metal and ceramics in a hrat cyclic environment. In this study, the intermediate layer by plasm spray process was introduced to reduce the thermal stress. The powders of plasm spray coating were the Yttria Stabilized Zirconia (YSZ), the Magnesia Stabillized Zirconia(MSZ) and NiCrAlY. the intermediate layer was sprayed with the powders of the bond cast for the purpose of test were executed. The high temperature wear resistance tends to decreasnceee wear and thermal shock test were exeucuted. The high temperature were resistance of the YSZ TBC is better that of the MSZ TBC. The wearrsistance tends to decrease accoring to incresing the temperature between $400^{\circ}C$to $600^{\circ}C$. The thermal shock life of the 3 layer TBC with YSZ top casting was the most outstanding thermal shock rsisstasnce. This means that the intermediate layer should play an importnat roll to alleviate the diffrerence of the thermal expansion coef frcients between metallic layer and cermics layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.147-147
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• 2015

The multilayer structure of the organic light emitting diode has merits of improving interfacial characteristics and helping carriers inject into emission layer and transport easier. There are many reports to control hole injection from anode electrode by using transition metal oxide as an anode buffer layer, such as V2O5, MoO3, NiO, and Fe3O4. In this study, we apply thin films of LiF which is usually inserted as a thin buffer layer between electron transport layer(ETL) and cathode, as an anode buffer layer to reduce the hole injection barrier height from ITO. The thickness of LiF as an anode buffer layer is tested from 0 nm to 1.0 nm. As shown in the figure 1 and 2, the luminous efficiency versus current density is improved by LiF anode buffer layer, and the threshold voltage is reduced when LiF buffer layer is increased up to 0.6 nm then the device does not work when LiF thickness is close to 1.0 nm As a result, we can confirm that the thin layer of LiF, about 0.6 nm, as an anode buffer reduces the hole injection barrier height from ITO, and this results the improved luminous efficiency. This study shows that LiF can be used as an anode buffer layer for improved hole injection as well as cathode buffer layer.