• 한국재료학회지
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• 제17권9호
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• pp.463-468
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• 2007

The interdiffusion characteristics of Cu-plug/Capping Layer/NiSi contacts were investigated. Capping layers were deposited on Ni/Si to form thermally-stable NiSi and then were utilized as diffusion barriers between Cu/NiSi contacts. Four different capping layers such as Ti, Ta, TiN, and TaN with varying thickness from 20 to 100 nm were employed. When Cu/NiSi contacts without barrier layers were furnace-annealed at $400^{\circ}C$ for 40 min., Cu diffused to the NiSi layer and formed $Cu_3Si$, and thus the NiSi layer was dissociated. But for Cu/Capping Layers/NiSi, the Cu diffusion was completely suppressed for all cases. But Ni was found to diffuse into the Cu layer to form the Cu-Ni(30at.%) solid solution, regardless of material and thickness of capping layers. The source of Ni was attributed to the unreacted Ni after the silicidation heat-treatment, and the excess Ni generated by the transformation of $Ni_2Si$ to NiSi during long furnace-annealing.

• 반도체디스플레이기술학회지
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• 제20권3호
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• pp.22-26
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• 2021

Thin-film encapsulation (TFE) technology is most effective in preventing water vapor and oxygen permeation in the organic light emitting diodes (OLED). Of those, a laminated structure of Al₂O₃ and MgO were applied to provide efficient barrier performance for increasing the stability of devices in air. Atomic layer deposition (ALD) method is known as the most promising technology for making the laminated Al₂O₃/MgO and is used to realize a thin film encapsulation technology in organic light-emitting diodes. Atomic layer deposited inorganic films have superior barrier performance and have advantages of excellent uniformity over large scales at relatively low deposition temperatures. In this study, the control system of the MgCP₂ precursor for the atomic layer deposition of MgO was established in order to deposit the MgO layer stably by the injection time of second level and the stable heating temperature. The deposition rate was obtained stably to be from 4 to 10 Å/cycle using the injection pulse times ranging from 3 to 12 sec and a substrate temperature ranging from 80 to 150 ℃.

• Journal of Ceramic Processing Research
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• 제13권spc1호
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• pp.140-144
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• 2012

Ga-doped ZnO (GZO) was a limit of application on the photovoltaic devices such as CIGS, CdTe and DSSC requiring high process temperature, because it's electrical resistivity is unstable above 300 ℃ at atmosphere. Therefore, ZTO (zinc tin oxide) was introduced in order to improve permeability and thermal stability of GZO film. The resistivity of GZO (300 nm) single layer increased remarkably from 1.8 × 10-3Ωcm to 5.5 × 10-1Ωcm, when GZO was post-annealed at 400 ℃ in air atmosphere. In the case of the ZTO (150 nm)/GZO (150 nm) double layer, resistivity showed relatively small change from 3.1 × 10-3Ωcm (RT) to 1.2 × 10-2Ωcm (400 ℃), which showed good agreement with change of carrier density. This result means that ZTO upper layer act as a barrier for oxygen at high temperature. Also ZTO (150 nm)/GZO (150 nm) double layer showed lower WVTR compared to GZO (300 nm) single layer. Because ZTO has lower WVTR compared to GZO, ZTO thin film acts as a barrier by preventing oxygen and water molecules to penetrate on top of GZO thin film.

• 한국국방경영분석학회지
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• 제11권2호
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• pp.6-14
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• 1985

The layered multi-barrier defense situation against penetrating enemy threat is analytically modeled towards minimizing the penetration probability. Each layer is characterized by probability of detection and probability of kill given detection. The two capabilities are assumed independent. Detection in a layer, however, affects detection performance in subsequent layers. The following three models were formulated and investigated: (1) 'Model A' permits increase of detection performance in only the next barrier, (2) 'Model B' permits the increase in all subsequent barriers linearly, and (3) 'Model C' expresses the increase in an asymptotic exponential way. The best and the worst barrier combinations are determined through model exercise and model performances are compared through sensitivity analysis for the 'intensification factor.'

• Bulletin of the Korean Chemical Society
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• 제33권8호
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• pp.2675-2678
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• 2012

Studies on niobium anodization in the mixture of 1 M $H_3PO_4$ and 1 wt % HF at galvanostatic anodization are described here in detail. Interestingly, duplex niobium oxide consisting of thick barrier oxide and correspondingly thick porous oxide was prepared at a constant current density of higher than 0.3 $mAcm^{-2}$, whereas simple porous type oxide was formed at a current density of lower than 0.3 $mAcm^{-2}$. In addition, simple barrier or porous type oxide was obtained by galvanostatic anodization at a single electrolyte of either 1 M $H_3PO_4$ or 1 wt % HF, respectively. The formation mechanism of duplex type structures was ascribed to different forming voltages required for moving anions.

• 한국세라믹학회지
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• 제43권7호
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• pp.415-420
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• 2006

The residual stresses in the interface region of the Thermal Barrier Coating (TBC)/Thermally Grown Oxide (TGO)/Bond Coat (BC) were calculated on the TBC-coated superalloy samples using a Finite Element Method (FEM). It was found that the stress distribution of the interface boundary was dependent upon mainly the geometrical shape or its aspect ratio and the thickness of TGO layer, which was formed by growth and swelling behavior of oxide layer. Maximum compressive residual stress in the TBC/TGO interface is higher than that of the TGO/bond coat interface, and the tensile stress had nothing to do with change of an aspect ratio. The compressive residual stresses in the TBC/TGO and TGO/bond coat interface region increased gradually with the TGO growth.

• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1065-1069
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• 2002

The addressing time should be reduced by modifying cell structure and/or driving method in order to replace the dual scan system by single scan and increase the luminance in large ac plasma display panel(PDP). In this paper, the effects of the addressing time was decreased with decreasing thickness of dielectric layer on the front glass and thickness of white dielectric layer on the rear glass. the decreasing rate were 160ns/10$\mu\textrm{m}$ and 270ns/10$\mu\textrm{m}$, respectively Also in case of decreasing the height of barrier rib, addressing time was decreased at the rate of Sons/10$\mu\textrm{m}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.189-190
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• 2008

The electrical characteristics of band-gap engineered tunneling barriers consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were investigated. The band structure of stacked tunneling barriers was studied and the effectiveness of these tunneling barriers was compared with that of the conventional tunneling barrier. The band-gap engineered tunneling barriers show the lower operation voltage, faster speed and longer retention time than the conventional $SiO_2$ tunnel barrier. The thickness of each $SiO_2$ and $Si_3N_4$ layer was optimized to improve the performance of non-volatile memory.

• 대한전자공학회논문지SP
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• 제48권6호
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• pp.68-76
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• 2011

본 논문에서는 기존 무안경식 3D 디스플레이의 제한된 시야각으로 인한 3D 시청에서의 불편함을 해소하기 위해 새로운 패렐랙스 배리어 방식을 제안한다. 제안된 방식은 기존 패렐랙스 배리어의 TN-LCD 구조에서 LC를 공유하는 이중 계층의 ITO 쌍을 추가하였으며, 시선 추적 장치에 의해 시청자의 위치를 감지하여 자동으로 3D 시야각을 시청자의 위치에 맞도록 변화 시킬 수 있는 이중 계층의 패렐랙스 구조를 갖는다. 제안한 이중 계층 패렐랙스 배리어 방식을 시제품으로 구현하고 실험한 결과, 제안한 방식의 유효성을 확인할 수 있었다.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2002년도 춘계학술대회논문집
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• pp.1222-1227
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• 2002

Noise barrier is used to reduce traffic noise. The effect of a noise barrier depends not only on the materials, but also on the physical properties such as density, height and degree of absorption, etc. Typical absorptive noise barrier is used sound absorbing material, such as glass wool and mineral wool. The goal of this study is to develope excellent absorptive noise barrier using a polyester. Laboratory measurements were peformed with various thicknesses, density and layer of absorber in a reverberation room.