• Korean Journal of Medicinal Crop Science
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• v.28 no.2
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• pp.152-166
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• 2020

Background: Ginsenosides, which have various physiological activities, are known to be abundant in the leaves and roots of ginseng. Ginseng sprouts can be used as a fresh vegetable and roots, stems, and leaves of ginseng can be consumed. This study aimed to investigate the effect of carbon dioxide treatment and the modified atmosphere (MA) packaging method in suppressing quality deterioration during the distribution of ginseng sprouts. Methods and Results: Ginseng sprouts were packed using Styrofoam, barrier film + non gas treatment, barrier film + gas treatment, 15 ㎛ polyamide (PA) double film + non gas treatment, 15 ㎛ PA double film + gas treatment, 25 ㎛ PA film + non gas treatment, or 25 ㎛ PA film + gas treatment. Quality parameters including gas composition, relative humidity, chlorophyll SPAD (Soil Plant Analysis Development) value, firmness, and rate of quality loss in ginseng sprouts were monitored at the following temperatures: 20℃, and 10℃. Ginseng sprouts packaged with 25 ㎛ PA film showed loss in quality because of wilting owing to low relative humidity within the film. Chlorophyll and firmness did not differ between film and gas treatments. The time point at which the combined loss from softening and decay owing to fungal, and bacterial infection and wilt reached 20% was considered the limit of distribution. At 20℃, the packaging not included in the 20% distribution loss rate limit or up to 7 days was 15 ㎛ PA double film + gas treatment. At 10℃, the packaging not included in the 20% distribution loss rate limit for up to 18 days were barrier film + gas treatment and 15 ㎛ PA double film + gas treatment. Conclusions: The film packaging suitable for the distribution of ginseng sprouts was found to be the barrier film and PA film with low gas permeability and maintaining hygroscopicity at 95% relative humidity. To prevent the loss in quality of ginseng sprouts, gas treatment (8% of O₂ and 18% of CO₂) in the film was found to be more suitable than no gas treatment for inhibition of decay.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.3
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• pp.97-103
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• 2023

Barrier films for transparent packaging materials with excellent moisture barrier properties are prepared, utilizing a nanoclay dispersion coating layer formed after a pretreatment process of plasma activation surface treatment process under vacuum at room temperature. Attention is paid on optimizing the coupling additive through the appropriate crosslinking process and optimal dispersion process of the coating process to enhance adhesion. Analysis of the functional coating thin film shows that the water vapor transmission rate is less than 10 g/m²/24 hrs (ASTM F-1249) and the oxygen transmission rate is less than 30 cc/m²/24 hrs (ASTM D3985). It is shown that water barrier properties of coating thin film prepared in this study are greater than conventional untreated films by 10 times or more. The thickness of the transparent gas barrier film is within 0.1 mm, and the transparent gas barrier complex is implemented in two layers. In the study of PET thin film interface characteristics, FT-IR experimental analysis shows the reaction activity was optimized at RDS 1.125 %.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.425-430
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• 2009

$ZrO_2$ film was deposited by facing target sputtering (FTS) system on polyethylene naphthalate (PEN) substrate as a gas barrier layer for flexible organic light emitting devices (FOLEDs), In order to control the heat of the FTS system caused by the ion bombardment in the cathode compared with the conventional sputtering system, the process characteristics of the FTS apparatus are investigated under various sputtering conditions such as the distance between two targets ($d_{TT}$), the distance between the target and the substrate ($d_{TS}$), and the deposition time. The $ZrO_2$ film by the FTS system can reduce the damage on the films because the ion bombardment with high-energy particles like gamma-electrons, Moreover, the $ZrO_2$ film with optimized condition ($d_{TT}$=140 mm) as a function of the distance from center to edge showed a very uniform thickness below 5 % for a deposition time of 3 hours, which can improve the interface property between the anode and the plastics substrate for flexible displays, It is concluded that the $ZrO_2$ film prepared by the FTS system can be applied as a gas barrier layer or an interlayer between the anode and the plastic substrate with good properties of an uniform thickness and a low deposition-temperature.

• Journal of the Korean Society for Heat Treatment
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• v.31 no.4
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• pp.187-193
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• 2018

In this study, the electrical conductivity, transmittance and gas barrier properties of diamond-like carbon (DLC) thin films were studied. DLC is an insulator, and has transmittance and oxygen gas barrier properties varying depending on the thickness of the thin film. Recently, many researchers have been trying to apply DLC properties to specific industrial conditions. The DLC thin films were deposited by PECVD (Plasma Enhanced Chemical Vapor Deposition) process. The doping gas was used for the DLC film to have electrical conductivity, and the optimum conditions of transmittance and gas barrier properties were established by adjusting the gas ratio and DLC thickness. In order to improve the electrical conductivity of the DLC thin film, $N_2$ doping gas was used for $CH_4$ or $C_2H_2$ gas. Then, a heat treatment process was performed for 30 minutes in a box furnace set at $200^{\circ}C$. The lowest sheet resistance value of the DLC film was found to be $18.11k{\Omega}/cm^2$. On the other hand, the maximum transmittance of the DLC film deposited on the PET substrate was 98.8%, and the minimum oxygen transmission rate (OTR) of the DLC film of $C_2H_2$ gas was 0.83.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.11-14
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• 2022

In this work, we evaluated the Al₂O₃ film, which was deposited by atomic layer deposition, degraded by exposure to harsh environments. The Al₂O₃ films deposited by atomic layer deposition have long been used as a gas diffusion barrier that satisfies barrier requirements for device reliability. To investigate the barrier and mechanical performance of the Al₂O₃ film with increasing temperature and relative humidity, the properties of the degraded Al₂O₃ film exposed to the harsh environment were evaluated using electrical calcium test and tensile test. As a result, the water vapor transmission rate of Al₂O₃ films stored in harsh environments has fallen to a level that is difficult to utilize as a barrier film. Through water vapor transmission rate measurements, it can be seen that the water vapor transmission rate changes can be significant, and the environment-induced degradation is fatal to the Al₂O₃ thin films. In addition, the surface roughness and porosity of the degraded Al₂O₃ are significantly increased as the environment becomes severer. the degradation of elongation is caused by the stress concentration at valleys of rough surface and pores generated by the harsh environment. Becaused the harsh envronment-induced degradation convert amorphous Al₂O₃ to crystalline structure, these encapsulation properties of the Al₂O₃ film was easily degraded.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1816-1818
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• 1996

A micro-size nonthermal plasma generator, using a $SiO_2$ film as a dielectric barrier, has been studied experimentally for a high frequency ac voltage in 2LPM oxygen gas fed. The $SiO_2$ film as a micro-size dielectric barrier was made by the wet oxidation of n-type Si wafer($220[{\mu}mt]$). It can be generated ozone, as a nonthermal plasma intensity parameter, at very low level of applied voltage about 1[kV] by using the micro-size dielectric barrier. As a result, in case that have no air gap spacing i.e. surface discharge case shows relatively higher ozone concentration rather than that case of the micro-airgap spacing.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.280-280
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• 2012

We examined ammonia diffusion on the surface of amorphous ice film through the measurement of decreasing residual quantity of $NH_3$ molecules compared to $H_2O$. The populations of $NH_3$ molecules on the surface of amorphous ice were monitored by using the techniques of temperature programmed reactive ion scattering (TPRIS) method. The ratio of intensity between ammonia and water was examined as a function of time at controlled temperature. When ammonia molecules were externally added onto an ice film at a temperature of 80 K, ammonia coverage with regard to ice was 0.12-0.16 ML. The intensity of ammonia molecules on the surface of ice decreased as time increased and the extent of decreased intensity of ammonia increased as controlled temperature increased. Moreover, energy barrier was estimated to be $51kJmol^{-1}$ on amorphous ice film. The results of the experiment indicate that ammonia molecules have a property of vertical diffusion into amorphous ice and the energy barrier of ammonia diffusion into bulk of ice is higher than that of hydrogen bonding.

• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.1-4
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• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Atomic layer deposition (ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. Moisture permeation has a mechanism to pass through defects, Thin Film Encapsulation using inorganic / organic / inorganic hybrid film has been used as promising technology. $Al_2O_3$ / Polymer / $Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.178-178
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• 2010

With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

• Polymer(Korea)
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• v.37 no.2
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• pp.249-253
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• 2013

From poly(lactic acid) (PLA) and poly(propylene carbonate) (PPC) synthesized using $CO_2$, a PLA/PPC/PLA layered film is prepared by coextrusion and then stretched to uniaxial orientation. The mechanical, optical, and barrier properties and shrinkage of the prepared film were investigated in detail. The maximum shrinkage of PLA/PPC/PLA film reached to 60% at $75^{\circ}C$. With increasing PPC content, the ratio of shrinkage of the film was increased and its shrinkagerate was increased. The ratio of shrinkage of the film decreased with increasing stretching temperature. The prepared film has oxygen and vapor transmission barrier properties. In this study, the PLA/PPC/PLA film is expected to be commercialized as a environmentally friendly shrinkable film.