• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.308-310
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• 2022

Ultrawide bandgap gallium oxide (Ga₂O₃) semiconductors are known to have excellent photocatalytic properties due to their high redox potential. In this study, CO₂ reduction is demonstrated using nanostructured Ga₂O₃ photocatalyst under ultraviolet (254 nm) light source conditions. After the CO₂ reduction, C₂H₄ remained as a by-product in this work. Nanostructured Ga₂O₃ photocatalyst also showed an excellent endurance characteristic. Photogenerated electron-hole pairs boosted the CO₂ reduction to C₂H₄ via nanostructured Ga₂O₃ photocatalyst, which is attributed to the ultrawide and almost direct bandgap characteristics of the gallium oxide semiconductor. The findings in this work could expedite the realization of CO₂ reduction and a simultaneous C₂H₄ production using a low cost and high performance photocatalyst.

• Journal of IKEEE
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• v.20 no.2
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• pp.192-195
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• 2016

In this paper, we present a nanopower CMOS bandgap voltage reference working in sub-threshold region without resisters and bipolar junction transistors (BJT). Complimentary to absolute temperature (CTAT) voltage generator was realized by using two n-MOSFET pair with body bias circuit to make a sufficient amount of CTAT voltage. Proportional to absolute temperature (PTAT) voltage was generated from differential amplifier by using different aspect ratio of input MOSFET pair. The proposed circuits eliminate the use of resisters and BJTs for the operation in a sub-1V low supply voltage and for small die area. The circuits are implemented in 0.18um standard CMOS process. The simulation results show that the proposed sub-BGR generates a reference voltage of 290mV, obtaining temperature coefficient of 92 ppm/$^{\circ}C$ in -20 to $120^{\circ}C$ temperature range. The circuits consume 15.7nW at 0.63V supply.

• ETRI Journal
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• v.36 no.2
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• pp.317-320
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• 2014

A balanced RF duplexer with low interference in an extremely narrow bandgap is proposed. The Long-Term Evolution band-7 duplexer should be designed to prevent the co-existence problem with the WiFi band, whose fractional bandgap corresponds to only 0.7%. By implementing a hybrid bulk acoustic wave (BAW) structure, the temperature coefficient of frequency (TCF) value of the duplexer is successfully reduced and the suppressed interference for the narrow bandgap is performed. To achieve an RF duplexer with balanced Rx output topology, we also propose a novel balanced BAW Rx topology and RF circuit block. The novel balanced Rx filter is designed with both lattice- and ladder-type configurations to ensure excellent attenuation. The RF circuit block, which is located between the antenna and the Rx filter, is developed to simultaneously function as a balance-tounbalance transformer and a phase shift network. The size of the fabricated duplexer is as small as $2.0mm{\times}1.6mm$. The maximum insertion loss of the duplexer is as low as 2.4 dB in the Tx band, and the minimum attenuation in the WiFi band is as high as 36.8 dB. The TCF value is considerably lowered to $-16.9ppm/^{\circ}C$.

• Journal of The Institute of Information and Telecommunication Facilities Engineering
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• v.2 no.1
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• pp.52-62
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• 2003

In this paper, photonic bandgap(PBG) bandstop filters which are composed of periodically etched circles in the ground plane show good microwave characteristics with the harmonic suppression on stopband. The PBG structures were analyzed using a finite-difference time-domain(FDTD) simulation and experimental measurement. The FDTD technique is used because it can simulate arbitrary 3-D structures and provide broadband frequency response. The analysis results are presented it is the same that only one row of etched circles and 2-dimension three rows of etched circles. And we show the PBG resonator characteristics between etched circles using field pattern and frequency characteristics as functions of etched circle number n, etched circle radius r and period a.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.7
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• pp.1182-1190
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• 2001

In this paper, microstrip photonic bandgap (PBG) structure with special perforation patterns etched on the line itself is analyzed and optimized in shape, then used for harmonic tuning of power amplifier. This PBG has an advantage in being fabricated and grounded. The dimension of unit lattice is enlarged vertically, but its input and output line maintain 50 Ω using tapered line. This modification from original structure can lessen possible error in etching PCB. The analysis and design of PBG structure are acquired from using EM simulation. The measured insertion loss of the final structure is 0.3 ∼0.4 dB, and its bandwidth of stopband is 6∼7 GHz. Measured results of improved characteristics by using PBG structure at the output of the power amplifier are 0.72∼0.99 dB in output power, 1.14∼7.8 % in PAE, and 1 dBc in the third IMD.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.1
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• pp.65-68
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• 2004

The performances of millimeter wave Power amplifier have been improved by using PBG (photonic bandgap structure) in this paper. The PBG structure has been optimized to obtain the lowpass characteristics in Ka band and employed at output port of Ka band power amplifier. The harmonics of the power amplifier have been suppressed by the PBG of output port and the proposed PBG has suppressed the second harmonic to 40dBc around 50 GHz. The improvements of IMD and PAE of the amplifier employing the PBG structure are obtained $15\%$ and $25\%$, compared with those of the conventional Ka band power amplifier, respectively.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3340-3344
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• 2013

The fabrication of polymer field-effect transistors with good electrical properties requires the minimization of molecular defects caused by low molecular weight (MW) fractions of a conjugated polymer. Here we report that the electrical properties of a narrow bandgap conjugated polymer could be dramatically improved as a result of dipping a thin film into a poor solvent. The dipping time in hexanes was controlled to efficiently eliminate the low molecular weight fractions and concomitantly improve the molecular ordering of the conjugated polymer. The correlation between the structural order and the electrical properties was used to optimize the dipping time and investigate the effects of the low MW fraction on the electrical properties of the resulting thin film.

• ETRI Journal
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• v.38 no.5
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• pp.903-910
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• 2016

We propose a novel multi-stack (MS) technique for a compact and wideband electromagnetic bandgap (EBG) structure in high-speed multilayer printed circuit boards. The proposed MS technique efficiently converts planar EBG arrays into a vertical structure, thus substantially miniaturizing the EBG area and reducing the distance between the noise source and the victim. A dispersion method is presented to examine the effects of the MS technique on the stopband characteristics. Enhanced features of the proposed MS-EBG structure were experimentally verified using test vehicles. It was experimentally demonstrated that the proposed MS-EBG structure efficiently suppresses the power/ground noise over a wideband frequency range with a shorter port-to-port spacing than the unit-cell length, thus overcoming a limitation of previous EBG structures.

• Advances in nano research
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• v.14 no.5
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• pp.451-461
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• 2023

Two-dimensional (2D) materials have been attracting attention since graphene monolayer was firstly separated. However, after an explosive boom, there is always quandary and stagnancy following and soon will come the refractory period of capital market. To avoid that undesired future, a paradigm of quasi 2D monolayer has been contemplated and devised in this article, with examples studied theoretically. The results show the general dynamic nonlinearity, and the expected tunability of bandgap without extra doping or substitution. These together suggest its intriguing both electronical and mechanical properties, which will enrich the arsenal of potential 2D materials.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.4
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• pp.568-576
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• 2017

This paper presents a clock and data recovery circuit with an adaptive loop bandwidth calibration scheme and the idle power saved frequency acquisition. The loop bandwidth calibration adaptively controls injection currents of the main loop with a trimmable bandgap reference circuit and trains the VCO to operate in the linear frequency control range. For stand-by power reduction of the phase detector, a clock gating circuit blocks 8-phase clock signals from the VCO and cuts off the current paths of current mode D-flip flops and latches during the frequency acquisition. 77.96% reduction has been accomplished in idle power consumption of the phase detector. In the jitter experiment, the proposed scheme reduces the jitter tolerance variation from 0.45-UI to 0.2-UI at 1-MHz as compared with the conventional circuit.