• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.785-788
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• 2007

The newly proposed badgap reference voltage generator is insensible to PVT(process, voltage, temperature) variation and has a lower minimum supply voltage, which is required for stable operation. The simulation result is that the bandgap reference voltage generator starts operation at 1.0V of supply voltage. The layout of the bandgap reference voltage generator is designed using Magnachip $0.18{\mu}m$ DDI process, and the size is $409.36{\mu}m$ ${\times}$ $435.46{\mu}m$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.340.1-340.1
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• 2014

본 실험에서는 Ag두께 변화에 따른 투과율과 Energy bandgap의 변화를 알아보기 위해 RF Sputter장비와 Evaporator장비를 사용하여 IGZO, ZnO, AZO OMO 구조로 Low-e 코팅된 Glass를 제작하였다. $3cm{\times}3cm$의 Corning1737 유리기판에 RF Sputtering 방식으로 Oxide layer를 증착 하였고 Evaporator장비로는 Metal layer인 Ag막을 증착하였다. Oxide layer 증착 시 RF Sputter장비의 조건은 $3.0{\times}10^{-6}Torr$이하로 하였으며, 증착압력은 $6.0{\times}10^{-3}Torr$, 증착온도는 실온으로 고정하였다. Metal layer 증착 시 Evaporator장비의 조건은 $5.0{\times}10^{-6}Torr$이하, 전압은 0.3 V, Rotate 2 rpm으로 고정하였다. 실험 변수로는 Ag 두께를 5,7,9,11,13 nm로 변화를 주어 실험을 진행하였다. 투과도 측정 장비를 사용하여 각 샘플을 측정한 결과 IGZO의 경우 가시광영역의 평균 투과율이 80% 이상이며 Ag두께가 5nm일 때부터 자외선 영역의 빛을 차단하여 low-e 특성을 나타내었다. 이는 산화물인 IGZO가 결정질인 AZO, ZnO 보다 낮은 표면거칠기를 가지기 때문이다. Ag 두께에 따른 각 물질의 Optical energy bandgap 분석결과 Ag 두께가 증가할수록 IGZO는 4.65~4.5 eV, AZO는 4.6~4.4 eV, ZnO는 4.55~4.45 eV로 Energy bandgap은 감소하였다. AFM장비를 이용하여 각 샘플의 표면 Roughness 측정 결과 Ag 두께가 증가할수록 표면거칠기도 증가하는 경향을 나타내었다.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.53-56
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• 2018

In this paper, a CMOS bandgap voltage reference that is not sensitive to changes in the external environment is presented. Large OLED display panels need high supply voltage. MOSFET devices with high voltage are sensitive to the output voltage due to the channel length modulation effect. The self-cascode circuit was applied to the bandgap reference circuit. Simulation results show that the maximum output voltage change of the basic circuit is 77mV when the supply voltage is changed from 10.5V to 13.5V, but the proposed circuit change is improved to 0.0422mV. The improved circuit has a low temperature coefficient of $9.1ppm/^{\circ}C$ when changing the temperature from $-40^{\circ}C$ to $140^{\circ}C$. Therefore, the proposed circuit can be used as a reference voltage source for circuits that require a high supply voltage.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.39.2-39.2
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• 2010

In this work we have investigated electrical and optical properties of interface for ITO/Si with shallow doped emitter. The ITO is prepared by DC magnetron sputter on p-type monocrystalline silicon substrate. As an experimental result, The transmittance at 640nm spectra is obtained an average transmittance over 85% in the visible range of the optical spectrum. The energy bandgap of ITO at oxygen flow from 0% to 4% obtained between 3.57eV and 3.68eV (ITO : 3.75eV). The energy bandgap of ITO is depending on the thickness, sturcture and doping concentration. Because the bandgap and position of absorption edge for degenerated semiconductor oxide are determined by two competing mechanism; i) bandgap narrowing due to electron-electron and electron-impurity effects on the valance and conduction bands (> 3.38eV), ii) bandgap widening by the Burstein-Moss effect, a blocking of the lowest states of the conduction band by excess electrons( < 4.15eV). The resistivity of ITO layer obtained about $6{\times}10^{-4}{\Omega}cm$ at 4% of oxygen flow. In case of decrease resistivity of ITO, the carrier concentration and carrier mobility of ITO film will be increased. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission line method(TLM). As an experimental result, the contact resistance was obtained $0.0705{\Omega}cm^2$ at 2% oxygen flow. It is formed ohmic-contact of interface ITO/Si substrate. The emitter series resistance of ITO/Si with shallow doped emitter was obtained $0.1821{\Omega}cm^2$. Therefore, As an PC1D simulation result, the fill factor of EWT solar cell obtained above 80%. The details will be presented in conference.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.1
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• pp.1-16
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• 2023

Recently, the shift to next-generation wide-bandgap (WBG) power semiconductor for electric vehicle is accelerated due to the need to improve power conversion efficiency and to overcome the limitation of conventional Si power semiconductor. With the adoption of WBG semiconductor, it is also required that the packaging materials for power modules have high temperature durability. As an alternative to conventional high-temperature Pb-based solder, Ag sintering die attach, which is one of the power module packaging process, is receiving attention. In this study, we will introduce the recent research trends on the Ag sintering die attach process. The effects of sintering parameters on the bonding properties and methodology on the exact physical properties of Ag sintered layer by the realization 3D image are discussed. In addition, trends in thermal shock and power cycle reliability test results for power module are discussed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.111-111
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• 2003

The peroxo titanic acid solution was successfully prepared using titanium trichloride as a precursor. The basic properties of the TiO2 film prepared by the solution were investigated in view of phase change, bandgap energy, crystalline size etc. The film displayed amorphous TiO$_2$ at room temperature, anatase above 281$^{\circ}C$ and a mixture of anatase and rutile at 99$0^{\circ}C$, The crystalline size increases with annealing temperatures, while the bandgap energies decrease due to the quantum size effect and the formation of rutile phase which has low bandgap energy. As a result of TG-DTA, it was found that annealing treatment at 99$0^{\circ}C$ for 2h formed a mixtures of anatase and rutile through three steps: (1) the removal of physically adsorbed water (2) the decomposition of peroxo group (3) amorphous-anatase or anatase-rutile phase transformation.

• Journal of information and communication convergence engineering
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• v.14 no.3
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• pp.184-190
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• 2016

We present experimental demonstrations of electromagnetic bandgap (EBG) structures for the wideband suppression of radiated emissions from a power bus in high-speed printed circuit boards (PCBs). In most of the PCB designs, a parallel plate waveguide (PPW) structure is employed for a power bus. This structure significantly produces the wideband-radiated emissions resulting from parallel plate modes. To suppress the parallel plate modes in the wideband frequency range, the power buses based on the electromagnetic bandgap structure with a defected ground structure (DGS) are presented. DGSs are applied to a metal plane that is connected to a rectangular EBG patch by using a via structure. The use of the DGS increases the characteristic impedance value of a unit cell, thereby substantially improving the suppression bandwidth of the radiated emissions. It is experimentally demonstrated that the DGS-EBG structure significantly mitigates the radiated emissions over the frequency range of 0.5 GHz to 2 GHz as compared to the PPW.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.4
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• pp.139-142
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• 2002

Contactless electroreflectance measurements at room temperature were used to determine the bandgap energies of Zn$_{1-x}$ Mg$_{x}$O thin films grown by metal-organic vapor phase epitaxy. It is found that the bandgap energy increases monotonically with the Mg composition x, up to the highest composition measured (x=0.45). The obtained correlation between the bandgap energy and the Mg composition can be used in the analysis of the electronic structure of ZnO/Zn$_{1-x}$ Mg$_{x}$O heterostructures at room temperature.ature.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1447-1450
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• 2007

The electrical properties of organic lightemitting devices (OLEDs) with wide-bandgap impurity-doped emitting layers (EML) were investigated. While the luminous efficiency of OLEDs with a NPB or a DPVBi-doped $Alq_3$ EML did not vary significantly with the current density, that of the OLEDs with a BCP-doped $Alq_3$ EML changed dramatically.

• Proceedings of the KIEE Conference
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• 2006.10c
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• pp.609-611
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• 2006

This paper describes a CMOS sub-bandgap reference using Pseudo-Resistors which can be widely used in flash memory, DRAM, ADC and Power management circuits. Bandgap reference circuit operates weak inversion for reducing power consumption and uses Pseudo-Resistors for reducing the chip area, instead of big resistor. It is implemented in 0.35um Standard 1P4M CMOS process. The temperature coefficient is 5ppm/$^{\circ}C$ from $40^{\circ}C$ to $100^{\circ}C$ and minimum power supply voltage is 1.2V The core area is 1177um${\times}$617um. Total current is below 2.8uA and output voltage is 0.598V at $27^{\circ}C$.