• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.8
• /
• pp.368-374
• /
• 2002

In this paper, we introduce a procedure to obtain a equivalent circuit of comb-line band pass filter. By employing equivalent circuits of each asymmetrical coupled line. we composed the full equivalent circuit of comb-line bandpass filter and derived simple design equations for extracting each line's impedance. To show the validity of design equations, we simulated and fabricated a planar type comb-line bandpass filter, which has center frequency 1.8㎓, band-width 50㎒ and four resonators. The resulting filter is very compact, have broad stop band with the second pass band centered at four times the center frequency of the first pass band. The experimental results show exact performances of design specification.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.49 no.7
• /
• pp.65-70
• /
• 2012

In this paper, a compact UWB (Ultra Wideband) BPF(Band-Pass Filter) with dual notched bands is proposed using a hybrid Composited Right-Left Handed (CRLH) and Defected Ground Structure (DGS). To avoid the interferences such as Wireless LAN (Center frequency: 2.4GHz and 5.8GHz), the CRLH is employed to obtain the dual notched bands and the DGS is used to obtain the wide stop-band above the pass-band. The fabricated filter has good performance and has more than 30dB rejection at the center frequency of 2.4 GHz and 5.8GHz. The dual notched bands are easily movable by changing the CRLH parameter. Also the insertion loss is less than 0.4dB in the lower pass-band and 0.7dB in the upper pass-band, and it has small group delay variation less than 0.6ns. The size of the fabricated filter is very compact (17mm*17mm).

• Journal of Advanced Navigation Technology
• /
• v.13 no.1
• /
• pp.41-47
• /
• 2009

In this paper, a band pass filter with a rejection band is proposed for UWB(Ultra Wide Band) communication system. First, low pass filter accessed cut off frequency of 10.2 GHz was designed using structure stepped impedance. And high pass filter accessed cut of frequency of 3.2 GHz was designed using parallel short-stub. There was implemented composite connection of designed low pass filter and high pass filter. The relative dielectric constant, the height, the loss tangent of the PCB substrate were ${\varepsilon}_r$=2.2, h=0.508 mm and loss tangent = 0.0009 respectively. The fabricated band pass filter shows a compact size of 3 cm. The fabricated band pass filter was characterized using 37169A VNA(Vector Network Analyzer). And measured result were obtained 7.5 GHz of bandwidth and -10 dB of return loss and -3 dB of insertion loss from pass band. The result of the research can be used for the UWB communications and MIC/MMIC, RFIC system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.22 no.12
• /
• pp.1086-1096
• /
• 2011

In this paper, we present the trisection band-pass filter with a transmission zero at 2.63 GHz, which has a center frequency of 2.44 GHz, relative bandwidth of 5 %, and return loss of 18 dB, based on a multi-port ElectroMagnetic simulation. The coupling matrix for the trisection filter is calculated and this filter is transformed into band-pass filter prototype through a lossless 2-port circuit transformation. The J-inverter values and slope parameters of each individual resonator are computed using an EM simulation Y-parameters of the filter with multi port. The dimensions of desired filter are determined by matching the computed J-inverter and susceptance slope parameters to those of the prototype band-pass filter. Undesired cross-couplings are found to occur which does not appear in the prototype trisection filter. To overcome the problem of undesired couplings, the filter was optimized to satisfy the same frequency response of prototype filter. The validity of the proposed design method was verified through the implementation of the designed and optimized filter.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.61 no.11
• /
• pp.1700-1705
• /
• 2012

This study is focusing on ripple elimination in the band pass filter. There are generally two design methods in IIR filter design, which are a direct method and an indirect one. The indirect design method that designs the digital IIR LPF using the prototype analog LPF is applied to this study. A Butterworth filter and a Chebyshev filter are the typical prototype analog LPFs. This study shows characteristics of the digital IIR LPFs that are transformed from the prototype analog LPFs. The designed Butterworth and Chebyshev IIR LPFs are also designed as the band pass filters by frequency transformation in order to compare with the proposed cascading Chebyshev BPFs. This study shows frequency characteristics between the transformed IIR BPFs and the proposed cascading Chebyshev BPFs as well. The proposed cascading Chebyshev BPF is designed by cascading the different orders of Chebyshev BPFs. The aspect of the cascading filter is offsetting the ripples to descend them while the pass band ripples of the Chebyshev filter are ascending and vice versa. The designed cascading Chebyshev filter shows the flatness and the sharpness, which represent the advantages of Butterworth filter in the pass band and of Chebyshev filter in the transition band respectively. This result verifies the validity of the designed filter.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.35 no.2
• /
• pp.165-171
• /
• 2022

The SiO₂/TiO₂ multilayer thin films used for narrow band pass filter were fabricated using E-beam evaporation method. The narrow band pass filter was used to enhance the resolution of spectroscopy and sensor applications with near infrared (NIR) light source. The narrow band pass filter with multilayer thin films were designed with Essential Macleod program. The multilayers of SiO₂/TiO₂ with 32 layers were deposited on the silicon encapsulation of IR with peak wavelength (λ_p) of 660 nm and NIR LEDs with λ_p of 830 nm, 880 nm, and 955 nm. After NIR light passed through the narrow band pass filter, the full width of half maximum of 33.4~48.6 nm became narrow to 20~24 nm owing to the absorption of photons with short or long wavelength of designed band of 20 nm. The SiO₂/TiO₂ band pass filter fabricated in this study can be used for sensor, optoelectronics, and NIR spectroscopy applications.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.10 no.6
• /
• pp.1196-1200
• /
• 2009

This paper proposed a tunable band pass filter. It is two-poles direct capacitive coupled resonator band pass filter which the capacitors of parallel resonators are changed by varactor diodes. The DC bias controls to change the value of capacitance in the parallel resonator for tunning the pass band. To validate the proposed design method, we fabricated the band pass filter which has tunable center frequency from 200MHz to 245MHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.18 no.7
• /
• pp.704-709
• /
• 2007

In this paper, a CPW band-pass filter with a rejection band is proposed for UWB(Ultra-Wideband) communication systems. The proposed filter has a band-pass characteristic of wide-band by inserting only a slot in $50{\Omega}$ transmission line. To obtain the band-rejection function at WLAN frequency band($5.15{\sim}5.725GHz$), the designed filter is combined with folded slot resonators on the ground plane of the CPW structure. The fabricated CPW band-pass filter shows a compact size of $15.35{\times}13.60mm$, a wide passband of 2.8 GHz to 9.8 GHz and the narrow stop-band of 5.15 GHz to 5.71 GHz for 3-dB bandwidth. Also, the measured group delay is less than 400 psec throughout the operation frequency band except the rejection band.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.5
• /
• pp.675-681
• /
• 2016

A 41dB gain control range $6^{th}$-order band-pass receiver front-end (RFE) using CMOS switched frequency translated impedance (FTI) is presented in a 40 nm CMOS technology. The RFE consists of a frequency tunable RF band-pass filter (BPF), IQ gm cells, and IQ TIAs. The RF BPF has wide gain control range preserving constant filter Q and pass band flatness due to proposed pre-distortion scheme. Also, the RF filter using CMOS switches in FTI blocks shows low clock leakage to signal nodes, and results in low common mode noise and stable operation. The baseband IQ signals are generated by combining baseband Gm cells which receives 8-phase signal outputs down-converted at last stage of FTIs in the RF BPF. The measured results of the RFE show 36.4 dB gain and 6.3 dB NF at maximum gain mode. The pass-band IIP3 and out-band IIP3@20 MHz offset are -10 dBm and +12.6 dBm at maximum gain mode, and +14 dBm and +20.5 dBm at minimum gain mode, respectively. With a 1.2 V power supply, the current consumption of the overall RFE is 40 mA at 500 MHz carrier frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.23 no.9
• /
• pp.1065-1072
• /
• 2012

In this paper, the method of design of the waveguide band-pass filter and limiter in radar system is proposed. First, we design a self-resonant iris, which can behave as a band-pass filter by mounting the PIN diode on the iris. When low power microwave is incident on the proposed element, the element behaves as a band-pass filter. Under a high power microwave condition, however, the element behaves as a limiter having wide band stop characteristics. The fabricated element has a pass band with -0.7 dB insertion loss at 10 GHz under the low power condition and isolation about 25 dB under the high power condition.