• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.675-681
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• 2016

A 41dB gain control range $6^{th}$-order band-pass receiver front-end (RFE) using CMOS switched frequency translated impedance (FTI) is presented in a 40 nm CMOS technology. The RFE consists of a frequency tunable RF band-pass filter (BPF), IQ gm cells, and IQ TIAs. The RF BPF has wide gain control range preserving constant filter Q and pass band flatness due to proposed pre-distortion scheme. Also, the RF filter using CMOS switches in FTI blocks shows low clock leakage to signal nodes, and results in low common mode noise and stable operation. The baseband IQ signals are generated by combining baseband Gm cells which receives 8-phase signal outputs down-converted at last stage of FTIs in the RF BPF. The measured results of the RFE show 36.4 dB gain and 6.3 dB NF at maximum gain mode. The pass-band IIP3 and out-band IIP3@20 MHz offset are -10 dBm and +12.6 dBm at maximum gain mode, and +14 dBm and +20.5 dBm at minimum gain mode, respectively. With a 1.2 V power supply, the current consumption of the overall RFE is 40 mA at 500 MHz carrier frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.9
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• pp.1065-1072
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• 2012

In this paper, the method of design of the waveguide band-pass filter and limiter in radar system is proposed. First, we design a self-resonant iris, which can behave as a band-pass filter by mounting the PIN diode on the iris. When low power microwave is incident on the proposed element, the element behaves as a band-pass filter. Under a high power microwave condition, however, the element behaves as a limiter having wide band stop characteristics. The fabricated element has a pass band with -0.7 dB insertion loss at 10 GHz under the low power condition and isolation about 25 dB under the high power condition.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.193-196
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• 2000

A new type low-pass filter design method based on a coupled line and transmission line theory is proposed to suppress harmonics by attenuation poles in the stop band. The design formula are derived using the equivalent circuit of a coupled transmission line. The new low-pass filter structure is shown to have attractive properties such as compact size, wide stop band range and low insertion loss. The seventh-order low-pass filter designed by present method has a cutoff frequency of 0.9 CHz with a 0.01 dB ripple level. The coupled line type low-pass filter with strip line configuration was fabricated by using a high-temperature superconducting (HTS : YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on MgO(100) substrate. Since the HTS coupled tine type low-pass filter was proposed with five attenuation poles in stop band such as 1.8, 2.5, 4, 5.5, 6.2 GHz. The fabricated low-pass filter has improved the attenuation characteristics up to seven times of the cutoff frequency.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.8
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• pp.68-73
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• 2010

In this paper, a compact Ultra-Wideband band-pass filter with notched band at 5.8GHz by using LC resonator is proposed. The structure of the proposed band-pass filter is very simple, and the DGS(Defected Ground Structure) is used to get the low-pass filter characteristics and the LC resonator is used to get the notched filter. The proposed band-pass filter can be much smaller than a cascaded filter type. The LC resonator is designed with a radial stub and small stub. As a result of measurement, the insertion loss is less than 0.5dB throughout the pass-band of 2.21GHz~10.92GHz, the return loss is more than 16dB and the maximum variation of group delay is 0.29ns and a notched band is 5.2GHz~6.2GHz.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.6
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• pp.1196-1200
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• 2009

This paper proposed a tunable band pass filter. It is two-poles direct capacitive coupled resonator band pass filter which the capacitors of parallel resonators are changed by varactor diodes. The DC bias controls to change the value of capacitance in the parallel resonator for tunning the pass band. To validate the proposed design method, we fabricated the band pass filter which has tunable center frequency from 200MHz to 245MHz.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.4
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• pp.176-179
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• 2005

The increasing demand for high density packaging technologies and the evolution to mixed digital and analogue devices has been the con-set of increasing research in thin film multi-layer technologies such as the passive components integration technology. In this paper, Cu and TaO thin film with RF sputtering was deposited for spiral inductor and MOM capacitor on the $SiO_2$/Si(100) substrate. MOM capacitor and spiral inductor were fabricated for L-C band pass filter by sputtering and lift-off. We are analyzed and designed thin films L-C passive components for band pass filter at 900 MHz and 1.8 GHz, important devices for mobile communication system. Based on the high-Q values of passive components, MOM capacitor and spiral inductors for L-C band pass filter, a low insertion loss of L-C passive components can be realized with a minimized chip area. The insertion loss was 3 dB for a 1.8 GHz filter, and 5 dB for a 900 MHz filter. This paper also discusses a analysis and practical design to thin-film L-C band pass filter.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.2
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• pp.165-171
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• 2022

The SiO₂/TiO₂ multilayer thin films used for narrow band pass filter were fabricated using E-beam evaporation method. The narrow band pass filter was used to enhance the resolution of spectroscopy and sensor applications with near infrared (NIR) light source. The narrow band pass filter with multilayer thin films were designed with Essential Macleod program. The multilayers of SiO₂/TiO₂ with 32 layers were deposited on the silicon encapsulation of IR with peak wavelength (λ_p) of 660 nm and NIR LEDs with λ_p of 830 nm, 880 nm, and 955 nm. After NIR light passed through the narrow band pass filter, the full width of half maximum of 33.4~48.6 nm became narrow to 20~24 nm owing to the absorption of photons with short or long wavelength of designed band of 20 nm. The SiO₂/TiO₂ band pass filter fabricated in this study can be used for sensor, optoelectronics, and NIR spectroscopy applications.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.8
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• pp.368-374
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• 2002

In this paper, we introduce a procedure to obtain a equivalent circuit of comb-line band pass filter. By employing equivalent circuits of each asymmetrical coupled line. we composed the full equivalent circuit of comb-line bandpass filter and derived simple design equations for extracting each line's impedance. To show the validity of design equations, we simulated and fabricated a planar type comb-line bandpass filter, which has center frequency 1.8㎓, band-width 50㎒ and four resonators. The resulting filter is very compact, have broad stop band with the second pass band centered at four times the center frequency of the first pass band. The experimental results show exact performances of design specification.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.7
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• pp.704-709
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• 2007

In this paper, a CPW band-pass filter with a rejection band is proposed for UWB(Ultra-Wideband) communication systems. The proposed filter has a band-pass characteristic of wide-band by inserting only a slot in $50{\Omega}$ transmission line. To obtain the band-rejection function at WLAN frequency band($5.15{\sim}5.725GHz$), the designed filter is combined with folded slot resonators on the ground plane of the CPW structure. The fabricated CPW band-pass filter shows a compact size of $15.35{\times}13.60mm$, a wide passband of 2.8 GHz to 9.8 GHz and the narrow stop-band of 5.15 GHz to 5.71 GHz for 3-dB bandwidth. Also, the measured group delay is less than 400 psec throughout the operation frequency band except the rejection band.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.642-645
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• 2002

This paper introduces a way to realize high-pass, band-stop and all-pass transfer functions using Operational Transconductance Amplifiers (OTAs) and grounded capacitors. The basic circuit configuration is constructed with five OTAs and two grounded capacitors. In the circuit with the proportional block, it is shown that the circuit parameters can be independently set and electronically tuned by the transconductance gains. Although the circuit configuration has been Down, it seems that the feature for realizing the high-pass, the band-pass and the all-pass transfer functions makes the structure more attractive and useful. An example is given together with simulated results by PSPICE.